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108 条记录 (耗时 0.025 秒)

    SPIN MOSFET
    82.
    发明申请
    SPIN MOSFET 有权

    公开(公告)号：US20080061332A1

    公开(公告)日：2008-03-13

    申请号：US11771295

    申请日：2007-06-29

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： H01L29/94

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3272

    摘要： A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first ferromagnetic layer being pinned; a second magnetic film formed on the semiconductor substrate to separate from the first magnetic film and including a magnetization free layer, a first nonmagnetic layer being a tunnel insulator and provided on the magnetization free layer, and a magnetization pinned layer provided on the first nonmagnetic layer, a magnetization direction of the magnetization free layer being changeable and a magnetization direction of the magnetization pinned layer being fixed; a gate insulating film provided at least on the semiconductor substrate between the first magnetic film and the second magnetic film; and a gate electrode formed on the gate insulating film.

    摘要翻译： 自旋MOSFET包括：半导体衬底; 形成在所述半导体衬底上并包括第一铁磁层的第一磁性膜，所述第一铁磁层的磁化方向被钉扎; 形成在所述半导体基板上以与所述第一磁性膜分离并且包括无磁化层的第二磁性膜，作为隧道绝缘体的第一非磁性层并且设置在所述磁化自由层上，以及设置在所述第一非磁性层上的磁化固定层 磁化自由层的磁化方向是可变的，并且磁化固定层的磁化方向是固定的; 在所述第一磁性膜和所述第二磁性膜之间至少设置在所述半导体基板上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。

    Magnetoresistive effect element and magnetic memory
    83.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US07266012B2

    公开(公告)日：2007-09-04

    申请号：US11373305

    申请日：2006-03-13

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  H01L27/228 ,  H01L43/08

    摘要： It is made possible to provide a highly reliable magnetoresistive effect element and magnetic memory that operate with low power consumption and low current writing. The magnetoresistive effect element includes: a magnetization free layer including at least two magnetic layers subject to antiferromagnetic coupling and a non-magnetic layer provided between the magnetic layers; a tunnel barrier layer provided on one surface of the magnetization free layer; a first magnetization pinned layer provided on an opposite surface of the tunnel barrier layer from the magnetization free layer; a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer. The first and second magnetization pinned layers are substantially the same in magnetization direction. The non-magnetic metal layer includes Cu, Ag, Au, or an alloy of them. The non-magnetic layer in the magnetization free layer includes Ru, Rh, Ir or an alloy of them.

    摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和低电流写入操作。 磁阻效应元件包括：包含至少两个受到反铁磁耦合的磁性层的磁化自由层和设置在磁性层之间的非磁性层; 设置在所述磁化自由层的一个表面上的隧道势垒层; 第一磁化固定层，设置在所述隧道势垒层与所述磁化自由层的相对表面上; 设置在所述磁化自由层的与所述隧道势垒层相反的表面上的非磁性金属层; 以及设置在所述非磁性金属层与所述无磁化层的相对表面上的第二磁化固定层。 第一和第二磁化固定层在磁化方向上基本相同。 非磁性金属层包括Cu，Ag，Au或它们的合金。 磁化自由层中的非磁性层包括Ru，Rh，Ir或它们的合金。

    Spin-injection magnetic random access memory
    84.
    发明授权
    Spin-injection magnetic random access memory 有权
    旋转注入磁性随机存取存储器

    公开(公告)号：US07239541B2

    公开(公告)日：2007-07-03

    申请号：US11242906

    申请日：2005-10-05

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Yoshihisa Iwata

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Yoshihisa Iwata

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/16 ,  H01L43/08

    摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.

    摘要翻译： 根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道 设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线， 辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

    Magneto-resistance effect element and magnetic memory
    86.
    发明申请
    Magneto-resistance effect element and magnetic memory 失效
    磁阻效应元件和磁存储器

    公开(公告)号：US20050195532A1

    公开(公告)日：2005-09-08

    申请号：US11068252

    申请日：2005-03-01

    申请人： Hideyuki Sugiyama ,  Yoshiaki Saito

    发明人： Hideyuki Sugiyama ,  Yoshiaki Saito

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11C11/161

    摘要： An area of an element can be made small and fluctuation in area can be reduced. A magneto-resistance effect element is provided with a first electrode with an end face; a magneto-resistance effect film which is formed such that a surface thereof comes in contact with the end face of the first electrode; and a second electrode which is formed on another surface of the magneto-resistance effect element opposed from the surface coming in contact with the surface of the first electrode. The magneto-resistance effect film includes a magnetization pinned layer whose magnetization direction is pinned, a magnetization free layer whose magnetization direction is changeable, and a first non-magnetic layer which is provided between the magnetization pinned layer and the magnetization free layer.

    摘要翻译： 可以使元件的区域变小，并且可以减小面积的波动。 磁阻效应元件设置有具有端面的第一电极; 形成为使得其表面与第一电极的端面接触的磁阻效应膜; 以及第二电极，其形成在与从第一电极的表面接触的表面相对的磁阻效应元件的另一个表面上。 磁阻效应膜包括其磁化方向被钉扎的磁化钉扎层，其磁化方向可变的磁化自由层，以及设置在磁化钉扎层与磁化自由层之间的第一非磁性层。

    Magneto-resistive effect element and magnetic memory
    87.
    发明申请
    Magneto-resistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号：US20050057960A1

    公开(公告)日：2005-03-17

    申请号：US10901325

    申请日：2004-07-29

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama

    IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

    CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/228

    摘要： It is possible to perform a writing operation with low power consumption and a low current, and enhance reliability without causing element breakdown. There are provided a first magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a second magnetization-pinned layer including at least one magnetic film in which a magnetization direction is pinned; a magnetic recording layer formed between the first magnetization-pinned layer and the second magnetization-pinned layer and including at least one magnetic film in which a magnetization direction is changeable by injecting spin-polarized electrons; a tunnel barrier layer formed between the first magnetization-pinned layer and the magnetic recording layer; and a nonmagnetic intermediate layer formed between the magnetic recording layer and the second magnetization-pinned layer. The magnetization direction of the magnetic film of the first magnetization-pinned layer on the magnetic recording layer side is substantially anti-parallel to the magnetization direction of the magnetic film of the second magnetization-pinned layer on the magnetic recording layer side.

