公开(公告)号：US20080280435A1

公开(公告)日：2008-11-13

申请号：US12092605

申请日：2006-11-03

申请人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

发明人： Johan H. Klootwijk ,  Antonius L. A. M. Kemmeren ,  Ronald Dekker ,  Eric Cornelis Egbertus Van Grunsven ,  Freddy Roozeboom

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/764 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer

摘要翻译： 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。根据本发明的第一方面，通过提供衬底沟槽 具有孔的外涂层。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在基板开口被永久覆盖之前使用临时盖层的常见思想，在移除临时盖层之前

公开(公告)号：US07314782B2

公开(公告)日：2008-01-01

申请号：US10527777

申请日：2003-08-21

申请人： Ronald Dekker ,  Jan Baptist Petrus Henricus Van Der Putten ,  Ramon Jacob Havens

发明人： Ronald Dekker ,  Jan Baptist Petrus Henricus Van Der Putten ,  Ramon Jacob Havens

IPC分类号： H01L21/00

CPC分类号： H01L29/66712 ,  H01L21/78 ,  H01L29/6631 ,  H01L29/781

摘要： The invention relates to a method of manufacturing a semiconductor device (10) in which, in a semiconductor body (1) with a temporary substrate (2), at least one semiconductor element (3) is formed which, on a side of the semiconductor body (1) opposite to the substrate (2), is provided with at least one connection region (4), and, on the said side, a dielectric (5) is formed and patterned to leave free the connection region (4), after which a metal layer (6) is deposited over the dielectric (5) so as to be in contact with the connection region (4), which metal layer (6) serves as an electric connection conductor of the connection region (4), after which the temporary substrate (2) is removed and the metal layer (6) also serves as a substrate of the device (10). According to the invention, before the metal layer (6) is deposited, there is formed, around the patterned part of the dielectric (5) and around the semiconductor element (3), an annular region (7) of a resin having a larger thickness than the dielectric (5), and the metal layer (6) is deposited within the rectangular annular region (7). In this way, an individual device (10) can readily be formed after the metal layer (6) has been deposited, preferably by pushing the device (10) out of the region (7). Preferably, a (different) photoresist is chosen for the dielectric (5) and the region (7). The invention also comprises a semiconductor device (10) obtained in this way.

摘要翻译： 本发明涉及一种制造半导体器件（10）的方法，其中在具有临时衬底（2）的半导体本体（1）中，形成至少一个半导体元件（3），其在半导体 本体（1）与基板（2）相对设置有至少一个连接区域（4），并且在所述侧面上形成有电介质（5）并图案化以使连接区域（4）免费， 之后将金属层（6）沉积在电介质（5）上以与连接区域（4）接触，该金属层（6）用作连接区域（4）的电连接导体， 之后移除临时衬底（2），金属层（6）也用作器件（10）的衬底。 根据本发明，在金属层（6）沉积之前，在电介质（5）的图案化部分周围形成围绕半导体元件（3）的环形区域（7），具有较大的 厚度比电介质（5）厚，并且金属层（6）沉积在矩形环形区域（7）内。 以这种方式，优选地，通过将​​装置（10）推出区域（7）之后，可以容易地在沉积金属层（6）之后形成单个装置（10）。 优选地，为电介质（5）和区域（7）选择（不同的）光致抗蚀剂。 本发明还包括以这种方式获得的半导体器件（10）。

公开(公告)号：US20070184580A1

公开(公告)日：2007-08-09

申请号：US10597994

申请日：2005-02-02

申请人： Johan Klootwijk ,  Cornelis Timmering ,  Jacob Snijder ,  Ronald Dekker ,  Theodorus Michelsen

发明人： Johan Klootwijk ,  Cornelis Timmering ,  Jacob Snijder ,  Ronald Dekker ,  Theodorus Michelsen

