公开(公告)号：US07238576B2

公开(公告)日：2007-07-03

申请号：US10403122

申请日：2003-04-01

申请人： Masakazu Yamaguchi ,  Ichiro Omura ,  Wataru Saito ,  Takashi Shinohe ,  Hiromichi Ohashi

发明人： Masakazu Yamaguchi ,  Ichiro Omura ,  Wataru Saito ,  Takashi Shinohe ,  Hiromichi Ohashi

IPC分类号： H01L21/336

CPC分类号： H01L29/7803 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/66712 ,  H01L29/7722 ,  H01L29/7802 ,  H01L29/7805 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7824

摘要： A semiconductor device comprises a drain layer of first conductivity type, drift layers of first and second conductivity types on the drain layer, an insulating film between the drift layers and contacting the drift layers, a first base layer of second conductivity type on a surface of the drift layer of first conductivity type, a source layer of first conductivity type selectively provided on a surface of the first base layer of second conductivity type, a gate insulating film on the first base layer of second conductivity type between the source layer and the drift layer, a gate electrode on the gate insulating film, a second base layer of second conductivity type on a surface of the drift layer, a first main electrode on the drain layer, and a second main electrode on the source layer, the first base layer and the second base layer.

摘要翻译： 半导体器件包括第一导电类型的漏极层，漏极层上的第一和第二导电类型的漂移层，漂移层之间的绝缘膜和与漂移层接触的第二导电类型的第一基底层， 第一导电类型的漂移层，选择性地设置在第二导电类型的第一基极层的表面上的第一导电类型的源极层，在源极层和漂移体之间的第二导电类型的第一基极层上的栅极绝缘膜 栅极绝缘膜上的栅电极，漂移层的表面上的第二导电类型的第二基极层，漏极层上的第一主电极和源极层上的第二主电极，第一基极层 和第二基层。

公开(公告)号：US20070045764A1

公开(公告)日：2007-03-01

申请号：US11505809

申请日：2006-08-18

申请人： Tetsuo Hatakeyama ,  Takashi Shinohe

发明人： Tetsuo Hatakeyama ,  Takashi Shinohe

IPC分类号： H01L31/07

CPC分类号： H01L29/872 ,  H01L29/0615 ,  H01L29/08

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a semiconductor region of the first conductivity type formed on a top surface of the semiconductor substrate, a lower electrode formed on a bottom surface of the semiconductor substrate, an upper electrode formed on a top surface of the semiconductor region, a buried semiconductor layer of a second conductivity type formed in the semiconductor region, a first semiconductor layer of the second conductivity type, formed on the top surface of the semiconductor region and connected to the upper electrode, and a second semiconductor layer of the second conductivity type, formed on a side surface of the semiconductor region and connected to the buried semiconductor layer and the first semiconductor layer, the second semiconductor layer having a lower second conductivity type impurity concentration than the buried semiconductor layer.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，形成在半导体衬底的顶表面上的第一导电类型的半导体区域，形成在半导体衬底的底表面上的下电极，形成在半导体衬底的上表面上的上电极 半导体区域的顶表面，形成在半导体区域中的第二导电类型的掩埋半导体层，形成在半导体区域的顶表面上并连接到上电极的第二导电类型的第一半导体层，以及 第二导电类型的第二半导体层形成在半导体区域的侧表面上并连接到掩埋半导体层和第一半导体层，第二半导体层具有比掩埋半导体层低的第二导电类型杂质浓度。

公开(公告)号：US20070023781A1

公开(公告)日：2007-02-01

申请号：US11493832

申请日：2006-07-27

申请人： Makoto Mizukami ,  Takashi Shinohe

发明人： Makoto Mizukami ,  Takashi Shinohe

IPC分类号： H01L31/00

CPC分类号： H01L29/872 ,  H01L29/1608 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8611

摘要： A semiconductor rectifier has a semiconductor layer formed on a substrate, an electric field reduced layer of conductive type contrary to that of the semiconductor layer, which is formed on the semiconductor layer positioned on a bottom portion of a trench formed on a portion of the semiconductor layer, a first electrode connected on the semiconductor layer adjacent to the trench by Schottky junction, a second electrode which is connected on sidewalls of the trench by Schottky junction, electrically conductive with the first electrode and made of a material different from that of the first electrode, and a third electrode formed on the substrate at opposite side of the semiconductor layer.

