公开(公告)号：US5759923A

公开(公告)日：1998-06-02

申请号：US615806

申请日：1996-03-14

申请人： Larry D. McMillan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Tatsuo Otsuki ,  Shinichiro Hayashi

发明人： Larry D. McMillan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Tatsuo Otsuki ,  Shinichiro Hayashi

IPC分类号： B05D1/00 ,  B05D3/04 ,  B05D7/24 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/46 ,  C23C16/48 ,  C23C16/52 ,  C23C18/12 ,  C23C18/14 ,  C23C26/02 ,  C30B7/00 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L27/115 ,  H01L41/24 ,  H05K3/10 ,  H01L21/00

CPC分类号： H01L21/316 ,  B05D1/00 ,  B05D1/60 ,  B05D3/0493 ,  C23C16/4412 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4558 ,  C23C16/46 ,  C23C16/482 ,  C23C16/52 ,  C23C18/1212 ,  C23C18/1287 ,  C23C18/14 ,  C23C26/02 ,  C30B29/68 ,  C30B7/00 ,  H01L21/314 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/56 ,  H01L28/60 ,  H01L41/316 ,  H01L28/55 ,  H05K3/105

摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.

摘要翻译： 制备在二甲苯溶剂中包含硅的前体液体，将基底放置在真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度以沉积一层 前体液体在基底上。 将液体干燥，烘烤和退火以在基底上形成二氧化硅或硅玻璃的薄膜。 然后，完成集成电路以将至少一部分二氧化硅或硅玻璃层作为集成电路中的电子器件的绝缘体。

公开(公告)号：US6104049A

公开(公告)日：2000-08-15

申请号：US228578

申请日：1999-01-11

申请人： Narayan Solayappan ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Shinichiro Hayashi ,  Tatsuo Otsuki

发明人： Narayan Solayappan ,  Vikram Joshi ,  Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Shinichiro Hayashi ,  Tatsuo Otsuki

IPC分类号： G11C11/22 ,  H01L21/02 ,  H01L21/316 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L28/55 ,  H01L28/60 ,  H01L21/768

摘要： A coating of liquid precursor containing a metal is applied to a first electrode, baked on a hot plate in oxygen ambient at a temperature not exceeding 300.degree. C. for five minutes, then RTP annealed at 675.degree. C. for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700.degree. C. for one hour to form a thin film of layered superlattice material with a thickness not exceeding 90 nm. A second electrode is applied to form a capacitor, and a post-anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700.degree. C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8.ltoreq.u.ltoreq.1.0, 2.0.ltoreq.v.ltoreq.2.3, and 1.9.ltoreq.w.ltoreq.2.1.

摘要翻译： 将包含金属的液体前体涂层施加到第一电极，在氧气环境中在不高于300℃的温度下在热板上烘烤五分钟，然后在675℃下进行RTP退火30秒。 然后将涂层在氧气或氮气环境中在700℃下退火1小时，以形成厚度不超过90nm的层状超晶格材料薄膜。 施加第二电极以形成电容器，并且在氧气或氮气环境中在不超过700℃的温度下进行后退火。如果该材料是钽酸铋锶，则该前体含有痣的锶，v 铋的摩尔当量和钽的摩尔当量，其中0.8为2.0，2.0

公开(公告)号：US5843516A

公开(公告)日：1998-12-01

申请号：US714774

申请日：1996-09-16

申请人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

发明人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

IPC分类号： C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1225

摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和铋2-乙基己酸酯的前体液体，将基材置于真空沉积室内，少量六甲基二硅氮烷 加入到前体液体中，雾气流入沉积室，同时将室保持在环境温度，以将一层前体液体沉积在基底上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。 然后，完成集成电路以将集成电路的部件中的至少一部分分层超晶格材料膜包括在内。

公开(公告)号：US5849071A

公开(公告)日：1998-12-15

申请号：US876304

申请日：1997-06-16

申请人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

发明人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

IPC分类号： C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  C09D7/12 ,  C09K15/32

CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1225

摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a solvent such as xylenes/methyl ethyl ketone and a small amount of hexamethyl-disilazane. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.

