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308 条记录 (耗时 0.036 秒)

    ROTOR FOR ROTATING ELECTRIC MACHINE
    82.
    发明申请
    ROTOR FOR ROTATING ELECTRIC MACHINE 有权
    旋转电机转子

    公开(公告)号：US20120299404A1

    公开(公告)日：2012-11-29

    申请号：US13519543

    申请日：2010-09-29

    申请人： Yoshihisa Yamamoto ,  Yukinori Nakamori ,  Satoshi Murakami ,  Yoichi Miyoshi ,  Meio Gi

    发明人： Yoshihisa Yamamoto ,  Yukinori Nakamori ,  Satoshi Murakami ,  Yoichi Miyoshi ,  Meio Gi

    IPC分类号： H02K9/00

    CPC分类号： H02K1/2766 ,  H02K1/28 ,  H02K1/32 ,  H02K9/19

    摘要： In a rotor for the dynamo, the interior circumference face of a rotor core main body makes contact in a thermally transmissible manner with a rotor axle, and the rotor axle includes a cooling medium circulation space. The rotor is provided with a cooling medium supply member, which supplies the cooling medium to the cooling medium circulation space. The cooling medium supply member is provided with a cooling medium supply path that extends in the rotor axle direction, and cooling medium supply holes that extend externally in the direction of the rotor diameter. The cooling medium supply holes are provided with supply apertures that open toward the cooling interior circumference face. The rotor axle is provided with cooling medium discharge holes that extend externally in the direction of the rotor diameter. The cooling medium discharge holes are provided with discharge apertures that open externally in the diameter direction.

    摘要翻译： 在发电机的转子中，转子铁芯主体的内周面与转子轴以热传递的方式接触，转子轴包括冷却介质循环空间。 转子设置有冷却介质供应构件，其将冷却介质供应到冷却介质循环空间。 冷却介质供给部件设置有沿转子轴方向延伸的冷却介质供给路径和从转子直径方向向外延伸的冷却介质供给孔。 冷却介质供给孔设置有朝向冷却内周面打开的供给孔。 转子轴设有从转子直径方向向外延伸的冷却介质排出孔。 冷却介质排出孔设有沿直径方向向外开口的排出孔。

    Semiconductor Device and Method of Manufacturing the Same
    83.
    发明申请
    Semiconductor Device and Method of Manufacturing the Same 有权
    半导体器件及其制造方法

    公开(公告)号：US20120235153A1

    公开(公告)日：2012-09-20

    申请号：US13426650

    申请日：2012-03-22

    申请人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

    发明人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

    IPC分类号： H01L33/36

    CPC分类号： H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

    摘要： In a semiconductor device, gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

    摘要翻译： 在半导体器件中，栅极信号线在结晶半导体膜之上彼此间隔开。 因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。 在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。 由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。 从而防止了驱动电路TFT遭受静电放电损坏。

    Cooling structure of stator
    84.
    发明授权
    Cooling structure of stator 有权
    定子冷却结构

    公开(公告)号：US08269382B2

    公开(公告)日：2012-09-18

    申请号：US12964122

    申请日：2010-12-09

    申请人： Yukinori Nakamori ,  Satoshi Murakami ,  Hirotaka Mori

    发明人： Yukinori Nakamori ,  Satoshi Murakami ,  Hirotaka Mori

    IPC分类号： H02K9/00

    CPC分类号： H02K9/19 ,  H02K1/20 ,  H02K3/24 ,  H02K9/005

    摘要： A cooling structure of a stator, including a case that accommodates a rotating electrical machine, and cooling a coil end portion protruding from a stator core included in the stator of the rotating electrical machine. The structure supplies a cooling medium from the stator axial direction toward a gap that is formed between an inner surface of the case and an outer edge of the stator core. The cooling medium introducing gap is formed above a portion of the coil end portion to which the cooling medium is to be supplied. A storage space forming member is provided along an outer peripheral surface of the coil end portion. The storage space forming member has a contact portion having a first contact portion that contacts the inner surface of the case to close the cooling medium storage space on the one side in the stator axial direction.

    摘要翻译： 定子的冷却结构，包括容纳旋转电机的壳体，并且冷却从包括在旋转电机的定子中的定子铁芯突出的线圈端部。 结构从定子轴向朝向形成在壳体的内表面和定子芯的外边缘之间的间隙提供冷却介质。 冷却介质导入间隙形成在要供给冷却介质的线圈端部的一部分的上方。 沿着线圈端部的外周面设置存储空间形成构件。 存储空间形成构件具有接触部，该接触部具有与壳体的内表面接触的第一接触部，以在定子轴向的一侧闭合冷却介质容纳空间。

    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME
    85.
    发明申请
    LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 有权
    发光装置及其制造方法

    公开(公告)号：US20120228643A1

    公开(公告)日：2012-09-13

    申请号：US13417362

    申请日：2012-03-12

    申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

    发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masayuki Sakakura ,  Toru Takayama

    IPC分类号： H01L33/00

    CPC分类号： H01L27/3244 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/16 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/5008 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/566

    摘要： The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride.

    摘要翻译： 包括薄膜晶体管和发光元件的发光装置包括： 栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，第三无机绝缘层上的阳极，与第三有机绝缘层重叠的第二有机绝缘层 所述阳极的端部具有35度至45度的倾斜角度，在所述第二有机绝缘层的上表面和所述侧表面上的第四无机绝缘层，并且在所述阳极上具有开口，与所述阳极接触的有机化合物层 和第四无机绝缘层并含有发光材料，以及与有机化合物层接触的阴极，其中第三和第四无机绝缘层包括氮化硅或氮化铝。

    Semiconductor device
    86.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08143627B2

    公开(公告)日：2012-03-27

    申请号：US12822260

    申请日：2010-06-24

    申请人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

    发明人： Satoshi Murakami ,  Yosuke Tsukamoto ,  Tomoaki Atsumi ,  Masayuki Sakakura

    IPC分类号： H01L33/00

    CPC分类号： H01L29/04 ,  G02F1/13454 ,  G02F1/136204 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124

    摘要： In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.

    摘要翻译： 在制造半导体器件时，通过干蚀刻在层间绝缘膜中形成接触孔时产生静电。 防止了由于所产生的静电的行进而对像素区域或驱动电路区域的损害。 栅极信号线在结晶半导体膜之上彼此间隔开。 因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。 在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。 由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。 从而防止了驱动电路TFT遭受静电放电损坏。

    Semiconductor display device
    89.
    发明授权
    Semiconductor display device 有权
    半导体显示装置

    公开(公告)号：US08008666B2

    公开(公告)日：2011-08-30

    申请号：US12711611

    申请日：2010-02-24

    申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

    发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

    IPC分类号： H01L29/04

    CPC分类号： H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

    摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

    摘要翻译： 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。