公开(公告)号：US07095047B2

公开(公告)日：2006-08-22

申请号：US10860057

申请日：2004-06-04

申请人： Tatsuya Arao ,  Hideomi Suzawa

发明人： Tatsuya Arao ,  Hideomi Suzawa

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/4908 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/124 ,  H01L27/1288

摘要： To realize the reduction of a manufacturing cost and the enhancement of yield by reducing the number of steps of a TFT in an electro-optical device typified by an active matrix liquid crystal display device. A semiconductor device of the present invention is characterized by including a first wiring and a second wiring formed of a first conductive film on the same insulating surface, a first semiconductor film of one conductivity type formed on the first and second wirings so as to correspond thereto, a second semiconductor film formed on an upper layer of the first semiconductor film of one conductivity type across the first wiring and the second wiring, an insulating film formed on the second semiconductor film, and a third conductive film formed on the insulating film.

公开(公告)号：US07335597B2

公开(公告)日：2008-02-26

申请号：US11498168

申请日：2006-08-03

申请人： Tatsuya Arao ,  Hideomi Suzawa

发明人： Tatsuya Arao ,  Hideomi Suzawa

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L29/4908 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/124 ,  H01L27/1288

摘要： To realize the reduction of a manufacturing cost and the enhancement of yield by reducing the number of steps of a TFT in an electro-optical device typified by an active matrix liquid crystal display device. A semiconductor device of the present invention is characterized by including a first wiring and a second wiring formed of a first conductive film on the same insulating surface, a first semiconductor film of one conductivity type formed on the first and second wirings so as to correspond thereto, a second semiconductor film formed on an upper layer of the first semiconductor film of one conductivity type across the first wiring and the second wiring, an insulating film formed on the second semiconductor film, and a third conductive film formed on the insulating film.

摘要翻译： 通过减少以有源矩阵液晶显示装置为代表的电光装置中的TFT的台阶数来实现制造成本的降低和产量的提高。 本发明的半导体器件的特征在于，在同一绝缘表面上包括由第一导电膜形成的第一布线和第二布线，形成在第一布线和第二布线上的一种导电类型的第一半导体膜，以便与其对应 形成在第一布线和第二布线上的一种导电类型的第一半导体膜的上层上的第二半导体膜，形成在第二半导体膜上的绝缘膜和形成在绝缘膜上的第三导电膜。

公开(公告)号：US06639265B2

公开(公告)日：2003-10-28

申请号：US09768830

申请日：2001-01-25

申请人： Tatsuya Arao ,  Hideomi Suzawa

发明人： Tatsuya Arao ,  Hideomi Suzawa

IPC分类号： H01L2974

CPC分类号： G02F1/13454 ,  G02F1/136213 ,  H01L27/124 ,  H01L27/1255

摘要： A semiconductor device having improved reliability is provided. The semiconductor device has a pixel portion. The pixel portion has a TFT and a storage capacitor. The TFT and the storage capacitor has a semiconductor layer which includes first and second regions formed continuously. The TFT has the first region of the semiconductor layer including a channel forming region, a source region and a drain region located outside the channel forming region, a gate insulating film adjacent to the first region of the semiconductor layer, and a gate electrode formed on the gate insulating film. The storage capacitor has the second region of the semiconductor layer, an insulating film formed adjacent to the second region of the semiconductor layer, and a capacitor wiring formed on the insulating film. The second region of the semiconductor layer contains an impurity element for imparting n-type or p-type conductivity. The thickness of the insulating film adjacent to the second region of the semiconductor layer is thinner than that of the film on the region in which the TFT is formed.