摘要翻译： 在溶剂如二甲苯/甲基乙基酮和少量六甲基二硅氮烷中，包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。

公开(公告)号：US5846597A

公开(公告)日：1998-12-08

申请号：US876305

申请日：1997-06-16

申请人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

发明人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

IPC分类号： C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  B05D5/12

CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1225

摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

公开(公告)号：US06447838B1

公开(公告)日：2002-09-10

申请号：US08543827

申请日：1995-10-16

申请人： Masamichi Azuma ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Shinichiro Hayashi ,  Toru Nasu ,  Yoshihiro Shimada ,  Akihiro Matsuda ,  Tatsuo Otsuki ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

发明人： Masamichi Azuma ,  Eiji Fujii ,  Yasuhiro Uemoto ,  Shinichiro Hayashi ,  Toru Nasu ,  Yoshihiro Shimada ,  Akihiro Matsuda ,  Tatsuo Otsuki ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Carlos A. Paz de Araujo

IPC分类号： B05D512

CPC分类号： H01L28/75 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/65 ,  Y10T29/42

摘要： A Ti/TiN adhesion/barrier layer is formed on a substrate and annealed. The anneal step is performed at a temperature within a good morphology range of 100° C. above a base barrier anneal temperature that depends on the thickness of said barrier layer. The base barrier anneal temperature is about 700° C. for a barrier thickness of about 1000 Å and about 800° C. for a barrier thickness of about 3000 Å. The barrier layer is 800 Å thick or thicker. A first electrode is formed, followed by a BST dielectric layer and a second electrode. A bottom electrode structure in which a barrier layer of TiN is sandwiched between two layers of platinum is also disclosed. The process and structures also produce good results with other capacitor dielectrics, including ferroelectrics such as strontium bismuth tantalate.

摘要翻译： 在基板上形成Ti / TiN粘合/阻挡层并退火。 退火步骤在取决于所述阻挡层的厚度的基本阻挡退火温度之上的100℃的良好形态范围内进行。 对于约3000的屏障厚度，对于约1000和约800℃的阻挡层厚度，基底阻挡退火温度为约700℃。 阻挡层厚度为800或更厚。 形成第一电极，随后是BST介电层和第二电极。 还公开了其中TiN阻挡层夹在两层铂之间的底部电极结构。 该工艺和结构也与其他电容器电介质（包括铁电锶钽酸锶）等产生良好的结果。

公开(公告)号：US06924997B2

公开(公告)日：2005-08-02

申请号：US10381235

申请日：2001-09-25

申请人： Zheng Chen ,  Vikram Joshi ,  Myoungho Lim ,  Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Yoshihisa Kato ,  Tatsuo Otsuki ,  Yasuhiro Shimada

发明人： Zheng Chen ,  Vikram Joshi ,  Myoungho Lim ,  Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Yoshihisa Kato ,  Tatsuo Otsuki ,  Yasuhiro Shimada

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A ferroelectric memory 636 includes a group of memory cells (645, 12, 201, 301, 401, 501), each cell having a ferroelectric memory element (44, 218, etc.), a drive line (122, 322, 422, 522 etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (25, 49, 125, 325, 425, 525, etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (20, 42, 120, 320, 420, etc.) between the memory cells and the bit line, a set switch (14, 114, 314, 414, 514, etc.) connected between the drive line and the memory cells, and a reset switch (16, 116, 316, 416, 516, etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.

摘要翻译： 铁电存储器636包括一组存储单元（645,12,21,301,401,501），每个单元具有铁电存储元件（44,218等），驱动线（122,322,422， 522等），在其上放置用于将信息写入到存储器单元组的电压，位线（25,49,125,325,425,525等），其中要从该组存储器单元读出的信息 放置存储器单元，在存储器单元和位线之间的前置放大器（20,42,120,320,420等），连接在存储器单元之间的设定开关（14,114,314,414,514等） 驱动线和存储器单元，以及与前置放大器并联连接到存储器单元的复位开关（16,116,316,416,516等）。 通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。 在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

公开(公告)号：US06830623B2

公开(公告)日：2004-12-14

申请号：US10096893

申请日：2002-03-12

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： B65G100

CPC分类号： C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691

摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

摘要翻译： 将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。 通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。 通常物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

公开(公告)号：US06448190B1

公开(公告)日：2002-09-10

申请号：US09316917

申请日：1999-05-21

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2100

CPC分类号： H01L21/316 ,  H01L21/3144 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a liquid precursor to a substrate having a first surface and a second surface and treating the liquid precursor. The first surface has different physical properties than the second surface such that a solid thin film forms on the first surface but does not form on the second surface. The substrate is washed after formation of said solid thin film to remove any residues of said liquid from the second substrate surface.

摘要翻译： 通过将液体前体施加到具有第一表面和第二表面的基底并处理液体前体，在制造集成电路期间选择性地形成固体材料薄膜。 第一表面具有与第二表面不同的物理性质，使得在第一表面上形成固体薄膜，但不形成在第二表面上。 在形成所述固体薄膜之后洗涤底物以从第二基材表面除去所述液体的任何残余物。

公开(公告)号：US06413883B1

公开(公告)日：2002-07-02

申请号：US09243254

申请日：1999-02-03

申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L2131

CPC分类号： C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691

摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

摘要翻译： 将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。 通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。 通常，物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。