公开(公告)号：US06686215B2

公开(公告)日：2004-02-03

申请号：US09820139

申请日：2001-03-28

申请人： Tsutomu Yamada

发明人： Tsutomu Yamada

IPC分类号： H01L2100

CPC分类号： H01L27/1288 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L2251/558

摘要： An emissive element layer (65) composed of an organic compound is formed on an anode (61) of an organic EL element or the like, using an evaporation mask (150) in which the width d of an opening (151) and the thickness h of the mask (150) satisfy the relationship h>n×d, Where n>1, and more preferably 1

摘要翻译： 在有机EL元件等的阳极（61）上，使用其中开口（151）的宽度d和厚度（151）的蒸发掩模（150）形成由有机化合物构成的发射元件层（65） 掩模（150）的h满足关系h> nxd，其中n≥1，更优选1

公开(公告)号：US06613618B1

公开(公告)日：2003-09-02

申请号：US09542200

申请日：2000-04-04

申请人： Shiro Nakanishi ,  Tsutomu Yamada

发明人： Shiro Nakanishi ,  Tsutomu Yamada

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are formed over the transparent substrate. A polycrystalline silicon film, being a semiconductor film, is formed acting as an active region. A stopper is formed on the polycrystalline silicon film corresponding to the gate electrode. A silicon oxide film and a silicon nitride film, acting as an interlayer insulating film, are deposited as to cover the stopper region. The total film thickness T1 of the stopper and the silicon oxide film is formed to be thinner than (the thickness T2 of the silicon nitride film×8000 Å)½. This structure allows hydrogen atoms to be sufficiently supplied from the silicon nitride film into the polycrystalline silicon film via the stopper and the silicon oxide film, so that crystalline defects in the polycrystalline silicon film can be filled with the hydrogen atoms.

摘要翻译： 提供了薄膜晶体管，其中绝缘膜的厚度被优化。 在透明基板上形成栅电极。 在透明基板上形成用作栅极绝缘膜的氮化硅膜和氧化硅膜。 作为半导体膜的多晶硅膜被形成为起主动区域的作用。 在与栅电极相对应的多晶硅膜上形成止动件。 作为层间绝缘膜的氧化硅膜和氮化硅膜被沉积以覆盖阻挡区域。 阻挡层和氧化硅膜的总膜厚T1形成为比（氮化硅膜的厚度T2）薄。 这种结构使得氢原子能够通过阻挡层和氧化硅膜从氮化硅膜充分供给到多晶硅膜中，从而可以用氢原子填充多晶硅膜中的晶体缺陷。

公开(公告)号：US06522079B1

公开(公告)日：2003-02-18

申请号：US09672929

申请日：2000-09-28

申请人： Tsutomu Yamada

发明人： Tsutomu Yamada

IPC分类号： G09G310

CPC分类号： H01L27/3276

摘要： A single shared line (VLc) is provided as a power source line (VL) between two display pixels disposed adjoining each other in a row direction. Such a layout with the shared line (VLc) makes it possible to set the width of the shared line (VLc) equal to the sum of twice the width (Wd) of the power source line and the space (Ws) between the lines, even with the area of a single pixel is the same as in a conventional design. As a result, an increase in line resistance of the power source line can be suppressed, and variation in display luminance in accordance with the distance from a power source terminal due to a voltage drop can be reliably reduced.

摘要翻译： 提供单个共享线路（VLc）作为在行方向上彼此相邻布置的两个显示像素之间的电源线（VL）。 具有共享线路（VLc）的布局使得可以将共享线路（VLc）的宽度设置为等于电源线路宽度（Wd）和线路之间的空间（Ws）的两倍的总和， 即使单个像素的面积与常规设计中的相同。 结果，可以抑制电源线的线路电阻的增加，并且可以可靠地降低由于电压降引起的与电源端子的距离的显示亮度的变化。

公开(公告)号：US06469318B2

公开(公告)日：2002-10-22

申请号：US09966018

申请日：2001-09-28

申请人： Tsutomu Yamada ,  Katsuya Anzai

发明人： Tsutomu Yamada ,  Katsuya Anzai

IPC分类号： H01L2904

CPC分类号： H01L21/02686 ,  H01L21/02691 ,  H01L21/2026

摘要： Thin film transistors TFT2a and TFT2b for driving elements are formed in parallel between a power source line (16) and an organic EL element (60), and active layers (12) of the transistors TFT2a and TFT2b are spaced apart in a scanning direction of a laser used for annealing for polycrystallization. As a result, the annealing conditions for the transistors TFT2a and TFT2b will not be exactly the same, thereby reducing the chance of a same problem being caused in both transistors TFT2a and TFT2b.

