公开(公告)号：US20070128867A1

公开(公告)日：2007-06-07

申请号：US11672363

申请日：2007-02-07

申请人： Anthony Domenicucci ,  Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun Wang ,  Kwong Wong

发明人： Anthony Domenicucci ,  Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun Wang ,  Kwong Wong

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L21/28518 ,  H01L29/665

摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.

摘要翻译： 本发明提供了一种通过使用含金属的硅合金与进行两个不同的热循环的第一次退火相结合的方法来增强金属在硅化过程中的单向扩散。 第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层中的温度下进行。 第一热循环导致形成含非晶态金属的硅化物。 第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物的温度下进行。 在第一退火之后，执行选择性蚀刻以从结构中除去任何未反应的含金属合金层。 执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物相。 提供了一种金属硅化物，其厚度是自限制的。

公开(公告)号：US20070087541A1

公开(公告)日：2007-04-19

申请号：US11557259

申请日：2006-11-07

申请人： Kenneth Giewont ,  Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun-Yu Wang ,  Kwong Wong

发明人： Kenneth Giewont ,  Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun-Yu Wang ,  Kwong Wong

IPC分类号： H01L21/4763 ,  H01L21/3205

CPC分类号： C23C14/5806 ,  C23C14/16

摘要： Disclosed is a method and structure for forming a silicide on a silicon material. The invention places the silicon material in a vacuum environment, forms metal on the silicon material, and then heats the silicon surface and the metal without breaking the vacuum environment. The processes of forming the metal and heating the silicon can be performed simultaneously without breaking the vacuum environment to form the silicide as the metal is being deposited. After the foregoing processing, the invention can remove the silicon surface from the vacuum environment and perform additional heating of the silicon surface. The first heating process forms a monosilicide and the additional heating forms a disilicide.

摘要翻译： 公开了一种在硅材料上形成硅化物的方法和结构。 本发明将硅材料置于真空环境中，在硅材料上形成金属，然后在不破坏真空环境的情况下加热硅表面和金属。 当金属沉积时，形成金属和加热硅的工艺可以同时进行而不破坏真空环境以形成硅化物。 在上述处理之后，本发明可以从真空环境中去除硅表面，并对硅表面进行附加加热。 第一加热工艺形成一硅化物，另外的加热形成二硅化物。

公开(公告)号：US07129169B2

公开(公告)日：2006-10-31

申请号：US10709534

申请日：2004-05-12

申请人： Bradley P. Jones ,  Christian Lavoie ,  Robert J. Purtell ,  Yun-Yu Wang ,  Keith Kwong Hon Wong

发明人： Bradley P. Jones ,  Christian Lavoie ,  Robert J. Purtell ,  Yun-Yu Wang ,  Keith Kwong Hon Wong

IPC分类号： H01L21/44 ,  H01L21/3205

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L29/7833

摘要： A method for forming a metal silicide contact for a semiconductor device includes forming a refractory metal layer over a substrate, including active and non-active area of said substrate, and forming a cap layer over the refractory metal layer. A counter tensile layer is formed over the cap layer, wherein the counter tensile layer is selected from a material such that an opposing directional stress is created between the counter tensile layer and the cap layer, with respect to a directional stress created between the refractory metal layer and the cap layer.

摘要翻译： 一种用于形成用于半导体器件的金属硅化物接触的方法包括在衬底上形成难熔金属层，该衬底包括所述衬底的有源区和非有源区，并在难熔金属层上形成覆盖层。 反面拉伸层形成在覆盖层上方，其中相对抗拉层选自材料，使得在相对拉伸层和盖层之间产生相对的方向应力，相对于难熔金属之间产生的方向应力 层和盖层。

公开(公告)号：US07119012B2

公开(公告)日：2006-10-10

申请号：US10838377

申请日：2004-05-04

申请人： Roy A. Carruthers ,  Cedrik Y. Coia ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

发明人： Roy A. Carruthers ,  Cedrik Y. Coia ,  Christophe Detavernier ,  Christian Lavoie ,  Kenneth P. Rodbell

IPC分类号： H01L21/44

CPC分类号： H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

摘要翻译： 提供了一种用于形成稳定的金属硅化物膜的方法，例如接触（源极/漏极或栅极），其在随后的热处理期间基本上不附聚。 在本发明中，在形成金属硅化物之前，将能够附着到含Si层内的缺陷的离子注入到含Si层中。 植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

公开(公告)号：US20060121662A1

公开(公告)日：2006-06-08

申请号：US10904884

申请日：2004-12-02

申请人： Sunfei Fang ,  Cyril Cabral ,  Chester Dziobkowski ,  John Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James Nakos ,  An Steegen ,  Clement Wann

发明人： Sunfei Fang ,  Cyril Cabral ,  Chester Dziobkowski ,  John Ellis-Monaghan ,  Christian Lavoie ,  Zhijiong Luo ,  James Nakos ,  An Steegen ,  Clement Wann

IPC分类号： H01L21/8238 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/823814 ,  H01L21/823835

摘要： A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.

公开(公告)号：US20050255699A1

公开(公告)日：2005-11-17

申请号：US10709534

申请日：2004-05-12

申请人： Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun-Yu Wang ,  Keith Wong

发明人： Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun-Yu Wang ,  Keith Wong

IPC分类号： H01L21/20 ,  H01L21/285 ,  H01L21/336 ,  H01L21/44 ,  H01L21/4763 ,  H01L29/78

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L29/7833

摘要： A method for forming a metal suicide contact for a semiconductor device includes forming a refractory metal layer over a substrate, including active and non-active area of said substrate, and forming a cap layer over the refractory metal layer. A counter tensile layer is formed over the cap layer, wherein the counter tensile layer is selected from a material such that an opposing directional stress is created between the counter tensile layer and the cap layer, with respect to a directional stress created between the refractory metal layer and the cap layer.

