公开(公告)号：US20070102767A1

公开(公告)日：2007-05-10

申请号：US11616836

申请日：2006-12-27

申请人： Min-Hee CHO ,  Ji-Young Kim

发明人： Min-Hee CHO ,  Ji-Young Kim

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L21/823481 ,  H01L21/76229 ,  H01L21/823462

摘要： A semiconductor device includes a dual gate dielectric layer that increases a performance of a semiconductor device. The semiconductor device includes a first dielectric layer having a predetermined thickness on a semiconductor substrate. The first dielectric layer is formed on a first region. The semiconductor device also includes a second dielectric layer having a dielectric constant higher than that of the first dielectric layer. The second dielectric layer is formed on both the first region and a second region.

摘要翻译： 半导体器件包括提高半导体器件的性能的双栅介质层。 半导体器件包括在半导体衬底上具有预定厚度的第一电介质层。 第一介电层形成在第一区域上。 半导体器件还包括具有高于第一介电层的介电常数的介电常数的第二电介质层。 第二介电层形成在第一区域和第二区域两者上。

公开(公告)号：US07164170B2

公开(公告)日：2007-01-16

申请号：US10968599

申请日：2004-10-18

申请人： Ji-Young Kim

发明人： Ji-Young Kim

IPC分类号： H01L29/76

CPC分类号： H01L29/66621 ,  H01L29/7834

摘要： An inner spacer is formed in a sidewall of a gate in contact with a first active region that is electrically connected to an upper capacitor, thereby reducing a gate induced drain leakage (GIDL). A structure of a recess gate transistor includes a gate insulation layer, a gate electrode, a first gate spacer, a second gate spacer and source/drain regions. The gate insulation layer is formed within a recess. The gate electrode is surrounded by the gate insulation layer and is extended from within the recess. The first gate spacer is spaced with a predetermined distance horizontally with a portion of the gate insulation layer, being formed in a sidewall of the gate electrode. The second gate spacer is formed in another part of the sidewall of the gate electrode. The source/drain regions are formed mutually oppositely on first and second active regions with the gate electrode therebetween.

摘要翻译： 内部间隔件形成在栅极的侧壁中，与与上部电容器电连接的第一有源区域接触，由此减小栅极引起漏极泄漏（GIDL）。 凹槽栅极晶体管的结构包括栅极绝缘层，栅极电极，第一栅极间隔物，第二栅极间隔物和源极/漏极区域。 栅极绝缘层形成在凹部内。 栅电极被栅绝缘层包围，并从凹槽内延伸。 第一栅极间隔物与门极绝缘层的一部分水平地间隔预定距离，形成在栅电极的侧壁中。 第二栅极间隔物形成在栅电极的侧壁的另一部分中。 源极/漏极区域在第一和第二有源区域上彼此相对地形成，栅电极在它们之间。

公开(公告)号：US20050282352A1

公开(公告)日：2005-12-22

申请号：US10964170

申请日：2004-10-12

申请人： Min-Hee Cho ,  Ji-Young Kim

发明人： Min-Hee Cho ,  Ji-Young Kim

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234

CPC分类号： H01L21/823481 ,  H01L21/76229 ,  H01L21/823462

摘要： A method of forming a dual gate dielectric layer increases a performance of a semiconductor device by using a dielectric layer having a high dielectric constant, including forming a first dielectric layer having a predetermined thickness on a semiconductor substrate; removing the first dielectric layer formed on a second region, but leaving this layer on a first region; and forming a second dielectric layer having a dielectric constant higher than that of the first dielectric layer, on the first and second regions.

摘要翻译： 通过使用具有高介电常数的介电层，包括在半导体衬底上形成具有预定厚度的第一介质层，形成双栅介质层的方法提高了半导体器件的性能; 去除形成在第二区域上的第一介电层，但将该层留在第一区域上; 以及在所述第一和第二区域上形成具有高于所述第一介电层的介电常数的介电常数的第二电介质层。

公开(公告)号：US20050267104A1

公开(公告)日：2005-12-01

申请号：US10937187

申请日：2004-09-09

申请人： Vara Prasad Josyula ,  Robert Gadwood ,  Lisa Thomasco ,  Ji-Young Kim ,  Allison Choy ,  Frederick Boyer

发明人： Vara Prasad Josyula ,  Robert Gadwood ,  Lisa Thomasco ,  Ji-Young Kim ,  Allison Choy ,  Frederick Boyer

IPC分类号： A61K31/426 ,  A61K31/541 ,  C07D413/02 ,  C07D413/10 ,  C07D413/14 ,  C07D417/02

CPC分类号： C07D413/10 ,  C07D413/14

摘要： The present invention relates to acyloxymethylcarbamate oxazolidinones. The compounds of the present invention have potent activity with excellent oral bioavailability against Gram-positive and Gram-negative bacteria.

