公开(公告)号：US20100221494A1

公开(公告)日：2010-09-02

申请号：US12465655

申请日：2009-05-14

Applicant: Chang-Ming Lu ,  Chih-Wei Chao ,  Te-Chung Wang ,  Kuo-Lung Fang ,  Chun-Jong Chang

Inventor： Chang-Ming Lu ,  Chih-Wei Chao ,  Te-Chung Wang ,  Kuo-Lung Fang ,  Chun-Jong Chang

IPC: B32B3/00 ,  H01L21/20

CPC classification number: H01L21/02647 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02639 ,  Y10T428/24479

Abstract: A method for forming a semiconductor layer includes following steps. First, an epitaxial substrate having at least a first growth region and at least a second growth region is provided. An area ratio of C plane to R plane in the first growth region is greater than 52/48. An epitaxial process is then performed on the epitaxial substrate to form a semiconductor layer. During the epitaxial process, a semiconductor material is selectively grown on the first growth region, and then the semiconductor material is laterally overgrown on the second growth region and covers the same.

Abstract translation: 形成半导体层的方法包括以下步骤。 首先，提供具有至少第一生长区和至少第二生长区的外延衬底。 第一生长区域中C面与R面的面积比大于52/48。 然后在外延衬底上进行外延工艺以形成半导体层。 在外延工艺期间，半导体材料选择性地生长在第一生长区域上，然后半导体材料在第二生长区域上横向长满而覆盖。

公开(公告)号：USD697878S1

公开(公告)日：2014-01-21

申请号：US29455066

申请日：2013-05-16

Applicant: Lextar Elextronics Corp.

Designer： Ching-Chi Chiang ,  Kun-Hsiung Wang

公开(公告)号：USD687789S1

公开(公告)日：2013-08-13

申请号：US29430821

申请日：2012-08-30

Applicant: Xin-Lin Zhou

Designer： Xin-Lin Zhou

公开(公告)号：US20130200814A1

公开(公告)日：2013-08-08

申请号：US13561699

申请日：2012-07-30

Applicant: CHUN-KUANG CHEN ,  MENG CHAI WU ,  PO-SHEN CHEN ,  FENG-LING LIN ,  HUI YING CHEN

Inventor： CHUN-KUANG CHEN ,  MENG CHAI WU ,  PO-SHEN CHEN ,  FENG-LING LIN ,  HUI YING CHEN

IPC: H05B37/02

CPC classification number: H05B33/0863

Abstract: An LED lighting apparatus and a dimming method thereof are disclosed. The LED lighting apparatus is coupled to a power source through a power switch. The method includes providing a first lighting unit and a second lighting unit; detecting whether or not the power switch has been turned on; and gradually adjusting a light mixing ratio between the first lighting unit and the second lighting unit according to a turn-on duration of the power switch and storing a color temperature value, accordingly.

Abstract translation: 公开了一种LED照明装置及其调光方法。 LED照明装置通过电源开关与电源耦合。 该方法包括提供第一照明单元和第二照明单元; 检测电源开关是否已经接通; 并且根据电源开关的接通持续时间逐渐调节第一照明单元和第二照明单元之间的光混合比，并且相应地存储色温值。

公开(公告)号：US20130175670A1

公开(公告)日：2013-07-11

申请号：US13543742

申请日：2012-07-06

Applicant: FU-SIN CHEN

Inventor： FU-SIN CHEN

IPC: H01L29/866 ,  H01L21/329

CPC classification number: H01L29/866 ,  H01L23/3171 ,  H01L29/66106 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exemplary embodiment illustrates a zener diode structure, wherein the zener diode structure includes a first-type semiconductor layer, a second-type semiconductor layer, a first electrode, a second electrode, and an insulation layer. The second-type semiconductor layer is disposed in a designated area in the first-type semiconductor layer. The first electrode is disposed on the bottom side of the first-type semiconductor layer. The second electrode is disposed above the first-type and the second-type semiconductor layers in corresponding to the central area of the second-type semiconductor layer. The insulation layer is disposed above the first-type and the second-type semiconductor layers surrounding the second electrode. The disclosed zener structure having the insulation layer can reduce the short circuit issue resulting from overflow of an adhesive material during the zener diode packaging process.