摘要翻译： 半导体整流器具有形成在基板上的半导体层，与半导体层相反的导电类型的电场降低层形成在位于形成在半导体的一部分上的沟槽的底部上的半导体层上 层，通过肖特基结连接在与沟槽相邻的半导体层上的第一电极，通过肖特基结连接在沟槽的侧壁上的第二电极，与第一电极导电并且由不同于第一电极的材料制成 电极，以及在半导体层的相对侧的基板上形成的第三电极。

公开(公告)号：US07049675B2

公开(公告)日：2006-05-23

申请号：US10795270

申请日：2004-03-09

申请人： Kozo Kinoshita ,  Tetsuo Hatakeyama ,  Takashi Shinohe

发明人： Kozo Kinoshita ,  Tetsuo Hatakeyama ,  Takashi Shinohe

IPC分类号： H01L23/58

CPC分类号： H01L29/7811 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/404 ,  H01L29/66143 ,  H01L29/7813 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high withstand voltage semiconductor device does not show any significant fall of its withstand voltage if the impurity concentration of the RESURF layer of a low impurity concentration semiconductor region thereof varies from the optimal level and/or influenced by the fixed electric charge. The device is produced by forming a ring-shaped high impurity concentration edge termination layer of a second conductivity type and a ring-shaped low impurity concentration RESURF layer of the second conductivity type on the front surface of a semiconductor layer of a first conductivity type carrying electrodes respectively on the opposite surfaces thereof along the outer edge of one of the electrodes, then forming an outer ring layer with an impurity concentration substantially as low as the RESURF layer concentrically outside the RESURF layer with a gap separating therebetween and subsequently forming an inner ring layer with an impurity concentration substantially as high as the edge termination layer concentrically inside the RESURF layer.

公开(公告)号：US20060102908A1

公开(公告)日：2006-05-18

申请号：US11272858

申请日：2005-11-15

申请人： Seiji Imai ,  Takashi Shinohe

发明人： Seiji Imai ,  Takashi Shinohe

IPC分类号： H01L31/0312

CPC分类号： H01L29/7802 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7816

摘要： A semiconductor device includes an SiC substrate, an SiC layer of a first conductivity type disposed on the upper surface of the SiC substrate, a first SiC region of a second conductivity type disposed on the SiC layer, a second SiC region of the first conductivity type disposed on a surface region of the first SiC region, including a nitrogen-added first sub-region and a phosphorus-added second sub-region disposed in contact with the first sub-region, a gate insulating film disposed to extend over the SiC layer, first SiC region, and first sub-region of the second SiC region, a gate electrode formed on the gate insulating film, a first electrode formed on the second sub-region of the second SiC region and the first SiC region, and a second electrode formed on the lower surface of the SiC substrate.

摘要翻译： 半导体器件包括SiC衬底，设置在SiC衬底的上表面上的第一导电类型的SiC层，设置在SiC层上的第二导电类型的第一SiC区域，第一导电类型的第二SiC区域 设置在与所述第一子区域接触的包括添加氮的第一子区域和添加磷的第二子区域的所述第一SiC区域的表面区域上，设置成在所述SiC层上延伸的栅极绝缘膜 第一SiC区域和第二SiC区域的第一子区域，形成在栅极绝缘膜上的栅电极，形成在第二SiC区域的第二子区域上的第一电极和第一SiC区域，以及第二SiC区域 形成在SiC衬底的下表面上的电极。

公开(公告)号：US20050029558A1

公开(公告)日：2005-02-10

申请号：US10942000

申请日：2004-09-16

申请人： Tetsuo Hatakeyama ,  Takashi Shinohe

发明人： Tetsuo Hatakeyama ,  Takashi Shinohe

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/24 ,  H01L29/739 ,  H01L29/772 ,  H01L29/78 ,  H01L31/112

CPC分类号： H01L29/7811 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/0692 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7392 ,  H01L29/7395 ,  H01L29/7722 ,  H01L29/7802 ,  H01L29/872

摘要： A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sandwiched between adjacent ones of the trenches and having an impurity concentration higher than that of the semiconductor layer, a second region having opposite conductivity to the first regions and continuously disposed in a trench sidewall and bottom portion, a sidewall insulating film disposed on the second region of the trench sidewall, a third region disposed on the second region of the trench bottom portion and having the same conductivity as and the higher impurity concentration than the second region, a fourth region disposed on the back surface of the semiconductor layer, a first electrode formed on each first region, a second electrode connected to the third region, and a third electrode formed on the fourth region.

公开(公告)号：US06246077B1

公开(公告)日：2001-06-12

申请号：US09396372

申请日：1999-09-15

申请人： Setsuko Kobayashi ,  Takashi Shinohe ,  Tomoki Inoue ,  Akihiro Yahata

发明人： Setsuko Kobayashi ,  Takashi Shinohe ,  Tomoki Inoue ,  Akihiro Yahata

IPC分类号： H01L310312

CPC分类号： H01L29/66068 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7801 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7838

摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer, the energy difference between the bottom of the conductive band and the vacuum level in the second semiconductor layer being smaller than that in the first semiconductor layer, a gate electrode formed above the second semiconductor layer with a gate insulating film interposed therebetween, and a pair of third semiconductor layers of the second conductivity type, being in contact with at least the first semiconductor layer and faced each other in a region of the surface of the first semiconductor layer, so that a channel region is formed under the gate electrode.

