公开(公告)号：US20060037932A1

公开(公告)日：2006-02-23

申请号：US10529425

申请日：2003-02-27

Applicant: Gerhard Lammel ,  Frank Schaefer ,  Heribert Weber ,  Stefan Finkbeiner

Inventor： Gerhard Lammel ,  Frank Schaefer ,  Heribert Weber ,  Stefan Finkbeiner

IPC: C23F1/00

CPC classification number: B81C1/00476 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0115

Abstract: A manufacturing method and a micromechanical component are provided in which porous silicon is used as sacrificial layer and a functional layer is exposed by etching off the sacrificial layer.

Abstract translation: 提供了制造方法和微机械部件，其中使用多孔硅作为牺牲层，并且通过蚀刻除去牺牲层而暴露功能层。

公开(公告)号：US06820481B1

公开(公告)日：2004-11-23

申请号：US09699704

申请日：2000-10-30

Applicant: Heribert Weber ,  Werner Steiner

Inventor： Heribert Weber ,  Werner Steiner

IPC: G01F168

CPC classification number: G01F1/6845

Abstract: A mass flow sensor is described. To improve the membrane stability of the known mass flow sensor, in particular the reoxide layer which is present in the known mass flow sensor is replaced by a thicker PECVD silicon oxide layer. The thickness of the silicon oxide layer deposited on the platinum layer is increased, and the known mass flow sensor is also provided with a cover layer of PECVD silicon nitride forming a moisture barrier.

Abstract translation: 描述质量流量传感器。 为了改善已知质量流量传感器的膜稳定性，特别是存在于已知质量流量传感器中的再氧化物层被更厚的PECVD氧化硅层代替。 沉积在铂层上的氧化硅层的厚度增加，并且已知的质量流量传感器还设置有形成防潮层的PECVD氮化硅覆盖层。

公开(公告)号：US06303990B1

公开(公告)日：2001-10-16

申请号：US09320603

申请日：1999-05-26

Applicant: Heribert Weber

Inventor： Heribert Weber

IPC: H01L2348

CPC classification number: H01L21/76838 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A conductor path contacting arrangement for contacting a first conductor path, which is applied on a substrate and covered with a first insulating layer, via a contact hole in the first insulating layer to a second conductor path. The contact hole overlies a region above the first conductor and a region, adjacent thereto, above the substrate; and inside the contact hole the second conductor path is stepped down from the contact region having the first conductor path toward the substrate therebeneath. This allows better control of the contact hole junction resistance.

Abstract translation: 一种导体路径接触装置，其用于接触第一导体路径，该第一导体路径经由第一绝缘层中的接触孔施加到衬底并被第一绝缘层覆盖，以覆盖到第二导体路径。 接触孔覆盖在第一导体上方的区域和与其相邻的区域，在衬底上方; 并且在所述接触孔内部，所述第二导体路径从具有所述第一导体路径的所述接触区域朝向其下方的衬底降压。 这允许更好地控制接触孔结电阻。

公开(公告)号：US09791663B2

公开(公告)日：2017-10-17

申请号：US13976301

申请日：2011-11-09

Applicant: Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Michael Krueger ,  Joerg Muchow ,  Christoph Friese

Inventor： Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Michael Krueger ,  Joerg Muchow ,  Christoph Friese

IPC: G02B26/08 ,  G02B26/10 ,  G02B26/12 ,  G02B7/182

CPC classification number: G02B7/1821 ,  G02B26/085 ,  G02B26/101 ,  G02B26/105 ,  G02B26/12

Abstract: A magnetically drivable micromirror having an outer frame, a coil former, and torsion springs, situated in a first plane, the torsion springs having an axis of rotation, and the coil former being connected to the outer frame by the torsion springs so as to be capable of rotational motion about the axis of rotation, having a mirror element that is situated in a second plane parallel to the first plane, the mirror element being connected to the coil former by an intermediate layer. A 2D scanner having a first magnetically drivable micromirror and a second drivable mirror, and to a method for producing a micromirror are also described.

