-
公开(公告)号：US20100009299A1
公开(公告)日：2010-01-14
申请号：US12457192
申请日：2009-06-03
IPC分类号： G03F7/00 , C07C229/00
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。
-
公开(公告)号：US08168367B2
公开(公告)日：2012-05-01
申请号：US12457192
申请日：2009-06-03
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或胺氧化物的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。
-
公开(公告)号：US08592133B2
公开(公告)日：2013-11-26
申请号：US13427621
申请日：2012-03-22
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译： 本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻 采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。 本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或氧化胺的氮原子的那些） 并且不具有与氮原子共价键合的氢原子作为碱性中心。
-
公开(公告)号：US08586282B2
公开(公告)日：2013-11-19
申请号：US13427653
申请日：2012-03-22
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
-
5.发明授权Chemically-amplified positive resist composition and patterning process thereof 有权化学扩增的正型抗蚀剂组合物及其构图工艺公开(公告)号：US08202677B2
公开(公告)日：2012-06-19
申请号：US12457327
申请日：2009-06-08
CPC分类号： G03F7/0395 , G03F7/0045 , G03F7/0392 , Y10S430/114
摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.
摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。
-
公开(公告)号：US06605408B2
公开(公告)日：2003-08-12
申请号：US09832919
申请日：2001-04-12
IPC分类号： C08F200
CPC分类号： G03F7/0395 , C08G61/06 , C08G61/08 , G03F7/0397
摘要： A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.
-
公开(公告)号：US06703183B2
公开(公告)日：2004-03-09
申请号：US10241530
申请日：2002-09-12
IPC分类号： G03F7004
CPC分类号： C08F220/18 , G03F7/0397
摘要： A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 包含式（1）和（2）的重复单元的聚合物，其中R 1和R 3为H或甲基，R 2和R 4为C 1-15烷基，R 5为R 新颖的是H或R 5和R 7，并且R 6和R 8形成三亚甲基或1,3-亚环戊基并具有1,000-500,000的Mw。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。
-
公开(公告)号：US06830866B2
公开(公告)日：2004-12-14
申请号：US10170345
申请日：2002-06-14
申请人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7038
CPC分类号： G03F7/0392 , C08G61/06 , G03F7/0395 , G03F7/0397
摘要： A resist composition comprising a hydrogenated product of ring-opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance, and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译： 包含开环易位聚合物和聚（甲基）丙烯酸衍生物作为基础树脂的氢化产物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于微图案化 电子束或深紫外线。
-
9.发明授权Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process 有权锍盐，聚合物，聚合物的制造方法，抗蚀剂组合物和图案化工艺公开(公告)号：US08691490B2
公开(公告)日：2014-04-08
申请号：US13013506
申请日：2011-01-25
IPC分类号： G03F7/004 , C07C69/54 , C07C309/67
CPC分类号： C07C69/54 , C08F220/38 , G03F7/004 , G03F7/20
摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.
摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。
-
10.发明授权Sulfonium salt, acid generator, resist composition, photomask blank, and patterning process 有权锍盐，酸发生剂，抗蚀剂组合物，光掩模坯料和图案化工艺公开(公告)号：US08394570B2
公开(公告)日：2013-03-12
申请号：US12630559
申请日：2009-12-03
IPC分类号： G03F1/00 , G03F7/00 , C07C309/00
CPC分类号： C07J3/00 , C07C309/12 , C07C381/12 , C07C2601/14 , C07C2603/74 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0397
摘要： A sulfonium salt has formula (1) wherein R1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R2, R3, and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.
摘要翻译： 锍盐具有式（1），其中R 1是除乙烯基和异丙烯基之外的一价烃基，R 2，R 3和R 4是烷基，烯基，氧代烷基，芳基，芳烷基或芳氧基烷基，或者可以键合在一起形成与硫原子的环 ，并且n为1至3.包含锍盐的化学放大抗蚀剂组合物由于高分辨率，改善的焦点纬度以及在延长的PED处的线宽变化和轮廓退化最小化而能够在显影后形成良好轮廓的精细特征图案 。
-
-
-
-
-
-
-
-
-
搜索结果
385 条记录 (耗时 0.035 秒)