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公开(公告)号：US08168367B2
公开(公告)日：2012-05-01
申请号：US12457192
申请日：2009-06-03
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或胺氧化物的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。
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公开(公告)号：US20100009299A1
公开(公告)日：2010-01-14
申请号：US12457192
申请日：2009-06-03
IPC分类号： G03F7/00 , C07C229/00
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。
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公开(公告)号：US08592133B2
公开(公告)日：2013-11-26
申请号：US13427621
申请日：2012-03-22
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。
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公开(公告)号：US08586282B2
公开(公告)日：2013-11-19
申请号：US13427653
申请日：2012-03-22
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
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5.发明授权公开(公告)号：US08877422B2
公开(公告)日：2014-11-04
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种 更多种由下列通式（2）表示的化合物和/或其等价物。 可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性， 抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。
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6.发明授权Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process 有权抗蚀剂下层膜形成组合物，形成抗蚀剂下层膜的工艺和图案化工艺公开(公告)号：US08603732B2
公开(公告)日：2013-12-10
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译： 公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过 酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。 在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止 在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。
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7.发明申请公开(公告)号：US20120064725A1
公开(公告)日：2012-03-15
申请号：US13227754
申请日：2011-09-08
IPC分类号： H01L21/311 , C08G8/02 , G03F7/004 , H01L21/31
摘要： A naphthalene derivative having formula (1) is provided wherein An and Art denote a benzene or naphthalene ring, and n is such a natural number as to provide a weight average molecular weight of up to 100,000. A material comprising the naphthalene derivative or a polymer comprising the naphthalene derivative is spin coated to form a resist bottom layer having improved properties. A pattern forming process in which a resist bottom layer formed by spin coating is combined with an inorganic hard mask formed by CVD is available.
摘要翻译： 提供式（1）的萘衍生物，其中An和Art表示苯或萘环，n是这样的自然数，以提供高达100,000的重均分子量。 包含萘衍生物或包含萘衍生物的聚合物的材料被旋涂以形成具有改进性能的抗蚀剂底层。 通过旋涂形成的抗蚀剂底层与通过CVD形成的无机硬掩模组合的图案形成方法是可用的。
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公开(公告)号：US20110183262A1
公开(公告)日：2011-07-28
申请号：US13013143
申请日：2011-01-25
申请人： Wataru Kusaki , Takeshi Kinsho , Takeru Watanabe
发明人： Wataru Kusaki , Takeshi Kinsho , Takeru Watanabe
CPC分类号： G03F7/0397 , G03F7/2041
摘要： A positive resist composition is provided comprising an acid generator, a resin component which generates resin-solubilizing groups under the action of acid so that the resin component becomes soluble in an alkaline developer, at least some resin-solubilizing groups being carboxyl groups, and a compound for activating or condensing a carboxyl group. When processed by the lithography, the resist composition forms a resist pattern having a very high resolution and good mask fidelity.
摘要翻译： 提供了一种正性抗蚀剂组合物，其包含酸产生剂，在酸的作用下产生树脂增溶基团的树脂组分，使得树脂组分变得可溶于碱性显影剂，至少一些树脂增溶基团为羧基， 用于活化或缩合羧基的化合物。 当通过光刻处理时，抗蚀剂组合物形成具有非常高的分辨率和良好的掩模保真度的抗蚀剂图案。
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9.发明授权Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US07919226B2
公开(公告)日：2011-04-05
申请号：US12222645
申请日：2008-08-13
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： C07C309/12 , C07C381/12 , C07D307/64 , C07D307/68 , C07D333/46 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有式：CF 3 -CH（OCOR）-CF 2 SO 3 -M +，其中R是C 1 -C 20烷基或C 6 -C 14芳基，M +是锂，钠，钾，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。
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公开(公告)号：US20100297563A1
公开(公告)日：2010-11-25
申请号：US12785930
申请日：2010-05-24
申请人： Takeru Watanabe , Kazuhiro Katayama , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
发明人： Takeru Watanabe , Kazuhiro Katayama , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Takeshi Kinsho
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273
摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.
摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环，和醇类溶剂。
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