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110 条记录 (耗时 0.068 秒)

    Fluorescent Lamp, Back Light Unit, And Method Of Manufacturing The Fluorescent Lamp
    81.
    发明申请
    Fluorescent Lamp, Back Light Unit, And Method Of Manufacturing The Fluorescent Lamp 审中-公开
    荧光灯，背光灯和荧光灯制造方法

    公开(公告)号：US20080290778A1

    公开(公告)日：2008-11-27

    申请号：US11628915

    申请日：2005-05-30

    申请人： Hirofumi Yamashita ,  Nozomu Hashimoto ,  Yusuke Mori ,  Hisashi Dejima ,  Tatsuo Maeda

    发明人： Hirofumi Yamashita ,  Nozomu Hashimoto ,  Yusuke Mori ,  Hisashi Dejima ,  Tatsuo Maeda

    IPC分类号： H01J1/62 ,  H01J9/02

    CPC分类号： H01J61/305 ,  H01J61/16 ,  H01J61/26 ,  H01J61/325 ,  H01J61/72 ,  H01J65/046

    摘要： A fluorescent lamp including a curved glass bulb that has a layer including a phosphor layer on an inner surface, mercury and a rare gas enclosed inside, and a pair of electrodes at both ends, and when a tube inner diameter (mm) of the glass bulb is plotted on a horizontal axis of an orthogonal coordinate system and a total amount of CO2 and CO (mol %) contained in gas present inside the glass bulb is plotted on a vertical axis of the orthogonal coordinate system, the tube inner diameter and the total amount of CO2 and CO are in a predetermined area or on a boundary thereof, the predetermined area being bounded by line segments AB, BC, CD, and DA that connect a point A (1.5 mm, 0.008 mol %), a point B (4.0 mm, 0.0005 mol %), a point C (4.0 mm, 0 mol %), and a point D (1.5 mm, 0 mol %) in the stated order. As a result, a fluorescent lamp that has no illumination failure caused by snaking can be obtained even though the fluorescent lamp is in a curved shape.

    摘要翻译： 一种荧光灯，其包括具有内表面上的荧光体层，汞和封闭内部的稀有气体的层的弯曲玻璃灯泡和两端的一对电极，并且当玻璃的管内径（mm） 将灯泡绘制在正交坐标系的水平轴上，并且将包含在玻璃灯泡内的气体中的CO 2和CO（mol％）的总量绘制在正交坐标系的垂直轴上，管内径和 CO 2和CO的总量位于预定区域或其边界上，该预定区域由连接点A（1.5mm，0.008mol％），点B（B，B）的线段AB，BC，CD和DA （4.0mm，0.0005mol％），点C（4.0mm，0mol％）和点D（1.5mm，0mol％）。 结果，即使荧光灯处于弯曲形状，也可以获得没有由蛇形引起的照明故障的荧光灯。

    Solid-state imaging device
    82.
    发明申请
    Solid-state imaging device 失效

    公开(公告)号：US20070262241A1

    公开(公告)日：2007-11-15

    申请号：US11826927

    申请日：2007-07-19

    申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

    发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

    摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

    CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY
    84.
    发明申请
    CMOS (COMPLEMENTARY METAL OXIDE SEMICONDUCTOR) TYPE SOLID-STATE IMAGE PICKUP DEVICE USING N/P+ SUBSTRATE IN WHICH N-TYPE SEMICONDUCTOR LAYER IS LAMINATED ON P+ TYPE SUBSTRATE MAIN BODY 有权
    CMOS（补充金属氧化物半导体）类型固体状态图像拾取器件使用N + P +衬底，其中N型半导体层层合在P +型衬底上主体

    公开(公告)号：US20070108487A1

    公开(公告)日：2007-05-17

    申请号：US11558200

    申请日：2006-11-09

    申请人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

    发明人： Ikuko Inoue ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Nagataka Tanaka ,  Tetsuya Yamaguchi

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14634 ,  H01L27/14609 ,  H01L27/1463

    摘要： A solid-state image pickup device includes a semiconductor substrate including a substrate main body having P-type impurities and a first N-type semiconductor layer provided on the substrate main body, an image pickup area including a plurality of photoelectric converters in which the plurality of photoelectric converters include second N-type semiconductor layers, the second N-type semiconductor layers being provided on a surface portion of the first N-type semiconductor layer independently of one another, and a first peripheral circuit area including a first P-type semiconductor layer formed on the first N-type semiconductor layer. The solid-state image pickup device further includes a second peripheral circuit area including a second P-type semiconductor layer formed on the first N-type semiconductor layer and connected to the substrate main body.

