公开(公告)号：US5414451A

公开(公告)日：1995-05-09

申请号：US958162

申请日：1992-10-08

申请人： Hisataka Sugiyama ,  Takeshi Maeda ,  Kiyoshi Matsumoto ,  Motoyasu Terao ,  Shigenori Okamine ,  Tetsuya Nishida ,  Harukazu Miyamoto

发明人： Hisataka Sugiyama ,  Takeshi Maeda ,  Kiyoshi Matsumoto ,  Motoyasu Terao ,  Shigenori Okamine ,  Tetsuya Nishida ,  Harukazu Miyamoto

IPC分类号： G11B7/00 ,  G11B7/007 ,  G11B7/003 ,  G11B7/004 ,  G11B7/0065 ,  G11B7/09 ,  G11B7/135 ,  G11B7/14 ,  G11B7/20 ,  G11B7/24 ,  B41J2/435

CPC分类号： G11B7/004 ,  G11B7/1372 ,  G11B7/14 ,  G11B7/24 ,  G11B7/24038

摘要： In a three-dimensional recording and reproducing apparatus having a recording medium including a plurality of recording layers stacked on a substrate and an optical system for converging a light irradiated from the substrate side on each of the plurality of recording layers to three-dimensionally record and reproduce information, the following equation is satisfied:.lambda./4.ltoreq.(1/8/NB)(1 /NB.sup.2 -1)NAF.sup.4 .DELTA.dwhere.lambda.: Wavelength of the light;NB: Refractivity of the substrate;NAF: Numerical aperture of a focus lens for converging a light;.DELTA.d: Positional range in the optical axis direction in which exists a recording layer on which the light is to be converged.A light spot is focused on each layer of the multi-layer structured disc to record and reproduce highly reliable data in a high density.

摘要翻译： 在具有堆叠在基板上的多个记录层的记录介质的三维记录和再现装置和用于会聚从多个记录层中的每一个记录层上的基板侧照射的光的光学系统进行三维记录和 再现信息，满足以下等式：λ/ 4

公开(公告)号：US5038338A

公开(公告)日：1991-08-06

申请号：US598811

申请日：1990-10-17

申请人： Motoyasu Terao ,  Tetsuya Nishida ,  Hiroshi Yasuoka ,  Keikichi Andoo ,  Norio Ohta

发明人： Motoyasu Terao ,  Tetsuya Nishida ,  Hiroshi Yasuoka ,  Keikichi Andoo ,  Norio Ohta

IPC分类号： G11B9/10 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/0055 ,  G11B7/125 ,  G11B7/24 ,  G11B7/30

CPC分类号： G11B7/00557 ,  G11B7/24

摘要： A method of recording information by changing a recording medium through irradiation with an energy beam such as a light beam, electron beam or the like. A single pulse or a plurality of pulses are employed for forming recorded dots. The pulse has a pulse width shorter than a time required for the center of energy beam spot to move from one to other end of the dot upon recording thereof. By virtue of the possibility of reversible change even in a recording film susceptible to high rate speed of change, the rate of information transfer can be increased. Overwrite recording can also be accomplished with the single laser beam. An increased amount of information can be handled in the recording and reproduction.

摘要翻译： 通过用诸如光束，电子束等能量束的照射改变记录介质来记录信息的方法。 单脉冲或多脉冲用于形成记录点。 脉冲的脉冲宽度短于在记录时能量束点的中心从点到另一端移动所需的时间。 由于即使在容易受高速率变化的记录膜影响的情况下也可能发生可逆变化，所以可以提高信息传送速度。 也可以用单个激光束实现覆盖记录。 在记录和再现中可以处理增加的信息量。

公开(公告)号：US4984231A

公开(公告)日：1991-01-08

申请号：US147362

申请日：1988-01-22

申请人： Hiroshi Yasuoka ,  Norio Murase ,  Motoyasu Terao ,  Tetsuya Nishida ,  Keikichi Andoo ,  Masahiro Ojima

发明人： Hiroshi Yasuoka ,  Norio Murase ,  Motoyasu Terao ,  Tetsuya Nishida ,  Keikichi Andoo ,  Masahiro Ojima

IPC分类号： B41M5/26 ,  G11B7/24

CPC分类号： G11B7/2403 ,  Y10S430/146

摘要： An optical information recording carrier which comprises an information recording film susceptible to a change in atomic arrangement upon exposure to a recording beam, a first transparent film for preventing diffusion of heat generated in the recording film upon exposure to the recording beam and provided on each side of the recording film, a second transparent film for diffusing the heat in the in-plane direction of the film and provided on at least one outside thereof, and an organic member further provided on at least one outside thereof, the recording beam being irradiated onto the recording film through the organic member has distinguished characteristics of repeated recordings and erasings.

