公开(公告)号：US20060073080A1

公开(公告)日：2006-04-06

申请号：US11241813

申请日：2005-09-30

Applicant: Anna Tonkovich ,  Laura Silva ,  David Hesse ,  Michael Marchiando ,  Micheal Lamont ,  Dongming Qiu ,  Terence Dritz ,  Kristina Pagnotto ,  Richard Stevenson ,  Steven Perry ,  Maddalena Fanelli ,  Ravi Arora ,  Bin Yang ,  Sean Fitzgerald ,  Timothy Sullivan ,  Kai Tod Jarosch ,  Thomas Yuschak

Inventor： Anna Tonkovich ,  Laura Silva ,  David Hesse ,  Michael Marchiando ,  Micheal Lamont ,  Dongming Qiu ,  Terence Dritz ,  Kristina Pagnotto ,  Richard Stevenson ,  Steven Perry ,  Maddalena Fanelli ,  Ravi Arora ,  Bin Yang ,  Sean Fitzgerald ,  Timothy Sullivan ,  Kai Tod Jarosch ,  Thomas Yuschak

IPC: B01L3/00

CPC classification number: B01F3/0446 ,  B01F3/0807 ,  B01F5/0475 ,  B01F5/0476 ,  B01F5/0483 ,  B01F13/0059 ,  B01F15/065 ,  B01F2003/0838 ,  B01F2003/0842 ,  B01F2215/0431 ,  B01F2215/045 ,  B01F2215/0472 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00788 ,  B01J2219/00822 ,  B01J2219/00826 ,  B01J2219/00828 ,  B01J2219/00831 ,  B01J2219/00833 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00873 ,  B01J2219/00889 ,  F28D2021/0052 ,  F28F3/12 ,  F28F2260/02 ,  Y10S516/928 ,  Y10S516/929 ,  Y10T436/2575

Abstract: The disclosed invention relates to a process for making a multiphase mixture, comprising: flowing a first fluid stream through a process microchannel, the first fluid stream comprising at least one liquid and/or at least one gas, the process microchannel having an apertured section; flowing a second fluid stream through the apertured section into the process microchannel in contact with the first fluid stream to form the multiphase mixture, the second fluid stream comprising at least one gas and/or at least one microbody-forming material, the first fluid stream forming a continuous phase in the multiphase mixture, the second fluid stream forming a discontinuous phase dispersed in the continuous phase.

公开(公告)号：US06954509B2

公开(公告)日：2005-10-11

申请号：US10117855

申请日：2002-04-08

Applicant: Bin Yang ,  Peter Bohnhoff

Inventor： Bin Yang ,  Peter Bohnhoff

IPC: H04B7/005 ,  H04B3/06 ,  H04L25/03 ,  H04B1/10 ,  H03H7/30 ,  H06F17/10

CPC classification number: H04L25/03057 ,  H04L2025/0349

Abstract: A method for channel equalization of received data includes steps of: receiving the received data in a received data packet; calculating filter setting coefficients for an input filter and calculating equalizer setting coefficients for an equalizer; setting the input filter using the filter setting coefficients and setting the equalizer using the equalizer setting coefficients; equalizing the received data using the input filter and using the equalizer; determining channel parameters for the transmission channel from the received data Xk; storing the channel parameters in a data field; and performing the step of calculating the filter setting coefficients for the input filter and calculating the equalizer setting coefficients for the equalizer by performing a GIVENS rotation of the data field.

Abstract translation: 一种接收数据信道均衡的方法，包括以下步骤：接收接收到的数据包中的接收数据; 计算输入滤波器的滤波器设置系数并计算均衡器的均衡器设置系数; 使用滤波器设置系数设置输入滤波器，并使用均衡器设置系数设置均衡器; 使用输入滤波器均衡接收到的数据并使用均衡器; 从所接收的数据X N确定传输信道的信道参数; 将信道参数存储在数据字段中; 以及执行计算输入滤波器的滤波器设定系数的步骤，并通过执行数据场的GIVENS旋转来计算均衡器的均衡器设置系数。

公开(公告)号：US10131889B1

公开(公告)日：2018-11-20

申请号：US15810007

申请日：2017-11-11

Applicant: Liming Liu ,  Bin Yang

Inventor： Liming Liu ,  Bin Yang

IPC: C12N9/20 ,  C12N15/74 ,  C12N15/00 ,  C12P9/00

Abstract: The present invention relates to the field of bioengineering. It provides a Candida antarctica lipase B mutant and its application. The mutant enzyme overcomes the limit of the parent enzyme that can exhibit high enantioselectivity towards (R)-3-TBDMSO glutaric acid methyl monoester only at temperatures below 5° C. The mutant enzyme successfully increased R-ee value at 5-70° C. The mutant D223V/A281S exhibits high R-ee value (>99%), high conversion rate (80%), and high space-time yield (107.54 g L−1 d−1). The present invention lays a foundation for industrial production of (R)-3-TBDMSO glutaric acid methyl monoester using a biosynthesis approach and provide insights into conformational dynamics-based enzyme design.

