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229 条记录 (耗时 0.039 秒)

    Semiconductor memory device for detecting defective memory cells in a short time
    81.
    发明授权
    Semiconductor memory device for detecting defective memory cells in a short time 失效
    用于在短时间内检测有缺陷的记忆细胞的半导体存储器件

    公开(公告)号：US5241501A

    公开(公告)日：1993-08-31

    申请号：US598875

    申请日：1990-10-19

    申请人： Shinji Tanaka

    发明人： Shinji Tanaka

    IPC分类号： G11C29/00 ,  G11C11/401 ,  G11C29/02 ,  G11C29/34

    CPC分类号： G11C29/34 ,  G11C29/02

    摘要： A DRAM with a word line shifting circuit (6) is disclosed. In an externally specified test mode, a word line shifting circuit sequentially selects two word lines (WL.sub.i, WL.sub.i+1) A test data stored in a memory cell (101) is shifted through bit lines (BL, BL) to an adjacent other memory cell (102). This shifting operation is repeated between two adjacent memory cells. By comparing the repetitive shifted test data with the primarily supplied test data, the detection of whether or not a defective memory cell exists in the memory cell connected to the bit lines is accomplished in a short time.

    摘要翻译： 公开了具有字线移位电路（6）的DRAM。 在外部指定的测试模式中，字线移位电路顺序地选择两个字线（WLi，WLi + 1）A存储在存储单元（101）中的测试数据通过位线（BL，＆amp; B和B）移位到相邻的另一个 存储单元（102）。 在两个相邻的存储单元之间重复该移位操作。 通过将重复移位的测试数据与主要提供的测试数据进行比较，可以在短时间内检测连接到位线的存储单元中是否存在有缺陷的存储单元。

    Combustion control apparatus for a coal-fired furnace
    83.
    发明授权
    Combustion control apparatus for a coal-fired furnace 失效
    燃烧炉燃烧控制装置

    公开(公告)号：US5158024A

    公开(公告)日：1992-10-27

    申请号：US815800

    申请日：1992-01-02

    申请人： Shinji Tanaka ,  Tatsuya Miyatake ,  Kazuyoshi Yamamoto ,  Yuichi Miyamoto

    发明人： Shinji Tanaka ,  Tatsuya Miyatake ,  Kazuyoshi Yamamoto ,  Yuichi Miyamoto

    IPC分类号： F23C99/00 ,  F23N1/02 ,  F23N5/00 ,  G05B13/02

    CPC分类号： F23N5/003 ,  F23N1/022 ,  F23K2201/10 ,  F23N2023/52 ,  F23N2041/18 ,  Y10S706/90

    摘要： This invention relates to a combustion control apparatus for a powdered coal-fired furnace that monitors noxious substances contained within the burning waste gases, unburned substances within the ash and the power data of a pulverizing mill in order to operate the combustion furnace safely and efficiently. The combustion control apparatus infers from the current states or data optimal control amounts that will maintain within the minimum allowable ranges the noxious nitrogen oxides and the in-ash unburned substances that affect the combustion efficiency-and thereby controls the combustion furnace with good stability. The combustion control apparatus qualitatively evaluates as fuzzy quantities the density data of the nitrogen oxides contained within the exhaust gases of the unburned substances contained within the ash, and the power data of the pulverizing mill. Based upon the evaluation results a fuzzy inference is formed so as to determine the optimum control amount of the two-stage combustion air ratio for minimizing the nitrogen oxides and also the optimum control amount for the fine/coarse gain separator so as to extract powdered coal of a grain size most effective for minimizing the unburned substances within the ash.

    Angular velocity and acceleration sensor
    86.
    发明授权
    Angular velocity and acceleration sensor 失效
    角速度和加速度传感器

    公开(公告)号：US4750364A

    公开(公告)日：1988-06-14

    申请号：US920426

    申请日：1986-10-20

    申请人： Yoshio Kawamura ,  Kazuo Sato ,  Tsuneo Terasawa ,  Shinji Tanaka

    发明人： Yoshio Kawamura ,  Kazuo Sato ,  Tsuneo Terasawa ,  Shinji Tanaka

    IPC分类号： G01C19/56 ,  G01C19/5621 ,  G01C19/5628 ,  G01P15/097 ,  G01P15/10 ,  G01P15/125 ,  G01P15/08 ,  G01P9/04

    CPC分类号： G01P15/097 ,  G01C19/5607 ,  G01P15/14

    摘要： The specification discloses an angular velocity and acceleration sensor in which a tuning-fork oscillator is vibrated on the main driven vibrating axis and displacement on an axis which is parallel to the main driven vibrating axis or displacement which crosses it at right angles is detected so that at least one of angular velocity and acceleration on an axis which is parallel to the main driven vibrating axis or which crosses it at right angles may be detected. The sensor is characterized in that vibrating reeds of the tuning-fork oscillator are so formed that the spring constant of the vibrating reeds on the main driven vibrating axis is substantially equal to that on the axis which crosses the main driven vibrating axis at right angles.