公开(公告)号：US09266720B2

公开(公告)日：2016-02-23

申请号：US14059202

申请日：2013-10-21

Applicant: Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner ,  Mirko Hattass ,  Daniel Christoph Meisel

Inventor： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner ,  Mirko Hattass ,  Daniel Christoph Meisel

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81C1/0023 ,  B81C2203/075 ,  B81C2203/0771 ,  H01L2224/48463

Abstract: A component has at least one MEMS element and at least one cap made of a semiconductor material. The cap, in addition to its mechanical function as a terminus of a cavity and protection of the micromechanical structure, is provided with an electrical functionality. The micromechanical structure of the MEMS element of the component is situated in a cavity between a carrier and the cap, and includes at least one structural element which is deflectable out of the component plane within the cavity. The cap includes at least one section extending over the entire thickness of the cap, which is electrically insulated from the adjoining semiconductor material in such a way that it may be electrically contacted independently from the remaining sections of the cap.

Abstract translation: 元件具有至少一个MEMS元件和由半导体材料制成的至少一个盖。 盖子除了作为空腔的终端的机械功能以及微机械结构的保护之外，还具有电功能。 元件的MEMS元件的微机械结构位于载体和盖之间的空腔中，并且包括至少一个结构元件，其可在空腔内偏离组件平面。 该帽包括至少一个在盖的整个厚度上延伸的部分，其与相邻的半导体材料电绝缘，使得其可以独立于帽的其余部分电接触。

公开(公告)号：US09040336B2

公开(公告)日：2015-05-26

申请号：US14058806

申请日：2013-10-21

Applicant: Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

Inventor： Johannes Classen ,  Axel Franke ,  Jens Frey ,  Heribert Weber ,  Frank Fischer ,  Patrick Wellner

IPC: H01L21/00 ,  B81C1/00 ,  B81B3/00 ,  B81B7/00

CPC classification number: B81C1/00015 ,  B81B3/0018 ,  B81B7/0058

Abstract: A manufacturing method for a cap, for a hybrid vertically integrated component having a MEMS component a relatively large cavern volume having a low cavern internal pressure, and a reliable overload protection for the micromechanical structure of the MEMS component. A cap structure is produced in a flat cap substrate in a multistep anisotropic etching, and includes at least one mounting frame having at least one mounting surface and a stop structure, on the cap inner side, having at least one stop surface, the surface of the cap substrate being masked for the multistep anisotropic etching with at least two masking layers made of different materials, and the layouts of the masking layers and the number and duration of the etching steps being selected so that the mounting surface, the stop surface, and the cap inner side are situated at different surface levels of the cap structure.

Abstract translation: 一种用于具有MEMS部件的混合垂直集成部件的盖的制造方法，具有较低的洞穴内部压力的相对较大的洞穴体积以及用于MEMS部件的微机械结构的可靠的过载保护。 在多步骤各向异性蚀刻中，在平盖基板中制造盖结构，并且包括至少一个安装框架，该安装框架具有至少一个安装表面和止动结构，在盖内侧具有至少一个止动表面， 掩模基板被掩模用于具有由不同材料制成的至少两个掩模层的多步各向异性蚀刻，并且选择掩模层的布局以及蚀刻步骤的数量和持续时间，使得安装表面，止动表面和 帽内侧位于帽结构的不同表面水平处。

公开(公告)号：US08847336B2

公开(公告)日：2014-09-30

申请号：US12937093

申请日：2008-11-28

Applicant: Tjalf Pirk ,  Stefan Pinter ,  Hubert Benzel ,  Heribert Weber ,  Michael Krueger ,  Robert Sattler ,  Frederic Njikam Njimonzie ,  Joerg Muchow ,  Joachim Fritz ,  Christoph Schelling ,  Christoph Friese

Inventor： Tjalf Pirk ,  Stefan Pinter ,  Hubert Benzel ,  Heribert Weber ,  Michael Krueger ,  Robert Sattler ,  Frederic Njikam Njimonzie ,  Joerg Muchow ,  Joachim Fritz ,  Christoph Schelling ,  Christoph Friese

IPC: H01L29/788 ,  B81C1/00

CPC classification number: B81C1/00103 ,  B81B2203/0118 ,  B81B2203/0307

Abstract: In a micromechanical component having an inclined structure and a corresponding manufacturing method, the component includes a substrate having a surface; a first anchor, which is provided on the surface of the substrate and which extends away from the substrate; and at least one cantilever, which is provided on a lateral surface of the anchor, and which points at an inclination away from the anchor.