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L2221/68313

摘要： A method of making a comparatively small substrate (12) compatible with manufacturing equipment for a larger-size standard substrate is disclosed. The standard substrate (1) has a surface (10) in which a depression (8) is formed, in which depression the small substrate is connected by means of a layer of a bonding material (13). The depression is formed so as to have a flat bottom (9) extending parallel to the surface. The depression has a depth such that, after the small substrate has been connected with its rear side to the bottom of the depression of the standard substrate by means of the layer of bonding material, the front side (14) of the small substrate forms a free surface which practically coincides with the surface (10) of the carrier wafer. When the standard substrate with the small substrate positioned in the depression is placed into a lithographic stepper, the free surface of the small substrate is placed automatically in a position such that patterns having very small dimensions can be projected onto a photoresist layer formed on said free surface.

摘要翻译： 公开了一种制造与较大尺寸标准基板的制造设备兼容的较小基板（12）的方法。 标准基板（1）具有其中形成有凹部（8）的表面（10），其中小基板通过粘合材料层（13）连接。 凹陷形成为具有平行于表面延伸的平坦的底部（9）。 凹陷具有这样的深度，使得在通过粘合材料层将小基板与其后侧连接到标准基板的凹陷的底部之后，小基板的正面（14）形成 实际上与载体晶片的表面（10）重合的自由表面。 当将具有位于凹陷中的小衬底的标准衬底放置在光刻步进器中时，小衬底的自由表面被自动放置在使得具有非常小的尺寸的图案能够投影到形成在所述自由 表面。

公开(公告)号：US20060278976A1

公开(公告)日：2006-12-14

申请号：US10572982

申请日：2004-09-02

申请人： Ronald Dekker ,  Theodorus Michielsen ,  Antoon Tombeur ,  Johann-Heinrich Fock

发明人： Ronald Dekker ,  Theodorus Michielsen ,  Antoon Tombeur ,  Johann-Heinrich Fock

IPC分类号： H01L23/34

CPC分类号： H01L23/48 ,  H01L21/6835 ,  H01L21/6836 ,  H01L27/124 ,  H01L27/1266 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00

摘要： The semiconductor device (100) comprises an integrated circuit (20) and a first and a second contact face (31,33). These are connected with vertical interconnects (32,34) to the integrated circuit (20). This integrated circuit (20) is present in a semiconductor layer of a substrate. This substrate is absent in a non-active area (B). This leads to the fact that on the side faces (101) of the device (100) neither conductive material nor parts of the semiconductor substrate are exposed. On lamination of the device between two metallized foils into an identification label, the risk of short-circuitry due to undesired contact at the side face (101) of the device (100), is prevented thereby.

摘要翻译： 半导体器件（100）包括集成电路（20）和第一和第二接触面（31,33）。 这些与垂直互连（32,34）连接到集成电路（20）。 该集成电路（20）存在于基板的半导体层中。 在非活性区域（B）中不存在该底物。 这导致在器件（100）的侧面（101）上既不暴露导电材料也不露出半导体衬底的部分的事实。 在将两个金属箔之间的装置层压成识别标签时，由此防止由于装置（100）的侧面（101）处的不期望的接触而导致短路的风险。

公开(公告)号：US20060278265A1

公开(公告)日：2006-12-14

申请号：US10557621

申请日：2004-05-17

申请人： Martin Ouwerkerk ,  Ronald Dekker ,  Maxime Mellier ,  Sebastian Egner ,  Clemens Lasance

发明人： Martin Ouwerkerk ,  Ronald Dekker ,  Maxime Mellier ,  Sebastian Egner ,  Clemens Lasance