摘要翻译： 一种光学信息记录载体，其包括在暴露于记录光束时容易发生原子排列变化的信息记录膜;第一透明膜，用于防止在暴露于记录光束时在记录膜中产生的热的扩散并且设置在每一侧 记录膜的第二透明膜，用于在膜的面内方向上扩散热量并设置在其至少一个外部的第二透明膜，以及还设置在其至少一个外部的有机部件，所述记录光束照射到 通过有机构件的记录膜具有重复记录和擦除的特征。

公开(公告)号：US08618523B2

公开(公告)日：2013-12-31

申请号：US12302740

申请日：2006-05-31

申请人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

发明人： Norikatsu Takaura ,  Yuichi Matsui ,  Motoyasu Terao ,  Yoshihisa Fujisaki ,  Nozomu Matsuzaki ,  Kenzo Kurotsuchi ,  Takahiro Morikawa

IPC分类号： H01L47/00

CPC分类号： G11C13/0004 ,  G11C8/08 ,  G11C13/0028 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： On an insulating film (41) in which a plug (43) as a lower electrode is embedded, a laminated layer pattern of an insulating film (51) made of tantalum oxide, a recording layer (52) made of Ge—Sb—Te based chalcogenide to which indium is introduced and an upper electrode film (53) made of tungsten or tungsten alloy is formed, thereby forming a phase change memory. By interposing the insulating film (51) between the recording layer (52) and the plug (43), an effect of reducing programming current of a phase change memory and an effect of preventing peeling of the recording layer (52) can be achieved. Further, by using the Ge—Sb—Te based chalcogenide to which indium is introduced as the recording layer (52), the difference in work function between the insulating film (51) and the recording layer (52) is increased, and the programming voltage of the phase change memory can be reduced.

摘要翻译： 在嵌入作为下电极的插头（43）的绝缘膜（41）上，由氧化钽构成的绝缘膜（51）的叠层图案，由Ge-Sb-Te制成的记录层（52） 引入铟的硫属化合物和由钨或钨合金制成的上电极膜（53），从而形成相变存储器。 通过将绝缘膜（51）插入在记录层（52）和插塞（43）之间，可以实现降低相变存储器的编程电流的效果和防止记录层（52）的剥离的效果。 此外，通过使用引入了铟的Ge-Sb-Te类硫族化物作为记录层（52），绝缘膜（51）和记录层（52）之间的功函数差增大，编程 可以减小相变存储器的电压。

公开(公告)号：US08132063B2

公开(公告)日：2012-03-06

申请号：US13191442

申请日：2011-07-26

申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

IPC分类号： G11C29/00

CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。

公开(公告)号：US20110292722A1

公开(公告)日：2011-12-01

申请号：US13207611

申请日：2011-08-11

申请人： SATORU HANZAWA ,  Hitoshi Kume ,  Motoyasu Terao ,  Tomonori Sekiguchi ,  Makoto Saen

发明人： SATORU HANZAWA ,  Hitoshi Kume ,  Motoyasu Terao ,  Tomonori Sekiguchi ,  Makoto Saen

IPC分类号： G11C11/00

CPC分类号： G01R31/31715 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2213/71 ,  G11C2213/72 ,  Y10T29/49169

摘要： A highly reliable large capacity phase change memory module is realized. A semiconductor device according to the present invention includes a memory array having a structure in which a storage layer using a chalcogcnidc material and a memory cell constituted of a diode are stacked, and an initialization condition and a rewriting condition are changed in accordance with the layer where a selected memory cell is located. A current mirror circuit is selected in accordance with an operation, and at the same time, the initialization condition and the rewriting condition (here, reset condition) are changed in accordance with the operation by a control mechanism of the reset current in a voltage selection circuit and a current mirror circuit.

摘要翻译： 实现了高度可靠的大容量相变存储器模块。 根据本发明的半导体器件包括存储阵列，该存储器阵列具有堆叠使用了电阻元件的存储层和由二极管构成的存储单元的结构，并且根据层来改变初始化条件和重写条件 其中所选择的存储器单元被定位。 根据操作选择电流镜电路，并且同时根据电压选择中的复位电流的控制机构的操作来改变初始化条件和重写条件（这里为复位条件） 电路和电流镜电路。

公开(公告)号：US08000126B2

公开(公告)日：2011-08-16

申请号：US12522744

申请日：2007-01-11

申请人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

发明人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi ,  Nozomu Matsuzaki ,  Yoshihisa Fujisaki ,  Masaharu Kinoshita ,  Yuichi Matsui

IPC分类号： G11C11/00 ,  H01L29/66

CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

摘要： A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.