摘要翻译： 提供了具有可靠性提高的半导体器件。 半导体器件具有像素部分。 像素部分具有TFT和存储电容器。 TFT和存储电容器具有包括连续形成的第一和第二区域的半导体层。 TFT具有半导体层的第一区域，包括位于沟道形成区域外的沟道形成区域，源区域和漏极区域，与半导体层的第一区域相邻的栅极绝缘膜，以及形成在 栅极绝缘膜。 存储电容器具有半导体层的第二区域，与半导体层的第二区域相邻形成的绝缘膜，以及形成在绝缘膜上的电容器布线。 半导体层的第二区域包含用于赋予n型或p型导电性的杂质元素。 与半导体层的第二区域相邻的绝缘膜的厚度比形成TFT的区域的膜的厚度薄。

公开(公告)号：US08461596B2

公开(公告)日：2013-06-11

申请号：US13288300

申请日：2011-11-03

申请人： Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Shunpei Yamazaki

发明人： Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Shunpei Yamazaki

IPC分类号： H01L27/14 ,  H01L21/00

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/06 ,  H01L29/66765 ,  H01L29/78669

摘要： The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film 1001 into a taper shape. Thereby, a coverage problem of a pixel electrode 1003 can be solved and an inverse stagger type TFT can be completed with three photomask.

摘要翻译： 本发明的目的是提供一种实现生产率和产量提高的有源矩阵液晶显示装置。 在本发明中，使用相同的蚀刻气体选择性地蚀刻包括含有金属材料的导电膜和含有一种导电类型的杂质元素的第二非晶半导体膜和非晶半导体膜的层叠膜，以形成第一 非晶半导体膜1001成锥形。 由此，可以解决像素电极1003的覆盖问题，并且可以用三个光掩模来完成反交错型TFT。

公开(公告)号：US20120326143A1

公开(公告)日：2012-12-27

申请号：US13530392

申请日：2012-06-22

申请人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

发明人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

IPC分类号： H01L33/40 ,  H01L29/12

CPC分类号： H01L27/3246 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5237 ,  H01L51/5259

摘要： A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

摘要翻译： 提供抑制湿气性能下降的发光装置。 发光装置具有其中具有多孔结构的分隔件围绕每个发光元件的结构。 具有多孔结构的分隔物物理吸附水分; 因此，在发光装置中，隔板在与发光元件非常接近的部分处起吸湿性的作用，从而能够有效地吸附残留在发光元件中或从外部进入的水分或水蒸汽 。 因此，可以有效地抑制由于水分或水蒸气导致的发光装置的性能的降低。

公开(公告)号：US20120058631A1

公开(公告)日：2012-03-08

申请号：US13295278

申请日：2011-11-14

申请人： Kazuko Ikeda ,  Shinya Sasagawa ,  Hideomi Suzawa ,  Shunpei Yamazaki

发明人： Kazuko Ikeda ,  Shinya Sasagawa ,  Hideomi Suzawa ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L27/12 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T428/24421

摘要： An object is to provide a semiconductor device with improved reliability and for which a defect due to an end portion of a semiconductor layer provided in an island-shape is prevented, and a manufacturing method thereof. A structure includes an island-shaped semiconductor layer provided over a substrate, an insulating layer provided over a top surface and a side surface of the island-shaped semiconductor layer, and a gate electrode provided over the island-shaped semiconductor layer with the insulating layer interposed therebetween. In the insulating layer provided to be in contact with the island-shaped semiconductor layer, a region that is in contact with the side surface of the island-shaped semiconductor layer is made to have a lower dielectric constant than a region over the top surface of the island-shaped semiconductor layer.

摘要翻译： 本发明的目的是提供一种可靠性提高的半导体器件及其制造方法，该半导体器件具有提高的岛状半导体层的端部的缺陷。 一种结构包括设置在基板上的岛状半导体层，设置在岛状半导体层的顶表面和侧表面上的绝缘层以及设置在岛状半导体层上的绝缘层的栅电极 插入其间。 在与岛状半导体层接触的绝缘层中，使与岛状半导体层的侧面接触的区域的介电常数比上述表面的区域低 岛状半导体层。

公开(公告)号：US07601572B2

公开(公告)日：2009-10-13

申请号：US11290025

申请日：2005-11-30

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Hirokazu Yamagata

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Hirokazu Yamagata

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78621 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to increase an aperture ratio, a part of or all of a gate electrode that overlaps with channel formation regions (213, 214) of a pixel TFT is caused to overlap with second wirings (source line or drain line) (154, 157). Additionally, a first interlayer insulating film (149) and a second interlayer insulating film (150c) are disposed between the gate electrode and the second wirings (154, 157) so as to decrease a parasitic capacitance.

