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    Semiconductor device with semi-insulating substrate portions
    81.
    发明申请
    Semiconductor device with semi-insulating substrate portions 有权
    具有半绝缘衬底部分的半导体器件

    公开(公告)号：US20100013020A1

    公开(公告)日：2010-01-21

    申请号：US12586688

    申请日：2009-09-24

    Applicant: Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  H. C. Cheng

    Inventor： Wen-Chin Lin ,  Denny Tang ,  Chuan-Ying Lee ,  H. C. Cheng

    IPC: H01L27/06 ,  H01L29/06

    CPC classification number: H01L21/76 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/823481 ,  H01L21/823878 ,  H01L27/08

    Abstract: A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.

    Abstract translation: 半导体衬底包括在半导体子结构上形成的图案化硬掩模膜的开口下方的半绝缘部分，其厚度足以防止带电粒子通过硬掩模。 半绝缘部分包括带电粒子并且可以深深地延伸到半导体衬底中并且电绝缘形成在半绝缘部分的相对侧上的器件。 带电粒子可以有利地是质子，并且由图案化的硬掩模膜覆盖的另外的基底部分基本上没有带电粒子。

    SOLAR PANEL CURTAIN
    82.
    发明申请
    SOLAR PANEL CURTAIN 审中-公开
    太阳能面板

    公开(公告)号：US20090145473A1

    公开(公告)日：2009-06-11

    申请号：US12328774

    申请日：2008-12-05

    Applicant: Wen-Hsiang Chien ,  Hsiu-Tung Lin ,  Wen-Chin Lin

    Inventor： Wen-Hsiang Chien ,  Hsiu-Tung Lin ,  Wen-Chin Lin

    IPC: H01L31/042

    CPC classification number: H01L31/04 ,  E06B9/386 ,  E06B2009/2476 ,  Y02E10/50

    Abstract: A solar panel curtain including a plurality of sunshield panels disposed in parallel, an electric energy storage device electrically connected to the sunshield panels, an orientation device connected to the sunshield panels and electrically connected to the electric energy storage device, and a switch device is provided. Each sunshield panel includes plural solar panels locked to each other. The electric energy storage device receives and stores the electric energy generated by the sunshield panels. The orientation device orients the sunshield panels, wherein power is supplied to the orientation device by the electric energy storage device or an external power source. The switch device is electrically connected to the orientation device for turning on or off the orientation device. The solar panel curtain may further include a photo detector device and a knob device such that the sunshield panels can be either automatically oriented or manually operated through the knob device.

    Abstract translation: 包括并排设置的多个遮光板的太阳能电池板幕帘，与遮阳板相连接的电能存储装置，连接到遮阳板并与电能存储装置电连接的取向装置和开关装置 。 每个遮阳板包括彼此锁定的多个太阳能电池板。 电能存储装置接收并存储遮阳板产生的电能。 定向装置定向遮阳板，其中通过电能存储装置或外部电源向定向装置供电。 开关装置电连接到定向装置，用于打开或关闭取向装置。 太阳能面板帘幕还可以包括光电检测器装置和旋钮装置，使得遮阳板面板可以通过旋钮装置自动定向或手动操作。

    MRAM arrays and methods for writing and reading magnetic memory devices
    84.
    发明授权
    MRAM arrays and methods for writing and reading magnetic memory devices 有权
    MRAM阵列和写入和读取磁存储器件的方法

    公开(公告)号：US07436698B2

    公开(公告)日：2008-10-14

    申请号：US11610739

    申请日：2006-12-14

    Applicant: Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Jordan Lai

    Inventor： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fan-Shi Jordan Lai

    IPC: G11C11/00

    CPC classification number: G11C11/1673

    Abstract: A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

    Abstract translation: 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

    Diazo dyestuff compounds and their use
    87.
    发明申请
    Diazo dyestuff compounds and their use 失效
    重氮染料及其用途

    公开(公告)号：US20070050926A1

    公开(公告)日：2007-03-08

    申请号：US11452911

    申请日：2006-06-15

    Applicant: Jen-Fang Lin ,  Tzu-Kwei Sun ,  Hsiao-San Chen ,  Wen-Chin Lin

    Inventor： Jen-Fang Lin ,  Tzu-Kwei Sun ,  Hsiao-San Chen ,  Wen-Chin Lin

    IPC: C09B67/00

    CPC classification number: C09B33/10 ,  C09B67/0046

    Abstract: The present invention relates to a diazo dyestuff compound of the following formula (I) wherein, M is H, Na, or Li. The formula (I) compound is particularly suitable for using as a component in a black dye composition for ink-jet printing ink, and inkjet printing inks with good light-fastness are obtained.