Abstract translation: 示例性实施例示出了齐纳二极管结构，其中齐纳二极管结构包括第一类型半导体层，第二类型半导体层，第一电极，第二电极和绝缘层。 第二类型半导体层设置在第一类型半导体层中的指定区域中。 第一电极设置在第一型半导体层的底侧。 第二电极设置在与第二类型半导体层的中心区域对应的第一类型和第二类型的半导体层的上方。 绝缘层设置在围绕第二电极的第一类型和第二类型半导体层之上。 所公开的具有绝缘层的齐纳结构可以减少在齐纳二极管封装过程期间由于粘合剂材料溢出而导致的短路问题。

公开(公告)号：US20130168705A1

公开(公告)日：2013-07-04

申请号：US13539571

申请日：2012-07-02

Applicant: SHENG PEI LIN

Inventor： SHENG PEI LIN

IPC: H01L33/62

CPC classification number: H01L24/97 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/52 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A solid-state light-emitting package includes a leadframe, a light-emitting chip, and a sealant. The leadframe includes a first electrode and a second electrode. The first electrode has at least one first contact end, and the second electrode has at least one second contact end. The light-emitting chip is electrically connected to the first electrode and the second electrode and is disposed between the first contact end and the second contact end. The sealant covers the leadframe and the light-emitting chip and has a first surface and a second surface. The first surface is the light output surface for the light-emitting chip. The first electrode and the second electrode are bent toward the first surface, where the first contact end and the second contact end are exposed by the first surface.

Abstract translation: 固态发光封装包括引线框，发光芯片和密封剂。 引线框架包括第一电极和第二电极。 第一电极具有至少一个第一接触端，并且第二电极具有至少一个第二接触端。 发光芯片电连接到第一电极和第二电极，并且设置在第一接触端和第二接触端之间。 密封剂覆盖引线框架和发光芯片，并且具有第一表面和第二表面。 第一表面是用于发光芯片的光输出表面。 第一电极和第二电极朝向第一表面弯曲，其中第一接触端和第二接触端被第一表面暴露。

公开(公告)号：US08471285B2

公开(公告)日：2013-06-25

申请号：US13154306

申请日：2011-06-06

Applicant: Chin-Chang Hsu ,  Wen-Lung Su

Inventor： Chin-Chang Hsu ,  Wen-Lung Su

IPC: H01L33/00 ,  H01L23/495

CPC classification number: H01L33/60 ,  H01L25/167 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/85385 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/3025 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An LED package including a lead-frame, at least an LED chip and an encapsulant is provided. The lead-frame has a roughened surface, the LED chip is disposed on the lead-frame and electrically connected to the lead-frame, and the roughened surface is suitable to scatter the light emitted from the LED chip. In addition, the encapsulant encapsulates the LED chip and a part of the lead-frame, and the rest part of the lead-frame is exposed out of the encapsulant.

Abstract translation: 提供了包括引线框架，至少LED芯片和密封剂的LED封装。 引线框架具有粗糙表面，LED芯片设置在引线框架上并电连接到引线框架，并且粗糙表面适于散射从LED芯片发出的光。 此外，密封剂封装LED芯片和引线框架的一部分，引线框架的其余部分从密封剂中露出。

公开(公告)号：USD678226S1

公开(公告)日：2013-03-19

申请号：US29410509

申请日：2012-01-09

Applicant: Hui-Kai Hsu ,  Che-Ming Hsu

Designer： Hui-Kai Hsu ,  Che-Ming Hsu

公开(公告)号：US20130029476A1

公开(公告)日：2013-01-31

申请号：US13540781

申请日：2012-07-03

Applicant: Chien-Sen WENG ,  Mong-Yeng Xing ,  Yu-Ching Chang ,  Wei-Chang Yu ,  Yao-Hui Lin

Inventor： Chien-Sen WENG ,  Mong-Yeng Xing ,  Yu-Ching Chang ,  Wei-Chang Yu ,  Yao-Hui Lin

IPC: H01L21/78

CPC classification number: B28D5/0011 ,  B28D5/0052 ,  Y02P80/30

Abstract: A dicing process is provided for cutting a wafer along a plurality of predetermined scribe lines into a plurality of dies that are releasably adhered to a release film. The dicing process includes: (a) disposing a wafer-breaking carrier on a supporting device, the wafer-breaking carrier having a chipping unit; (b) disposing the wafer above the supporting device such that the chipping unit is at a position corresponding to the scribe lines; and (c) adhering a release surface of the release film to the wafer by applying a force to the release film to contact the chipping unit of the wafer-breaking carrier with the wafer, such that the wafer is split along the scribe lines into the dies.

Abstract translation: 提供了一种切割工艺，用于沿着多条预定划线将晶片切割成可剥离地粘附到脱模膜上的多个模具。 切割工艺包括：（a）在支撑装置上设置晶片破坏载体，晶片断开载体具有切屑单元; （b）将所述晶片设置在所述支撑装置上方，使得所述切屑单元处于与所述划线对应的位置; 并且（c）通过向剥离膜施加力使脱模膜的释放表面附着到晶片上，以将晶片破坏载体的切屑单元与晶片接触，使得晶片沿着划线分裂成 死了

公开(公告)号：USD675170S1

公开(公告)日：2013-01-29

申请号：US29408562

申请日：2011-12-14

Applicant: Bo-Yu Ko

Designer： Bo-Yu Ko