公开(公告)号：US09182661B2

公开(公告)日：2015-11-10

申请号：US13996967

申请日：2011-12-24

Applicant: Haifeng Li ,  Bin Yang

Inventor： Haifeng Li ,  Bin Yang

IPC: H04N1/405 ,  G03F5/20

CPC classification number: G03F5/20 ,  H04N1/4055

Abstract: The present application provides a screen method for intaglio printing, comprising: dividing multiple classes of regions according to a brightness range; and generating screen dots with various screen patterns for the grouped classes of regions. The present application also provides a screen device for intaglio printing, comprising: a dividing module configured to group multiple classes of regions according to the brightness range; and a generating module configured to generate screen dots with various screen patterns for the grouped classes of regions. Since multiple kinds of screen patterns are applied in the technical solutions in present application, the problem, i.e., water ripple will occur in the prior art, may be addressed, so as to improve the quality of printing.

Abstract translation: 本申请提供了一种用于凹版印刷的屏幕方法，包括：根据亮度范围划分多个类别的区域; 并且为分组的区域类别生成具有各种屏幕图案的屏幕点。 本申请还提供了一种用于凹版印刷的屏幕装置，包括：分割模块，被配置为根据亮度范围对多个类别的区域进行分组; 以及生成模块，被配置为生成用于所述分组的区域类别的各种屏幕图案的屏幕点。 由于在本申请中的技术方案中应用了多种屏幕图案，所以可以解决现有技术中出现的水波纹问题，以提高打印质量。

公开(公告)号：US09134079B2

公开(公告)日：2015-09-15

申请号：US12652027

申请日：2010-01-04

Applicant: Anna Lee Tonkovich ,  Bin Yang ,  Steven T. Perry ,  Sean P. Fitzgerald ,  Ravi Arora ,  Robert Luzenski ,  Thomas D. Yuschak

Inventor： Anna Lee Tonkovich ,  Bin Yang ,  Steven T. Perry ,  Sean P. Fitzgerald ,  Ravi Arora ,  Robert Luzenski ,  Thomas D. Yuschak

IPC: B01J10/00 ,  F28F13/06 ,  B01J19/00 ,  B01L3/00

CPC classification number: F28F13/06 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00824 ,  B01J2219/00833 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00889 ,  B01J2219/00891 ,  B01J2219/00995 ,  B01L3/502746 ,  B01L2200/027 ,  B01L2300/0864 ,  B01L2300/0887 ,  B01L2400/0487 ,  B01L2400/086 ,  F28F2260/02 ,  Y10T137/0396

Abstract: The invention provides apparatuses and techniques for controlling flow between a manifold and two or more connecting microchannels. Flow between plural connecting microchannels, that share a common manifold, can be made more uniform by the use of flow straighteners and distributors that equalize flow in connecting channels. Alternatively, flow can be made more uniform by sections of narrowed diameter within the channels. Methods of making apparatus and methods of conducting unit operations in connecting channels are also described.

Abstract translation: 本发明提供用于控制歧管和两个或更多个连接微通道之间的流动的装置和技术。 通过使用均衡连接通道中的流动的流平衡器和分配器，可以使共享共同歧管的多个连接微通道之间的流动更均匀。 或者，可以通过通道内的变窄直径的部分使流动更均匀。 还描述了在连接通道中进行单元操作的装置和方法的方法。

公开(公告)号：US09099327B2

公开(公告)日：2015-08-04

申请号：US13568839

申请日：2012-08-07

Applicant: Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

Inventor： Wilfried Haensch ,  Christian Lavoie ,  Christine Qiqing Ouyang ,  Xiaoyan Shao ,  Paul M. Solomon ,  Zhen Zhang ,  Bin Yang

IPC: H01L29/06 ,  H01L21/8238 ,  H01L29/417

CPC classification number: H01L29/0673 ,  H01L21/823814 ,  H01L29/41791

Abstract: A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.

Abstract translation: 一种多栅格结构，包括半导体衬底; 位于基板上的小于20纳米厚的超薄硅或碳体; 选择性地位于超薄硅或碳体的侧表面和顶表面上的无电沉积金属层，并且选择性地位于多结构结构的顶部上以与超薄硅或碳体电接触并最小化寄生电阻 并且其中位于其上的超薄硅或碳体和金属层形成源区和漏区以及制造该结构的工艺。

公开(公告)号：US08995023B2

公开(公告)日：2015-03-31

申请号：US13996907

申请日：2011-12-23

Applicant: Haifeng Li ,  Bin Yang

Inventor： Haifeng Li ,  Bin Yang

IPC: H04N1/405 ,  G09G3/20 ,  G06T11/40

CPC classification number: H04N1/4058 ,  G06T11/40 ,  G09G3/2011 ,  G09G2300/0426 ,  G09G2300/0443 ,  G09G2300/0452 ,  H04N1/4055

Abstract: An amplitude modulation screening method is provided. The method comprises a step of utilizing regular hexagon screen dots to form a threshold matrix for amplitude screening. In embodiments of the present application, an amplitude modulation screening apparatus is also provided. The apparatus may comprise a matrix module configured to constitute a threshold matrix for amplitude screening using regular hexagon screen dots. Due to the threshold matrix formed with regular hexagon screen dots, the method and apparatus of the present application resolve the problem of the screen dots in the prior art, and improve the printing quality.

