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公开(公告)号：US20090080109A1
公开(公告)日：2009-03-26
申请号：US12213417
申请日：2008-06-19
申请人： Hideaki Fukuzawa , Hiromi Yuasa
发明人： Hideaki Fukuzawa , Hiromi Yuasa
CPC分类号： G11B5/66 , B82Y10/00 , G11B5/02 , G11B5/314 , G11B5/3983 , G11B5/743 , G11B5/746 , G11B5/82 , G11B2005/0002 , G11B2005/0024
摘要： A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers.
摘要翻译： 磁记录装置包括：包含多个记录层的磁记录介质; 用于在磁记录介质中进行信息磁写入的磁记录头; 以及磁记录头，用于从磁记录介质的信息中进行磁读出; 其特征在于，所述磁记录头包括用于磁辅助所述信息的磁写入的高频振荡器，以便改变所述磁记录介质的所述多个记录层中的至少一个的磁化，从而记录与所述磁记录介质不同的多个信息 磁记录介质中的另一个与多个记录层的总磁化量相称。
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82.发明授权公开(公告)号：US07471492B2
公开(公告)日：2008-12-30
申请号：US10895844
申请日：2004-07-22
IPC分类号： G11B5/127
CPC分类号： H01F10/324 , B82Y25/00 , G11B5/3906 , H01F10/3259 , H01F10/3268
摘要： A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose direction is substantially pinned, and a non-magnetic conductive layer formed in contact with the first magnetic layer and the second magnetic layer and electrically connecting the first and second magnetic layers, the non-magnetic conductive layer forming a path of spin-polarized electrons from one of the magnetic layer to the other magnetic layer, the non-magnetic conductive layer comprising a portion located between the first magnetic layer and the second magnetic layer, the portion being a sensing area.
摘要翻译： 磁阻元件具有彼此分离的第一磁性层和第二磁性层，第一磁性层和第二磁性层各自具有方向基本上被钉扎的磁化，以及形成为与第一磁性层接触的非磁性导电层 磁性层和第二磁性层，并且电连接第一和第二磁性层，非磁性导电层形成自旋极化电子的路径从一个磁性层到另一个磁性层，非磁性导电层包括 位于第一磁性层和第二磁性层之间的部分，该部分是感测区域。
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83.发明授权公开(公告)号：US07289305B2
公开(公告)日：2007-10-30
申请号：US11074643
申请日：2005-03-09
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/325
摘要： A magnetoresistive element has a magnetization pinned layer, a nonmagnetic spacer layer including a stack of a nonmagnetic metal layer, a resistance increasing layer and another nonmagnetic metal layer, a magnetization free layer having an fcc crystal structure, a cap layer having an fcc, an hcp, or a bcc crystal structure and having an interatomic distance between nearest neighbors greater than that of the magnetization free layer, and a pair of electrodes configured to provide a sense current in a direction substantially perpendicular to planes of the magnetization pinned layer, the nonmagnetic spacer layer, and the magnetization free layer.
摘要翻译： 磁阻元件具有磁化固定层，包括非磁性金属层的堆叠的非磁性间隔层，电阻增加层和另一非磁性金属层，具有fcc晶体结构的无磁化层，具有fcc的盖层， hcp或bcc晶体结构，并且具有大于无磁化层的最近相邻物体之间的原子间距离;以及一对电极，被配置为在基本垂直于磁化钉扎层的平面的方向上提供感测电流，非磁性 间隔层和无磁化层。
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84.发明授权公开(公告)号：US06754053B2
公开(公告)日：2004-06-22
申请号：US10108472
申请日：2002-03-29
申请人： Masatoshi Yoshikawa , Masashi Sahashi , Katsuhiko Koi , Hitoshi Iwasaki , Hiromi Yuasa , Hideaki Fukuzawa
发明人： Masatoshi Yoshikawa , Masashi Sahashi , Katsuhiko Koi , Hitoshi Iwasaki , Hiromi Yuasa , Hideaki Fukuzawa
IPC分类号： G11B5127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3143 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F41/325
摘要： A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the magnetically pinned layer and the non-magnetic intermediate layer. The sidewall layers are made of a high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a specular reflection effect against conduction electrons, thereby to prevent non-elastic scattering of electrons and missing of spin information on side surfaces of the magnetoresistance effect film.
