Ratio type infrared thermometer
    72.
    发明授权
    Ratio type infrared thermometer 失效
    比率型红外线温度计

    公开(公告)号:US5815410A

    公开(公告)日:1998-09-29

    申请号:US643222

    申请日:1996-05-03

    IPC分类号: G01J5/22 G01J5/10

    CPC分类号: G01J5/22

    摘要: An improved ratio type infrared thermometer utilizes integrating amplifiers for each waveband having the integration time automatically set so that the output voltage utilizes the full range of an analog to digital convertor. The gain and offset of the amplifiers is not ambient temperature dependent so accurate digital representations of the signal for each waveband are provided. The linearized output of each detector is optionally provided so that special or proprietary algorithms for computing the temperature of colored objects can be utilized. A special feature for downloading of updated new programs utilizes a "programming jumper" and an attenuation warning signal is provided for selected levels of attenuation.

    摘要翻译: 改进的比率型红外温度计利用积分时间自动设置的每个波段的积分放大器,使得输出电压利用模数转换器的全范围。 放大器的增益和偏移量不是环境温度,因此提供了每个波段的信号的精确数字表示。 可选地提供每个检测器的线性化输出,使得可以利用用于计算有色物体的温度的特殊或专有算法。 用于下载更新的新程序的特殊功能使用“编程跳线”,并且为选定的衰减水平提供衰减警告信号。

    Methods and circuitry for correcting temperature-induced errors in
microbolometer focal plane array
    73.
    发明授权
    Methods and circuitry for correcting temperature-induced errors in microbolometer focal plane array 失效
    用于校正微测辐射计焦平面阵列温度导致误差的方法和电路

    公开(公告)号:US5756999A

    公开(公告)日:1998-05-26

    申请号:US799663

    申请日:1997-02-11

    摘要: Correction for temperature-induced non-uniformities in the response characteristics of the microbolometers in an infrared focal plane array (FPA) is performed by applying a non-uniform corrective bias to the individual microbolometers. The corrective bias is applied either before or during the bias or integration period during which the detectors are sampled. The bias-correction can be applied to two-dimensional detector multiplexers at each column amplifier input, the reference potential for each column amplifier or the voltage supply for each detector element. The magnitude of each corrective bias is determined by calibrating the detectors at different temperatures and different levels of incident infrared radiation. According to another aspect of this invention, a microbolometer which is thermally-shorted to the substrate on which the read out integrated circuit (ROIC) is formed is used along with the sensing microbolometer to compensate for variations in temperature. Circuitry for providing on-ROIC substrate temperature control is also described. This invention allows the operation of a microbolometer FPA over a wider range of device substrate temperatures and thereby significantly reduces the complexity and cost of the system as compared with the conventional technique of cooling the FPA.

    摘要翻译: 红外焦平面阵列(FPA)中的微量热计的响应特性中的温度诱导的不均匀性的校正是通过对各个微量热计进行不均匀的校正偏差来进行的。 纠正偏压在采样检测器的偏置或积分期间之前或期间施加。 偏置校正可以应用于每个列放大器输入处的二维检测器多路复用器,每个列放大器的参考电位或每个检测器元件的电压源。 每个校正偏差的大小通过校准不同温度和不同入射红外辐射水平的检测器来确定。 根据本发明的另一方面,与传感微电热计一起使用热短路至其上形成读出的集成电路(ROIC)的衬底的微热辐射计,以补偿温度变化。 还描述了用于提供ROIC衬底温度控制的电路。 与传统的冷却FPA技术相比,本发明允许在更宽范围的器件衬底温度下操作微热辐射计FPA,从而显着降低系统的复杂性和成本。

    Integrating capactively coupled transimpedance amplifier
    74.
    发明授权
    Integrating capactively coupled transimpedance amplifier 失效
    积分耦合跨阻放大器

    公开(公告)号:US4978872A

    公开(公告)日:1990-12-18

    申请号:US437787

    申请日:1989-11-20

    IPC分类号: G01J5/22 G06G7/186 H01L27/148

    摘要: An amplifier circuit 12 for an infrared detector 10 in a detector array formed on a large-scale integrated structure. The amplifier circuit is fabricated along with the detector on the structure and includes an amplifier stage capacitively coupled 14 to the detector 10 and an output stage. A switching FET 16 is provided to selectively couple the detector to an external biasing source and another switching FET 24 is provided to reset the amplifier stage after an integration period. In one embodiment the output stage 28 includes a storage capacitor 30 selectively coupled to the amplifier stage by a switching FET 32. In another embodiment the output encoding stage 28 includes a two-gate FET 32 to control the voltage on a storage capacitor 30. The two-gate FET controls a voltage source which periodically pulses and drains the capacitor. One FET gate is connected to the amplifier stage output and the other is connected to a clocking signal. In still another embodiment the output stage 128 includes a second capacitor 132 of smaller capacitance onto which a charge of the first capacitor 130 proportional to the output of the amplifier stage is placed for subsequent sampling.

