公开(公告)号：US20060289756A1

公开(公告)日：2006-12-28

申请号：US11481973

申请日：2006-07-07

申请人： Yoshinori Nakayama

发明人： Yoshinori Nakayama

IPC分类号： G21K7/00

CPC分类号： H01J37/28 ,  G01B15/00 ,  G01B21/042 ,  H01J2237/2814 ,  H01J2237/2826

摘要： An electron-beam metrology system includes a specimen stage to mount a specimen on which a device pattern is formed, electron optics to radiate the device pattern with an electron-beam, a secondary electron detector to detect a secondary electron generated by the radiation of the electron-beam, and an information processing system to analyze a signal obtained from the secondary electron detector. A standard reference for metrology is held on the specimen stage, and the standard reference includes a first grating unit pattern including an array of gratings having pitch sizes which are verified by an optical method, and a second grating unit pattern including an array of gratings having pitch sizes which are smaller than he pitch sizes of the first grating unit pattern.

摘要翻译： 电子束计量系统包括用于安装其上形成有器件图案的样本的样品台，用电子束辐射器件图案的电子光学器件，用于检测由电子束的辐射产生的二次电子的二次电子检测器 电子束和用于分析从二次电子检测器获得的信号的信息处理系统。 标准参考标准保持在标本台上，标准参考文献包括第一光栅单元图案，其包括具有通过光学方法验证的间距尺寸的光栅阵列，以及第二光栅单元图案，其包括具有 间距尺寸小于第一光栅单元图案的间距尺寸。

公开(公告)号：US20060237644A1

公开(公告)日：2006-10-26

申请号：US10544668

申请日：2003-04-28

申请人： Yoshinori Nakayama

发明人： Yoshinori Nakayama

IPC分类号： G01N23/00

CPC分类号： G01B15/00 ,  H01J2237/2816

摘要： This invention provides an electron beam length measuring technology including a standard component for length measurement that has a finer standard dimension, and its producing method. The standard component for length measurement has a semiconductor member on which is arranged a pattern consisting of an array of first diffraction gratings whose pitch dimension is specified as an absolute dimension by an optical measurement method, wherein the pattern has a structure in which an array of second diffraction gratings different from the first diffraction gratings is arranged in a portion within the array of the first diffraction gratings in a predetermined cycle. Each one of the first diffraction gratings and the second diffraction gratings has a predetermined length and a predetermined width, respectively. The first diffraction gratings and the second diffraction gratings are arranged cyclically at respective predetermined intervals, and marks for specifying positions of the above-mentioned patterns are arranged in peripheral portions of the above-mentioned patterns. Moreover, the above-mentioned pattern contains an array pattern whose minimum pitch dimension is equal to or less than 100 nm. The electron beam batch exposure method is used as a pattern producing method.

摘要翻译： 本发明提供了一种电子束长度测量技术及其制造方法，该技术包括具有更精细的标准尺寸的用于长度测量的标准部件。 用于长度测量的标准部件具有半导体部件，其上布置有由第一衍射光栅阵列组成的图案，其第一衍射光栅的间距尺寸通过光学测量方法被指定为绝对尺寸，其中所述图案具有以下结构： 与第一衍射光栅不同的第二衍射光栅以预定周期布置在第一衍射光栅的阵列内的部分中。 第一衍射光栅和第二衍射光栅中的每一个分别具有预定长度和预定宽度。 第一衍射光栅和第二衍射光栅以相应的预定间隔循环布置，并且用于指定上述图案的位置的标记被布置在上述图案的周边部分中。 此外，上述图案包含最小间距尺寸等于或小于100nm的阵列图案。 使用电子束批量曝光方法作为图案制作方法。

公开(公告)号：US07078691B2

公开(公告)日：2006-07-18

申请号：US11028219

申请日：2005-01-04

申请人： Yoshinori Nakayama

发明人： Yoshinori Nakayama

IPC分类号： H01J37/304

CPC分类号： H01J37/28 ,  G01B15/00 ,  G01B21/042 ,  H01J2237/2814 ,  H01J2237/2826

摘要： The present invention is to provide a standard reference for metrology having finer reference sizes and high-precision electron-beam metrology including the same. By using a standard reference member in which a grating unit pattern of a pitch size proven by an optical diffraction angle by using a laser beam whose wavelength is absolutely guaranteed and a plurality of patterns having a finer size than that (100 nm or less) over the same substrate, fineness and correctness of calibration are made verifiable on a regular basis, and by using an electron-beam collective exposure method for pattern fabrication, fabrication of this standard reference is made possible.