IPC分类号： H01L35/02 ,  H01L35/34

CPC分类号： H01L35/34

摘要： The invention relates to a method of manufacturing a thermoelectric device (10), in particular a thermoelectric generator (10), comprising a flexible foil (1) on which two groups (2, 3) of series-connected strip-shaped parts (2A, 3A) are formed, where the materials chosen for the two groups of parts (2A, 3A) are materials with a different thermoelectric coefficient and said two groups of parts are formed in a pattern (100) such that the connections (4) between one part (2A) of one group (2) and another part (3A) of the other group (3) are alternately positioned in two spaced apart areas (G1, G2) of the foil (1), and after the formation of the parts (2A, 3A) on a substrate (5), the foil (1) is attached to the stripshaped parts (2A, 3A), after which the substrate (5) is removed. According to the invention, for the substrate (5) use is made of a rigid (=relatively thick) substrate (5), and before the substrate (5) is removed a rigid (=relatively thick) carrier plate (6) is attached to the foil (1) that is removed again from the foil (1) after removal of the rigid substrate (5). In this way, the method is particularly suitable for the use of semiconductor substrates (5) which can be rapidly removed by chemical-mechanical polishing. Preferably, the foil (1) with the device (10) is folded or coiled before use.

摘要翻译： 本发明涉及一种制造热电装置（10）的方法，特别是一种热电发生器（10），其包括柔性箔（1），两组（2,3）串联连接的带状部件（2 A，3A），其中为两组部件（2A，3A）选择的材料是具有不同热电系数的材料，并且所述两组部件以图案（100）形成，使得连接 在另一组（3）的一组（2）的一部分（2A）和另一组（3）的另一部分（3A）之间的（4）交替地位于箔（1）的两个间隔开的区域（G 1，G 2） ），并且在基板（5）上形成部件（2A，3A）之后，将箔（1）附接到条状部件（2A，3A），然后将基板（5） 删除。 根据本发明，对于基底（5），使用刚性（=相对较厚）的基底（5），并且在移除基底（5）之前，附接刚性（=较厚）的载体板（6） 涉及在去除刚性基材（5）之后再次从箔（1）上除去的箔（1）。 以这种方式，该方法特别适用于可通过化学机械抛光快速去除的半导体衬底（5）。 优选地，具有装置（10）的箔（1）在使用之前被折叠或盘绕。

公开(公告)号：US07027269B2

公开(公告)日：2006-04-11

申请号：US09923611

申请日：2001-08-07

申请人： Frank Cornelis Penning ,  Ronald Dekker ,  Henricus Godefridus Rafael Maas

发明人： Frank Cornelis Penning ,  Ronald Dekker ,  Henricus Godefridus Rafael Maas

IPC分类号： G11B5/127

CPC分类号： G11B5/17 ,  G11B5/60 ,  G11B11/10534 ,  G11B11/10554 ,  G11B11/1058

摘要： A simple method of manufacturing a magnetic head having a head face and including a planar magnetic coil (7) which extends parallel to the head face. According to the method, the magnetic coil is formed at a first side of a first substrate (1). Thereafter, the first substrate provided with the magnetic coil is adhered with its first side to a side of a second substrate, whereafter material of the first substrate is removed from a second side of the first substrate (9), the second side being turned away from the first side, in order to form the head face, in such a manner that the magnetic coil is situated near to the head face.

摘要翻译： 一种制造具有头部表面并包括平行于头部表面延伸的平面磁性线圈（7）的磁头的简单方法。 根据该方法，在第一基板（1）的第一侧形成有电磁线圈。 此后，设置有磁性线圈的第一基板的第一侧粘附到第二基板的一侧，之后从第一基板（9）的第二侧去除第一基板的材料，将第二侧面转回 从第一侧开始，以使磁性线圈靠近头部表面的方式形成头部面。

公开(公告)号：US20050140003A1

公开(公告)日：2005-06-30

申请号：US10508745

申请日：2003-03-20

申请人： Robertus Adrianus Wolters ,  Petra De Jongh ,  Ronald Dekker

发明人： Robertus Adrianus Wolters ,  Petra De Jongh ,  Ronald Dekker

IPC分类号： H01L23/29 ,  G06K19/073 ,  G06K19/077 ,  H01L21/316 ,  H01L23/12 ,  H01L23/28 ,  H01L23/31 ,  H01L23/58 ,  H01L23/48

