公开(公告)号：US07528074B2

公开(公告)日：2009-05-05

申请号：US10588698

申请日：2005-02-02

申请人： Tadahiro Ohmi ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Tetsuya Goto

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76814

摘要： During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby reducing the damage. In the low-rate etching where the gas composition is also altered, a firm fluorocarbon film is formed on the bottom of the contact hole, and the etching can be carried out while protecting the silicon surface. Consequently, inactivation of the impurities doped in the silicon surface can be prevented.

摘要翻译： 在蚀刻接触孔期间，不仅改变了离子辐射的能量，而且改变了气体组成，从而将蚀刻从高速蚀刻改变为低速蚀刻，从而减少了损伤。 在气体组成也变化的低速蚀刻中，在接触孔的底部形成坚固的碳氟膜，并且可以在保护硅表面的同时进行蚀刻。 因此，可以防止在硅表面中掺杂的杂质失活。

公开(公告)号：US20090066997A1

公开(公告)日：2009-03-12

申请号：US12027400

申请日：2008-02-07

申请人： Tomokazu Nakamura ,  Akihiro Sato ,  Akihiro Shimizu ,  Tetsuya Goto ,  Katsuaki Hirai ,  Hideki Kushida

发明人： Tomokazu Nakamura ,  Akihiro Sato ,  Akihiro Shimizu ,  Tetsuya Goto ,  Katsuaki Hirai ,  Hideki Kushida

IPC分类号： G06F3/12

CPC分类号： B65H5/26 ,  B65H29/60 ,  B65H37/00 ,  B65H2301/10 ,  B65H2301/23 ,  B65H2301/50 ,  B65H2511/415 ,  B65H2513/42 ,  B65H2220/01 ,  B65H2220/02

摘要： A sheet processing system comprises a plurality of sheet processing devices, a primary sheet conveyance path, a secondary sheet conveyance path, and a controller which controls the sheet processing devices. The controller uses the primary sheet conveyance path to execute one job, and uses the secondary sheet conveyance path to execute another job in parallel with that one job.

摘要翻译： 片材处理系统包括多个片材处理装置，初级片材输送路径，次要片材输送路径和控制片材处理装置的控制器。 控制器使用主纸张传送路径执行一个作业，并且使用第二纸张传送路径来与该一个作业并行地执行另一作业。

公开(公告)号：US20090007725A1

公开(公告)日：2009-01-08

申请号：US12087856

申请日：2007-03-13

申请人： Takayasu Fujiura ,  Yasuko Yakou ,  Satoshi Nishida ,  Yuuji Taniguchi ,  Tetsuya Goto

发明人： Takayasu Fujiura ,  Yasuko Yakou ,  Satoshi Nishida ,  Yuuji Taniguchi ,  Tetsuya Goto

IPC分类号： C22C38/00 ,  B22F1/00

CPC分类号： B22F1/0059

摘要： The present invention relates to a mixed powder for powder metallurgy containing an iron-base powder and a carbon supply component, in which the carbon supply component contains a graphite powder and a carbon black, and in which a mixing ratio of the graphite powder to the carbon black is in the range of 25 to 85 parts by weight to 75 to 15 parts by weight; and a mixed powder for powder metallurgy containing an iron-base powder and a carbon supply component, in which the carbon supply component contains, as a main component, a carbon black having a dibutyl phthalate absorption of 60 mL/100 g or less and a nitrogen absorption specific surface area of 50 m2/g or less.The mixed powder for powder metallurgy of the invention is less in the dust generation and segregation of the carbon supply component. Additionally, when the mixed powder for powder metallurgy of the invention is used, a green compact and a sintered body excellent in the mechanical property can be produced.