摘要翻译： 本发明是提供具有更精细的参考尺寸和包括其的高精度电子束测量的计量学的标准参考。 通过使用通过使用绝对保证其波长的激光束并且具有比（100nm或更小）更细的尺寸的多个图案通过光学衍射角证明的俯仰尺寸的光栅单位图案的标准参考构件 校准的相同基板，细度和正确性可以定期验证，并且通过使用用于图案制造的电子束集体曝光方法，可以制造该标准参考。

公开(公告)号：US07034321B2

公开(公告)日：2006-04-25

申请号：US10624423

申请日：2003-07-21

申请人： Masaki Takakuwa ,  Yoshinori Nakayama ,  Gen Nakamura

发明人： Masaki Takakuwa ,  Yoshinori Nakayama ,  Gen Nakamura

IPC分类号： H01J37/304 ,  H01J37/244 ,  G01R29/24

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174

摘要： An electron beam exposure apparatus for exposing wafer by using an electron beam includes: an electron beam generator for generating the electron beam; a wafer stage for holding the wafer to be exposed; a current detector, provided on the wafer stage, for detecting a current of the electron beam; and a storage unit, provided on the wafer stage, for storing information indicating the current detected by the current detector.

摘要翻译： 用于通过使用电子束曝光晶片的电子束曝光装置包括：用于产生电子束的电子束发生器; 用于保持要暴露的晶片的晶片台; 设置在晶片台上的电流检测器，用于检测电子束的电流; 以及设置在晶片台上的用于存储指示由电流检测器检测到的电流的信息的存储单元。

公开(公告)号：US20060011869A1

公开(公告)日：2006-01-19

申请号：US11180629

申请日：2005-07-14

申请人： Noriyuki Tanaka ,  Ken Iizumi ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasuhiro Someda

发明人： Noriyuki Tanaka ,  Ken Iizumi ,  Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasuhiro Someda

IPC分类号： G21G5/00 ,  G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J2237/30472

摘要： In an electron-beam lithography system for performing a pattern drawing by causing electron beams to be switched ON/OFF at a high speed in an exposure/non-exposure portion, non-straight line property of beam shot dosage relative to beam ON time worsens dimension accuracy of the drawing pattern formed on a sample. In order to avoid this drawback, the characteristic of the beam shot dosage relative to the beam ON time is measured in advance, thereby creating correction data for the beam ON time beforehand. Then, at the time of performing the pattern drawing, the beam ON time is corrected based on the correction data so that desired beam shot dosage becomes acquirable.

摘要翻译： 在曝光/非曝光部分中通过使电子束以高速切换ON / OFF进行图形绘制的电子束光刻系统中，射束投射量相对于光束ON时间的非直线特性恶化 在样品上形成的绘图图形的尺寸精度。 为了避免这种缺点，预先测定射束投射量相对于光束导通时间的特性，从而事先产生光束接通时间的校正数据。 然后，在执行图形绘制时，基于校正数据校正光束接通时间，使得期望的射束剂量变得可获得。

公开(公告)号：US06953938B2

公开(公告)日：2005-10-11

申请号：US10670328

申请日：2003-09-26

申请人： Yuichi Iwasaki ,  Masato Muraki ,  Kenji Tamamori ,  Kouji Asano ,  Masayoshi Esashi ,  Yoshinori Nakayama ,  Shinichi Hashimoto ,  Yoshiaki Moro

发明人： Yuichi Iwasaki ,  Masato Muraki ,  Kenji Tamamori ,  Kouji Asano ,  Masayoshi Esashi ,  Yoshinori Nakayama ,  Shinichi Hashimoto ,  Yoshiaki Moro

