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    PATTERNING PROCESS
    84.
    发明申请
    PATTERNING PROCESS 审中-公开
    绘图过程

    公开(公告)号：US20100086878A1

    公开(公告)日：2010-04-08

    申请号：US12575097

    申请日：2009-10-07

    申请人： Jun Hatakeyama ,  Masashi Iio ,  Takeru Watanabe ,  Takeshi Kinsho ,  Toshinobu Ishihara

    发明人： Jun Hatakeyama ,  Masashi Iio ,  Takeru Watanabe ,  Takeshi Kinsho ,  Toshinobu Ishihara

    IPC分类号： G03F7/20

    CPC分类号： G03F7/405 ,  G03F7/0035 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338

    摘要： A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half.

    摘要翻译： 通过将第一正性抗蚀剂材料施加到基底上，热处理，暴露于高能量辐射，热处理，然后用显影剂显影以形成第一抗蚀剂图案，形成图案; 将包含具有氨基的可水解硅化合物的保护涂层溶液施加到第一抗蚀剂图案和基底上，加热形成保护涂层; 并在其上施加第二正性抗蚀剂材料，热处理，暴露于高能量辐射，热处理，然后用显影剂显影以形成第二抗蚀剂图案。 通过在第一图案的空间部分中形成第二图案，该双重图案将图案间距减小到一半。

    Resist composition and patterning process
    85.
    发明申请
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US20100009299A1

    公开(公告)日：2010-01-14

    申请号：US12457192

    申请日：2009-06-03

    申请人： Satoshi Watanabe ,  Akinobu Tanaka ,  Takeru Watanabe ,  Takeshi Kinsho

    发明人： Satoshi Watanabe ,  Akinobu Tanaka ,  Takeru Watanabe ,  Takeshi Kinsho

    IPC分类号： G03F7/00 ,  C07C229/00

    CPC分类号： G03F7/0045 ,  G03F7/0382 ,  Y10S430/114 ,  Y10S430/128

    摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

    摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。

    Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process
    86.
    发明授权
    Fluorine-containing silicon compounds, silicone resins, resist compositions, and patterning process 有权
    含氟硅化合物，硅树脂，抗蚀剂组合物和图案化工艺

    公开(公告)号：US07485408B2

    公开(公告)日：2009-02-03

    申请号：US11713709

    申请日：2007-03-05

    申请人： Takeshi Kinsho ,  Mutsuo Nakashima ,  Koji Hasegawa ,  Takeru Watanabe

    发明人： Takeshi Kinsho ,  Mutsuo Nakashima ,  Koji Hasegawa ,  Takeru Watanabe

    IPC分类号： G03C1/73 ,  G03F7/075 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0757 ,  C07F7/1804 ,  G03F7/0045 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108

    摘要： Fluorine-containing silicon compounds having the general formula (1): wherein X1, X2, and X3 each are hydrogen, hydroxyl, halogen, a straight, branched or cyclic alkoxy group of 1 to 6 carbon atoms, or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, Y is a divalent organic group, R1 and R2 are each independently hydrogen or a monovalent organic group of 1 to 20 carbon atoms having a straight, branched, cyclic or polycyclic skeleton, or R1 and R2 may bond together to form a ring with the carbon atom to which they are attached silicone resins obtained from the compounds of formula (1) has an appropriate acidity to enable formation of a finer pattern while minimizing the pattern collapse by swelling when used in a resist composition.

    摘要翻译： 具有通式（1）的含氟硅化合物：其中X 1，X 2和X 3各自为氢，羟基，卤素，1至6个碳原子的直链，支链或环状烷氧基或1价有机基团1 具有直链，支链，环状或多环骨架的20个碳原子，Y为二价有机基团，R 1和R 2各自独立地为氢或具有直链，支链，环状或多环骨架的1〜20个碳原子的一价有机基团 ，或者R 1和R 2可以键合在一起形成与它们所连接的碳原子一起形成的环。由式（1）化合物获得的有机硅树脂具有适当的酸度以使得形成更精细的图案同时最小化图案由于膨胀膨胀 当用于抗蚀剂组合物时。

    Alicyclic methacrylate having oxygen substituent group on α-methyl
    90.
    发明授权
    Alicyclic methacrylate having oxygen substituent group on α-methyl 有权
    在α-甲基上具有氧取代基的脂环族甲基丙烯酸酯

    公开(公告)号：US07041846B2

    公开(公告)日：2006-05-09

    申请号：US10791843

    申请日：2004-03-04

    申请人： Takeru Watanabe ,  Jun Hatakeyama ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Jun Hatakeyama ,  Takeshi Kinsho

    IPC分类号： C07C69/74 ,  C07C69/75 ,  C07C69/753

    CPC分类号： C07D307/93 ,  C07C69/732 ,  C07C69/734 ,  C07C2601/08 ,  C07C2603/68 ,  C07C2603/74 ,  G03F7/0397

    摘要： Alicyclic methacrylate compounds having an oxygen substituent group on their α-methyl group, represented by formula (1), are novel wherein R1 is H or C1–C10 alkyl which may contain a halogen atom, hydroxyl group, ether bond, carbonyl group, carboxyl group or cyano group, and R2 is a monovalent C3–C20 organic group having an alicyclic structure. Polymers prepared from these alicyclic methacrylate compounds have improved transparency, especially at the exposure wavelength of an excimer laser, and improved dry etching resistance. Resist compositions comprising the polymers are sensitive to high-energy radiation, show a high resolution, allow smooth development, lend themselves to micropatterning, and are thus suitable as micropatterning material for VLSI fabrication

    摘要翻译： 由式（1）表示的在其α-甲基上具有氧取代基的脂环族甲基丙烯酸酯化合物是新的，其中R 1是H或C 1 -C 3 可以含有卤素原子，羟基，醚键，羰基，羧基或氰基的烷基，R 2是一价C 3〜 具有脂环结构的-C 20官能团。 由这些脂环族甲基丙烯酸酯化合物制备的聚合物具有改善的透明度，特别是在准分子激光的曝光波长下，以及改进的耐干蚀刻性。 包含聚合物的抗蚀剂组合物对高能辐射敏感，显示高分辨率，允许平滑显影，适合于微图案化，因此适用于VLSI制造的微图案材料