    摘要翻译： 本说明书公开了一种角速度和加速度传感器，其中音叉振荡器在主驱动振动轴上振动，并且检测到平行于主驱动振动轴的轴线的位移或与其直角穿过的轴的位移，使得 可以检测在与主驱动振动轴平行的轴上的角速度和加速度中的至少一个，或者以直角与其相交。 传感器的特征在于，音叉振荡器的振动片形成为使得主从动振动轴上的振动片的弹簧常数基本上等于与主驱动振动轴线成直角相交的轴线的弹簧常数。

    SILVER-WHITE COPPER ALLOY AND METHOD OF PRODUCING SILVER-WHITE COPPER ALLOY
    88.
    发明申请
    SILVER-WHITE COPPER ALLOY AND METHOD OF PRODUCING SILVER-WHITE COPPER ALLOY 有权
    银白铜合金和生产银白铜合金的方法

    公开(公告)号：US20140112822A1

    公开(公告)日：2014-04-24

    申请号：US14115062

    申请日：2012-06-27

    申请人： Shinji Tanaka ,  Keiichiro Oishi ,  Hiroharu Ogawa

    发明人： Shinji Tanaka ,  Keiichiro Oishi ,  Hiroharu Ogawa

    IPC分类号： C22C9/04

    CPC分类号： C22C9/04 ,  C22F1/08

    摘要： Provided are a silver-white copper alloy which has superior mechanical properties such as hot workability, cold workability, or press property, color fastness, bactericidal and antibacterial properties, and Ni allergy resistance; and a method of producing such a silver-white copper alloy. The silver-white copper alloy includes 51.0 mass % to 58.0 mass % of Cu; 9.0 mass % to 12.5 mass % of Ni; 0.0003 mass % to 0.010 mass % of C; 0.0005 mass % to 0.030 mass % of Pb; and the balance of Zn and inevitable impurities, in which a relationship of 65.5≦[Cu]+1.2×[Ni]≦70.0 is satisfied between a content of Cu [Cu] (mass %) and a content of Ni [Ni] (mass %). In a metal structure thereof, an area ratio of β phases dispersed in an α-phase matrix is 0% to 0.9%.

    摘要翻译： 提供具有优异的机械性能如热加工性，冷加工性或冲压性，耐色牢度，杀菌和抗菌性能以及耐镍过敏性的银白铜合金。 以及制造这种银白铜合金的方法。 银白色铜合金含有Cu：51.0质量％〜58.0质量％ 9.0质量％〜12.5质量％的Ni; 0.0003质量％〜0.010质量％ 0.0005质量％至0.030质量％的Pb; 在Cu [Cu]（质量％）的含量与Ni [Ni（Ni））含量之间，满足65.5＆nlE; [Cu] + 1.2×[Ni] / nlE; 70.0的关系的Zn和不可避免的杂质的平衡 ]（质量％）。 在其金属结构中，面积比为＆bgr; 分散在α相基体中的相为0〜0.9％。

    Semiconductor device
    90.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08547723B2

    公开(公告)日：2013-10-01

    申请号：US13398418

    申请日：2012-02-16

    申请人： Shinji Tanaka ,  Makoto Yabuuchi ,  Yuta Yoshida

    发明人： Shinji Tanaka ,  Makoto Yabuuchi ,  Yuta Yoshida

    IPC分类号： G11C8/08

    CPC分类号： G11C11/419 ,  G11C5/06 ,  G11C5/063 ,  G11C7/08 ,  G11C7/227 ,  G11C8/08 ,  G11C8/10 ,  G11C11/415 ,  G11C11/418

    摘要： A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines. Each column direction load circuit is provided with plural NMOS transistors fixed to an off state, predetermined ones of which have the source and the drain suitably coupled to any of the dummy bit lines. Load capacitance accompanying diffusion layer capacitance of the predetermined NMOS transistors is added to the dummy bit lines, and corresponding to the load capacitance, the delay time from a decode activation signal to a dummy bit line signal is set up. The dummy bit line signal is employed when setting the start-up timing of a sense amplifier.

    摘要翻译： 提供了具有减小操作时序的变化的存储单元的半导体器件。 例如，半导体器件设置有与适当的位线相对布置的虚拟位线，以及顺序耦合到虚拟位线的列方向负载电路。 每个列方向负载电路设置有多个固定在截止状态的NMOS晶体管，其中预定的NMOS晶体管具有适当地耦合到任何虚拟位线的源极和漏极。 将与预定NMOS晶体管的扩散层电容相关的负载电容加到虚拟位线，并且对应于负载电容，建立从解码激活信号到虚拟位线信号的延迟时间。 当设置读出放大器的启动定时时，采用虚拟位线信号。