摘要翻译： 本发明涉及酰氧基甲基氨基甲酸酯恶唑烷酮。 本发明的化合物对革兰氏阳性和革兰氏阴性菌具有优异的口服生物利用度的有效活性。

公开(公告)号：US20050186740A1

公开(公告)日：2005-08-25

申请号：US11067282

申请日：2005-02-25

申请人： Ji-Young Kim

发明人： Ji-Young Kim

IPC分类号： H01L21/336 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L27/10888 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10891 ,  H01L29/66621 ,  H01L29/66666 ,  H01L29/7827

摘要： According to some embodiments, a structure of vertical transistor includes gate electrodes distanced by a predetermined interval in an active region, formed in a vertical shape to have a predetermined depth from a top surface of a semiconductor substrate. A gate insulation layer is formed between one side wall of the gate electrode and the substrate. A gate spacer is formed in another sidewall of the gate electrode, covering the gate electrode. A contact plug is formed between the gate spacer. A plug impurity layer is formed in a lower part of the contact plug, and source and drain are formed opposite to the gate electrode within the active region. Thereby, an area occupied by a gate electrode is substantially reduced, so a unit memory cell has a 4F2 structure, reducing a memory cell size, by forming a vertical-type gate electrode within an active region.

摘要翻译： 根据一些实施例，垂直晶体管的结构包括在有源区域中间隔预定间隔的栅电极，其形成为垂直形状以具有来自半导体衬底的顶表面的预定深度。 在栅电极的一个侧壁和基板之间形成栅极绝缘层。 栅极间隔物形成在栅电极的另一个侧壁中，覆盖栅电极。 在栅间隔件之间形成接触塞。 插塞杂质层形成在接触插塞的下部，源极和漏极形成在有源区内与栅电极相对。 由此，通过在有源区域内形成垂直型栅电极，由栅电极占据的面积大大减小，因此单位存储单元具有4F2结构，减小存储单元尺寸。

公开(公告)号：US20050186728A1

公开(公告)日：2005-08-25

申请号：US11108929

申请日：2005-04-18

申请人： Ji-Young Kim

发明人： Ji-Young Kim

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/8242 ,  H01L27/02 ,  H01L27/10 ,  H01L27/108 ,  H01L29/73

CPC分类号： H01L27/10894 ,  H01L27/0207 ,  H01L27/10808 ,  H01L27/10885 ,  H01L27/10888

摘要： A semiconductor memory device includes a plurality of bit line structures arranged in parallel on a semiconductor substrate and having a plurality of bit lines and an insulating material surrounding the bit lines, an isolation layer formed in a portion in spaces between the bit line structures to define a predetermined active region and having substantially the same height as the bit line structures, a semiconductor layer formed in the predetermined active region surrounded by the bit line structures and the isolation layer and having substantially the same height as the bit line structures and the isolation layer, a plurality of word line structures arranged in parallel on the bit line structures, the isolation layer, and the semiconductor layer, and comprising a plurality of word lines and an insulating material surrounding the word lines, and source and drain regions formed in the semiconductor layer on either side of the word line structures.

公开(公告)号：US20050017289A1

公开(公告)日：2005-01-27

申请号：US10759239

申请日：2004-01-20

申请人： Ji-Young Kim ,  Jin-Jun Park

发明人： Ji-Young Kim ,  Jin-Jun Park

IPC分类号： H01L21/762 ,  H01L21/336 ,  H01L21/76 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/11 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66787 ,  H01L29/42384 ,  H01L29/78696

摘要： A vertical double channel silicon-on-insulator (SOI) field-effect-transistor (FET) includes a pair of two vertical semiconductor layers in contact with a pair of parallel shallow trench isolation layers on a substrate, a source, a drain and a channel region on each of the pair of vertical semiconductor layers with corresponding regions on the pair of vertical semiconductor layers facing each other in alignment, a gate oxide on the channel region of both of the pair of the vertical semiconductor layers, and a gate electrode, a source electrode, and a drain electrode electrically connecting the respective regions of the pair of vertical semiconductor layers.

