公开(公告)号：US07505832B2

公开(公告)日：2009-03-17

申请号：US10802363

申请日：2004-03-16

申请人： Dongchoon Suh ,  Akihiro Hosokawa ,  Hung The Nguyen

发明人： Dongchoon Suh ,  Akihiro Hosokawa ,  Hung The Nguyen

IPC分类号： G05B15/00 ,  G05B19/00

CPC分类号： H01L21/67259 ,  H01L21/67248 ,  H01L21/67745

摘要： Embodiments of a method and apparatus for determining a substrate exchange position in a processing system are provided. In one embodiment, a method of determining a substrate exchange position in a processing system includes determining an initial exchange position within a processing chamber, and resolving a change in the exchange position. The step of resolving may further include the step of sensing a change in temperature of a facet of a transfer chamber having the processing chamber coupled thereto, sensing a change in a state of the system, or sensing a change in position of the processing chamber, among others.

摘要翻译： 提供了一种用于确定处理系统中的基板交换位置的方法和装置的实施例。 在一个实施例中，确定处理系统中的基板交换位置的方法包括确定处理室内的初始交换位置，以及解决交换位置的变化。 分辨步骤可进一步包括检测具有与其耦合的处理室的传送室的面的温度变化的步骤，感测系统的状态的变化或感测处理室的位置的改变， 等等

公开(公告)号：US07432184B2

公开(公告)日：2008-10-07

申请号：US11213662

申请日：2005-08-26

申请人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Huu Le ,  John M. White

发明人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Huu Le ,  John M. White

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L21/67201 ,  C23C14/566 ,  C23C14/568 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67196 ,  H01L29/66765

摘要： A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.

摘要翻译： 提供了一种制造包含一个或多个含金属层的膜堆叠的方法和用于在基板上形成膜堆叠的基板处理系统。 衬底处理系统包括耦合到至少一个负载锁定室的至少一个传送室，被配置成将第一材料层沉积在衬底上的至少一个第一物理气相沉积（PVD）室和至少一个第二PVD室 在相同的基板处理系统内在第一材料层上沉积第二材料层而不破坏真空或将基板从基板处理系统取出以防止表面污染，氧化等。基板处理系统被配置为提供 高产量和紧凑的占地面积，用于在指定的PVD室中不同材料层的原位溅射。

公开(公告)号：US20080067058A1

公开(公告)日：2008-03-20

申请号：US11852136

申请日：2007-09-07

申请人： BRADLEY O. STIMSON ,  Akihiro Hosokawa ,  Makoto Inagawa

发明人： BRADLEY O. STIMSON ,  Akihiro Hosokawa ,  Makoto Inagawa

IPC分类号： C23C14/14 ,  C23C14/34

CPC分类号： C23C14/3407 ,  H01J37/3435

摘要： The present invention generally comprises a monolithic sputtering target assembly for depositing material onto large area substrates. The sputtering target assembly may comprise both the sputtering target and the backing plate in one monolithic structure. By having the backing plate and sputtering target as a monolithic structure, bonding is not necessary. Additionally, cooling channels may be drilled into the monolithic structure so that cooling fluid may flow within the sputtering target assembly without the need for a separate cooling assembly resting on back of the sputtering target assembly.

摘要翻译： 本发明通常包括用于将材料沉积到大面积基板上的单片溅射靶组件。 溅射靶组件可以包括一个整体结构的溅射靶和背板两者。 通过将背板和溅射靶作为整体结构，不需要结合。 此外，可以将冷却通道钻入单片结构中，使得冷却流体可以在溅射靶组件内流动，而不需要在溅射靶组件的背面上放置单独的冷却组件。

公开(公告)号：US20070295596A1

公开(公告)日：2007-12-27

申请号：US11426271

申请日：2006-06-23

申请人： Makoto INAGAWA ,  Bradley O. Stimson ,  Akihiro Hosokawa ,  Hienminh Huu Le ,  Jrjyan Jerry Chen

发明人： Makoto INAGAWA ,  Bradley O. Stimson ,  Akihiro Hosokawa ,  Hienminh Huu Le ,  Jrjyan Jerry Chen

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/3407 ,  C23C14/352 ,  C23C14/564 ,  H01J37/3435

摘要： A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

摘要翻译： 物理气相沉积靶组件被配置为将目标结合层与处理区域隔离。 在一个实施例中，目标组件包括背板，具有第一表面和第二表面的靶，以及设置在背板和第二表面之间的结合层。 目标的第一表面与处理区域流体接触，并且目标物的第二表面朝向背板取向。 目标组件可以包括多个目标。

公开(公告)号：US20070056845A1

公开(公告)日：2007-03-15

申请号：US11399122

申请日：2006-04-06

申请人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hien Le ,  Elpidio Nisperos ,  Bradley Stimson

发明人： Yan Ye ,  John White ,  Akihiro Hosokawa ,  Hien Le ,  Elpidio Nisperos ,  Bradley Stimson

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/3407 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3438 ,  H01J37/3441

摘要： The present invention generally provides a sputtering apparatus and method in which a sputtering target has a plurality of target sections bonded to a common backing plate. Each segment can be bonded to the common backing plate using a different bonding material. One target segment can be bonded to the backing plate using electrically conductive bonding material while another section is bonded to the backing plate using electrically insulating bonding material. Additionally, each different target section can be separately biased.