Abstract translation: 提供了一种幅度调制屏蔽方法。 该方法包括利用正六边形屏幕点形成用于振幅筛选的阈值矩阵的步骤。 在本申请的实施例中，还提供了幅度调制筛选装置。 该装置可以包括矩阵模块，该矩阵模块被配置为使用正六边形屏幕点构成用于振幅筛选的阈值矩阵。 由于由正六边形屏幕点形成的阈值矩阵，本申请的方法和装置解决了现有技术中屏幕点的问题，并提高了打印质量。

公开(公告)号：US08987110B2

公开(公告)日：2015-03-24

申请号：US13467730

申请日：2012-05-09

Applicant: Man Fai Ng ,  Bin Yang

Inventor： Man Fai Ng ,  Bin Yang

IPC: H01L21/762 ,  H01L21/84 ,  H01L21/8238

CPC classification number: H01L21/76224 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

Abstract: A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.

Abstract translation: 提供了半导体器件结构的制造方法。 器件结构具有硅层和覆盖硅层的二氧化硅层，并且该方法开始于通过去除一部分二氧化硅和一部分硅来形成隔离凹槽。 隔离凹部填充有应力诱导性氮化硅，然后去除二氧化硅，使得应力诱导性氮化硅突出于硅上方。 接下来，暴露的硅被热氧化以形成覆盖在硅上的二氧化硅硬掩模材料。 此后，去除二氧化硅硬掩模材料的第一部分以露出硅的可接近表面，同时留下二氧化硅硬掩模材料的第二部分完好无损。 接下来，从硅的可接近表面外延生长硅锗。

公开(公告)号：US08976383B2

公开(公告)日：2015-03-10

申请号：US13976335

申请日：2011-12-27

Applicant: Wenfa Qi ,  Shuchang Han ,  Gaoyang Wang ,  Lidong Wang ,  Bin Yang

Inventor： Wenfa Qi ,  Shuchang Han ,  Gaoyang Wang ,  Lidong Wang ,  Bin Yang

IPC: G06F3/12 ,  G06K15/02 ,  H04L9/32 ,  H04N1/44 ,  H04L29/06 ,  H04L29/08 ,  G06K15/00

CPC classification number: G06F3/1238 ,  G06F3/1222 ,  G06F3/1288 ,  G06F3/1289 ,  G06K15/4095 ,  H04L63/102 ,  H04L63/20 ,  H04L67/125 ,  H04L67/34

Abstract: Disclosed is a method and system for document printing management and control and source tracking. A printing management service program runs at a server end. A printing monitoring service program runs at a client end. The printing management service program saves client end information, monitors and manages a client end computer, sets a printing management policy, and delivers operation instructions to the client end. The printing monitoring service program collects the client end information, sends the client end information to the server end, and executes the operation instruction.

Abstract translation: 公开了一种用于文件打印管理和控制和源跟踪的方法和系统。 打印管理服务程序在服务器端运行。 打印监控服务程序在客户端运行。 打印管理服务程序保存客户端信息，监控和管理客户端计算机，设置打印管理策略，并向客户端传送操作指令。 打印监控服务程序收集客户端信息，将客户端信息发送到服务器端，并执行操作指令。

公开(公告)号：US08847315B2

公开(公告)日：2014-09-30

申请号：US13465064

申请日：2012-05-07

Applicant: Bin Yang ,  Xia Li ,  Jun Yuan

Inventor： Bin Yang ,  Xia Li ,  Jun Yuan

IPC: H01L27/12 ,  H01L29/47 ,  H01L29/10 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L21/823814 ,  H01L21/28026 ,  H01L21/823828 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/1211 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/42376 ,  H01L29/47 ,  H01L29/66545 ,  H01L29/66621 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

Abstract: A complementary metal-oxide-semiconductor (CMOS) device and methods of formation thereof are disclosed. In a particular embodiment, a CMOS device includes a silicon substrate, a dielectric insulator material on the silicon substrate, and an extension layer on the dielectric insulator material. The CMOS device further includes a gate in contact with a channel and in contact with an extension region. The CMOS device also includes a source in contact with the extension region and a drain in contact with the extension region. The extension region includes a first region in contact with the source and the gate and includes a second region in contact with the drain and the gate.

Abstract translation: 公开了一种互补金属氧化物半导体（CMOS）器件及其形成方法。 在特定实施例中，CMOS器件包括硅衬底，硅衬底上的介电绝缘体材料以及介电绝缘体材料上的延伸层。 CMOS器件还包括与沟道接触并与延伸区域接触的栅极。 CMOS器件还包括与延伸区域接触的源极和与延伸区域接触的漏极。 延伸区域包括与源极和栅极接触的第一区域，并且包括与漏极和栅极接触的第二区域。