摘要翻译： 用于形成用于半导体器件的金属硅化物接触的方法包括在包括所述衬底的有源和非有源区域的衬底上形成难熔金属层，并在难熔金属层上形成覆盖层。 反面拉伸层形成在覆盖层上方，其中相对抗拉层选自材料，使得在相对拉伸层和盖层之间产生相对的方向应力，相对于难熔金属之间产生的方向应力 层和盖层。

公开(公告)号：US20050110142A1

公开(公告)日：2005-05-26

申请号：US10722934

申请日：2003-11-26

申请人： Michael Lane ,  Christian Lavoie ,  Sandra Malhotra ,  Fenton McFeely ,  John Yurkas

发明人： Michael Lane ,  Christian Lavoie ,  Sandra Malhotra ,  Fenton McFeely ,  John Yurkas

IPC分类号： H01L21/285 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： A solid state device includes a first material and a second material. A barrier layer is formed between the first material and the second material to prevent diffusion between the first material and the second material. The barrier layer includes a metal form of at least one of Ru and Re. The barrier layer is preferably formed using a low temperature deposition process, where the substrate is less than 400 degrees C.

摘要翻译： 固体装置包括第一材料和第二材料。 在第一材料和第二材料之间形成阻挡层以防止第一材料和第二材料之间的扩散。 阻挡层包括Ru和Re中的至少一种的金属形式。 阻挡层优选使用低温沉积工艺形成，其中衬底小于400℃。

公开(公告)号：US06878624B1

公开(公告)日：2005-04-12

申请号：US10674645

申请日：2003-09-30

申请人： John Bruley ,  Cyril Cabral, Jr. ,  Christian Lavoie ,  Tina J. Wagner ,  Yun Yu Wang ,  Horati S. Wildman ,  Wong Kwong Hon

发明人： John Bruley ,  Cyril Cabral, Jr. ,  Christian Lavoie ,  Tina J. Wagner ,  Yun Yu Wang ,  Horati S. Wildman ,  Wong Kwong Hon

IPC分类号： H01L21/336 ,  H01L21/44 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76855 ,  H01L21/76856 ,  H01L29/665

摘要： The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 nm.

摘要翻译： 本发明提供一种用于形成具有TiN扩散阻挡层的钴或镍硅化物的互连的方法。 本发明的方法包括提供具有通孔的初始结构，以暴露出位于基板上的硅化物区域; 在含氮环境中退火初始结构，其中在暴露的硅化物区域上形成氮钝化层; 在氮钝化层顶上沉积Ti; 在含氮环境中退火Ti以在TiN扩散层和钴或镍硅化物之间形成TiN扩散阻挡层和非晶Ti钴硅化物，并在通孔内和TiN扩散势垒顶上沉积互连金属。 氮钝化层基本上限制了Ti和硅化物层之间的扩散，使形成的无定形Ti钴硅化物层最小化。 因此，非晶Ti钴或Ti镍硅化物被限制在小于约3.0nm的厚度。

公开(公告)号：US20050070098A1

公开(公告)日：2005-03-31

申请号：US10674645

申请日：2003-09-30

申请人： John Bruley ,  Cyril Cabral ,  Christian Lavoie ,  Tina Wagner ,  Yun Wang ,  Horatl Wlldman ,  Wong Hon

发明人： John Bruley ,  Cyril Cabral ,  Christian Lavoie ,  Tina Wagner ,  Yun Wang ,  Horatl Wlldman ,  Wong Hon

IPC分类号： H01L21/336 ,  H01L21/44 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76855 ,  H01L21/76856 ,  H01L29/665

摘要： The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 nm.

摘要翻译： 本发明提供一种用于形成具有TiN扩散阻挡层的钴或镍硅化物的互连的方法。 本发明的方法包括提供具有通孔的初始结构，以暴露出位于基板上的硅化物区域; 在含氮环境中退火初始结构，其中在暴露的硅化物区域上形成氮钝化层; 在氮钝化层顶上沉积Ti; 在含氮环境中退火Ti以在TiN扩散层和钴或镍硅化物之间形成TiN扩散阻挡层和非晶Ti钴硅化物，并在通孔内和TiN扩散势垒顶上沉积互连金属。 氮钝化层基本上限制了Ti和硅化物层之间的扩散，使形成的无定形Ti钴硅化物层最小化。 因此，非晶Ti钴或Ti镍硅化物被限制在小于约3.0nm的厚度。

公开(公告)号：US06777298B2

公开(公告)日：2004-08-17

申请号：US10172649

申请日：2002-06-14

申请人： Ronnen A. Roy ,  Cyril Cabral, Jr. ,  Christian Lavoie ,  Kam-Leung Lee

发明人： Ronnen A. Roy ,  Cyril Cabral, Jr. ,  Christian Lavoie ,  Kam-Leung Lee

IPC分类号： H01L21336

CPC分类号： H01L29/66492 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/28035 ,  H01L21/28114 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/324 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  Y10S438/924

摘要： In one embodiment of the invention, source and drain regions are formed as well as source and drain contact regions. Thereafter source and drain extension regions are formed. In another embodiment, elevated source and drain regions are formed as well as source and drain extension regions. Thereafter source and drain contact regions are formed at a temperature up to about 600° C. and an annealing time of up to about one minute.

摘要翻译： 在本发明的一个实施例中，形成源极和漏极区以及源极和漏极接触区域。 此后形成源极和漏极延伸区域。 在另一个实施例中，形成升高的源极和漏极区以及源极和漏极延伸区。 此后，源极和漏极接触区域形成在高达约600℃的温度和高达约1分钟的退火时间。