公开(公告)号：US20080220601A1

公开(公告)日：2008-09-11

申请号：US11714334

申请日：2007-03-05

Applicant: Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

Inventor： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC: H01L21/20 ,  H01L21/4763

CPC classification number: H01L45/04 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US07211525B1

公开(公告)日：2007-05-01

申请号：US11082369

申请日：2005-03-16

Applicant: Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

Inventor： Sunil Shanker ,  Sean Cox ,  Chi-I Lang ,  Judy H. Huang ,  Minh Anh Nguyen ,  Ken Vo ,  Wenxian Zhu

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/31612 ,  C23C16/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.

Abstract translation: 描述了用绝缘膜填充半导体衬底上的间隙的方法。 该方法减少或消除侧壁沉积和顶帽形成。 在电介质膜沉积期间，这些方法还减少或消除了蚀刻步骤的需要。 所述方法包括在沉积介质膜之前用氢等离子体处理半导体衬底。 在一些实施方案中，使用氢处理与高速沉积工艺相结合。

公开(公告)号：US08859427B2

公开(公告)日：2014-10-14

申请号：US13335011

申请日：2011-12-22

Applicant: Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Sun ,  Jinhong Tong

Inventor： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: H01L21/302 ,  C23C18/54 ,  H01L21/288 ,  H01L21/768 ,  H01L21/02 ,  C23C18/16

CPC classification number: H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

Abstract translation: 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US08476107B2

公开(公告)日：2013-07-02

申请号：US13096719

申请日：2011-04-28

Applicant: Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-Wen Sun ,  Jinhong Tong

Inventor： Nitin Kumar ,  Chi-I Lang ,  Tony Chiang ,  Zhi-Wen Sun ,  Jinhong Tong

IPC: H01L21/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US20120295436A1

公开(公告)日：2012-11-22

申请号：US13547856

申请日：2012-07-12

Applicant: Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

Inventor： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC: H01L21/768

CPC classification number: H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

Abstract: Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

Abstract translation: 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US08298891B1

公开(公告)日：2012-10-30

申请号：US12603510

申请日：2009-10-21

Applicant: Tony Chiang ,  Prashant Phatak ,  Chi-I Lang

Inventor： Tony Chiang ,  Prashant Phatak ,  Chi-I Lang

IPC: H01L21/336

CPC classification number: H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/148 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1641

Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

Abstract translation: 描述电阻式切换存储元件。 所述存储元件包括第一电极，所述第一电极上的多孔层，包括嵌入所述多孔层的多个孔中的点缺陷，以及位于所述多孔层上的第二电极，其中所述非易失性存储元件构造成在 高电阻状态和低电阻状态。

公开(公告)号：US08298837B2

公开(公告)日：2012-10-30

申请号：US13072083

申请日：2011-03-25

Applicant: Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: H01L21/00

CPC classification number: H01L51/0031 ,  H01L51/56

Abstract: A system and method of increasing productivity of OLED material screening includes providing a substrate that includes an organic semiconductor, processing regions on the substrate by combinatorially varying parameters associated with the OLED device production on the substrate, performing a first characterization test on the processed regions on the substrate to generate first results, processing regions on the substrate in a combinatorial manner by varying parameters associated with the OLED device production on the substrate based on the first results of the first characterization test, performing a second characterization test on the processed regions on the substrate to generate second results, and determining whether the substrate meets a predetermined quality threshold based on the second results.

Abstract translation: 提高OLED材料筛选的生产率的系统和方法包括提供包括有机半导体的衬底，通过组合地改变与衬底上的OLED器件生产相关的参数来在衬底上处理区域，对处理的区域进行第一表征测试 所述衬底产生第一结果，基于所述第一表征测试的第一结果，通过改变与所述衬底上的OLED器件生产相关联的参数，以组合方式处理所述衬底上的区域，对所述衬底上的所述处理区域进行第二特性测试 衬底以产生第二结果，以及基于第二结果确定衬底是否满足预定质量阈值。

公开(公告)号：US08283214B1

公开(公告)日：2012-10-09

申请号：US11963656

申请日：2007-12-21

Applicant: Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

Inventor： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

IPC: H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC classification number: H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

Abstract: Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material such as: Ni, Pt, Ir, Ti, Al, Cu, Co, Ru, Rh, a Ni alloy, a Pt alloy, an Ir alloy, a Ti alloy, an Al alloy, a Cu alloy, a Co alloy, an Ru alloy, and an Rh alloy.

Abstract translation: 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法，例如：Ni，Pt，Ir，Ti，Al，Cu，Co，Ru，Rh，Ni合金，Pt合金，Ir 合金，Ti合金，Al合金，Cu合金，Co合金，Ru合金和Rh合金。

公开(公告)号：US20120119768A1

公开(公告)日：2012-05-17

申请号：US12948257

申请日：2010-11-17

Applicant: Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

Inventor： Yun Wang ,  Tony P. Chiang ,  Ryan Clarke ,  Chi-I Lang ,  Yoram Schwarz

IPC: G01R31/3187 ,  H01L21/66

CPC classification number: H01L22/14

Abstract: A method and system of improved reliability testing includes providing a first substrate and a second substrate, each substrate comprising only a first metallization layer; processing regions on a first substrate by combinatorially varying at least one of materials, unit processes, and process sequences; performing a first reliability test on the processed regions on the first substrate to generate first results; processing regions on a second substrate in a combinatorial manner by varying at least one of materials, unit processes, and process sequences based on the first results of the first reliability test; performing a second reliability test on the processed regions on the second substrate to generate second results; and determining whether the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

Abstract translation: 改进的可靠性测试的方法和系统包括提供第一衬底和第二衬底，每个衬底仅包括第一金属化层; 通过组合地改变材料，单元过程和工艺顺序中的至少一个来处理第一衬底上的处理区域; 对所述第一基板上的所述经处理区域进行第一可靠性测试以产生第一结果; 基于第一可靠性测试的第一结果，通过改变材料，单元过程和过程序列中的至少一个来以组合的方式处理第二基板上的区域; 对所述第二基板上的所述经处理区域进行第二可靠性测试以产生第二结果; 以及基于所述第二结果来确定所述第一基板和所述第二基板是否满足预定质量阈值。

公开(公告)号：US20110279810A1

公开(公告)日：2011-11-17

申请号：US12952855

申请日：2010-11-23

Applicant: Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: G01N21/00

CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

Abstract: Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.

Abstract translation: 使用发射光的同时测量太阳能电池的内部量子效率和外部量子效率; 三光束分离器，其将光分解成太阳能电池光和参考光，其中太阳能电池光照射到太阳能电池; 检测参考光的参考检测器; 反射光检测器，其检测反射光，其中所述反射光包括从太阳能电池反射的太阳能电池光的一部分; 可操作地耦合到太阳能电池的源计量器; 可操作地耦合到太阳能电池，参考检测器和反射检测器的多路复用器; 以及同时计算太阳能电池的内部量子效率和外部量子效率的计算装置。