公开(公告)号：US20220189950A1

公开(公告)日：2022-06-16

申请号：US17686460

申请日：2022-03-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei MOMO ,  Kazutaka KURIKI ,  Hiromichi GODO

IPC: H01L27/06 ,  H01G11/14 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.

公开(公告)号：US20210313555A1

公开(公告)日：2021-10-07

申请号：US17350248

申请日：2021-06-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya IKENUMA ,  Kazutaka KURIKI

IPC: H01M4/13 ,  H01M4/04 ,  H01M4/139 ,  H01M4/62 ,  H01M10/42 ,  H01M4/36

Abstract: To provide a highly reliable power storage device. To provide a long-life power storage device. To provide a power storage device electrode having high adhesion with a current collector. To reduce or inhibit electrochemical decomposition of an electrolytic solution or the like on a surface of an electrode. The power storage device electrode includes a current collector and a second electrode layer provided over the current collector and including a second binder and an active material. A first electrode layer including a first binder and conductive particles is provided between the current collector and the second electrode layer. At least part of a surface of the active material is provided with a coating film, and the coating film is porous.

公开(公告)号：US20210184214A1

公开(公告)日：2021-06-17

申请号：US16761504

申请日：2018-11-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi MIKAMI ,  Yohei MOMMA ,  Kazutaka KURIKI ,  Kazuhei NARITA

IPC: H01M4/58 ,  H01M10/0562 ,  H01M10/0525 ,  H01M4/62 ,  H01M4/587

Abstract: A conduction path in an all-solid-state secondary battery is difficult to keep with a volume change in an active material due to charging and discharging in some cases.
A positive electrode active material with a small volume change between the charged state and the discharged state is used for an all-solid-state secondary battery. For example, a positive electrode active material that has a layered rock-salt crystal structure in the discharged state and a crystal structure similar to the cadmium chloride type crystal structure in the charged state with a depth of charge of approximately 0.8 changes less in its volume and crystal structure between charging and discharging than known positive electrode active materials.

公开(公告)号：US20190139783A1

公开(公告)日：2019-05-09

申请号：US16093268

申请日：2017-04-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kazutaka KURIKI ,  Yuji EGI ,  Noritaka ISHIHARA ,  Yusuke NONAKA ,  Yasumasa YAMANE ,  Ryo TOKUMARU ,  Daisuke MATSUBAYASHI

IPC: H01L21/4757 ,  H01L27/105 ,  H01L27/12 ,  H01L29/66 ,  H01L21/443 ,  H01L21/477 ,  H01L21/02 ,  H01L29/786 ,  H01J37/32

Abstract: A semiconductor device having high reliability is provided.A first conductor is formed, a first insulator is formed over the first conductor, a second insulator is formed over the first insulator, a third insulator is formed over the second insulator, microwave-excited plasma treatment is performed on the third insulator, an island-shaped first oxide semiconductor is formed over the third insulator and a second conductor and a third conductor are formed over the first oxide semiconductor, an oxide semiconductor film is formed over the first oxide semiconductor, the second conductor, and the third conductor, a first insulating film is formed over the oxide semiconductor film, a conductive film is formed over the first insulating film, a fourth insulator and a fourth conductor are formed by partly removing the first insulating film and the conductive film, a second insulating film is formed to cover the oxide semiconductor film, the fourth insulator, and the fourth conductor, a second oxide semiconductor and a fifth insulator are formed by partly removing the oxide semiconductor film and the second insulating film to expose a side surface of the first oxide semiconductor, a sixth insulator is formed in contact with the side surface of the first oxide semiconductor and a side surface of the second oxide semiconductor, a seventh insulator is formed in contact with the sixth insulator, and heat treatment is performed.

公开(公告)号：US20170338491A1

公开(公告)日：2017-11-23

申请号：US15668743

申请日：2017-08-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kai KIMURA ,  Kazutaka KURIKI ,  Teppei OGUNI ,  Aya UCHIDA (Forme: HITOTSUYANAGI)

IPC: H01M4/62 ,  H01G11/28 ,  H01G11/38 ,  H01M4/13 ,  H01M10/0525 ,  H01M10/0566 ,  H01M4/133 ,  H01G11/26 ,  H01G11/24 ,  H01M10/42 ,  H01M10/44 ,  H01M4/02

CPC classification number: H01M4/622 ,  H01G11/24 ,  H01G11/26 ,  H01G11/28 ,  H01G11/38 ,  H01M4/13 ,  H01M4/133 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0566 ,  H01M10/446 ,  H01M2004/021 ,  H01M2010/4292 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with high capacity or high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode includes an active material, a first binder, and a second binder. The specific surface area of the active material is S [m2/g]. The weight of the active material, the weight of the first binder, and the weight of the second binder are a, b, and c, respectively. The solution of {(b+c)/(a+b+c)}×100÷S is 0.3 or more. The electrode includes a first film in contact with the active material. The first film preferably includes a region in contact with the active material. The first film preferably includes a region with a thickness of 2 nm or more and 20 nm or less. The first film contains a water-soluble polymer.