摘要翻译： 为了增加开口率，与像素TFT的沟道形成区域（213,214）重叠的栅电极的一部分或全部与第二布线（源极线或漏极线）（154,157）重叠 ）。 此外，在栅电极和第二布线（154,157）之间设置第一层间绝缘膜（149）和第二层间绝缘膜（150c），以减小寄生电容。

公开(公告)号：US06995511B2

公开(公告)日：2006-02-07

申请号：US11100271

申请日：2005-04-06

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Ichiro Uehara

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Ichiro Uehara

IPC分类号： H01J1/62

CPC分类号： H01L27/323 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3246 ,  Y10S428/917

摘要： In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented.

公开(公告)号：US06284577B1

公开(公告)日：2001-09-04

申请号：US09383415

申请日：1999-08-26

申请人： Hideomi Suzawa ,  Shunpei Yamazaki ,  Yasuhiko Takemura

发明人： Hideomi Suzawa ,  Shunpei Yamazaki ,  Yasuhiko Takemura

IPC分类号： H01L2100

CPC分类号： H01L29/6659 ,  H01L21/28105 ,  H01L29/7836

摘要： It is intended to provide a method of forming a gate overlap lightly doped impurity region (GOLD). After a gate insulating film is formed by a material mainly made of silicon oxide and a gate electrode is formed with, for instance, silicon, lightly doped impurity regions are formed. A coating mainly made of silicon is formed on the entire surface including the surface of the gate electrode. Side walls mainly made of silicon are formed on the side faces of the gate electrode by anisotropically or semi-anisotropically etching the thus-formed coating in an atmosphere of ClF3, for instance. In this etching step, since a selective etching ratio of the side walls to the gate insulating film is sufficiently large, etching of the gate insulating film is negligible. A source and a drain are then formed by doping an impurity at a high concentration using the gate electrode and the side walls as a mask.

摘要翻译： 旨在提供一种形成栅极重叠轻掺杂杂质区（GOLD）的方法。 在由主要由氧化硅制成的材料形成栅极绝缘膜之后，形成例如硅的栅电极，形成轻掺杂杂质区。 主要由硅制成的涂层形成在包括栅极表面的整个表面上。 例如，通过在ClF 3的气氛中进行各向异性或半各向异性蚀刻如此形成的涂层，在栅电极的侧面上形成主要由硅构成的侧壁。 在该蚀刻步骤中，由于侧壁与栅极绝缘膜的选择性蚀刻比例足够大，所以栅极绝缘膜的蚀刻可以忽略不计。 然后通过使用栅电极和侧壁作为掩模以高浓度掺杂杂质形成源极和漏极。

公开(公告)号：US09040998B2

公开(公告)日：2015-05-26

申请号：US13530392

申请日：2012-06-22

申请人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

发明人： Takuya Tsurume ,  Hideomi Suzawa ,  Shunpei Yamazaki

IPC分类号： H01L27/15 ,  H01L27/32 ,  H01L27/12 ,  H01L51/52

CPC分类号： H01L27/3246 ,  H01L27/1225 ,  H01L27/3262 ,  H01L51/5237 ,  H01L51/5259

摘要： A light-emitting device in which reduction in performance due to moisture is suppressed is provided. The light-emitting device has a structure in which a partition having a porous structure surrounds each of light-emitting elements. The partition having a porous structure physically adsorbs moisture; therefore, in the light-emitting device, the partition functions as a hygroscopic film at a portion extremely close to the light-emitting element, so that moisture or water vapor remaining in the light-emitting device or entering from the outside can be effectively adsorbed. Thus, reduction in performance of the light-emitting device due to moisture or water vapor can be effectively suppressed.

摘要翻译： 提供抑制湿气性能下降的发光装置。 发光装置具有其中具有多孔结构的分隔件围绕每个发光元件的结构。 具有多孔结构的分隔物物理吸附水分; 因此，在发光装置中，隔板在与发光元件非常接近的部分处起吸湿性的作用，从而能够有效地吸附残留在发光元件中或从外部进入的水分或水蒸汽 。 因此，可以有效地抑制由于水分或水蒸气导致的发光装置的性能的降低。