摘要翻译： 本发明涉及含有铁基粉末和碳供给成分的粉末冶金用混合粉末，其中碳供给成分含有石墨粉末和炭黑，其中石墨粉末与 炭黑在25〜85重量份〜75〜15重量份的范围内; 和含有铁基粉末和碳供给成分的粉末冶金用混合粉末，其中，碳供给成分含有邻苯二甲酸二丁酯吸收60mL / 100g以下的炭黑作为主要成分， 氮吸附比表面积为50m2 / g以下。 本发明的粉末冶金用混合粉末在碳供给成分的粉尘产生和分离中较少。 此外，当使用本发明的粉末冶金用混合粉末时，可以制造机械特性优异的生坯和烧结体。

公开(公告)号：US20080187747A1

公开(公告)日：2008-08-07

申请号：US11883421

申请日：2006-01-20

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kazumasa Kawase

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Tetsuya Goto ,  Kazumasa Kawase

IPC分类号： H01L21/3205 ,  H01L21/31

CPC分类号： H01L21/02332 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3185 ,  H01L29/518 ,  Y10T428/265

摘要： A dielectric film wherein N in the state of an Si3=≡N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film can achieve the prevention of the B diffusion and also the prevention of the deterioration of the NBTI resistance in combination. When the Ar/N2 radical nitridation is used, it is difficult for the resultant oxide film to satisfy the condition wherein N in the above bonding state is present in a concentration of 3 atomic % or more in the surface side of an oxide film and simultaneously is present in a concentration of 0.1 atomic % or less in the interface side of the oxide film, whereas, the above distribution of the N concentration can be achieved by using any of the gas combinations of Xe/N2, Kr/N2, Ar/NH3, Xe/NH3, Kr/NH3, Ar/N2/H2, Xe/N2/H2 and Kr/N2/H2.

摘要翻译： 在氧化物膜的表面侧以3原子％以上的浓度存在Si 3 N 3≡N键的状态下的N的电介质膜，其浓度为 在氧化膜的界面侧为0.1原子％以下，可以防止B扩散，并且可以防止NBTI电阻的组合劣化。 当使用Ar / N 2自由基氮化时，所得到的氧化物膜难以满足在上述接合状态下的N以3原子％以上的浓度存在的条件 氧化膜的表面侧，同时在氧化膜的界面侧以0.1原子％以下的浓度存在，而N浓度的上述分布可以通过使用Xe / N / 2，Kr / N 2，Ar / NH 3，Xe / NH 3，Kr / NH 2， 2/3/2/2/2/2/2/2 和Kr / N 2 H 2 / H 2。

公开(公告)号：US20080053304A1

公开(公告)日：2008-03-06

申请号：US11894508

申请日：2007-08-20

申请人： Tetsuya Goto ,  Takeharu Matsuzaki ,  Shigeto Nakajima ,  Tadashi Noguchi

发明人： Tetsuya Goto ,  Takeharu Matsuzaki ,  Shigeto Nakajima ,  Tadashi Noguchi

IPC分类号： F15B11/08

CPC分类号： F15B11/044 ,  F15B13/01 ,  F15B2211/327 ,  F15B2211/351 ,  F15B2211/353 ,  F15B2211/7052 ,  F15B2211/75 ,  Y10T137/8671

摘要： A hydraulic control apparatus for a single action cylinder includes a switch valve for supplying fluid to and draining fluid from the cylinder, a cylinder side passage connected to the cylinder, a switch valve side passage connected to the switch valve, and a valve body accommodation chamber. The valve body accommodation chamber linearly extends between the cylinder side passage and the switch valve side passage. An on-off valve is located in a vicinity of a first end of the valve body accommodation chamber. The on-off valve defines a first back pressure chamber. A flow control valve is located in a vicinity of a second end that is opposite to the first end. The flow control valve defines a second back pressure chamber. The on-off valve and the flow control valve are separated from each other by a partitioning member.

