摘要:
A radiation detector for axillary temperature measurement comprises a wand having an axially directed radiation sensor at one end and an offset handle at the opposite end. The radiation sensor is mounted within a heat sink and retained by an elastomer in compression. The radiation sensor views a target surface through an emissivity compensating cup and a plastic film. A variable reference is applied to a radiation sensor and amplifier circuit in order to maintain full analog-to-digital converter resolution over design ranges of target and sensor temperature with the sensor temperature either above or below target temperature.
摘要:
An improved ratio type infrared thermometer utilizes integrating amplifiers for each waveband having the integration time automatically set so that the output voltage utilizes the full range of an analog to digital convertor. The gain and offset of the amplifiers is not ambient temperature dependent so accurate digital representations of the signal for each waveband are provided. The linearized output of each detector is optionally provided so that special or proprietary algorithms for computing the temperature of colored objects can be utilized. A special feature for downloading of updated new programs utilizes a "programming jumper" and an attenuation warning signal is provided for selected levels of attenuation.
摘要:
Correction for temperature-induced non-uniformities in the response characteristics of the microbolometers in an infrared focal plane array (FPA) is performed by applying a non-uniform corrective bias to the individual microbolometers. The corrective bias is applied either before or during the bias or integration period during which the detectors are sampled. The bias-correction can be applied to two-dimensional detector multiplexers at each column amplifier input, the reference potential for each column amplifier or the voltage supply for each detector element. The magnitude of each corrective bias is determined by calibrating the detectors at different temperatures and different levels of incident infrared radiation. According to another aspect of this invention, a microbolometer which is thermally-shorted to the substrate on which the read out integrated circuit (ROIC) is formed is used along with the sensing microbolometer to compensate for variations in temperature. Circuitry for providing on-ROIC substrate temperature control is also described. This invention allows the operation of a microbolometer FPA over a wider range of device substrate temperatures and thereby significantly reduces the complexity and cost of the system as compared with the conventional technique of cooling the FPA.
摘要:
An amplifier circuit 12 for an infrared detector 10 in a detector array formed on a large-scale integrated structure. The amplifier circuit is fabricated along with the detector on the structure and includes an amplifier stage capacitively coupled 14 to the detector 10 and an output stage. A switching FET 16 is provided to selectively couple the detector to an external biasing source and another switching FET 24 is provided to reset the amplifier stage after an integration period. In one embodiment the output stage 28 includes a storage capacitor 30 selectively coupled to the amplifier stage by a switching FET 32. In another embodiment the output encoding stage 28 includes a two-gate FET 32 to control the voltage on a storage capacitor 30. The two-gate FET controls a voltage source which periodically pulses and drains the capacitor. One FET gate is connected to the amplifier stage output and the other is connected to a clocking signal. In still another embodiment the output stage 128 includes a second capacitor 132 of smaller capacitance onto which a charge of the first capacitor 130 proportional to the output of the amplifier stage is placed for subsequent sampling.
摘要:
Infrared, mm-wave or other radiation (100) is detected with at least one detector element in the form of a temperature-sensitive resistor (1) having a high positive temperature coefficient, e.g. 100 micro-ohm.multidot.cm.multidot.K.sup.-1. A sufficiently high voltage V is applied across the resistor (1) by means of a circuit (Vb,T1) so that, in accordance with the invention, the resistor (1) passes a sufficient current (I) as to raise its temperature by Joule heating to a position at which a further increase in its temperature in response to incident radiation (100) reduces the Joule heating by reducing the current (I), thereby stabilizing the temperature of the resistor (1). This varying current (I) through the resistor (1) is measured (e.g. as a voltage V' by means of a transconductance amplifier A) to provide a signal indicative of the power of the incident radiation (100). The change in the Joule heating produced by a change in the temperature of the resistor (1) at this position is larger (e.g. more than 10 times larger) than a change in power of the incident radiation (100) required to produce that same change in temperature of the resistor (1) in the absence of any change in Joule heating. As a result of this internal stabilization of its temperature due to the changes in Joule heating, the detector element (1) has a short time constant for response, and thermal cross-talk problems do not arise for an array of the detector elements (1) sharing a common body of the resistance material. The resistance material may be, e.g., a semiconducting barium titanate operated around or above ambient temperature, or an oxygen-deficient mixed oxide of barium, copper and yttrium which is superconducting when cooled below its high positive temperature coefficient. The resistor(s) may be mounted on a semiconductor circuit, possibly on a cryogenic cooler.
摘要:
An amplifier circuit 12 for an infrared detector 10 in a detector array formed on a large-scale integrated structure. The amplifier circuit is fabricated along with the detector on the structure and includes an amplifier stage capacitively coupled 14 to the detector 10 and an output stage. A switching FET 16 is provided to selectively couple the detector to an external biasing source and another switching FET 24 is provided to reset the amplifier stage after an integration period. In one embodiment the output stage 28 includes a storage capacitor 30 selectively coupled to the amplifier stage by a switching FET 32. In another embodiment the output encoding stage 28 includes a two-gate FET 32 to control the voltage on a storage capacitor 30. The two-gate FET controls a voltage source which periodically pulses and drains the capacitor. One FET gate is connected to the amplifier stage output and the other is connected to a clocking signal. In still another embodiment the output stage 128 includes a second capacitor 132 of smaller capacitance onto which a charge of the first capacitor 130 proportional to the output of the amplifier stage is placed for subsequent sampling.
摘要:
A bridge balancing circuit is provided, in which errors in a bridge due to relatively slow changes in its parameters or in environmental conditions are substantially eliminated. A receiving means is adapted for coupling to a bridge circuit having a signal source. The receiving means output is coupled through an integrator to an impedance which varies in accordance with the integrator output to thereby balance the bridge with respect to a reference voltage level.