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    Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s)
    82.
    发明授权
    Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent(s) 有权

    公开(公告)号：US10121960B2

    公开(公告)日：2018-11-06

    申请号：US15373396

    申请日：2016-12-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Roman Chepulskyy ,  Dmytro Apalkov

    IPC: H01L21/00 ,  H01L21/76 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

    Abstract: A magnetic junction and method for providing the magnetic junction are described. The method includes providing a free layer, providing a pinned layer and providing a nonmagnetic spacer between the free and pinned layers. The free layer is switchable between stable magnetic states using a write current passed through the magnetic junction. At least one of the step of providing the free layer and the step of providing the pinned layer includes depositing a magnetic layer; depositing an adsorber layer on the magnetic layer and performing at least one anneal. The magnetic layer is amorphous as-deposited and includes an interstitial glass-promoting component. The adsorber layer attracts the interstitial glass-promoting component and has a lattice mismatch with the nonmagnetic spacer layer of not more than ten percent. Each of the anneal(s) is at a temperature greater than 300 degrees Celsius and not more than 425 degrees Celsius.

    B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM
    87.
    发明授权
    B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM 有权

    公开(公告)号：US09825220B2

    公开(公告)日：2017-11-21

    申请号：US15080576

    申请日：2016-03-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Xueti Tang ,  Dustin Erickson ,  Vladimir Nikitin ,  Roman Chepulskyy

    IPC: H01L29/82 ,  H01L43/12 ,  H01L43/08 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08

    Abstract: A magnetic tunnel junction device and a method to make the device are disclosed. The magnetic tunnel junction device comprises a first reference magnetic material layer, a tunnel barrier material layer, a free magnetic material layer between the first reference magnetic material layer and the tunnel barrier material layer, and a second reference magnetic material layer disposed on an opposite side of the tunnel barrier material layer from the free magnetic material layer, in which the second reference magnetic material layer is anti-magnetically exchanged coupled with the first reference magnetic material layer. A shift field Hshift experienced by the free magnetic material layer is substantially canceled by the anti-magnetic exchange coupling between the first reference magnetic material layer and the second reference magnetic material layer.

    Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature
    88.
    发明授权
    Method and system for providing magnetic junctions having a gradient in magnetic ordering temperature 有权

    公开(公告)号：US09741927B2

    公开(公告)日：2017-08-22

    申请号：US14613936

    申请日：2015-02-04

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dmytro Apalkov ,  Alexey Vasilyevitch Khvalkovskiy

    IPC: H01L29/82 ,  H01L43/10 ,  H01L43/08

    CPC classification number: H01L43/10 ,  H01L43/08

    Abstract: A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer has a gradient in a magnetic ordering temperature such that a first portion of the free layer has a first magnetic ordering temperature higher than a second magnetic ordering temperature of a second portion of the free layer. The first portion of the free layer is closer to the reference layer than the second portion of the free layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Method and system for providing thermally assisted magnetic junctions having a multi-phase operation
    89.
    发明授权
    Method and system for providing thermally assisted magnetic junctions having a multi-phase operation 有权
    用于提供具有多相操作的热辅助磁结的方法和系统

    公开(公告)号：US09490000B2

    公开(公告)日：2016-11-08

    申请号：US14563307

    申请日：2014-12-08

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Dmytro Apalkov ,  Roman Chepulskyy

    IPC: G11C11/16 ,  H01L43/10 ,  H01L43/08

    CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer has a magnetic thermal stability coefficient having a plurality of magnetic thermal stability coefficient phases. A first phase magnetic thermal stability coefficient has a first slope below a first temperature. A second phase magnetic thermal stability coefficient has a second slope above the first temperature and below a second temperature greater than the first temperature. The first and second slopes are unequal at the first temperature. The magnetic thermal stability coefficient is zero only above the second temperature. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction.

    Abstract translation: 描述了可用于磁性装置的磁结。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 自由层具有具有多个磁热稳定系数相的磁热稳定系数。 第一相磁性热稳定系数具有低于第一温度的第一斜率。 第二相磁性热稳定系数具有高于第一温度的第二斜率，并且低于大于第一温度的第二温度。 第一和第二斜坡在第一个温度下不相等。 磁热稳定系数仅在第二温度以上为零。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

    Quantum computing device spin transfer torque magnetic memory
    90.
    发明授权
    Quantum computing device spin transfer torque magnetic memory 有权
    量子计算装置自旋转矩转矩磁存储器

    公开(公告)号：US09460397B2

    公开(公告)日：2016-10-04

    申请号：US14478877

    申请日：2014-09-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dmytro Apalkov ,  Matthew J. Carey ,  Mohamad Towfik Krounbi ,  Alexey Vasilyevitch Khvalkovskiy

    IPC: G06N99/00 ,  G11C11/16 ,  G11C11/14 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01F41/30 ,  G11C11/18 ,  H01F10/32

    CPC classification number: G06N99/002 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

    Abstract: A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.

    Abstract translation: 描述了量子计算设备磁存储器。 量子计算设备磁存储器与包括对应于至少一个量子位的至少一个量子器件的量子处理器耦合。 量子计算设备磁存储器包括与量子器件耦合的磁存储单元和耦合到磁存储单元的位线。 每个磁存储单元包括至少一个磁结。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为允许自由层在稳定的磁状态之间切换。 磁结被配置为使得自由层在没有热波动的情况下具有非零的初始写入自旋转移转矩。

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