公开(公告)号：US06551446B1

公开(公告)日：2003-04-22

申请号：US09637174

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

发明人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC分类号： C23C1600

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.

摘要翻译： 用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室， 室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。 气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。 增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。 适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。

公开(公告)号：US06453842B1

公开(公告)日：2002-09-24

申请号：US09636700

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

发明人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC分类号： C23C1600

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.

摘要翻译： 限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布 板和基板支撑件，其间限定了其间的基板加工区域，中空折痕导管，其相应的端部通向气体分配板的相对侧上的基板处理区域，所述导管的内部共享内部环境。 导管适于接受管道内的处理气体的照射，以在围绕导管内部延伸并且在腔室内部环境内的衬底处理区域上延伸的路径中维持等离子体。

公开(公告)号：US06410449B1

公开(公告)日：2002-06-25

申请号：US09636436

申请日：2000-08-11

申请人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

发明人： Hiroji Hanawa ,  Yan Ye ,  Kenneth S Collins ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Tsutomu Tanaka

IPC分类号： H01L21302

CPC分类号： H01J37/321 ,  H01J37/32082

摘要： A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece, maintaining a plasma current in the torroidal path by applying RF power to a portion of the torroidal path away from the surface of the workpiece, and increasing the ion density of the plasma current in the vicinity of the workpiece by constricting the area of a portion of the torroidal path overlying the workpiece.

摘要翻译： 在等离子体反应器中处理工件的方法包括建立用于等离子体电流的环形路径，其流过靠近和横向于所述工件的表面的流动，通过将RF功率施加到环形路径的一部分来维持在环形路径中的等离子体电流 环形路径远离工件的表面，并且通过收缩覆盖工件的一部分环形路径的面积来增加工件附近的等离子体电流的离子密度。

公开(公告)号：US20170352568A1

公开(公告)日：2017-12-07

申请号：US15383124

申请日：2016-12-19

申请人： Jaeyong Cho ,  Haitao Wang ,  Vijay D. Parkhe ,  Kartik Ramaswamy ,  Chunlei Zhang

发明人： Jaeyong Cho ,  Haitao Wang ,  Vijay D. Parkhe ,  Kartik Ramaswamy ,  Chunlei Zhang

IPC分类号： H01L21/683 ,  H01J37/32

摘要： An electrostatic chuck is described to carry a workpiece for processing such as high power plasma processing. In embodiments, the chuck includes a top plate to carry the workpiece, the top plate having an electrode to grip the workpiece, a cooling plate under the top plate to cool the top plate, a gas hole through the cooling plate and the top plate to feed a gas to the workpiece through the top plate, and an aperture-reducing plug in the cooling plate gas hole to conduct gas flow through the hole.

公开(公告)号：US08920597B2

公开(公告)日：2014-12-30

申请号：US13047052

申请日：2011-03-14

申请人： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

发明人： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC分类号： H01L21/00 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

摘要翻译： 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：US08878926B2

公开(公告)日：2014-11-04

申请号：US13236039

申请日：2011-09-19

申请人： Zheng John Ye ,  Kartik Ramaswamy ,  Troy S. Detrick ,  Kenneth S. Collins

发明人： Zheng John Ye ,  Kartik Ramaswamy ,  Troy S. Detrick ,  Kenneth S. Collins

IPC分类号： G01N25/72

CPC分类号： G01N25/72

摘要： Embodiments of the present invention provide methods and apparatus for analyzing thermal properties of bonding materials within a composite structure. One embodiment of the present invention provides an apparatus for analyzing thermal property of a bonding material within a structure. The apparatus comprises a structure support having a supporting surface configured to support the structure, a heat source configured to direct a heat flux to the structure supported by the supporting surface of the structure support, and a camera facing the structure supported on the structure support and configured to capture thermal images of the structure supported on the structure support.

摘要翻译： 本发明的实施例提供了用于分析复合结构内的接合材料的热性能的方法和装置。 本发明的一个实施例提供一种用于分析结构内的接合材料的热性能的装置。 该装置包括：结构支撑件，其具有构造成支撑该结构的支撑表面;热源，其构造成将热通量引导到由结构支撑件的支撑表面支撑的结构;以及面向支撑在结构支撑上的结构的照相机， 被配置为捕获支持在结构支撑上的结构的热图像。

公开(公告)号：US08709706B2

公开(公告)日：2014-04-29

申请号：US13455784

申请日：2012-04-25

申请人： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

发明人： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

IPC分类号： G03F7/26

CPC分类号： G03F7/36 ,  G03F7/40

摘要： The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

摘要翻译： 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。

公开(公告)号：US08513939B2

公开(公告)日：2013-08-20

申请号：US13052280

申请日：2011-03-21

申请人： Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

发明人： Hiroji Hanawa ,  Satoru Kobayashi ,  Kartik Ramaswamy ,  Shahid Rauf

IPC分类号： G01R31/02 ,  G01R27/08

CPC分类号： G01R27/32 ,  G01R19/0061 ,  H05H1/0081

摘要： An RF voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement.

摘要翻译： RF电压探头适于具有长同轴电缆，以允许测量设备远离探头连接，而不会使电压测量失真。

公开(公告)号：US08513889B2

公开(公告)日：2013-08-20

申请号：US12899048

申请日：2010-10-06

申请人： Chunlei Zhang ,  Sergio F. Shoji ,  Andrey Semenin ,  Kartik Ramaswamy ,  James P. Cruse ,  Bryan Liao

发明人： Chunlei Zhang ,  Sergio F. Shoji ,  Andrey Semenin ,  Kartik Ramaswamy ,  James P. Cruse ,  Bryan Liao

IPC分类号： H03H7/38

CPC分类号： H03H7/40 ,  H01J37/32183 ,  H01J37/32935 ,  H05H1/46

摘要： Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.

摘要翻译： 本文提供了用于调整匹配网络的方法和装置。 调整匹配网络的方法包括提供将RF源耦合到负载的匹配网络，所述匹配网络具有设置在第一设定点处的可调谐元件; 通过在第一设定点之上的第一步增加可调元件的值; 感测反射RF功率的第一调整值; 将可调谐元件的值降低到低于第一设定点的第一步; 感测反射RF功率的第二调整值; 比较反射RF功率的第一和第二调整值; 以及将所述可调元件移动到对应于具有所述反射RF功率的最低调整值的位置的第二设定点。 可以重复该方法，直到反射的RF功率落在可接受的反射RF功率范围内。

公开(公告)号：US08313664B2

公开(公告)日：2012-11-20

申请号：US12623243

申请日：2009-11-20

申请人： Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

发明人： Zhigang Chen ,  Shahid Rauf ,  Walter R. Merry ,  Leonid Dorf ,  Kartik Ramaswamy ,  Kenneth S. Collins

IPC分类号： G01L21/30

CPC分类号： H01J37/32165 ,  H01J37/32082 ,  H01J37/3299 ,  H01L21/6833

摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.

摘要翻译： 在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压 。