公开(公告)号：US06607674B2

公开(公告)日：2003-08-19

申请号：US09726459

申请日：2000-11-30

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: B81B702

CPC classification number: C03C17/3649 ,  C03C17/3435 ,  C03C17/36 ,  C03C17/3665 ,  C03C2218/33 ,  G03F1/32 ,  G03F1/72

Abstract: A phase shifting mask repair process is described. The process uses an etching gas or a hydrofluoric acid solution to etch the quartz substrate and the characteristics of the phase shifter layer being only slightly etched when clean with a NH3/H2O2/H2O2 solution to calculate and adjust the respective processing time accordingly. As a result, the phase difference between the quartz substrate and the MoSiON phase shifter layer stays relatively the same before and after the repair process.

公开(公告)号：US06569761B2

公开(公告)日：2003-05-27

申请号：US09903667

申请日：2001-07-13

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L214763

CPC classification number: H01L21/0337 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0338 ,  H01L21/76816

Abstract: In accordance with the present invention, a method is provided for shrinking critical dimension in semiconductor processes. This method comprises a step of performing an over-exposure process to a photosensitive layer to form a patterned photosensitive layer on a substrate by using a patterned reticle. Due to the unexposed region of the photosensitive layer being diminished by over-exposure the critical dimension is shrunk. Then, a sacrificial layer is applied for the purpose of pattern reverse-transferring. Next, the patterned photosensitive layer is removed such that the pattern is transferred to the sacrificial layer with a shrunk critical dimension. In cooperation of the present exposure technology with the present invention, the shrinkage of a critical dimension is accomplished, for example, using an I-line exposure light source in a critical dimension of 0.25 &mgr;m process, or using a deep UV (ultraviolet) exposure light source in a critical dimension of 0.13 &mgr;m process.

公开(公告)号：US06562691B2

公开(公告)日：2003-05-13

申请号：US09799003

申请日：2001-03-06

Applicant: Ching-Yu Chang ,  Wei-Hwa Sheu

Inventor： Ching-Yu Chang ,  Wei-Hwa Sheu

IPC: H01L2176

CPC classification number: G03F9/708 ,  G03F9/7084 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A method for forming a protrusive alignment-mark in semiconductor devices is disclosed. A photolithography process is performed to form a photoresist layer on a substrate wherein the substrate has an element region and an alignment region, and the photoresist layer has an element photoresist region and an alignment photoresist region. Afterwards, a first dielectric layer is deposited on the element photoresist region and the alignment photoresist region. The excess portion of first dielectric layer above the photoresist layer is removed such that the photoresist layer is coplanar with the first dielectric layer and thus the photoresist layer is exposed. The photoresist layer on the element region and said alignment region is stripped to form a protrusive alignment-mark on the alignment region.

公开(公告)号：US06448605B1

公开(公告)日：2002-09-10

申请号：US09924904

申请日：2001-08-08

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L2976

CPC classification number: H01L28/92 ,  H01L21/28273 ,  H01L21/32139 ,  H01L29/66545

Abstract: A method of fabricating a gate is described. A first dielectric layer having a first opening is formed on a substrate. A gate dielectric layer is formed in the opening. A lower portion of a floating gate is formed on the gate dielectric layer. A source/drain region is formed in the substrate beside the lower portion of the floating gate. A conductive layer is formed on the first dielectric layer to completely fill the first opening. The conductive layer is patterned to form a second opening in the conductive layer. The second opening is above the first opening and does not expose the first dielectric layer. The second opening has a tapered sidewall and a predetermined depth. A mask layer is formed to cover the conductive layer and fill the second opening. The mask layer outside the second opening is removed to expose the conductive layer. A portion of the mask layer is removed to leave a first etching mask layer in the second opening. An anisotropic etching process using the first etching mask layer as a mask is performed to etch the conductive layer. An upper portion of the floating gate is formed. The first dielectric layer is exposed. The first etching mask is removed. Thereafter, a dielectric layer between gates and a control gate is formed over the floating gate.