公开(公告)号：US06780401B2

公开(公告)日：2004-08-24

申请号：US10445589

申请日：2003-05-27

申请人： Ji-Young Kim ,  Jong-Ho Kim ,  Sug-Youn Chang ,  Sei-Young Yun

发明人： Ji-Young Kim ,  Jong-Ho Kim ,  Sug-Youn Chang ,  Sei-Young Yun

IPC分类号： A61K716

CPC分类号： A61Q11/00 ,  A61K8/0208 ,  A61K8/22 ,  A61K8/24 ,  A61K8/8164 ,  A61K8/817 ,  A61K8/8176 ,  A61K8/8182

摘要： The present invention relates to a dry type tooth whitening patch comprising peroxide as a tooth whitening agent. In particular, disclosed is a dry type tooth whitening patch in which a peroxide is contained, as a teeth whitening agent, in a matrix type adhesive layer. The adhesive layer includes, as a base polymer thereof, a hydrophilic glass polymer which provides a strong adhesion to teeth while releasing the tooth whitening agent when hydrated on the enamel layers of teeth in the moist oral cavity. The dry type patch according to the present invention is convenient in use, as compared to wet type patches. Further, it exhibits a superior adhesion while being maintained in a state attached to the teeth for a lengthened period of time so as to assure an enough contact time between the whitening agent in the patch and stains on the teeth, thereby giving a sufficient whitening effect.

摘要翻译： 本发明涉及含有过氧化物作为牙齿增白剂的干式牙齿增白贴剂。 特别地，公开了在基质型粘合剂层中含有作为牙齿增白剂的过氧化物的干式牙齿增白贴剂。 粘合剂层包括作为其基础聚合物的亲水性玻璃聚合物，其在湿润口腔中的牙齿的牙釉质层上水合时释放牙齿增白剂，同时提供对牙齿的强粘附性。 与湿式贴剂相比，本发明的干型贴剂使用方便。 此外，它表现出优异的粘附性，同时保持在附着于牙齿的状态下延长一段时间，以确保贴剂中的增白剂和牙齿上的污渍之间的足够的接触时间，从而产生足够的美白效果 。

公开(公告)号：US06759533B2

公开(公告)日：2004-07-06

申请号：US10465754

申请日：2003-06-19

申请人： Carl A. Busacca ,  Magnus C. Eriksson ,  Ji-Young Kim

发明人： Carl A. Busacca ,  Magnus C. Eriksson ,  Ji-Young Kim

IPC分类号： C07D47114

CPC分类号： C07D471/14

摘要： A process and novel intermediates for making compounds of the formula I: wherein: R2 is selected from the group consisting of H, F, Cl, C1-4 alkyl, C3-4 cycloalkyl and CF3; R4 is H or Me; R5 is H, Me or Et, with the proviso that R4 and R5 are not both Me, and if R4 is Me then R5 cannot be Et; R11 is Me, Et, cyclopropyl, propyl, isopropyl, or cyclobutyl; and Q is selected from the group consisting of:

摘要翻译： 制备式I化合物的方法和新型中间体：其中：R 2选自H，F，Cl，C 1-4烷基，C 3-4环烷基和CF 3; R 4是H 或Me; R 5是H，Me或Et，条件是R 4和R 5不都是Me，如果R 4是Me，那么R 5不能是Et; R 环丙基，丙基，异丙基或环丁基; 且Q选自：

公开(公告)号：US06689344B2

公开(公告)日：2004-02-10

申请号：US10243182

申请日：2002-09-13

申请人： Sug-Youn Chang ,  Ji-Young Kim ,  Jong-Ho Kim ,  Sei-Young Yun

发明人： Sug-Youn Chang ,  Ji-Young Kim ,  Jong-Ho Kim ,  Sei-Young Yun

IPC分类号： A61K720

CPC分类号： A61Q11/00 ,  A61K8/0208 ,  A61K8/22

摘要： The present invention relates to a dry type tooth-whitening patch comprising peroxide as a tooth whitening agent. In particular, disclosed is a dry type tooth-whitening patch in which peroxide is contained, as a teeth whitening agent, in a matrix type adhesive layer. The adhesive layer includes, as a base polymer thereof, a hydrophilic glass polymer, which provides a strong adhesion to teeth while releasing the tooth whitening agent when hydrated on the enamel layers of teeth in the moist oral cavity. The dry type patch according to the present invention is convenient in use, as compared to wet type patches. Further, it exhibits a superior adhesion while being maintained in a state attached to the teeth for a lengthened period of time so as to assure an enough contact time between the whitening agent in the patch and stains on the teeth, thereby giving a sufficient whitening effect.

摘要翻译： 本发明涉及含有过氧化物作为牙齿增白剂的干式牙齿美白贴剂。 具体地，公开了在基质型粘合剂层中含有作为牙齿增白剂的过氧化物的干性牙齿增白贴剂。 粘合剂层包括作为其基础聚合物的亲水性玻璃聚合物，其在潮湿的口腔中的牙齿的牙釉质层上水合时释放牙齿增白剂，同时提供对牙齿的强粘附性。根据 与湿型贴剂相比，本发明使用方便。 此外，它表现出优异的粘附性，同时保持在附着于牙齿的状态下延长一段时间，以确保贴剂中的增白剂和牙齿上的污渍之间的足够的接触时间，从而产生足够的美白效果 。