摘要翻译： 包括磁性钉扎层，非磁性中间层和无磁性层的磁阻效应膜具有覆盖磁性被钉扎层和非磁性中间层的至少侧面的侧壁层。 侧壁层由具有对传导电子的镜面反射效应的高电阻氧化物，氮化物，氟化物，硼化物，硫化物或碳化物制成，从而防止电子的非弹性散射和在磁阻的侧表面上缺少自旋信息 效果片。
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85.发明授权公开(公告)号：US07593195B2
公开(公告)日：2009-09-22
申请号：US11609557
申请日：2006-12-12
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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86.发明授权High-frequency oscillator with a stacked film including a magnetization pinned layer 有权具有堆叠薄膜的高频振荡器包括磁化固定层公开(公告)号：US07504898B2
公开(公告)日：2009-03-17
申请号：US11524238
申请日：2006-09-21
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
CPC分类号： H03B15/006 , B82Y25/00 , G01S7/006 , G01S7/35 , G01S13/345 , G01S2013/936 , H01F10/3259 , H01F10/329 , Y10T428/24942
摘要： A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation layer formed of a magnetic material which generates a high-frequency oscillation phenomenon when a current is supplied, an intermediate layer provided between the magnetization pinned layer and the oscillation layer, the intermediate layer having an insulation layer and current paths which pass through the insulation layer in a thickness direction, and a pair of electrodes which supply a current perpendicularly to a plane of a stacked film including the magnetization pinned layer, the intermediate layer and the oscillation layer.
摘要翻译： 高频振荡器包括：高频振荡元件，具有磁化被钉扎层，其磁化方向基本上被固定在一个方向上;振动层，其由在供应电流时产生高频振荡现象的磁性材料形成， 中间层设置在磁化被钉扎层和振荡层之间，中间层具有绝缘层和沿厚度方向穿过绝缘层的电流路径，以及一对电极，其垂直于堆叠的平面提供电流 膜包括磁化固定层，中间层和振荡层。
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87.发明申请Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory 失效磁阻效应元件，磁头，磁记录装置和磁存储器公开(公告)号：US20080239587A1
公开(公告)日：2008-10-02
申请号：US12073491
申请日：2008-03-06
申请人： Junichi Ito , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiro Fuji
发明人： Junichi Ito , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiro Fuji
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3932 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer.
摘要翻译： 磁阻效应元件包括：在一个方向上固定第一磁化的第一磁性层; 第二磁性层，其在一个方向上固定第二磁化强度; 位于第一磁性层和第二磁性层之间并由选自氧化物，氮化物，氧氮化物和金属中的至少一种构成的间隔层; 以及电位偏置产生部分，其位于与间隔层相邻的位置，用于向间隔层施加偏置磁场。
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88.发明授权公开(公告)号：US07301733B1
公开(公告)日：2007-11-27
申请号：US10400690
申请日：2003-03-28
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/398 , G11B5/3983 , G11C11/16 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3281 , H01F41/303 , H01F41/325 , H01L27/224 , H01L27/228 , Y10T428/1121
摘要： A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of oxide, nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film.
摘要翻译： 磁阻效应元件包括磁阻效应膜和一对电极。 具有第一磁性层的磁阻效应膜，其磁化方向基本上在一个方向上被固定; 其磁化方向响应于外部磁场而变化的第二磁性层; 位于第一和第二磁性层之间的非磁性中间层; 以及设置在所述第一磁性层中，在所述第二磁性层中，在所述第一磁性层和所述非磁性中间层之间的界面处和/或在所述第二磁性层和所述非磁性中间层之间的界面处设置的膜，所述膜具有 厚度不大于3纳米，该膜具有选自氧化物，氮化物，氮氧化物，磷化物和氟化物中的至少一种。 一对电极电连接到磁阻效应膜，以提供垂直于所述磁阻效应膜的膜平面的感测电流。
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89.发明申请公开(公告)号：US20060023372A1
公开(公告)日：2006-02-02
申请号：US11190886
申请日：2005-07-28
申请人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
发明人： Hideaki Fukuzawa , Hiromi Yuasa , Hitoshi Iwasaki
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.
摘要翻译： 磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及 电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。 在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。
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公开(公告)号：US08274052B1
公开(公告)日：2012-09-25
申请号：US13430326
申请日：2012-03-26
申请人： Hideaki Fukuzawa , Hiromi Yuasa
发明人： Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： G01J5/02
CPC分类号： G01N21/3581 , G01N21/3577
摘要： In a specimen identification system, an oscillator directs a THz wave toward a channel that accommodates a specimen. A receiver detects the THz wave transmitted through the specimen. A first controller controls the oscillator to sweep the oscillation frequency of the THz wave within a frequency band. A receiver generates a receiving signal by sweeping the receiving frequency of the THz wave within the frequency band. A specimen identification unit specifies the specimen based on the waveform of the receiving signal within the frequency band.
摘要翻译： 在样本识别系统中，振荡器将THz波导向容纳样本的通道。 接收器检测通过样品传输的太赫兹波。 第一控制器控制振荡器扫描频带内的太赫兹波的振荡频率。 接收机通过扫描频带内的THz波的接收频率来产生接收信号。 样本识别单元基于频带内的接收信号的波形来指定样本。
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