公开(公告)号：US5846597A

公开(公告)日：1998-12-08

申请号：US876305

申请日：1997-06-16

申请人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

发明人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

IPC分类号： C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1225

摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

公开(公告)号：US5759923A

公开(公告)日：1998-06-02

申请号：US615806

申请日：1996-03-14

申请人： Larry D. McMillan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Tatsuo Otsuki ,  Shinichiro Hayashi

发明人： Larry D. McMillan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Tatsuo Otsuki ,  Shinichiro Hayashi

IPC分类号： B05D1/00 ,  B05D3/04 ,  B05D7/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C18/12 ,  C23C18/14 ,  C23C26/02 ,  C30B7/00 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/115 ,  H01L41/24 ,  H05K3/10 ,  H01L21/00

CPC分类号： H01L21/316 ,  B05D1/00 ,  B05D1/60 ,  B05D3/0493 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/1212 ,  C23C18/1287 ,  C23C18/14 ,  C23C26/02 ,  C30B29/68 ,  C30B7/00 ,  H01L21/314 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L41/316 ,  H01L28/55 ,  H05K3/105

摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.

摘要翻译： 制备在二甲苯溶剂中包含硅的前体液体，将基底放置在真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度以沉积一层 前体液体在基底上。 将液体干燥，烘烤和退火以在基底上形成二氧化硅或硅玻璃的薄膜。 然后，完成集成电路以将至少一部分二氧化硅或硅玻璃层作为集成电路中的电子器件的绝缘体。