公开(公告)号：US20210118691A1

公开(公告)日：2021-04-22

申请号：US17137637

申请日：2020-12-30

Applicant: Applied Materials, Inc.

Inventor： Shishi Jiang ,  Pramit Manna ,  Bo Qi ,  Abhijit Basu Mallick ,  Rui Cheng ,  Tomohiko Kitajima ,  Harry S. Whitesell ,  Huiyuan Wang

IPC: H01L21/311 ,  H01L21/02

Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

公开(公告)号：US10916505B2

公开(公告)日：2021-02-09

申请号：US16536603

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/26 ,  H01L21/3205 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US10910381B2

公开(公告)日：2021-02-02

申请号：US16527915

申请日：2019-07-31

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US10851454B2

公开(公告)日：2020-12-01

申请号：US16597526

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick

IPC: C23C16/14 ,  H01L21/285 ,  C23C16/455

Abstract: A method of forming conformal amorphous metal films is disclosed. A method of forming crystalline metal films with a predetermined orientation is also disclosed. An amorphous nucleation layer is formed on a substrate surface. An amorphous metal layer is formed from the nucleation layer by atomic substitution. A crystalline metal layer is deposited on the amorphous metal layer by atomic layer deposition.

公开(公告)号：US10784107B2

公开(公告)日：2020-09-22

申请号：US15969119

申请日：2018-05-02

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Pramit Manna ,  Yihong Chen ,  Ziqing Duan ,  Rui Cheng ,  Shishi Jiang

IPC: H01L21/3065 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/033 ,  H01L21/768 ,  H01L21/3215

Abstract: Methods of forming self-aligned patterns are described. A film material is deposited on a patterned film to fill and cover features formed by the patterned film. The film material is recessed to a level below the top of the patterned film. The recessed film is converted to a metal film by exposure to a metal precursor followed by volumetric expansion of the metal film.

公开(公告)号：US10770349B2

公开(公告)日：2020-09-08

申请号：US15902362

申请日：2018-02-22

Applicant: Applied Materials, Inc.

Inventor： Abhijit Basu Mallick ,  Ziqing Duan

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/02 ,  H01L21/311

Abstract: Processing methods to create self-aligned contacts are described. A conformal liner can be deposited in a feature in a substrate surface leaving a gap between the walls of the liner. A tungsten film can be deposited in the gap of the liner and volumetrically expanded. The expanded film can be removed and replaced with a contact material to a make a contact. In some embodiments, a conformal tungsten film can be formed in the feature leaving a gap between the walls. A dielectric can be deposited in the gap and the conformal tungsten film can be volumetrically expanded to grow two pillars. The pillars can be removed and replaced with a contact material to make two contacts.

公开(公告)号：US10741435B2

公开(公告)日：2020-08-11

申请号：US16393357

申请日：2019-04-24

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yihong Chen ,  Kelvin Chan ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Pramit Manna

IPC: H01L21/32 ,  H01L21/762 ,  H01L21/28 ,  H01L21/8234 ,  H01L29/43

Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.

公开(公告)号：US20200227275A1

公开(公告)日：2020-07-16

申请号：US16831251

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US10714339B2

公开(公告)日：2020-07-14

申请号：US16246776

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Fei Wang ,  Miaojun Wang ,  Pramit Manna ,  Shishi Jiang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/32 ,  H01L21/311

Abstract: Methods of selectively depositing a mask layer on a surface of a patterned substrate and self-aligned patterned masks are provided herein. In one embodiment, a method of selectivity depositing a mask layer includes positioning the patterned substrate on a substrate support in a processing volume of a processing chamber, exposing the surface of the patterned substrate to a parylene monomer gas, forming a first layer on the patterned substrate, wherein the first layer comprises a patterned parylene layer, and depositing a second layer on the first layer. In another embodiment, a self-aligned patterned mask comprises a parylene layer comprising a plurality of parylene features and a plurality of openings, the parylene layer is disposed on a patterned substrate comprising a dielectric layer and a plurality of metal features, the plurality of metal feature comprise a parylene deposition inhibitor metal, and the plurality of parylene features are selectivity formed on dielectric surfaces of the dielectric layer.

公开(公告)号：US10559497B2

公开(公告)日：2020-02-11

申请号：US16006402

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Yihong Chen ,  Shishi Jiang ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/00 ,  H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/02

Abstract: Methods for filling a substrate feature with a seamless tungsten fill are described. The methods include depositing a tungsten film, oxidizing the tungsten film to a tungsten oxide pillar, reducing the tungsten oxide film to a seamless tungsten gapfill and optionally depositing additional tungsten on the tungsten gapfill.