摘要翻译： 在电源线（16）和有机EL元件（60）之间并联形成用于驱动元件的薄膜晶体管TFT2a和TFT2b，晶体管TFT2a和TFT2b的有源层（12）在扫描方向 用于多结晶退火的激光。 结果，晶体管TFT2a和TFT2b的退火条件将不完全相同，从而减少在晶体管TFT2a和TFT2b两者中引起相同问题的机会。

公开(公告)号：US06393509B2

公开(公告)日：2002-05-21

申请号：US09932973

申请日：2001-08-21

申请人： Tsutomu Yamada ,  Kenichi Kurosawa ,  Yasuo Kaminaga ,  Kouji Masui ,  Akihiro Ohashi

发明人： Tsutomu Yamada ,  Kenichi Kurosawa ,  Yasuo Kaminaga ,  Kouji Masui ,  Akihiro Ohashi

IPC分类号： G06F1300

CPC分类号： G06F13/4081 ,  G06F1/189 ,  Y02D10/14 ,  Y02D10/151

摘要： There is provided an input/output device having of not exerting any adverse influence on other expansion devices connected to a system bus at the time of insertion or removal. An expansion device 800 comprises an electronic circuit 400 and a MOS switch 300, and is connected to a system bus (BUS) via a connector having long and short pins. The expansion device 800 two power supply systems, namely a stable power supply 250 and an unstable power supply 260. At the time of insertion or removal of the expansion device 800, power is provided to the MOS switch 300 and a high impedance maintaining circuit from the stable power supply via a pair of long pins, so as to reliably place the MOS switch 300 in a high impedance state, inside the expansion device the high impedance maintaining circuit 350 drives an open/close control terminal, and power is provided to the electronic circuit 400 from the unstable power supply 260. At the time of insertion or removal, adverse influence is not exerted on the signal transmission on the system bus, and effects of load variation on the main power supply are reduced.

摘要翻译： 提供了一种输入/输出装置，其在插入或移除时对连接到系统总线的其它扩展装置没有任何不利影响。扩展装置800包括电子电路400和MOS开关300，并且被连接 通过具有长和短引脚的连接器连接到系统总线（BUS）。 膨胀装置800是两个电源系统，即稳定的电源250和不稳定的电源260.在插入或移除扩展装置800时，向MOS开关300提供电力和高阻抗保持电路 通过一对长引脚稳定供电，为了可靠地将MOS开关300置于高阻抗状态，高阻抗保持电路350在扩展装置的内部驱动开/关控制端子，并且向 来自不稳定电源260的电子电路400.在插入或移除时，不会对系统总线上的信号传输产生不利影响，并且降低对主电源的负载变化的影响。

公开(公告)号：US06274414B1

公开(公告)日：2001-08-14

申请号：US08911505

申请日：1997-08-14

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21324

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US06252248B1

公开(公告)日：2001-06-26

申请号：US09326288

申请日：1999-06-07

申请人： Keiichi Sano ,  Yasuo Segawa ,  Norio Tabuchi ,  Tsutomu Yamada

发明人： Keiichi Sano ,  Yasuo Segawa ,  Norio Tabuchi ,  Tsutomu Yamada

IPC分类号： H01L2904

CPC分类号： H01L29/78696 ,  G02F1/136227 ,  G02F1/1368 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78648

摘要： A gate electrode (2), a gate insulating film (3), and an active layer (4) made of a poly silicon film and having a source (5), a channel (7), and a drain (6) are formed on an insulating substrate (1) and an interlayer insulating film (9) is formed over the whole of the gate insulating film (3), the active layer (4), and a stopper insulating film (8). A drain electrode (10) is formed by filling a contact hole made in the interlayer insulating film (9), the position of which corresponds to the drain (6), with a metal, such as Al. Simultaneously with the drain electrode (10), a conductive layer (11) is formed on the interlayer insulating film (9) over the channel (7). The conductive layer (11) is connected to gate signal line G on the insulating substrate (1) via a contact hole (15) made in the gate insulating film (3) and the interlayer insulating film (9). The width of the conductive layer (11) along the length of the channel (7) is narrower than the actual length of the channel (7) and narrower than the width along the channel length of the gate electrode (2). The conductive layer (11) can therefore shield the channel (7). As a result, even if impurities or the like become attached to the surface of the interlayer insulating film (9), the occurrence of a back channel, for example, is reliably prevented.

