公开(公告)号：US6009827A

公开(公告)日：2000-01-04

申请号：US740969

申请日：1996-11-05

申请人： Stuardo Robles ,  Visweswaren Sivaramakrishnan ,  Maria Galiano ,  Victoria Kithcart

发明人： Stuardo Robles ,  Visweswaren Sivaramakrishnan ,  Maria Galiano ,  Victoria Kithcart

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/316 ,  H05H1/00 ,  C23C16/00

CPC分类号： C23C16/45561 ,  C23C16/402 ,  C23C16/45557 ,  C23C16/52 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： A method and apparatus for ramping down the deposition pressure in a SACVD process. The present invention also provides a method and apparatus for subsequently ramping up the pressure for a PECVD process in such a manner as to prevent unwanted reactions which could form a weak interlayer interface. In particular, the deposition pressure in the SACVD process is ramped down by stopping the flow of the silicon containing gas (preferably TEOS) and/or the carrier gas (preferably helium), while diluting the flow of ozone with oxygen. A ramp down of the pressure starts at the same time. The diluting of the ozone with oxygen limits reactions with undesired reactants at the end of a process.

摘要翻译： 一种用于在SACVD工艺中降低沉积压力的方法和装置。 本发明还提供一种随后使PECVD工艺的压力升高的方法和装置，以防止可能形成弱层间界面的不希望的反应。 特别地，SACVD工艺中的沉积压力通过停止含硅气体（优选TEOS）和/或载气（优选氦气）的流动，同时用氧气稀释臭氧流而降低。 压力的下降开始于同一时间。 用氧气稀释臭氧会在过程结束时限制与不需要的反应物的反应。

公开(公告)号：US5725675A

公开(公告)日：1998-03-10

申请号：US632877

申请日：1996-04-16

申请人： Gary L. Fong ,  Vincente Lim ,  Visweswaren Sivaramakrishnan

发明人： Gary L. Fong ,  Vincente Lim ,  Visweswaren Sivaramakrishnan

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/321 ,  C23C16/455 ,  H01J37/3244

摘要： A method and apparatus is provided to prevent energy transfer to a gas which is flown through a gas line disposed between a biased member and grounded member. In one aspect of the invention, a semi-conductive sleeve, such as a silicon carbide sleeve, is provided which is disposed about a gas line and is in contact with the gas inlet manifold and the gas outlet manifold and has a resistance less than that of the gas which is flown through the gas line.

摘要翻译： 提供了一种方法和装置，以防止能量传递到流过设置在偏置构件和接地构件之间的气体管线的气体。 在本发明的一个方面中，提供半导电套筒，例如碳化硅套筒，其设置在气体管线周围并且与气体入口歧管和气体出口歧管接触并且具有小于该阻力的电阻 的气体流过气体管线。

公开(公告)号：US5648175A

公开(公告)日：1997-07-15

申请号：US601558

申请日：1996-02-14

申请人： Kathleen Russell ,  Stuardo Robles ,  Bang C. Nguyen ,  Visweswaren Sivaramakrishnan

发明人： Kathleen Russell ,  Stuardo Robles ,  Bang C. Nguyen ,  Visweswaren Sivaramakrishnan

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/54 ,  H01L21/316 ,  B32B9/00 ,  B05C11/00

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31625

摘要： A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.

摘要翻译： 提供了一种将氧化硅层沉积到晶片或衬底上的方法和装置。 本方法包括向处理室中引入包括硅，氧，硼，磷和锗的工艺气体，以形成具有小于800℃的回流温度的锗掺杂的BPSG氧化物层。本方法的优选实施方案在 低压CVD或等离子体增强CVD处理装置。

公开(公告)号：US5645642A

公开(公告)日：1997-07-08

申请号：US626954

申请日：1996-04-03

申请人： Hiroshi Nishizato ,  Visweswaren Sivaramakrishnan ,  Jun Zhao

发明人： Hiroshi Nishizato ,  Visweswaren Sivaramakrishnan ,  Jun Zhao

IPC分类号： C23C16/448 ,  C23C16/52 ,  G05D7/06 ,  G05D11/13 ,  C23C16/00

CPC分类号： G05D7/0658 ,  C23C16/4481 ,  C23C16/52 ,  G05D11/135

摘要： The flow of a liquid reagent gas into a vapor deposition process chamber is adjusted in response to control information provided by a process controller. The controller executes a prescribed mathematical algorithm which utilizes first and second steady-state pressure differentials. The first pressure differential is measured during the flowing of a carrier gas into the chamber. The second pressure differential is measured after the release of the liquid reagent into the chamber.

摘要翻译： 响应于由过程控制器提供的控制信息来调节液体反应气体进入气相沉积处理室的流动。 控制器执行使用第一和第二稳态压力差的规定的数学算法。 在载气流入腔室期间测量第一压力差。 在将液体试剂释放到室中后测量第二压力差。