摘要翻译： 相变存储器由形成在半导体衬底上的绝缘膜中的埋入通孔内的插塞形成，形成在绝缘膜上的界面层，其中埋入插塞，由硫化物层形成的记录层形成在 界面层和形成在记录层上的上接触电极。 根据电阻值变化存储信息的记录层由含有20原子％至38原子％的量的铟的含量为9原子％至28原子％的锗的硫属化物材料制成，3原子级的锑 ％〜18原子％，碲为42原子％〜63原子％，锗的含量大于或等于锑的含量。

公开(公告)号：US07638786B2

公开(公告)日：2009-12-29

申请号：US11272811

申请日：2005-11-15

申请人： Yuichi Matsui ,  Motoyasu Terao ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Naoki Yamamoto

发明人： Yuichi Matsui ,  Motoyasu Terao ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Naoki Yamamoto

IPC分类号： H01L29/02

CPC分类号： C23C14/5806 ,  C23C14/0623 ,  C23C14/541 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1641

摘要： The annealing process at 400° C. or more required for the wiring process for a phase change memory has posed the problem in that the crystal grains in a chalcogenide material grow in an oblique direction to cause voids in a storage layer. The voids, in turn, cause peeling due to a decrease in adhesion, variations in resistance due to improper contact with a plug, and other undesirable events. After the chalcogenide material has been formed in an amorphous phase, post-annealing is conducted to form a (111)-oriented and columnarly structured face-centered cubic. This is further followed by high-temperature annealing to form a columnar, hexagonal closest-packed crystal. Use of this procedure makes it possible to suppress the growth of inclined crystal grains that causes voids, since crystal grains are formed in a direction perpendicular to the surface of an associated substrate.

摘要翻译： 在相变存储器的布线处理所需的400℃以上所需的退火处理的问题在于，硫属化物材料中的晶粒沿倾斜方向生长，从而在储存层中产生空隙。 这些空隙又由于粘合力的降低而导致剥离，由于与插头的不正确接触导致的电阻变化以及其它不期望的事件。 在非晶态形成硫族化物材料之后，进行后退火以形成（111）取向和柱状结构的面心立方。 此后进一步进行高温退火以形成柱状，六边形最接近填充的晶体。 使用该方法可以抑制由于在垂直于相关衬底的表面的方向上形成晶粒而导致空隙的倾斜晶粒的生长。

公开(公告)号：US20090302293A1

公开(公告)日：2009-12-10

申请号：US12094403

申请日：2006-11-14

申请人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi

发明人： Takahiro Morikawa ,  Motoyasu Terao ,  Norikatsu Takaura ,  Kenzo Kurotsuchi

IPC分类号： H01L27/105 ,  H01L45/00

CPC分类号： H01L27/2463 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

摘要： On the same semiconductor substrate 1, a memory cell array in which a plurality of memory elements R having a chalcogenide-material storage layer 22 storing a high-resistance state with a high electric resistance value and a low-resistance state with a low electric resistance value by a change of an atom arrangement are disposed in a matrix is formed in a memory cell region mmry, and a semiconductor integrated circuit is formed in a logic circuit region lgc. This chalcogenide-material storage layer 22 is made of a chalcogenide material containing at least either one of Ga or In of 10.5 atom % or larger to 40 atom % or smaller, Ge of 5 atom % or larger to 35 atom % or smaller, Sb of 5 atom % or larger to 25 atom % or smaller, and Te of 40 atom % or larger to 65 atom % or smaller.

摘要翻译： 在相同的半导体衬底1上，存储单元阵列，其中具有存储具有高电阻值的高电阻状态的硫族化物材料存储层22的多个存储元件R和具有低电阻的低电阻状态 在存储单元区域mmry中形成以矩阵形式设置的原子排列变化的值，在逻辑电路区域lgc中形成半导体集成电路。 该硫属化物材料储存层22由含有10.5原子％以上至40原子％以下的Ga或In中的至少任一种的硫属元素化物构成，5原子％以上且35原子％以下的Ge，Sb 为5原子％以上且25原子％以下，Te为40原子％以上且65原子％以下。

公开(公告)号：US20090250680A1

公开(公告)日：2009-10-08

申请号：US12487492

申请日：2009-06-18

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Motoyasu Terao ,  Kenzo Kurotsuchi ,  Tsuyoshi Yamauchi

IPC分类号： H01L47/00

CPC分类号： H01L27/2436 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

摘要： With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a phase change material layer of a memory cell comprising a resistor element, using a phase change material, is formed for common use. As a result, variation in shape and a change in composition of the phase change material, caused by isolation of memory cell elements by etching, are reduced, thereby enhancing reliability of memory cells, in respect of the number of refresh times.

摘要翻译： 通过高速非易失性相变存储器，提高了刷新次数的可靠性。 在使用MISFET作为选择存储单元的晶体管的相变存储器的存储单元形成区域中，形成了使用相变材料的包括电阻元件的存储单元的相变材料层，用于常用。 结果，减少了通过蚀刻对存储单元元件的隔离而导致的相变材料的形状变化和组成变化，从而提高了存储单元的刷新次数的可靠性。