    摘要翻译: 一种用于大规模集成结构形成的检测器阵列中的红外检测器10的放大器电路12。 放大器电路与结构上的检测器一起制造,并且包括与检测器10电容耦合14的放大器级和输出级。 提供开关FET 16以选择性地将检测器耦合到外部偏置源,并且提供另一个开关FET 24以在积分周期之后复位放大器级。 在一个实施例中,输出级28包括通过开关FET 32选择性地耦合到放大器级的存储电容器30.在另一实施例中,输出编码级28包括用于控制存储电容器30上的电压的双栅极FET 32。 双栅极FET控制周期性地对电容器进行脉冲和漏极的电压源。 一个FET门连接到放大器级输出,另一个连接到时钟信号。 在另一个实施例中,输出级128包括具有较小电容的第二电容器132,第一电容器130与放大器级的输出成比例的电荷放在其上用于随后的采样。

    Radiation detector arrangements and methods
    75.
    发明授权
    Radiation detector arrangements and methods 失效
    辐射探测器的布置和方法

    公开(公告)号:US4853538A

    公开(公告)日:1989-08-01

    申请号:US224108

    申请日:1988-07-26

    申请人: John Jackson

    发明人: John Jackson

    CPC分类号: G01J5/22 G01J2005/202

    摘要: Infrared, mm-wave or other radiation (100) is detected with at least one detector element in the form of a temperature-sensitive resistor (1) having a high positive temperature coefficient, e.g. 100 micro-ohm.multidot.cm.multidot.K.sup.-1. A sufficiently high voltage V is applied across the resistor (1) by means of a circuit (Vb,T1) so that, in accordance with the invention, the resistor (1) passes a sufficient current (I) as to raise its temperature by Joule heating to a position at which a further increase in its temperature in response to incident radiation (100) reduces the Joule heating by reducing the current (I), thereby stabilizing the temperature of the resistor (1). This varying current (I) through the resistor (1) is measured (e.g. as a voltage V' by means of a transconductance amplifier A) to provide a signal indicative of the power of the incident radiation (100). The change in the Joule heating produced by a change in the temperature of the resistor (1) at this position is larger (e.g. more than 10 times larger) than a change in power of the incident radiation (100) required to produce that same change in temperature of the resistor (1) in the absence of any change in Joule heating. As a result of this internal stabilization of its temperature due to the changes in Joule heating, the detector element (1) has a short time constant for response, and thermal cross-talk problems do not arise for an array of the detector elements (1) sharing a common body of the resistance material. The resistance material may be, e.g., a semiconducting barium titanate operated around or above ambient temperature, or an oxygen-deficient mixed oxide of barium, copper and yttrium which is superconducting when cooled below its high positive temperature coefficient. The resistor(s) may be mounted on a semiconductor circuit, possibly on a cryogenic cooler.

    Integrating capacitively coupled transimpedance amplifier
    76.
    发明授权
    Integrating capacitively coupled transimpedance amplifier 失效
    集成电容耦合跨阻放大器

    公开(公告)号:US4786831A

    公开(公告)日:1988-11-22

    申请号:US682112

    申请日:1984-12-17

    摘要: An amplifier circuit 12 for an infrared detector 10 in a detector array formed on a large-scale integrated structure. The amplifier circuit is fabricated along with the detector on the structure and includes an amplifier stage capacitively coupled 14 to the detector 10 and an output stage. A switching FET 16 is provided to selectively couple the detector to an external biasing source and another switching FET 24 is provided to reset the amplifier stage after an integration period. In one embodiment the output stage 28 includes a storage capacitor 30 selectively coupled to the amplifier stage by a switching FET 32. In another embodiment the output encoding stage 28 includes a two-gate FET 32 to control the voltage on a storage capacitor 30. The two-gate FET controls a voltage source which periodically pulses and drains the capacitor. One FET gate is connected to the amplifier stage output and the other is connected to a clocking signal. In still another embodiment the output stage 128 includes a second capacitor 132 of smaller capacitance onto which a charge of the first capacitor 130 proportional to the output of the amplifier stage is placed for subsequent sampling.

    摘要翻译: 一种用于大规模集成结构形成的检测器阵列中的红外检测器10的放大器电路12。 放大器电路与结构上的检测器一起制造,并且包括与检测器10电容耦合14的放大器级和输出级。 提供开关FET 16以选择性地将检测器耦合到外部偏置源,并且提供另一个开关FET 24以在积分周期之后复位放大器级。 在一个实施例中,输出级28包括通过开关FET 32选择性地耦合到放大器级的存储电容器30.在另一实施例中,输出编码级28包括用于控制存储电容器30上的电压的双栅极FET 32。 双栅极FET控制周期性地对电容器进行脉冲和漏极的电压源。 一个FET门连接到放大器级输出,另一个连接到时钟信号。 在另一个实施例中,输出级128包括具有较小电容的第二电容器132,第一电容器130与放大器级的输出成比例的电荷放在其上用于随后的采样。

    Bridge balancing circuit
    77.
    发明授权
    Bridge balancing circuit 失效
    桥梁平衡电路

    公开(公告)号:US3702401A

    公开(公告)日:1972-11-07

    申请号:US3702401D

    申请日:1968-11-22

    发明人: PARKIN WILLIAM J

    IPC分类号: G01J5/22 G01S3/78 H01J39/12

    CPC分类号: G01J5/22 G01S3/7803

    摘要: A bridge balancing circuit is provided, in which errors in a bridge due to relatively slow changes in its parameters or in environmental conditions are substantially eliminated. A receiving means is adapted for coupling to a bridge circuit having a signal source. The receiving means output is coupled through an integrator to an impedance which varies in accordance with the integrator output to thereby balance the bridge with respect to a reference voltage level.

    摘要翻译: 提供了一种桥接平衡电路,其中由于其参数或环境条件的相对较慢的变化导致桥梁中的误差基本上被消除。 接收装置适于耦合到具有信号源的桥式电路。 接收装置输出通过积分器耦合到根据积分器输出而变化的阻抗,从而相对于参考电压电平平衡桥。