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193 条记录 (耗时 0.039 秒)

    Fabrication of a coercivity hard bias using FePt containing film
    81.
    发明申请
    Fabrication of a coercivity hard bias using FePt containing film 有权
    使用含FePt的膜制造矫顽力硬偏差

    公开(公告)号：US20120129007A1

    公开(公告)日：2012-05-24

    申请号：US12927697

    申请日：2010-11-22

    申请人： Min Zheng ,  Kunliang Zhang ,  Min Li

    发明人： Min Zheng ,  Kunliang Zhang ,  Min Li

    IPC分类号： G11B5/39 ,  C23C14/14 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  H01F10/123 ,  H01F10/30 ,  H01F41/302 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1121

    摘要： The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art.

    摘要翻译： CPP-TMR传感器的自由层由横向设置的硬偏置（HB）层偏置，其包括种层结构，高矫顽力材料的磁性层结构和覆盖层结构。 磁性层结构是含FePt的材料层，例如FePtCu，而层和覆盖层包括Cr，CrTi，Fe，FeCo或FeCoMo层。 这些组合使得能够促进含FePt的材料的L10相，其提供比现有技术低得多的退火温度下的高矫顽磁性层结构。

    FCC-like trilayer AP2 structure for CPP GMR EM improvement
    82.
    发明授权
    FCC-like trilayer AP2 structure for CPP GMR EM improvement 有权
    FCC类三层AP2结构，用于CPP GMR EM改进

    公开(公告)号：US08012316B2

    公开(公告)日：2011-09-06

    申请号：US12583742

    申请日：2009-08-25

    申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

    IPC分类号： C23C14/14

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

    摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

    摘要翻译： 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

    Uniformity in CCP magnetic read head devices
    83.
    发明授权
    Uniformity in CCP magnetic read head devices 有权
    CCP磁读头装置的均匀性

    公开(公告)号：US07872838B2

    公开(公告)日：2011-01-18

    申请号：US11704399

    申请日：2007-02-09

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen

    IPC分类号： G11B5/127

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/3983 ,  Y10T428/1121

    摘要： Improved performance uniformity among CPP magnetic read devices that include an oxide barrier has been achieved by fabricating the oxide layer from at least two separately formed CCP layers. Each CCP layer is given its own PIT and IAO treatment which is of shorter duration than the PIT/IAO treatment that is used when only a single CCP layer is formed.

    摘要翻译： 通过从至少两个单独形成的CCP层制造氧化物层，已经实现了包括氧化物屏障的CPP磁读取装置之间的改进的性能均匀性。 给每个CCP层提供自己的PIT和IAO处理，其持续时间比仅在形成单个CCP层时使用的PIT / IAO处理更短。

    TMR device with Hf based seed layer
    86.
    发明申请
    TMR device with Hf based seed layer 有权
    具有Hf基种子层的TMR器件

    公开(公告)号：US20090194833A1

    公开(公告)日：2009-08-06

    申请号：US12319734

    申请日：2009-01-12

    申请人： Hui-Chuan Wang ,  Kunliang Zhang ,  Tong Zhao ,  Min Li

    发明人： Hui-Chuan Wang ,  Kunliang Zhang ,  Tong Zhao ,  Min Li

    IPC分类号： H01L29/82

    CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/10 ,  Y10T428/1291

    摘要： A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.

    摘要翻译： 公开了一种MTJ结构，其中种子层由下Ta层，中Hf层和上NiFe或NiFeX层制成，其中X是Co，Cr或Cu。 可选地，可以使用Zr，Cr，HfZr或HfCr作为中间层，并且可以使用具有FCC结构的诸如CoFe和Cu的材料作为上层。 结果，TMR传感器中的上覆层将变得更平滑，并且观察到较少的引脚分散。 相对于具有常规Ta / Ru种子层构型的MTJ，Hex / Hc比增加。 当IrMn AFM层在其上生长时，三层种子构型特别有效，从而在覆盖的被钉扎层和自由层之间降低了Hin。 NiFe或NiFeX中间层的Ni含量在30原子％以上，优选为80原子％以上。

    Magnetic memory cell
    88.
    发明申请
    Magnetic memory cell 有权
    磁记忆体

    公开(公告)号：US20080219042A1

    公开(公告)日：2008-09-11

    申请号：US11715097

    申请日：2007-03-07

    申请人： Hui-Chuan Wang ,  Tong Zhao ,  Kunliang Zhang ,  Min Li

    发明人： Hui-Chuan Wang ,  Tong Zhao ,  Kunliang Zhang ,  Min Li

    IPC分类号： G11C11/16

    CPC分类号： G11C11/15

    摘要： By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserting a surfactant layer (typically oxygen) within the free layer.

    摘要翻译： 通过在MTJ或GMR存储器单元的自由层内插入自旋偏振层（通常为纯铁），可以改善dR / R，而不显着影响其它自由层性质如Hc。 还可以通过在自由层内插入表面活性剂层（通常为氧）来实现另外的性能改进。