CPC分类号： H01L23/573 ,  G06K19/07372 ,  H01L23/28 ,  H01L27/02 ,  H01L2924/0002 ,  Y10S257/922 ,  H01L2924/00

摘要： The semiconductor device comprises a substrate (10) with a first (1) and an opposed second side (2), at which first side a plurality of transistors and interconnects is present, which are covered by a protective security covering (16), which device is further provided with bond pad regions (14). The protective security covering (16) comprises a substantially non-transparent and substantially chemically inert security coating (16), and the bond pad regions (14) are accessible from the second side of the substrate (10). The semiconductor device can be suitable made with a substrate transfer technique, in which a second substrate (24) is provided at the protective security covering (16).

摘要翻译： 半导体器件包括具有第一（1）和相对的第二侧（2）的衬底（10），第一侧上存在多个晶体管和互连，其被保护性安全覆盖物（16）覆盖， 器件还设置有接合焊盘区域（14）。 保护性保护罩（16）包括基本上不透明且基本上化学惰性的安全涂层（16），并且接合焊盘区域（14）可从衬底（10）的第二侧接近。 该半导体器件可以适合用衬底转移技术制成，其中第二衬底（24）设置在保护性防护罩（16）处。

公开(公告)号：US06698073B2

公开(公告)日：2004-03-02

申请号：US09790298

申请日：2001-02-21

申请人： Ronald Dekker ,  Henricus Godefridus Rafael Maas

发明人： Ronald Dekker ,  Henricus Godefridus Rafael Maas

IPC分类号： H04R1710

CPC分类号： H03H9/564 ,  H03H3/02 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T29/49128 ,  Y10T29/49155

摘要： A method of manufacturing a piezoelectric filter with a resonator comprising a layer of a piezoelectric material (1) which is provided with an electrode (2,3) on either side, which resonator is situated on an acoustic reflector layer (4) formed on a surface (6) of a carrier substrate (7). In the method, the layer of piezoelectric material (1) is provided on a surface (8) of an auxiliary substrate (9), after which a first electrode (2) is formed on the layer of piezoelectric material (1). The acoustic reflector layer (4) is provided on and next to the first electrode (2), and the structure thus formed is secured with the side facing away from the auxiliary substrate (9) on the carrier substrate (7). The auxiliary substrate (9) is removed and a second electrode (3) situated opposite the first electrode (2) is provided.

摘要翻译： 一种制造具有谐振器的压电滤波器的方法，该谐振器包括在任一侧上设置有电极（2,3）的压电材料（1）的层，该谐振器位于形成在 载体基板（7）的表面（6）。 在该方法中，压电材料层（1）设置在辅助基板（9）的表面（8）上，之后在压电材料层（1）上形成第一电极（2）。 声反射器层（4）设置在第一电极（2）上并且紧邻第一电极（2），并且如此形成的结构被固定在载体基板（7）上的背离辅助基板（9）的一侧。 移除辅助基板（9），并且设置与第一电极（2）相对的第二电极（3）。

公开(公告)号：US06593628B2

公开(公告)日：2003-07-15

申请号：US09819280

申请日：2001-03-28

申请人： Ronald Dekker ,  Henricus Godefridus Rafael Maas ,  Jan Willem Slotboom ,  Freerk Van Rijs

发明人： Ronald Dekker ,  Henricus Godefridus Rafael Maas ,  Jan Willem Slotboom ,  Freerk Van Rijs

