摘要:
A sealing structure is provided without irradiating a pixel portion of a light emitting element by heat or UV light. By the sealing structure, the reliability is enhanced by blocking out oxygen and moisture, and preventing the deterioration of the light emitting element. The sealing structure in which a whole surface of the pixel portion is covered with a sealing material and which has an excellent sealing property is manufactured without being exposed to heat or UV light. In this case, a catalyst for curing a sealing material is formed as a film on a substrate, and a sealing material for covering a pixel portion is applied to the other substrate. Then, the both substrates are bonded together.
摘要:
A light emitting device having a structure in which oxygen and moisture are prevented from reaching light emitting elements, and a method of manufacturing the same, are provided. Further, the light emitting elements are sealed by using a small number of process steps, without enclosing a drying agent. The present invention has a top surface emission structure. A substrate on which the light emitting elements are formed is bonded to a transparent sealing substrate. The structure is one in which a transparent second sealing material covers the entire surface of a pixel region when bonding the two substrates, and a first sealing material (having a higher viscosity than the second sealing material), which contains a gap material (filler, fine particles, or the like) for protecting a gap between the two substrates, surrounds the pixel region. The two substrates are seated by the first sealing material and the second sealing material. Further, reaction between electrodes of the light emitting elements (cathodes or anodes) and the sealing materials can be prevented by covering the electrodes with a transparent protective layer, for example, CaF2, MgF2, or BaF2.
摘要:
An active matrix light emitting device of which luminance characteristic does not vary among light emitting elements of respective pixels, and which can be realized even in a high definition display panel is disclosed. In the light emitting device, a light emitting material is interposed between a first electrode and a second electrode electrically connected to an auxiliary wiring, not only in a peripheral portion but also in a pixel portion. A layer containing the light emitting material comprises a first buffer layer, a light emitting layer, and a second buffer layer. In the pixel portion, either one or both of the first and the second buffer layer are interposed between the auxiliary wiring and the second electrode where the second electrode and the auxiliary wiring are electrically connected.
摘要:
There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
摘要:
A light emitting device including a thin film transistor and an inorganic EL element, and a manufacturing method thereof. The present invention provides a manufacturing method of a light emitting device, including a step of forming a light emitting layer including at least a layer made from an inorganic fluorescent material over a first electrode while heating a substrate provided with the first electrode at a temperature in the range of 100 to 1200° C., preferably 200 to 800° C., and a step of forming a second electrode and a thin film transistor after the light emitting layer is formed.
摘要:
In the present invention, an electron injection composition for a light-emitting element, comprising a pyridine derivative represented by general formula 1 and at least one of an alkali metal, an alkali earth metal, and a transition metal, is used to form an electron injection layer in a portion of a layer including luminescent material in a light-emitting element, and it is also an object of the present invention to provide, by using the composition, a light-emitting element that has more superior characteristics and a longer lifetime as compared to conventional ones. where each of X1 and X2 represents: (where each of R1 to R8 represents hydrogen, halogen, a cyano group, an alkyl group having 1 to 10 carbon atoms, a haloalkyl group having 1 to 10 carbon atoms, an alkoxyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group, or a substituted or unsbstituted heterocyclic group.)
摘要:
There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
摘要:
Epoxidized C6-C12 cyclohydrocarbon compounds, for example, epoxidized C6-C12 cycloalkanes, cycloalkenes and/or cycloalkadienes are converted to cycloalkanols, cycloalkanones and cycloalkanes by hydrogenating the epoxidized C6-C12 cyclohydrocarbon compounds with hydrogen under a pressure of 0.1 to 5.4 MPa at a temperature of 100 to 280° C. in the presence of a catalyst containing at least one platinum group metal, for example, Pd or Ru.
摘要:
The process of the present invention comprises the steps of (a) a step of dissolving a condensed tannin powder in an aqueous alkaline solution, (b) a step of admixing an aqueous aldehyde solution with the aqueous solution obtained in the step (a), (c) a step of adding the aqueous solution obtained by the above step (b) to a hydrophobic solvent containing a polyether type nonionic surfactant under heating and stirring to disperse the aqueous solution in the form of droplets in said hydrophobic solvent and (d) evaporating water components from the above-mentioned droplets to form a spherical and gelled insoluble tannins. Water content of the gel can be widely controlled as 5 to 90% as compared with the conventional adsorbent and the network structure and molecular space are changed depending on the size of the metal ion to be adsorbed so that a gelled insoluble tannin which can increase an adsorption capacity of metals can be obtained. Also, when it is used as an adsorbent, it is not necessary to be pulverized and a gelled insoluble tannin having a desired particle size and water content can be obtained.
摘要:
A method for predicting printing density for use in a stencil printing in which an ink is transferred from a rotated printing drum to a printing sheet through a perforated stencil, by pressing the printing sheet and the printing drum against each other, is provided. The method comprises (a) a first step of measuring printing densities (OD) on at least two copies of print at corresponding printed portions thereof, the copies of print being obtained under different conditions of F/f, in which F is a pressing force at which the printing sheet is pressed to the drum and f is a rotation speed of the drum, (b) a second step of statistically processing the printing densities measured in the first step to obtain a function of printing density and F/f value, and (c) a third step of calculating a printing density at a desired pressing force and a desired rotation speed based on the function obtained in the second step. The function may be OD=V×{square root over ( )}(F/f)+W, in which V and W means constants that may be obtained by least-squares method.