IPC分类号： H01J37/147 ,  H01J37/304

CPC分类号： H01J37/045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1477 ,  H01J37/3174 ,  H01J2237/0437 ,  H01J2237/31774

摘要： A deflector which deflects a charged particle beam includes a substrate having an opening through which the charged particle beam should pass, and a deflection electrode which is arranged in the opening to deflect the charged particle beam and has a first conductive member and second conductive member, which are formed by plating. The second conductive member is formed on the surface of the first conductive member and is made of a material that is more difficult to oxidize than the first conductive member. The first conductive member is made of a material having smaller residual stress than the second conductive member.

摘要翻译： 使带电粒子束偏转的偏转器包括具有带电粒子束应通过的开口的基板和布置在开口中以偏转带电粒子束并具有第一导电构件和第二导电构件的偏转电极， 它们通过电镀形成。 第二导电构件形成在第一导电构件的表面上，并且由比第一导电构件更难氧化的材料制成。 第一导电部件由残留应力小于第二导电部件的材料制成。

公开(公告)号：US5562800A

公开(公告)日：1996-10-08

申请号：US308442

申请日：1994-09-19

申请人： Yoshio Kawamura ,  Yoshifumi Kawamoto ,  Fumihiko Uchida ,  Kenichi Mizuishi ,  Natsuki Yokoyama ,  Eiichi Murakami ,  Yoshinori Nakayama ,  Eiichi Seya

发明人： Yoshio Kawamura ,  Yoshifumi Kawamoto ,  Fumihiko Uchida ,  Kenichi Mizuishi ,  Natsuki Yokoyama ,  Eiichi Murakami ,  Yoshinori Nakayama ,  Eiichi Seya

IPC分类号： B65G49/00 ,  B65G49/07 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/677

CPC分类号： H01L21/67748 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67742 ,  Y10S414/135 ,  Y10S414/139 ,  Y10S438/935

摘要： A wafer transport method includes the steps of preparing a semiconductor process equipment having a transport chamber and a process chamber. An interface means connects the transport chamber to the process chamber. A transport means transports a semiconductor wafer from the transport chamber to the process chamber by way of the interface means. The transport means mounting a substrate is inserted into a communicating corridor including a supply means and an exhaust means. The substrate is transported while performing the supply and exhaust by sequentially controlling a supply shutoff means, an exhaust shutoff means, and a communicating shutoff means according to the position of a conductance part formed of a gap between the transport means and the communicating corridor. Thus, the substrate is transported at a high throughput without contamination of the substrate while keeping the different atmospheric conditions for the transport chamber and the process chamber, thereby manufacturing a semiconductor device with high performance capabilities.

摘要翻译： 晶片输送方法包括准备具有输送室和处理室的半导体工艺设备的步骤。 接口装置将输送室连接到处理室。 传送装置通过接口装置将半导体晶片从传送室传送到处理室。 安装基板的输送装置被插入到包括供给装置和排气装置的通信走廊中。 通过根据由输送装置和通信走廊之间的间隙形成的电导部分的位置依次控制供给切断装置，排气关闭装置和通信切断装置，在进行供给和排出的同时运送基板。 因此，在保持输送室和处理室的不同大气条件的同时，以高通量输送基板而不污染基板，从而制造具有高性能的半导体器件。

公开(公告)号：US5520297A

公开(公告)日：1996-05-28

申请号：US260369

申请日：1994-06-14

申请人： Teruyuki Kagami ,  Sakae Yaita ,  Niro Katane ,  Mitsuo Tanabe ,  Yoshinori Nakayama ,  Hidetoshi Satoh

发明人： Teruyuki Kagami ,  Sakae Yaita ,  Niro Katane ,  Mitsuo Tanabe ,  Yoshinori Nakayama ,  Hidetoshi Satoh

IPC分类号： H01L21/027 ,  G03F1/20 ,  G03F1/40 ,  B44C1/22 ,  C25F3/00

CPC分类号： G03F1/20 ,  Y10S438/928 ,  Y10T428/24273

摘要： A semiconductor substrate has a plurality of chip portions and chip separating portions for partitioning the plurality of chip portions into each other. The plurality of chip portions and the separating portions are etched on one side of the semiconductor substrate so that each of the plurality of chip portions is provided with stencil patterns. Furthermore, the plurality of chip portions and chip separating portions are etched on the other side of the semiconductor substrate so that the stencil patterns are exposed and the plurality of chip portions are capable of being substantially separated from each other.