    摘要翻译： 可以执行低功耗和低电流的写入操作，并且可以在不引起元件故障的情况下提高可靠性。 提供了包括磁化方向被固定的至少一个磁性膜的第一磁化固定层; 第二磁化固定层，其包括其中磁化方向被钉扎的至少一个磁性膜; 形成在第一磁化固定层和第二磁化固定层之间的磁记录层，并且包括通过注入自旋极化电子而使磁化方向可变化的至少一个磁性膜; 形成在第一磁化固定层和磁记录层之间的隧道势垒层; 以及形成在磁记录层和第二磁化固定层之间的非磁性中间层。 磁记录层侧的第一磁化固定层的磁性膜的磁化方向基本上与磁记录层侧的第二磁化固定层的磁性膜的磁化方向反平行。

    Spin MOSFET and reconfigurable logic circuit
    89.
    发明授权
    Spin MOSFET and reconfigurable logic circuit 有权
    旋转MOSFET和可重构逻辑电路

    公开(公告)号：US08637946B2

    公开(公告)日：2014-01-28

    申请号：US13228852

    申请日：2011-09-09

    申请人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa

    发明人： Yoshiaki Saito ,  Hideyuki Sugiyama ,  Tomoaki Inokuchi ,  Takao Marukame ,  Mizue Ishikawa

    IPC分类号： H01L29/82

    CPC分类号： H01L43/02 ,  B01D53/1493 ,  B01D53/62 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L28/00 ,  H01L29/0843 ,  H01L29/0895 ,  H01L29/66984 ,  H01L43/10

    摘要： A spin MOSFET includes: a first ferromagnetic layer provided on a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower and upper faces; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on the second ferromagnetic layer; a third ferromagnetic layer provided on the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween.

    摘要翻译： 自旋MOSFET包括：设置在半导体衬底上并具有与膜平面垂直的固定磁化方向的第一铁磁层; 设置在所述第一铁磁层上的半导体层，包括与所述第一铁磁层的上表面相对的下表面，与所述下表面相对的上表面，以及与所述下表面和所述上表面不同的侧面; 第二铁磁层，设置在所述半导体层的上表面上，并且具有与膜平面垂直的可变磁化方向; 设置在第二铁磁层上的第一隧道势垒; 设置在第一隧道屏障上的第三铁磁层; 设置在所述半导体层的侧面上的栅极绝缘膜; 以及设置在半导体层的侧面上的栅电极，其间插入有栅极绝缘膜。

    Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array
    90.
    发明授权
    Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array 有权
    使用自旋MOSFET的存储电路，具有存储功能的路径晶体管电路，开关盒电路，开关块电路和现场可编程门阵列

    公开(公告)号：US08611143B2

    公开(公告)日：2013-12-17

    申请号：US13403308

    申请日：2012-02-23

    申请人： Hideyuki Sugiyama ,  Masato Oda ,  Shinobu Fujita ,  Tetsufumi Tanamoto ,  Mizue Ishikawa ,  Takao Marukame ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    发明人： Hideyuki Sugiyama ,  Masato Oda ,  Shinobu Fujita ,  Tetsufumi Tanamoto ,  Mizue Ishikawa ,  Takao Marukame ,  Tomoaki Inokuchi ,  Yoshiaki Saito

    IPC分类号： G11C11/00

    CPC分类号： G11C5/148 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    摘要： A memory circuit according to an embodiment includes: a first transistor including a first source/drain electrode, a second source/drain electrode, and a first gate electrode; a second transistor including a third source/drain electrode connected to the second source/drain electrode, a fourth source/drain electrode, and a second gate electrode; a third transistor and a fourth transistor forming an inverter circuit, the third transistor including a fifth source/drain electrode, a sixth source/drain electrode, and a third gate electrode connected to the second source/drain electrode, the fourth transistor including a seventh source/drain electrode connected to the sixth source/drain electrode, an eighth source/drain electrode, and a fourth gate electrode connected to the second source/drain electrode; and an output terminal connected to the sixth source/drain electrode. At least one of the third transistor and the fourth transistor is a spin MOSFET, and an output of the inverter circuit is sent from the output terminal.

    摘要翻译： 根据实施例的存储器电路包括：第一晶体管，包括第一源极/漏极，第二源极/漏极和第一栅电极; 第二晶体管，包括连接到第二源极/漏极的第三源极/漏极，第四源极/漏极和第二栅极; 第三晶体管和形成逆变器电路的第四晶体管，所述第三晶体管包括第五源极/漏极，第六源极/漏极和连接到所述第二源极/漏极的第三栅电极，所述第四晶体管包括第七 连接到第六源极/漏极的源极/漏极电极，连接到第二源极/漏极的第八源极/漏极电极和第四栅极电极; 以及连接到第六源极/漏极的输出端子。 第三晶体管和第四晶体管中的至少一个是自旋MOSFET，并且从输出端子发送反相器电路的输出。