IPC分类号： H01L2701

CPC分类号： H01L27/0825 ,  H01L21/8222 ,  H01L21/84 ,  H01L27/088 ,  H01L27/1203

摘要： The invention relates to an essentially discrete semiconductor device comprising a semiconductor body (10) having a first, preferably bipolar, transistor (T1) with a first region (1) forming a collector (1) of T1, and a second, preferably also bipolar, transistor (T2) with a second region (2) forming a collector (2) of T2, which transistors (T1, T2) are in a cascode configuration wherein the collector (1) of T1is connected to the emitter (4) of T2. Such a device cannot suitably be used in a base station for mobile communication. According to the invention, the first region (1) and the second region (2) are positioned next to each other within a semiconductor region (5), a part of which situated below the first region (1) is provided with a higher doping concentration at the location of T1. In this way, T1 has a low collector-emitter breakdown voltage and a high cutoff frequency, whereas for T2 said voltage and frequency are, respectively, high(er) and low(er). The resultant device is very suitable, on the one hand, for a high voltage application, for example 28 V, and a high power application, for example 100 W and, on the other hand, the device can still operate at a very high speed and hence is very suitable for the above application. Moreover, the device can be manufactured very easily using a method according to the invention. Preferably, the device is rendered suitable for surface mounting, and the semiconductor body is attached to an isolating substrate (20), while the parts thereof that are situated outside T1 and T2 are removed.

摘要翻译： 本发明涉及一种基本上分立的半导体器件，其包括具有第一优选为双极晶体管（T1）的半导体本体（10），其中第一区域（1）形成为T1的集电极（1），第二区域（1）优选为双极晶体管 ，具有形成T2的集电极（2）的第二区域（2）的晶体管（T2），所述晶体管（T1，T2）处于共源共栅结构，其中T1的集电极（1）连接到T2的发射极（4） 。 这样的设备不能适用于用于移动通信的基站。 根据本发明，第一区域（1）和第二区域（2）在半导体区域（5）内彼此相邻定位，其一部分位于第一区域（1）的下方，具有较高的掺杂 集中在T1的位置。 以这种方式，T1具有低集电极 - 发射极击穿电压和高截止频率，而对于T2，所述电压和频率分别为高（呃）和低（呃）。 一方面，所得到的装置非常适合于高压应用，例如28V，以及高功率应用，例如100W，另一方面，该装置仍然可以以非常高的速度运行 因此非常适合于上述应用。 此外，可以使用根据本发明的方法非常容易地制造该装置。 优选地，该装置适于表面安装，并且半导体主体附接到隔离衬底（20），而位于T1和T2外部的部分被去除。

公开(公告)号：US06580583B1

公开(公告)日：2003-06-17

申请号：US08966229

申请日：1997-11-07

申请人： Derk J. Adelerhof ,  Ronald Dekker ,  Henricus G. R. Maas

发明人： Derk J. Adelerhof ,  Ronald Dekker ,  Henricus G. R. Maas

IPC分类号： G11B5147

CPC分类号： G11B5/127 ,  G11B5/31

摘要： A thin-film magnetic head has a semiconductor substrate in which there is an integrated circuit, and on which a magnetic layer structure is arranged. During manufacturing the integrated circuit is formed on one side of the semiconductor substrate, and that side of the semiconductor substrate is then secured to a carrier body by a securing layer. The substrate may then be ground or etched to a thickness less than 35&mgr;m before forming the magnetic layer structure on the opposite side. Securing to the carrier body prevents deformation of the layer structure during manufacturing, so that the resulting head has reproducible properties. Preferably a support body is secured over the layer structure. The head face is then formed such that the layer structure and the support and carrier bodies terminate in it.

摘要翻译： 薄膜磁头具有半导体衬底，其中存在集成电路，并且在其上布置有磁性层结构。 在制造期间，集成电路形成在半导体衬底的一侧上，然后通过固定层将半导体衬底的该侧固定到载体上。 然后可以在形成相对侧的磁性层结构之前将衬底研磨或蚀刻至小于35μm的厚度。 固定到承载体防止制造过程中的层结构的变形，从而得到的头具有可重现的性质。 优选地，支撑体固定在层结构上。 然后形成头部表面，使得层结构和支撑体和载体主体终止于其中。