公开(公告)号：US09851636B2

公开(公告)日：2017-12-26

申请号：US13542160

申请日：2012-07-05

Applicant: Chen-Yu Liu ,  Ching-Yu Chang

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/016 ,  G03F7/038 ,  G03F7/039

CPC classification number: G03F7/0045 ,  G03F7/0163 ,  G03F7/0382 ,  G03F7/0392

Abstract: A photosensitive material and methods of making a pattern on a substrate are disclosed. The photosensitive material includes a polymer that turns soluble to a developer solution after a chemically amplified reaction, and at least one chemical complex having a single diffusion length. The material includes at least one photo-acid generator (PAG) linked to at least one photo decomposable base (PDB) or quencher.

公开(公告)号：US09261786B2

公开(公告)日：2016-02-16

申请号：US13437674

申请日：2012-04-02

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00 ,  G03F7/039 ,  G03F7/20 ,  G03F7/26 ,  G03F7/32

CPC classification number: G03F7/0397 ,  G03F7/2041 ,  G03F7/26 ,  G03F7/325

Abstract: Methods and materials directed to solubility of photosensitive material in negative tone developer are described. The photosensitive material may include greater than 50% acid labile groups as branches to a polymer chain. In another embodiment, a photosensitive material, after exposure or irradiation, is treated. Exemplary treatments include applying a base to the photosensitive material.

Abstract translation: 描述了涉及感光材料在负色调显影剂中的溶解度的方法和材料。 感光材料可以包括大于50％的酸不稳定基团作为聚合物链的分支。 在另一个实施方案中，在曝光或照射之后对感光材料进行处理。 示例性的处理包括将基底施加到感光材料上。

公开(公告)号：US08956806B2

公开(公告)日：2015-02-17

申请号：US12562761

申请日：2009-09-18

Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer.

Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分。

公开(公告)号：US08741551B2

公开(公告)日：2014-06-03

申请号：US13442687

申请日：2012-04-09

Applicant: Chen-Hau Wu ,  Ching-Yu Chang

Inventor： Chen-Hau Wu ,  Ching-Yu Chang

IPC: G03F7/26

CPC classification number: G03F7/095 ,  G03F7/0045 ,  G03F7/0392

Abstract: The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.

Abstract translation: 本公开提供敏感材料。 敏感材料包括响应于与酸的反应而将可溶于碱溶液的聚合物; 响应于辐射能分解形成底座的多个光源发生器（PBG）; 以及响应于热能产生酸的热敏组分。

公开(公告)号：US08564759B2

公开(公告)日：2013-10-22

申请号：US11697469

申请日：2007-04-06

Applicant: Ching-Yu Chang ,  Burn Jeng Lin

Inventor： Ching-Yu Chang ,  Burn Jeng Lin

IPC: G03B27/42

CPC classification number: B08B3/12 ,  G03F7/2041 ,  G03F7/70341 ,  G03F7/70925

Abstract: A lithography apparatus includes an imaging lens module, a substrate table positioned underlying the imaging lens module and configured to hold a substrate, and a cleaning module adapted to clean the lithography apparatus. The cleaning module comprises one inlet and one outlet for providing a cleaning fluid to and from a portion of the lithography apparatus to be cleaned, and an ultrasonic unit configured to provide ultrasonic energy to the cleaning fluid.

Abstract translation: 光刻设备包括成像透镜模块，位于成像透镜模块下方并构造成保持基板的基板台，以及适于清洁光刻设备的清洁模块。 清洁模块包括一个入口和一个出口，用于向待清洁的光刻设备的一部分提供清洁流体;以及超声波单元，被配置为向清洁流体提供超声波能量。

公开(公告)号：US20130210232A1

公开(公告)日：2013-08-15

申请号：US13369818

申请日：2012-02-09

Applicant: Ho Wei De ,  Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

Inventor： Ho Wei De ,  Kuei-Liang Lu ,  Ming-Feng Shieh ,  Ching-Yu Chang

IPC: H01L21/311 ,  C23C16/04 ,  B44C1/22

CPC classification number: G03F1/38 ,  G03F7/70466 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/845 ,  H01L27/1211

Abstract: A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer.

Abstract translation: 用于图案化非矩形图案中的多个特征的方法，例如在集成电路器件上，包括提供包括具有多个细长突起的表面的基底，所述细长突起沿第一方向延伸。 第一层形成在多个细长突起的表面上方和上方，并用端部切割掩模图案化。 末端切割掩模包括两个几乎相邻的图案，其具有定位和配置的次分辨率特征，使得当第一层上的所得图案包括两个近似相邻的图案时，以及其间的连接。 该方法还包括使用第一层上的图案切割细长突起的端部。