Abstract translation: 在具有倾斜结构和相应的制造方法的微机械部件中，该部件包括具有表面的基板; 第一锚，其设置在基板的表面上并且远离基板延伸; 以及至少一个悬臂，其设置在锚固件的侧表面上，并且其倾斜远离锚固件。

公开(公告)号：US08836053B2

公开(公告)日：2014-09-16

申请号：US13890450

申请日：2013-05-09

Applicant: Heribert Weber ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

Inventor： Heribert Weber ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

IPC: H01L29/84 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/025 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00261 ,  B81C1/00301 ,  B81C2203/0792 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

Abstract translation: 组件系统包括至少一个MEMS元件，用于MEMS元件的微机械结构的盖以及至少一个ASIC基板。 MEMS元件的微机械结构在SOI晶片的功能层中实现。 MEMS元件面朝下安装，ASIC结构上的结构化功能层，并且帽被实现在SOI晶片的衬底中。 ASIC基板包括在两侧设置有分层结构的起始衬底。 在ASIC基板的MEMS侧分层结构和后侧层叠结构中，每种情况都至少实现一个电路电平。 在ASIC基板中，实现至少一个ASIC接触，其电接触后侧分层结构的至少一个电路电平和/或MEMS侧分层结构的至少一个电路电平。

公开(公告)号：US08823116B2

公开(公告)日：2014-09-02

申请号：US13915249

申请日：2013-06-11

Applicant: Heribert Weber

Inventor： Heribert Weber

IPC: H01L29/84

CPC classification number: B81B3/0018 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0109 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L2224/11 ,  H04R2201/003

Abstract: A hybrid integrated component includes: at least one ASIC element having integrated circuit elements and a back-end stack; an MEMS element having a micromechanical structure, which extends over the entire thickness of the MEMS substrate; and a cap wafer. The hybrid integrated component is provided with an additional micromechanical function. The MEMS element is mounted on the ASIC element, so that a gap exists between the micromechanical structure and the back-end stack of the ASIC element. The cap wafer is mounted above the micromechanical structure of the MEMS element. A pressure-sensitive diaphragm structure having at least one deflectable electrode of a capacitor system is implemented in the back-end stack of the ASIC element, which diaphragm structure spans a pressure connection in the rear side of the ASIC element.

Abstract translation: 混合集成部件包括：具有集成电路元件和后端叠层的至少一个ASIC元件; 具有微机械结构的MEMS元件，其在MEMS基板的整个厚度上延伸; 和盖片。 混合集成组件具有额外的微机械功能。 MEMS元件安装在ASIC元件上，使得在微机械结构和ASIC元件的后端堆叠之间存在间隙。 盖晶片安装在MEMS元件的微机械结构上方。 在ASIC元件的后端堆叠中实现具有电容器系统的至少一个可偏转电极的压敏膜结构，该隔膜结构跨越ASIC元件后侧的压力连接。

公开(公告)号：US08779536B2

公开(公告)日：2014-07-15

申请号：US14044223

申请日：2013-10-02

Applicant: Heribert Weber

Inventor： Heribert Weber

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0771 ,  G01L9/0073

Abstract: A pressure sensor component includes a MEMS component having at least one pattern element that is able to be deflected perpendicular to the component plane, which is equipped with at least one electrode of a measuring capacitor device, and an ASIC component having integrated circuit elements and at least one back end stack, at least one counter-electrode of the measuring capacitor device being developed in a metallization plane of the back end stack. The MEMS component is mounted on the back end pile of the ASIC component. The MEMS component includes at least one pressure-sensitive diaphragm pattern and is mounted on the ASIC component in such a way that the pressure-sensitive diaphragm pattern spans a cavity between the MEMS component and the back end stack of the ASIC component.

Abstract translation: 压力传感器部件包括具有至少一个能够垂直于部件平面偏转的图案元件的MEMS部件，该元件平面配备有测量电容器装置的至少一个电极和具有集成电路元件的ASIC部件 至少一个后端堆叠，所述测量电容器装置的至少一个对电极在后端堆叠的金属化平面中显影。 MEMS组件安装在ASIC组件的后端堆上。 MEMS部件包括至少一个压敏光阑图案，并且以这样的方式安装在ASIC部件上，使得压敏光阑图案跨越MEMS部件和ASIC部件的后端垛之间的空腔。