公开(公告)号：US20120037305A1

公开(公告)日：2012-02-16

申请号：US13281551

申请日：2011-10-26

申请人： Akio Yamashita ,  Yumiko Fukumoto ,  Yuugo Goto

发明人： Akio Yamashita ,  Yumiko Fukumoto ,  Yuugo Goto

IPC分类号： B32B37/14 ,  B32B37/12 ,  B32B38/10 ,  B32B37/02

CPC分类号： G02F1/133516 ,  B32B37/12 ,  B32B37/24 ,  B32B38/10 ,  B32B2037/243 ,  B32B2457/202 ,  B32B2551/00 ,  G02B5/201 ,  G02B5/223

摘要： To provide a method of manufacturing an optical film formed on a plastic substrate. There is provided a method of manufacturing an optical film including the steps of laminating a separation layer and an optical filter on a first substrate, separating the optical filter from the first substrate, attaching the optical filter to a second substrate. Since the optical film manufactured according to the invention has flexibility, it can be provided on a portion or a display device having a curved surface. Further, the optical film is not processed at high temperatures, and hence, an optical film having high yield with high reliability can be formed. Furthermore, an optical film having an excellent impact resistance property can be formed.

摘要翻译： 提供一种制造形成在塑料基板上的光学膜的方法。 提供一种制造光学膜的方法，包括在第一基板上层压分离层和滤光器的步骤，将滤光器与第一基板分离，将滤光器连接到第二基板。 由于根据本发明制造的光学膜具有柔性，可以设置在具有弯曲表面的部分或显示装置上。 此外，光学膜不能在高温下进行处理，因此可以形成具有高可靠性的高产率的光学膜。 此外，可以形成具有优异抗冲击性能的光学膜。

公开(公告)号：US08067294B2

公开(公告)日：2011-11-29

申请号：US12566040

申请日：2009-09-24

申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01L21/20

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

摘要翻译： 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

公开(公告)号：US07838993B2

公开(公告)日：2010-11-23

申请号：US11919635

申请日：2006-05-26

申请人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

发明人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

IPC分类号： H01L23/52

CPC分类号： H01L27/13 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/5227 ,  H01L23/552 ,  H01L23/576 ,  H01L23/585 ,  H01L27/105 ,  H01L27/11509 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/78618 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/30105 ,  H01Q1/2208 ,  H01L2924/00

摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.

摘要翻译： 本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而不接触的半导体器件安装在商业产品上时，也可以根据用途来控制通信范围。 本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。 第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。 第二导电膜的第一端部和第二端部彼此不连接。

公开(公告)号：US07666719B2

公开(公告)日：2010-02-23

申请号：US12149131

申请日：2008-04-28

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US07541228B2

公开(公告)日：2009-06-02

申请号：US12003983

申请日：2008-01-04

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/302

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

摘要翻译： 本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。 本发明的另一个目的是提供一种指定半导体器件的方法。 本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体 通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部 并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

公开(公告)号：US07459726B2

公开(公告)日：2008-12-02

申请号：US10775328

申请日：2004-02-11

申请人： Kiyoshi Kato ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L31/12

CPC分类号： H01L27/1266 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1214 ,  H01L27/3209 ,  H01L27/3227 ,  H01L29/78603 ,  H01L29/78621

摘要： A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes semiconductor elements stacked by transferring a semiconductor element formed on a different substrate. A resin film is formed between the stacked semiconductor elements and a metal oxide film is partially formed between the stacked semiconductor elements as well. A first electric signal is converted to an optical signal in a light emitting element electrically connected to one of the stacked semiconductor elements. Meanwhile, the optical signal is converted to a second electric signal in a light receiving element electrically connected to another one of the stacked semiconductor elements.

摘要翻译： 一种半导体器件，具有由便宜的玻璃基板形成的能够处理大量信息并以较高数据速率工作的高性能集成电路。 半导体器件包括通过转移形成在不同衬底上的半导体元件而堆叠的半导体元件。 在层叠的半导体元件之间形成树脂膜，并且也在层叠的半导体元件之间部分地形成金属氧化物膜。 第一电信号被转换成电连接到堆叠的半导体元件之一的发光元件中的光信号。 同时，光电信号被转换为与另一个堆叠的半导体元件电连接的光接收元件中的第二电信号。

公开(公告)号：US20080206959A1

公开(公告)日：2008-08-28

申请号：US12149131

申请日：2008-04-28

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/20

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

公开(公告)号：US20080171484A1

公开(公告)日：2008-07-17

申请号：US10577648

申请日：2004-11-18

申请人： Akio Yamashita ,  Yumiko Fukumoto ,  Yuugo Goto

发明人： Akio Yamashita ,  Yumiko Fukumoto ,  Yuugo Goto

IPC分类号： H01J9/20

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  H01L27/1214 ,  H01L27/3244 ,  H01L51/56 ,  H01L2227/326

摘要： To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method using a plastic substrate. The method of manufacturing a display device includes metal film, an oxide film, and an optical filter on a first substrate; separating layers including the optical filter from the first substrate; attaching layers including the optical filter to a second substrate; forming a layer including a pixel on a surface of a third substrate; attaching the layer including the pixel to a fourth substrate; and attaching layers including the optical filter to another surface of the third substrate.

摘要翻译： 提供一种以高产率制造具有优异抗冲击性能的显示装置的方法，特别是使用塑料基板的方法。 制造显示装置的方法包括在第一基板上的金属膜，氧化物膜和滤光器; 从所述第一基板分离包括所述滤光器的层; 将包括所述滤光器的层附接到第二基板; 在第三基板的表面上形成包括像素的层; 将包括所述像素的层附着到第四基板; 以及将包括所述滤光器的层附接到所述第三基板的另一表面。

公开(公告)号：US07332381B2

公开(公告)日：2008-02-19

申请号：US10283223

申请日：2002-10-30

申请人： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

发明人： Junya Maruyama ,  Toru Takayama ,  Yuugo Goto

IPC分类号： H01L21/00

CPC分类号： H01L21/76275 ,  H01L21/308 ,  H01L21/76251 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L27/32 ,  H01L29/78603 ,  H01L51/0024 ,  H01L51/56

摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.

摘要翻译： 具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是 以及制造半导体器件的方法。 在本发明中，元件不形成在塑料膜上。 相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂 用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层） （第二接合部件（16））。 以这种方式，本发明实现了薄膜的薄化和重量的减轻。

公开(公告)号：US20070218650A1

公开(公告)日：2007-09-20

申请号：US11798094

申请日：2007-05-10

申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.