摘要翻译： 本发明通常提供一种溅射装置和方法，其中溅射靶具有多个目标部分结合到共同的背板上。 可以使用不同的接合材料将每个段结合到公共背板上。 可以使用导电接合材料将一个目标段结合到背板上，而使用电绝缘接合材料将另一部分结合到背板上。 此外，每个不同的目标部分可以单独偏置。

公开(公告)号：US20070051617A1

公开(公告)日：2007-03-08

申请号：US11301849

申请日：2005-12-12

申请人： John White ,  Hien-Minh Le ,  Akihiro Hosokawa

发明人： John White ,  Hien-Minh Le ,  Akihiro Hosokawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

摘要翻译： 本发明总体上提供了一种用于处理PVD室中的基板的表面的装置和方法，该PVD腔具有可以变形形状的磁控管组件，以调节沉积室的处理区域中的磁场强度，以提高沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个磁控管区域和磁控管致动器，其用于在处理期间增加并均匀地分布整个处理室的处理区域的磁场强度。

公开(公告)号：US20070048992A1

公开(公告)日：2007-03-01

申请号：US11213662

申请日：2005-08-26

申请人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Le ,  John White

发明人： Akihiro Hosokawa ,  Makoto Inagawa ,  Hienminh Le ,  John White

IPC分类号： H01L21/44

CPC分类号： H01L21/67201 ,  C23C14/566 ,  C23C14/568 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67196 ,  H01L29/66765

摘要： A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.

摘要翻译： 提供了一种制造包含一个或多个含金属层的膜堆叠的方法和用于在基板上形成膜堆叠的基板处理系统。 衬底处理系统包括耦合到至少一个负载锁定室的至少一个传送室，被配置成将第一材料层沉积在衬底上的至少一个第一物理气相沉积（PVD）室和至少一个第二PVD室 在相同的基板处理系统内在第一材料层上沉积第二材料层而不破坏真空或将基板从基板处理系统取出以防止表面污染，氧化等。基板处理系统被配置为提供 高产量和紧凑的占地面积，用于在指定的PVD室中不同材料层的原位溅射。

公开(公告)号：US20070046927A1

公开(公告)日：2007-03-01

申请号：US11216801

申请日：2005-08-31

申请人： Hienminh Le ,  Akihiro Hosokawa

发明人： Hienminh Le ,  Akihiro Hosokawa

IPC分类号： G01N21/88 ,  G01B11/28

CPC分类号： H01L21/67207 ,  C23C14/54 ,  C23C14/568 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67253 ,  H01L21/67288

摘要： Embodiments of an apparatus and method of monitoring and controlling a large area substrate processing chamber are provided. Multiple types of metrology tools can be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. Several number of a particular type of metrology tools can also be installed in the substrate processing system to measure film properties after substrate processing in a processing chamber. The metrology tools can be installed in a metrology chamber, a process chamber, a transfer chamber, or a loadlock.

摘要翻译： 提供了一种监视和控制大面积衬底处理室的装置和方法的实施例。 可以在基板处理系统中安装多种计量工具，以在处理室中的基板处理之后测量膜性质。 也可以在基板处理系统中安装若干数量的特定类型的计量工具，以在处理室中的基板处理之后测量膜性质。 计量工具可以安装在计量室，处理室，转移室或装载锁中。

公开(公告)号：US20070029642A1

公开(公告)日：2007-02-08

申请号：US11213348

申请日：2005-08-24

申请人： Makoto Inagawa ,  Akihiro Hosokawa

发明人： Makoto Inagawa ,  Akihiro Hosokawa

IPC分类号： H01L29/06

CPC分类号： H01L21/67109

摘要： A substrate support assembly and method for controlling the temperature of a substrate within a process chamber are provided. A substrate support assembly includes an thermally conductive body comprising a stainless steel material, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, a cooling plate positioned below the thermally conductive body, a base support structure comprising a stainless steel material, positioned below the cooling plate and adapted to structurally support the thermally conductive body, and one or more cooling channels adapted to be supported by the base support structure and positioned between the cooling plate and the base support structure. A process chamber comprising the substrate support assembly of the invention is also provided.

摘要翻译： 提供了用于控制处理室内的衬底的温度的衬底支撑组件和方法。 衬底支撑组件包括导热体，其包括不锈钢材料，在导热体表面上的衬底支撑表面，并且适于在其上支撑大面积衬底，一个或多个嵌入导热体内的加热元件， 位于所述导热体下方的冷却板，包括位于所述冷却板下方并适于结构地支撑所述导热体的不锈钢材料的基座支撑结构，以及适于由所述基座支撑结构支撑的一个或多个冷却通道，以及 位于冷却板和基座支撑结构之间。 还提供了包括本发明的基板支撑组件的处理室。

公开(公告)号：US20070012663A1

公开(公告)日：2007-01-18

申请号：US11247705

申请日：2005-10-11

申请人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

发明人： Akihiro Hosokawa ,  Hienminh Le ,  Makoto Inagawa ,  John White

IPC分类号： B23K9/02

CPC分类号： H01L21/68742 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/3447

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.

摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。