摘要翻译： 半导体衬底具有多个芯片部分和用于将多个芯片部分彼此分隔的芯片分离部分。 多个芯片部分和分离部分被蚀刻在半导体衬底的一侧上，使得多个芯片部分中的每一个设置有模板图案。 此外，在半导体基板的另一侧蚀刻多个芯片部分和芯片分离部分，使得模板图案被暴露，并且多个芯片部分能够彼此基本分离。

公开(公告)号：US4256483A

公开(公告)日：1981-03-17

申请号：US84435

申请日：1979-10-12

申请人： Shuichiro Asao ,  Yoshinori Nakayama ,  Ryo Yoshida ,  Seizo Sumida ,  Shunichi Hashimoto

发明人： Shuichiro Asao ,  Yoshinori Nakayama ,  Ryo Yoshida ,  Seizo Sumida ,  Shunichi Hashimoto

IPC分类号： A01N43/90 ,  C07D487/04 ,  A01N43/58

CPC分类号： C07D487/04 ,  A01N43/90

摘要： A compound of the formula: ##STR1## wherein R is a methyl group or an ethyl group shows a strong herbicidal activity against a wide variety of weeds without any material chemical injury to crop plants.

摘要翻译： 下式的化合物：其中R是甲基或乙基，对各种杂草表现出强的除草活性，对作物没有任何物质化学损伤。

公开(公告)号：US4237122A

公开(公告)日：1980-12-02

申请号：US48745

申请日：1979-06-15

申请人： Shuichiro Asao ,  Shigeo Yamamoto ,  Yoshio Hisada ,  Yoshinori Nakayama ,  Chiyozo Takayama

发明人： Shuichiro Asao ,  Shigeo Yamamoto ,  Yoshio Hisada ,  Yoshinori Nakayama ,  Chiyozo Takayama

IPC分类号： A01N57/32 ,  C07D233/80 ,  C07F9/6506 ,  A01N57/16 ,  C07D233/40

CPC分类号： C07F9/65061 ,  A01N57/32

摘要： An imidazolidinedione compound of the formula: ##STR1## wherein X is a chlorine atom or a bromine atom, Y is an oxygen atom or a sulfur atom, and R.sub.1 and R.sub.2 are each a C.sub.1 -C.sub.4 alkyl group, a C.sub.1 -C.sub.4 alkoxy group, a C.sub.1 -C.sub.4 alkylthio group, an ar(C.sub.1 -C.sub.4)alkylthio group, a C.sub.1 -C.sub.4 alkoxy(C.sub.2 -C.sub.4)alkoxy group, a phenyl group, a phenoxy group, a C.sub.1 -C.sub.4 alkylthiophenoxy group, a C.sub.1 -C.sub.8 alkylamino group, a C.sub.2 -C.sub.8 alkenylamino group or a cyano(C.sub.1 -C.sub.4)alkylamino group, which is useful as an agricultural chemical such as insecticides, acaricides, nematocides and/or fungicides with high safety to mammalian animals and human beings.

摘要翻译： 下式的咪唑烷二酮化合物：其中X是氯原子或溴原子，Y是氧原子或硫原子，R 1和R 2各自是C 1 -C 4烷基，C 1 -C 4烷氧基 ，C1-C4烷硫基，芳（C1-C4）烷硫基，C1-C4烷氧基（C2-C4）烷氧基，苯基，苯氧基，C1-C4烷硫基苯氧基，C1-C8 烷基氨基，C 2 -C 8链烯基氨基或氰基（C 1 -C 4）烷基氨基，其可用作对哺乳动物和人具有高安全性的农药，例如杀虫剂，杀螨剂，杀线虫剂和/或杀真菌剂。