公开(公告)号：US20160043070A1

公开(公告)日：2016-02-11

申请号：US14817242

申请日：2015-08-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei MOMO ,  Kazutaka KURIKI ,  Hiromichi GODO

IPC: H01L27/06 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01G11/08 ,  H01G11/14 ,  H01L21/8258 ,  H01L27/0688 ,  H01L29/66742 ,  H01L29/786 ,  Y02E60/13

Abstract: A semiconductor device in which a circuit and a power storage element are efficiently placed is provided. The semiconductor device includes a first transistor, a second transistor, and an electric double-layer capacitor. The first transistor, the second transistor, and the electric double-layer capacitor are provided over one substrate. A band gap of a semiconductor constituting a channel region of the second transistor is wider than a band gap of a semiconductor constituting a channel region of the first transistor. The electric double-layer capacitor includes a solid electrolyte.

Abstract translation: 提供了其中有效地放置电路和功率存储元件的半导体器件。 半导体器件包括第一晶体管，第二晶体管和双电层电容器。 第一晶体管，第二晶体管和双电层电容器设置在一个衬底上。 构成第二晶体管的沟道区的半导体的带隙比构成第一晶体管的沟道区的半导体的带隙宽。 电双层电容器包括固体电解质。

公开(公告)号：US20160020035A1

公开(公告)日：2016-01-21

申请号：US14802326

申请日：2015-07-17

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Nobuhiro INOUE ,  Ryota TAJIMA ,  Kazutaka KURIKI ,  Mitsuhiro ICHIJO ,  Yoshikazu HIURA ,  Mai SUGIKAWA

IPC: H01G9/042 ,  H01M4/136 ,  H01M4/131 ,  H01M10/0525 ,  H01M4/134

CPC classification number: H01G11/30 ,  H01M4/0428 ,  H01M4/13 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/136 ,  H01M4/139 ,  H01M4/366 ,  H01M4/386 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/0427 ,  H01M10/0431 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/058 ,  H01M10/0585 ,  H01M10/425 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.

Abstract translation: 提供高容量的蓄电装置。 或者，提供具有优异的循环特性的蓄电装置。 或者，提供具有高充放电效率的蓄电装置。 或者，提供寿命长的蓄电装置。 在负极集电体上设置负极活性物质，负极活性物质层以第一层和第二层交替堆叠的方式形成。 第一层至少包括选自Si，Mg，Ca，Ga，Al，Ge，Sn，Pb，Sb，Bi，Ag，Zn，Cd，As，Hg和In中的一种元素。 第二层包括氧和与第一层中包含的元素相同的元素。

公开(公告)号：US20150017541A1

公开(公告)日：2015-01-15

申请号：US14472962

申请日：2014-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryota TAJIMA ,  Shunpei YAMAZAKI ,  Teppei OGUNI ,  Takeshi OSADA ,  Shinya SASAGAWA ,  Kazutaka KURIKI

IPC: H01M4/133 ,  H01M10/0525

CPC classification number: H01M4/133 ,  B82Y30/00 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/386 ,  H01M4/625 ,  H01M10/0525 ,  H01M10/465 ,  Y02E60/122 ,  Y02T10/7011

Abstract: A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.

Abstract translation: 具有充电/放电容量高，蓄电池特性劣化少的蓄电装置，能够高速进行充放电。 蓄电装置包括负极。 负极包括设置在集电体上方的集电体和活性物质层。 活性物质层包括从集电体突出的多个突起和设置在多个突起上的石墨烯。 多个突起的轴线朝向相同的方向。 在集电体和多个突起之间可以设置公共部分。

公开(公告)号：US20140127567A1

公开(公告)日：2014-05-08

申请号：US14069408

申请日：2013-11-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazutaka KURIKI ,  Ryota Tajima ,  Nobuhiro Inoue ,  Junpei Momo

IPC: H01G11/42 ,  H01M4/1393 ,  H01G9/00 ,  H01M4/36

CPC classification number: H01G11/42 ,  H01G11/32 ,  H01M4/1393 ,  H01M4/366 ,  H01M4/587 ,  Y02E60/13

Abstract: To improve the long-term cycle performance of a lithium-ion battery or a lithium-ion capacitor by minimizing the decomposition reaction of an electrolytic solution and the like as a side reaction of charge and discharge in the repeated charge and discharge cycles of the lithium-ion battery or the lithium-ion capacitor. A current collector and an active material layer over the current collector are included in an electrode for a power storage device. The active material layer includes a plurality of active material particles and silicon oxide. The surface of one of the active material particles has a region that is in contact with one of the other active material particles. The surface of the active material particle except the region is partly or entirely covered with the silicon oxide.

Abstract translation: 为了通过最小化电解液等的分解反应来提高锂离子电池或锂离子电容器的长期循环性能，作为在锂的重复充放电循环中的充放电的副反应 锂电池或锂离子电容器。 在集电器上方的集电体和活性物质层包括在用于蓄电装置的电极中。 活性物质层包括多个活性物质粒子和氧化硅。 活性物质粒子之一的表面具有与其它活性物质粒子接触的区域。 除了该区域之外的活性材料颗粒的表面被氧化硅部分或全部覆盖。