摘要翻译： 形成栅极电极（2），栅极绝缘膜（3）和由多晶硅膜制成并具有源极（5），沟道（7）和漏极（6）的有源层（4） 在整个栅极绝缘膜（3），有源层（4）和阻挡绝缘膜（8）上形成绝缘基板（1）和层间绝缘膜（9）。 漏极电极（10）通过用金属（例如Al）填充其位置与漏极（6）相对应的层间绝缘膜（9）中形成的接触孔而形成。 与漏电极（10）同时，在沟道（7）上的层间绝缘膜（9）上形成导电层（11）。 导电层（11）通过栅极绝缘膜（3）和层间绝缘膜（9）中形成的接触孔（15）连接到绝缘基板（1）上的栅极信号线G. 导电层（11）沿着沟道（7）的长度的宽度比通道（7）的实际长度窄，并且窄于沿栅极电极（2）的沟道长度的宽度。 因此，导电层（11）可以屏蔽通道（7）。 结果，即使杂质等附着到层间绝缘膜（9）的表面，可以可靠地防止例如背面通道的发生。

公开(公告)号：US4987669A

公开(公告)日：1991-01-29

申请号：US477527

申请日：1990-02-09

申请人： Tatsumi Makimae ,  Tsutomu Yamada

发明人： Tatsumi Makimae ,  Tsutomu Yamada

IPC分类号： B25B23/14 ,  B25B23/151 ,  G05D17/02

CPC分类号： G05D17/02 ,  B25B23/14 ,  Y10T29/49767

摘要： In a method of tightening a screw member, the difference between the tightening axial force which is produced at the limit of elasticity when the friction coefficient between the screw member and a member into which the screw member is to be threaded is at a maximum and that when the friction coefficient between the screw member and the member into which the screw member is to be threaded is at a minimum is calculated, a seating torque is determined on the basis of the difference between the tightening axial forces, the screw member is threaded into the member into which the screw member is to be threaded until the tightening torque reaches the seating torque, and then the screw member is tightened by a predetermined angle.

摘要翻译： 在拧紧螺纹构件的方法中，当螺纹构件与螺纹构件所穿过的构件之间的摩擦系数达到最大时，在弹性极限下产生的紧固轴向力之间的差异最大， 当螺杆构件和螺纹构件要被螺纹连接的构件之间的摩擦系数被计算为最小时，基于紧固轴向力之间的差来确定就座扭矩，螺钉构件被拧入 螺纹构件要被螺纹连接的构件，直到紧固扭矩达到就座扭矩，然后将螺钉构件紧固预定角度。

公开(公告)号：US4462793A

公开(公告)日：1984-07-31

申请号：US404128

申请日：1982-08-02

申请人： Takuya Maeda ,  Tsutomu Yamada ,  Mitsuharu Kishimoto ,  Atsuyoshi Kubotani

发明人： Takuya Maeda ,  Tsutomu Yamada ,  Mitsuharu Kishimoto ,  Atsuyoshi Kubotani

IPC分类号： C22B5/10 ,  C21B13/08 ,  F27B7/02 ,  F27B7/34 ,  F27B7/36 ,  C21B13/00 ,  C21B11/06 ,  F27B15/00

CPC分类号： F27B7/34

摘要： This disclosure relates to a rotary kiln for heating and calcining lime, waste, etc. and to a method of direct reduction of metal oxide using such a kiln. A cylindrical outer shell is mounted for rotation on its axis, and a stationary inner tube extends into the interior of the shell. Fuel and/or combustion air flow passages extend within the tube, and burner nozzles are supported by the tube and are connected to the passages. The tube is concentrically or eccentrically mounted adjacent the upper side of the space within the shell, thereby positioning the burner nozzles at the optimum positions.

摘要翻译： 本公开涉及一种用于加热和煅烧石灰，废物等的回转窑以及使用这种窑直接还原金属氧化物的方法。 安装圆柱形外壳以在其轴线上旋转，并且固定的内管延伸到壳体的内部。 燃料和/或燃烧空气流通道在管内延伸，并且燃烧器喷嘴由管支撑并连接到通道。 管同心或偏心安装在壳体内的空间的上侧，从而将燃烧器喷嘴定位在最佳位置。

公开(公告)号：US4348225A

公开(公告)日：1982-09-07

申请号：US124229

申请日：1980-02-25

申请人： Takuya Maeda ,  Tsutomu Yamada ,  Mitsuharu Kishimoto

发明人： Takuya Maeda ,  Tsutomu Yamada ,  Mitsuharu Kishimoto

IPC分类号： C21B13/00 ,  C21B13/02 ,  C21B13/04

CPC分类号： C21B13/04 ,  C21B13/0086 ,  C21B13/02 ,  Y02P10/136

摘要： Static bed type iron oxide reducing apparatus comprises reduction furnaces and cooling chambers respectively associated with the furnaces. Iron oxides are charged into the furnaces and reducing gas is applied to the raw materials to carry out a reducing reaction. After the iron oxides in the furnace have been metallized to a sufficient level, they are transferred to the cooling chamber to be cooled therein.

摘要翻译： 静态床型氧化铁还原装置包括分别与炉相连的还原炉和冷却室。 将铁氧化物装入炉中，将还原气体施加到原料上以进行还原反应。 在炉中的铁氧化物已经被金属化到足够的水平之后，将它们转移到冷却室中以在其中冷却。