摘要翻译： 半导体器件包括第一导电类型的第一半导体层，形成在第一半导体层的表面上的第一导电类型的第二半导体层，导电带的底部与第二半导体层的真空度之间的能量差 半导体层比第一半导体层小的栅电极，形成在第二半导体层上方的栅极绝缘膜之间的栅电极和第二导电类型的一对第三半导体层与至少第一半导体层 半导体层并且在第一半导体层的表面的区域中彼此面对，从而在栅电极下形成沟道区。

公开(公告)号：US6111454A

公开(公告)日：2000-08-29

申请号：US281937

申请日：1999-03-31

申请人： Takashi Shinohe ,  Masakazu Yamaguchi ,  Kimihiro Hoshi

发明人： Takashi Shinohe ,  Masakazu Yamaguchi ,  Kimihiro Hoshi

IPC分类号： H03K17/042 ,  H03K17/687 ,  H03K17/785

CPC分类号： H03K17/785 ,  H03K17/04206

摘要： A semiconductor device comprises a voltage-driven switching element having a cathode and an anode, in which a voltage is to be applied between the cathode and anode, a power-supply circuit connected between the cathode and anode of the voltage-driven switching element and comprising capacitors, resistors and a reverse current-low preventing diode, for generating an intermediate voltage, a charging switching element for charging a gate of the voltage-driven switching element, using the intermediate voltage generated by the power-supply circuit, a discharging switching element for discharging the gate of the voltage-driven switching element, and a photovoltaic element for generating a photovoltaic power to control to drive the charging switching element and the discharging switching element.

摘要翻译： 半导体器件包括具有阴极和阳极的电压驱动开关元件，其中在阴极和阳极之间施加电压，连接在电压驱动的开关元件的阴极和阳极之间的电源电路和 包括用于产生中间电压的电容器，电阻器和反向电流低阻抗二极管，使用由电源电路产生的中间电压对电压驱动的开关元件的栅极进行充电的充电开关元件，放电开关 用于对电压驱动的开关元件的栅极进行放电的元件，以及用于产生光伏功率以控制驱动充电开关元件和放电开关元件的光电元件。

公开(公告)号：US6054748A

公开(公告)日：2000-04-25

申请号：US41799

申请日：1998-03-13

申请人： Masanori Tsukuda ,  Takashi Shinohe ,  Masakazu Yamaguchi

发明人： Masanori Tsukuda ,  Takashi Shinohe ,  Masakazu Yamaguchi

IPC分类号： H01L21/329 ,  H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861 ,  H01L23/58

CPC分类号： H01L29/861 ,  H01L29/0615 ,  H01L29/1095 ,  H01L29/66136 ,  H01L29/66333 ,  H01L29/7396 ,  H01L29/7397 ,  H01L29/0657 ,  H01L2924/0002

摘要： A semiconductor power device includes a high-resistance semiconductor substrate of the first conductivity type having first and second major surfaces and a recess in either one of the first and second major surfaces, and a semiconductor power element with a field relaxation structure, at least part of which is formed in a region of the semiconductor substrate where the recess is formed.

摘要翻译： 半导体功率器件包括具有第一和第二主表面的第一导电类型的高电阻半导体衬底和在第一和第二主表面中的任一个中的凹部，以及具有场弛豫结构的半导体功率元件，至少部分 其形成在形成有凹部的半导体基板的区域中。

公开(公告)号：US5977564A

公开(公告)日：1999-11-02

申请号：US951674

申请日：1997-10-16

申请人： Setsuko Kobayashi ,  Takashi Shinohe ,  Tomoki Inoue ,  Akihiro Yahata

发明人： Setsuko Kobayashi ,  Takashi Shinohe ,  Tomoki Inoue ,  Akihiro Yahata

IPC分类号： H01L21/04 ,  H01L21/205 ,  H01L21/336 ,  H01L29/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/267 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/66068 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/267 ,  H01L29/7801 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7838 ,  H01L29/1608

摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type formed on the surface of the first semiconductor layer, the energy difference between the bottom of the conductive band and the vacuum level in the second semiconductor layer being smaller than that in the first semiconductor layer, a gate electrode formed above the second semiconductor layer with a gate insulating film interposed therebetween, and a pair of third semiconductor layers of the second conductivity type, being in contact with at least the first semiconductor layer and faced each other in a region of the surface of the first semiconductor layer, so that a channel region is formed under the gate electrode.

摘要翻译： 半导体器件包括第一导电类型的第一半导体层，形成在第一半导体层的表面上的第一导电类型的第二半导体层，导电带的底部与第二半导体层的真空度之间的能量差 半导体层比第一半导体层小的栅电极，形成在第二半导体层上方的栅极绝缘膜之间的栅电极和第二导电类型的一对第三半导体层与至少第一半导体层 半导体层并且在第一半导体层的表面的区域中彼此面对，从而在栅电极下形成沟道区。