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    BIDIRECTIONAL ELECTRONIC SWITCH
    83.
    发明申请
    BIDIRECTIONAL ELECTRONIC SWITCH 有权
    双向电子开关

    公开(公告)号：US20090159925A1

    公开(公告)日：2009-06-25

    申请号：US12336106

    申请日：2008-12-16

    Applicant: Osamu Machida

    Inventor： Osamu Machida

    IPC: H01L29/739

    CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/2003 ,  H01L29/7783 ,  H01L29/872

    Abstract: A main semiconductor region grown on a substrate has formed on its surface a pair of main electrodes spaced from each other, a gate electrode between the main electrodes, and a pair of diode-forming electrodes spaced farther away from the gate electrode than are the main electrodes. Making ohmic contact with the main semiconductor region, the pair of main electrodes serve both as drain or source of a HEMT switch and as cathodes of a pair of Schottky diodes integrated with the HEMT switch. Both gate electrode and diode-forming electrodes are in Schottky contact with the main semiconductor region.

    Abstract translation: 生长在基板上的主半导体区域在其表面上形成彼此间隔开的一对主电极，主电极之间的栅电极和远离栅极电极的一对二极管形成电极比主电极 电极。 与主半导体区域欧姆接触，该对主电极既用作HEMT开关的漏极或源极，也用作与HEMT开关集成的一对肖特基二极管的阴极。 栅电极和二极管形成电极都与主半导体区域肖特基接触。

    SURFACE-STABILIZED SEMICONDUCTOR DEVICE
    85.
    发明申请
    SURFACE-STABILIZED SEMICONDUCTOR DEVICE 失效
    表面稳定的半导体器件

    公开(公告)号：US20080121876A1

    公开(公告)日：2008-05-29

    申请号：US11961620

    申请日：2007-12-20

    Applicant: Koji Otsuka ,  Osamu Machida ,  Hitoshi Murofushi

    Inventor： Koji Otsuka ,  Osamu Machida ,  Hitoshi Murofushi

    IPC: H01L51/05

    CPC classification number: H01L29/7787 ,  H01L23/293 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/405 ,  H01L29/475 ,  H01L29/78 ,  H01L29/8611 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: A high electron mobility transistor is disclosed which has a main semiconductor region formed on a silicon substrate. The main semiconductor region is a lamination of a buffer layer on the substrate, an electron transit layer on the buffer layer, and an electron supply layer on the electron transit layer. A source, drain, and gate overlie the electron supply layer. Also formed on the electron supply layer is a surface-stabilizing organic semiconductor overlay which is of p conductivity type in contrast to the n type of the electron supply layer.

    Abstract translation: 公开了一种高电子迁移率晶体管，其具有形成在硅衬底上的主要半导体区域。 主半导体区域是衬底上的缓冲层，缓冲层上的电子传输层和电子迁移层上的电子供给层的叠层。 源极，漏极和栅极覆盖电子供应层。 还形成在电子供应层上的是与n型电子供应层相反的p导电类型的表面稳定性有机半导体覆盖层。

    Ink jet print head
    87.
    发明授权
    Ink jet print head 失效
    喷墨打印头

    公开(公告)号：US5666140A

    公开(公告)日：1997-09-09

    申请号：US228897

    申请日：1994-04-18

    Applicant: Masao Mitani ,  Kenji Yamada ,  Osamu Machida

    Inventor： Masao Mitani ,  Kenji Yamada ,  Osamu Machida

    IPC: B41J2/14 ,  B41J2/16 ,  B41J11/00 ,  B41J2/05

    CPC classification number: B41J2/1635 ,  B41J11/002 ,  B41J11/0085 ,  B41J2/1404 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1643 ,  B41J2202/03

    Abstract: An ink jet print head includes: a monolithic silicon substrate having a top surface; a plurality of chamber walls for defining a plurality of ink chambers on the top surface of the silicon substrate, the plurality of ink chambers being aligned in a first direction into a row extending along the top surface of the silicon substrate, each of the plurality of ink chambers being filled with ink, each chamber wall having a nozzle portion for defining a nozzle of a plurality of nozzles, each nozzle portion being formed so that each nozzle is in fluid communication with a respective ink chamber, the plurality of nozzles being aligned in the first direction into a row extending parallel to the top surface of the silicon substrate; an integrated circuit provided on the top surface of the silicon substrate and located adjacent to the plurality of ink chambers for outputting pulsed electric current; and a plurality of thermal resistors provided on the top surface of the silicon substrate each being located in a corresponding ink chamber of the plurality of ink chambers, each of the plurality of thermal resistors including a thin-film resistor. the thin-film resistor being made of a material selected from a group consisting of Ta--Si--SiO alloy and Cr--Si--SiO alloy, the thin-film conductor being made of a material selected from a group consisting of tungsten and nickel.

    Abstract translation: 一种喷墨打印头包括：具有顶表面的单片硅基板; 多个室壁，用于在硅衬底的顶表面上限定多个墨室，所述多个墨室沿着第一方向排列成沿着硅衬底的顶表面延伸的一排， 每个室壁具有用于限定多个喷嘴的喷嘴的喷嘴部分，每个喷嘴部分形成为使得每个喷嘴与相应的墨水室流体连通，多个喷嘴对准在 所述第一方向平行于所述硅衬底的顶表面延伸成一行; 集成电路，其设置在所述硅基板的顶表面上，并位于所述多个墨室附近，用于输出脉冲电流; 以及设置在所述硅基板的上表面上的多个热电阻器，每个位于所述多个墨水腔室的相应的墨水室中，所述多个热敏电阻器中的每一个包括薄膜电阻器。 所述薄膜电阻器由选自由Ta-Si-SiO合金和Cr-Si-SiO合金组成的组中的材料制成，所述薄膜导体由选自钨和镍的材料制成。

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