    Abstract translation: 本发明涉及下式（I）的重氮染料化合物，其中M为H，Na或Li。 式（I）化合物特别适合用作喷墨印刷油墨的黑色染料组合物中的组分，并且获得具有良好耐光性的喷墨印刷油墨。

    Magnetoresistive Structures and Fabrication Methods
    89.
    发明申请
    Magnetoresistive Structures and Fabrication Methods 有权
    磁阻结构及制作方法

    公开(公告)号：US20060238925A1

    公开(公告)日：2006-10-26

    申请号：US10907974

    申请日：2005-04-22

    Applicant: Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    Inventor： Yu-Jen Wang ,  Chih-Huang Lai ,  Wen-Chin Lin ,  Denny Tang ,  Chao-Hsiung Wang

    IPC: G11B5/33 ,  G11B5/127

    CPC classification number: G11B5/3929 ,  B82Y10/00 ,  G11B2005/3996

    Abstract: Disclosed herein is a magnetoresistive structure, for example useful as a spin-valve or GMR stack in a magnetic sensor, and a fabrication method thereof. The magnetoresistive structure uses twisted coupling to induce a perpendicular magnetization alignment between the free layer and the pinned layer. Ferromagnetic layers of the free and pinned layers are exchange-coupled using antiferromagnetic layers having substantially parallel exchange-biasing directions. Thus, embodiments can be realized that have antiferromagnetic layers formed of a same material and/or having a same blocking temperature. At least one of the free and pinned layers further includes a second ferromagnetic layer and an insulating layer, such as a NOL, between the two ferromagnetic layers. The insulating layer causes twisted coupling between the two ferromagnetic layers, rotating the magnetization direction of one 90 degrees relative to the magnetization direction of the other.

    Abstract translation: 这里公开了一种例如在磁传感器中用作自旋阀或GMR堆叠的磁阻结构及其制造方法。 磁阻结构使用扭转耦合来引起自由层和被钉扎层之间的垂直磁化对准。 使用具有基本平行的交换偏压方向的反铁磁层来交换耦合自由和被钉扎层的铁磁层。 因此，可以实现具有由相同材料形成的反铁磁层和/或具有相同阻挡温度的实施例。 自由和被钉扎层中的至少一个还包括在两个铁磁层之间的第二铁磁层和绝缘层，例如NOL。 绝缘层引起两个铁磁层之间的扭转耦合，使相对于另一个的磁化方向旋转90度的磁化方向。

    MRAM arrays and methods for writing and reading magnetic memory devices
    90.
    发明申请
    MRAM arrays and methods for writing and reading magnetic memory devices 有权
    MRAM阵列和写入和读取磁存储器件的方法

    公开(公告)号：US20050243598A1

    公开(公告)日：2005-11-03

    申请号：US11115422

    申请日：2005-04-27

    Applicant: Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fang-Shi Lai

    Inventor： Wen-Chin Lin ,  Denny Tang ,  Li-Shyue Lai ,  Chao-Hsiung Wang ,  Fang-Shi Lai

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: G11C11/1673

    Abstract: A non-destructive technique and related array for writing and reading magnetic memory cells, including sampling a first signal of a selected read line corresponding to select memory cells, applying a magnetic field to the select memory cells, sampling a second signal of the selected read line, and comparing the first and second signals to determine a logic state of the select memory cells.

    Abstract translation: 一种用于写入和读取磁存储单元的非破坏性技术和相关阵列，包括对与选择存储器单元相对应的所选读取行的第一信号进行采样，向选择存储单元施加磁场，对所选择的读取的第二信号 并且比较第一和第二信号以确定选择存储器单元的逻辑状态。

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