    摘要翻译： 固态摄像装置包括：半导体衬底，包括具有P型杂质的衬底主体和设置在衬底主体上的第一N型半导体层;摄像区，包括多个光电转换器，其中多个 光电转换器包括第二N型半导体层，第二N型半导体层彼此独立地设置在第一N型半导体层的表面部分上，第一外围电路区域包括第一P型半导体 层，形成在第一N型半导体层上。 固体摄像装置还包括第二外围电路区域，其包括形成在第一N型半导体层上并连接到基板主体的第二P型半导体层。

    Computer system and a method for controlling a computer system
    86.
    发明授权
    Computer system and a method for controlling a computer system 失效
    计算机系统和计算机系统的控制方法

    公开(公告)号：US06931640B2

    公开(公告)日：2005-08-16

    申请号：US09756282

    申请日：2001-01-09

    申请人： Masayasu Asano ,  Toshiaki Arai ,  Hirofumi Yamashita

    发明人： Masayasu Asano ,  Toshiaki Arai ,  Hirofumi Yamashita

    IPC分类号： G06F11/20 ,  G06F9/46 ,  G06F9/50 ,  G06F11/00 ,  G06F11/14 ,  G06F15/177

    CPC分类号： G06F9/5011 ,  G06F11/142 ,  G06F11/2035

    摘要： In a cluster system including a plurality of operating systems operating on one computer, computer resources can be updated for and reallocated to each operating system. When the operating systems are used as active or standby operating systems, a multiple operating system management controller monitors the state of each operating system. At a failure of an active operating system, the controller allocates a larger part of computer resources to another operating system in a normal state and assigns the operating system as a new active operating system. Regardless of the failure, the computer system can be operated without changing processing capability thereof. The controller can monitor load of each operating system to allocate computer resources to the operating system according to the load.

    摘要翻译： 在包括在一个计算机上操作的多个操作系统的集群系统中，可以更新计算机资源并将其重新分配给每个操作系统。 当操作系统用作主动或备用操作系统时，多操作系统管理控制器监视每个操作系统的状态。 在主动操作系统发生故障时，控制器将大部分计算机资源分配给处于正常状态的另一个操作系统，并将操作系统分配为新的主动操作系统。 不管故障如何，可以在不改变其处理能力的情况下操作计算机系统。 控制器可以监控每个操作系统的负载，以根据负载将计算机资源分配给操作系统。

    System and method for remote control
    87.
    发明申请
    System and method for remote control 失效
    远程控制系统和方法

    公开(公告)号：US20050123109A1

    公开(公告)日：2005-06-09

    申请号：US10846625

    申请日：2004-05-17

    申请人： Toshihiro Yamagishi ,  Hirofumi Yamashita

    发明人： Toshihiro Yamagishi ,  Hirofumi Yamashita

    IPC分类号： G06F13/00 ,  H04L12/12 ,  H04L12/28 ,  H04L29/12 ,  H04Q9/00 ,  H04M11/00 ,  H04Q7/00

    CPC分类号： H04L61/6022 ,  H04L12/12 ,  H04L12/2805 ,  H04L12/282 ,  H04L29/12839 ,  Y02D50/40

    摘要： In this invention, an apparatus of which the power supply is in the off state is remotely controlled through a communications network. Each of one or a plurality of controlled apparatus has a ROM for holding the MAC address of the controlled apparatus, and a network control IC that reads out the MAC address from the ROM and transmits it through a LAN to a control apparatus. The control apparatus receives the one or plurality of MAC addresses from the one or plurality of controlled apparatus through the LAN, stores the received one or plurality of MAC addresses in a cache memory and controls the one or plurality of controlled apparatus by using the one or plurality of MAC addresses stored in the cache memory.

    摘要翻译： 在本发明中，通过通信网络远程控制电源处于关闭状态的装置。 一个或多个受控装置中的每一个具有用于保持受控装置的MAC地址的ROM和从ROM读出MAC地址并通过LAN将其发送到控制装置的网络控制IC。 控制装置通过LAN从一个或多个受控装置接收一个或多个MAC地址，将所接收的一个或多个MAC地址存储在高速缓冲存储器中，并通过使用一个或多个受控装置 存储在高速缓冲存储器中的多个MAC地址。

    MOS-type solid state imaging device with high sensitivity
    89.
    发明授权
    MOS-type solid state imaging device with high sensitivity 失效
    高灵敏度的MOS型固态成像装置

    公开(公告)号：US06674470B1

    公开(公告)日：2004-01-06

    申请号：US08933975

    申请日：1997-09-19

    申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

    发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

    IPC分类号： H04N314

    CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

    摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

    摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

    Solid-state imaging device
    90.
    发明授权
    Solid-state imaging device 有权

    公开(公告)号：US06486498B2

    公开(公告)日：2002-11-26

    申请号：US09956044

    申请日：2001-09-20

    申请人： Hirofumi Yamashita

    发明人： Hirofumi Yamashita

    IPC分类号： H01L31062

    CPC分类号： H01L27/14689 ,  H01L27/14609

    摘要： A solid-state imaging device includes a semiconductor substrate including a surface region of a second conductivity type, and plural unit pixels arranged in a matrix form on the surface region of the second conductivity type. Each of the unit pixels includes a first semiconductor region of a first conductivity type separated by a preset distance from the surface of the surface region in the depth direction and accumulates signal charges obtained by photo-electrical conversion of input light, and a gate electrode formed above the surface region, adjacent to the first semiconductor region and controlling readout of the signal charge accumulated in the first semiconductor region, end portions of the gate electrode and the first semiconductor region separated by a preset distance in a horizontal direction. Thus, the signal charge can be easily read-out and occurrence of thermal noise at the dark time, dark current noise, image-lag can be suppressed.