摘要翻译： 用于单动作气缸的液压控制装置包括用于向缸体供给流体和排出流体的开关阀，连接到气缸的气缸侧通道，连接到开关阀的开关阀侧通道和阀体容置室 。 阀体容纳室在气缸侧通路与开关阀侧通路之间直线延伸。 开关阀位于阀体容纳室的第一端附近。 开关阀限定第一背压室。 流量控制阀位于与第一端相对的第二端附近。 流量控制阀限定第二背压室。 开关阀和流量控制阀通过分隔构件彼此分离。

公开(公告)号：US07273136B2

公开(公告)日：2007-09-25

申请号：US11009332

申请日：2004-12-10

申请人： Tetsuya Goto ,  Keinosuke Ichikawa ,  Yasuhiro Maeda ,  Hiroyuki Horiuchi

发明人： Tetsuya Goto ,  Keinosuke Ichikawa ,  Yasuhiro Maeda ,  Hiroyuki Horiuchi

IPC分类号： F16D65/24 ,  B60T13/22

CPC分类号： B60T13/147 ,  B60T13/04 ,  B60T13/10

摘要： A hydraulic parking brake device is selectively switched between a braking state and a non-braking state. A braking force decreases as a pressure in the control oil chamber increases and increases as the pressure in the control oil chamber decreases. The device includes a discharged oil restrictor located in a discharge passage and an accumulator connected to the control oil chamber. The accumulator is capable of releasing hydraulic oil to the control oil chamber when the braking force is greater than that at the time when the parking brake device is switched from the non-braking state to the braking state and the braking force can further be increased during the braking state of the parking brake device. Thus, the parking brake device can gradually brake the vehicle from the running state.

摘要翻译： 选择性地在制动状态和非制动状态之间切换液压驻车制动装置。 随着控制油室中的压力增加，制动力随着控制油室中的压力的​​减小而减小。 该装置包括位于排放通道中的排放的限油器和连接到控制油室的蓄能器。 当制动力大于驻车制动装置从非制动状态切换到制动状态时，蓄能器能够将液压油释放到控制油室，并且制动力可以进一步增加 驻车制动装置的制动状态。 因此，驻车制动装置能够从行驶状态逐渐制动车辆。

公开(公告)号：US20070144671A1

公开(公告)日：2007-06-28

申请号：US10584340

申请日：2004-09-24

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the center of the shower plate thereby making the plasma excitation gas flow uniform.

摘要翻译： 一种用于通过增加从喷淋板的中心退出的喷淋板的每单位面积排列的排气孔的数量而均匀地处理基板的系统，或者从喷淋中心离开时增加排气孔的半径 从而使等离子体激发气体流动均匀。

公开(公告)号：US07141756B2

公开(公告)日：2006-11-28

申请号：US10473062

申请日：2002-03-28

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： B23K10/00 ,  B23K9/00

CPC分类号： H01J37/32192 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32339

摘要： A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.

摘要翻译： 公开了一种微波等离子体处理装置，其能够在等离子体处理的压力下实现快速容易的等离子体点火。在微波等离子体处理装置中，提供等离子体点火促进单元以促进由微波引起的等离子体点火。 等离子体点火促进单元包括发射真空紫外线的氘灯和允许真空紫外线穿透和照射等离子体激发空间的透射窗。 传输窗是凸透镜，聚焦真空紫外线以增强等离子体激发气体的离子化。 通过这样的结构，能够容易且快速地引起等离子体点火。

公开(公告)号：US07097735B2

公开(公告)日：2006-08-29

申请号：US10296614

申请日：2002-03-28

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/511 ,  C30B25/105 ,  H01J37/32192

摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, the efficiency of cooling of a shower plate is optimized and simultaneously the efficiency of microwave excitation is optimized, by causing a radiation surface of the radial line slot antenna to make an intimate contact with a cover plate that forms a part of an outer wall of the processing chamber and makes an intimate contact with the shower plate.

摘要翻译： 在使用径向线槽天线的微波等离子体处理装置中，优化喷淋板的冷却效率，同时通过使径向线槽天线的辐射面进行紧密接触，微波激发的效率最优化 具有形成处理室的外壁的一部分并与淋浴板紧密接触的盖板。

公开(公告)号：US20060118241A1

公开(公告)日：2006-06-08

申请号：US11337026

申请日：2006-01-23

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.

摘要翻译： 在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而 中等阻抗变化。 因此，提高供电效率，减少放电确保等离子体的稳定形成。