摘要:
A push button switch including a case, a key top fastened to the case, an elastic member disposed between the case and the key top and acting to upwards urge the key top and a contact portioned so as to confront a spring member fastened to an operation member of the key top so that the contact portion is pressed by the spring member when the key top is depressed, the push button switch comprising: a movable member disposed between the operation member of the key top and a projection wall of the case whereby the operation member and the movable member can be moved with respect to each other and the movable member and the projection wall can be moved with respect to each other.
摘要:
A push button switch including a case, a key top fastened to the case, an elastic member disposed between the case and the key top and acting to upwards urge the key top and a contact portioned so as to confront a spring member fastened to an operation member of the key top so that the contact portion is pressed by the spring member when the key top is depressed, the push button switch comprising: a movable member disposed between the operation member of the key top and a projection wall of the case whereby the operation member and the movable member can be moved with respect to each other and the movable member and the projection wall can be moved with respect to each other.
摘要:
A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7).
摘要:
A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: wherein Z represents nitrogen atom, C—F or the like; R1 represents a C1-C3 alkyl group; Y represents oxygen atom or N—R7; R2, R3, R4, R5, R6 and R7 each independently represents hydrogen atom, a C1-C6 alkyl group, or a group represented by the formula (II): which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).
摘要:
A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: wherein Z represents nitrogen atom or C—X; X represents hydrogen atom or fluorine atom; R1 is hydrogen atom or a C1-C3 alkyl group; L represents single bond or a C1-C6 alkylene group which may be substituted; Y represents single bond, sulfur atom, oxygen atom, NH, or the like; R2 represents hydrogen atom or a cyclic group which may be substituted, which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).
摘要:
A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: wherein each R1 represents hydrogen atom or the like; X represents oxygen atom or the like; A represents a C3-C7 cycloalkyl group, a C6-C10 aryl group or a heterocyclic group; R6 represents a halogen atom or the like; s represents 0 or an integer of 1 to 5; Q represents a pyridine ring which may be substituted or pyrimidine ring; and R2 represents hydrogen atom or the like, which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).
摘要:
To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4≦x≦0.7 and 0.7≦y≦0.94.
摘要翻译:本发明提供一种压电薄膜元件,其特征在于,具有:基板上具有由组成式(K1-xNax)yNbO3表示的碱铌氧化物系钙钛矿结构的压电薄膜,其中,压电薄膜的组成比x,y 由(K1-xNax)yNbO3表示,在0.4 @ x @ 0.7和0.7 @ y @ 0.94的范围内。
摘要:
To provide a piezoelectric film element, including: a substrate; and a piezoelectric film having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 (0
摘要:
A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K1-xNax)NbO3 on a substrate, and dry-etching the piezoelectric film by using a low-pressure plasma including a fluorine system reactive gas.
摘要:
There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.