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103 条记录 (耗时 0.036 秒)

    Liquid source formation of thin films using hexamethyl-disilazane
    6.
    发明授权
    Liquid source formation of thin films using hexamethyl-disilazane 失效
    使用六甲基二硅氮烷的液体源形成薄膜

    公开(公告)号：US5843516A

    公开(公告)日：1998-12-01

    申请号：US714774

    申请日：1996-09-16

    申请人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

    发明人： Gary F. Derbenwick ,  Larry D. McMillan ,  Narayan Solayappan ,  Michael C. Scott ,  Carlos A. Paz de Araujo ,  Shinichiro Hayashi

    IPC分类号： C23C18/12 ,  H01L21/314 ,  H01L21/316 ,  B05D5/12

    CPC分类号： H01L21/31691 ,  C23C18/1216 ,  C23C18/1225

    摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

    摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和铋2-乙基己酸酯的前体液体，将基材置于真空沉积室内，少量六甲基二硅氮烷 加入到前体液体中，雾气流入沉积室，同时将室保持在环境温度，以将一层前体液体沉积在基底上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。 然后，完成集成电路以将集成电路的部件中的至少一部分分层超晶格材料膜包括在内。

    Ferroelectric memory and method of operating same
    7.
    发明授权
    Ferroelectric memory and method of operating same 有权
    铁电存储器和操作方法相同

    公开(公告)号：US06924997B2

    公开(公告)日：2005-08-02

    申请号：US10381235

    申请日：2001-09-25

    申请人： Zheng Chen ,  Vikram Joshi ,  Myoungho Lim ,  Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Yoshihisa Kato ,  Tatsuo Otsuki ,  Yasuhiro Shimada

    发明人： Zheng Chen ,  Vikram Joshi ,  Myoungho Lim ,  Carlos A. Paz de Araujo ,  Larry D. McMillan ,  Yoshihisa Kato ,  Tatsuo Otsuki ,  Yasuhiro Shimada

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A ferroelectric memory 636 includes a group of memory cells (645, 12, 201, 301, 401, 501), each cell having a ferroelectric memory element (44, 218, etc.), a drive line (122, 322, 422, 522 etc.) on which a voltage for writing information to the group of memory cells is placed, a bit line (25, 49, 125, 325, 425, 525, etc.) on which information to be read out of the group of memory cells is placed, a preamplifier (20, 42, 120, 320, 420, etc.) between the memory cells and the bit line, a set switch (14, 114, 314, 414, 514, etc.) connected between the drive line and the memory cells, and a reset switch (16, 116, 316, 416, 516, etc.) connected to the memory cells in parallel with the preamplifier. The memory is read by placing a voltage less than the coercive voltage of the ferroelectric memory element across a memory element. Prior to reading, noise from the group of cells is discharged by grounding both electrodes of the ferroelectric memory element.

    摘要翻译： 铁电存储器636包括一组存储单元（645,12,21,301,401,501），每个单元具有铁电存储元件（44,218等），驱动线（122,322,422， 522等），在其上放置用于将信息写入到存储器单元组的电压，位线（25,49,125,325,425,525等），其中要从该组存储器单元读出的信息 放置存储器单元，在存储器单元和位线之间的前置放大器（20,42,120,320,420等），连接在存储器单元之间的设定开关（14,114,314,414,514等） 驱动线和存储器单元，以及与前置放大器并联连接到存储器单元的复位开关（16,116,316,416,516等）。 通过将小于铁电存储元件的矫顽电压的电压放置在存储元件上来读取存储器。 在读取之前，通过使铁电存储元件的两个电极接地来放电来自该组电池的噪声。

    Method of liquid deposition by selection of liquid viscosity and other precursor properties
    8.
    发明授权
    Method of liquid deposition by selection of liquid viscosity and other precursor properties 有权
    通过选择液体粘度和其他前体性质进行液体沉积的方法

    公开(公告)号：US06413883B1

    公开(公告)日：2002-07-02

    申请号：US09243254

    申请日：1999-02-03

    申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    IPC分类号： H01L2131

    CPC分类号： C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691

    摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

    摘要翻译： 将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。 通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。 通常，物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

    Methods and apparatus for material deposition using primer
    9.
    发明授权
    Methods and apparatus for material deposition using primer 失效
    使用底漆进行材料沉积的方法和装置

    公开(公告)号：US5972428A

    公开(公告)日：1999-10-26

    申请号：US611414

    申请日：1996-03-05

    申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Masamichi Azuma ,  Carlos A. Paz de Araujo

    发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Masamichi Azuma ,  Carlos A. Paz de Araujo

    IPC分类号： H01L21/314 ,  H01L21/316 ,  C23C16/00 ,  B05D1/02

    CPC分类号： H01L21/31691

    摘要： A liquid primer is misted, flowed into a deposition chamber and deposited on a substrate. A liquid precursor is then misted, flowed into a deposition chamber and deposited on the substrate. The primer and precursor are dried to form a solid thin film, which is then annealed to form a part of an electronic component in an integrated circuit, such as the dielectric in a memory cell. The primer is a solvent, and the precursor includes a metal carboxylate, a metal alkoxide, or a metal alkoxycarboxylate in a precursor solvent. Preferably, the primer and the precursor solvent are the same solvent, such as 2-methoxyethanol, xylenes, or n-butyl acetate.

    摘要翻译： 液体底漆被雾化，流入沉积室并沉积在基底上。 然后液体前体被雾化，流入沉积室并沉积在基底上。 将底漆和前体干燥以形成固体薄膜，然后将其退火以形成集成电路中的电子部件的一部分，例如存储单元中的电介质。 引物是溶剂，前体在前体溶剂中包括金属羧酸盐，金属醇盐或烷氧基羧酸金属盐。 优选地，底漆和前体溶剂是相同的溶剂，例如2-甲氧基乙醇，二甲苯或乙酸正丁酯。

    Method of liquid deposition by selection of liquid viscosity and other precursor properties
    10.
    发明授权
    Method of liquid deposition by selection of liquid viscosity and other precursor properties 失效
    通过选择液体粘度和其他前体性质进行液体沉积的方法

    公开(公告)号：US06830623B2

    公开(公告)日：2004-12-14

    申请号：US10096893

    申请日：2002-03-12

    申请人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    发明人： Shinichiro Hayashi ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    IPC分类号： B65G100

    CPC分类号： C23C18/1216 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31691

    摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.

    摘要翻译： 将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。 通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。 通常物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。