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    Semiconductor device using magnetic domain wall movement and method of manufacturing the same
    81.
    发明授权
    Semiconductor device using magnetic domain wall movement and method of manufacturing the same 失效
    使用磁畴壁运动的半导体器件及其制造方法

    公开(公告)号：US07889533B2

    公开(公告)日：2011-02-15

    申请号：US11727689

    申请日：2007-03-28

    Applicant: In-jun Hwang ,  Sung-chul Lee

    Inventor： In-jun Hwang ,  Sung-chul Lee

    IPC: G11C19/08

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841

    Abstract: A semiconductor device using a magnetic domain wall movement and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a magnetic layer that is formed on a substrate and has a plurality of magnetic domains, and a unit that supplies energy to move a magnetic domain wall in the magnetic layer. The magnetic layer is formed parallel to the substrate, and includes a plurality of prominences and a plurality of depressions alternately formed along a lengthwise direction thereof. The magnetic layer has a stepped form that secures a reliable movement of the magnetic domain wall in units of one bit.

    Abstract translation: 提供了使用磁畴壁移动的半导体器件和制造该半导体器件的方法。 半导体器件包括形成在基板上并具有多个磁畴的磁性层，以及提供能量以移动磁性层中的磁畴壁的单元。 磁性层与基板平行地形成，并且包括沿其长度方向交替形成的多个凸起和多个凹陷。 磁性层具有阶梯形状，其以一位为单位确保磁畴壁的可靠移动。

    Reaction vessel and reaction device
    82.
    发明授权
    Reaction vessel and reaction device 有权
    反应容器和反应装置

    公开(公告)号：US07842260B2

    公开(公告)日：2010-11-30

    申请号：US11877562

    申请日：2007-10-23

    Applicant: Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jun-sic Kim ,  Chan-ho Lee ,  Jin-goo Ahn

    Inventor： Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jun-sic Kim ,  Chan-ho Lee ,  Jin-goo Ahn

    IPC: B01J8/02 ,  C01B3/02

    CPC classification number: B01J19/249 ,  B01J23/40 ,  B01J2219/2455 ,  B01J2219/2459 ,  B01J2219/246 ,  B01J2219/2465 ,  B01J2219/2479 ,  B01J2219/2485

    Abstract: Provided is a reaction vessel for a fuel cell, and more particularly to a reaction vessel exhibiting improved thermal efficiency, and a reaction device for a steam reforming reaction for a fuel cell. The reaction device includes a cylindrical reaction catalyst chamber on which a target reaction catalyst for a predetermined target reaction is disposed; and a tubular oxidation catalyst chamber surrounding the reaction catalyst chamber, comprising an oxidation reaction catalyst therein. The reaction device according features an increased contact area between catalyst and gas, and rapidly heating of the gas in contact with the catalyst to a desired reaction temperature.

    Abstract translation: 提供一种用于燃料电池的反应容器，更具体地说，涉及一种表现出改善的热效率的反应容器，以及用于燃料电池的蒸汽重整反应的反应装置。 反应装置包括：圆筒状的反应催化剂室，配置有用于规定的目标反应的目标反应催化剂; 以及围绕反应催化剂室的管状氧化催化剂室，其中包含氧化反应催化剂。 反应装置的特征在于催化剂和气体之间的接触面积增加，并且将与催化剂接触的气体快速加热到所需的反应温度。

    Magnetic random access memory device using current induced switching
    83.
    发明授权
    Magnetic random access memory device using current induced switching 有权
    使用电流感应开关的磁性随机存取存储器件

    公开(公告)号：US07778067B2

    公开(公告)日：2010-08-17

    申请号：US11896214

    申请日：2007-08-30

    Applicant: Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

    Inventor： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

    IPC: G11C11/15

    CPC classification number: G11C11/16

    Abstract: Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

    Abstract translation: 提供了使用电流感应开关（CID）方法的磁存储器件。 使用CID方法的磁存储器件包括下电极，形成在下电极上的磁阻结构，该电阻结构包括两侧宽度变化的自由层和形成在该磁阻结构上的上电极。

    Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices
    85.
    发明申请
    Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices 失效
    磁迹，包括磁迹的信息存储设备，以及操作信息存储设备的方法

    公开(公告)号：US20100149863A1

    公开(公告)日：2010-06-17

    申请号：US12461062

    申请日：2009-07-30

    Applicant: Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

    Inventor： Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

    IPC: G11C11/14

    CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.

    Abstract translation: 磁道包括具有不同长度和不同磁畴壁移动速度的第一和第二磁畴区域。 第一和第二磁畴区域中较长的区域用作信息读/写区域。 信息存储装置包括磁道。 磁道包括多个磁畴区域和形成在相邻磁畴区域之间的磁畴壁区域。 多个磁畴区域包括第一磁畴区域和具有比第一磁畴区域更小的长度的至少一个第二磁畴区域。 信息存储装置还包括被配置为在第一磁畴区域上执行信息记录操作和信息再现操作中的至少一个的第一单元和被配置为移动磁畴的磁畴壁的磁畴壁移动单元 墙区域。

    Magnetic track using magnetic domain wall movement and information storage device including the same
    87.
    发明授权
    Magnetic track using magnetic domain wall movement and information storage device including the same 有权
    磁轨使用磁畴壁运动和信息存储装置包括相同

    公开(公告)号：US07710757B2

    公开(公告)日：2010-05-04

    申请号：US12073103

    申请日：2008-02-29

    Applicant: Kwang-seok Kim ,  Sung-chul Lee ,  Sun-ae Seo

    Inventor： Kwang-seok Kim ,  Sung-chul Lee ,  Sun-ae Seo

    IPC: G11C19/00

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  Y10S977/933

    Abstract: Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacked separate from each other, and a plurality of second magnetic layers for connecting the plurality of first magnetic layers. The information storage device may include the magnetic track having a plurality of magnetic domains, current applying device connected to the magnetic track, and a read/write device on a middle portion of the magnetic track.

    Abstract translation: 提供了使用磁畴壁移动的磁迹和包括该磁迹的信息存储装置。 磁迹可以包括一个之字形存储轨道，该轨道包括彼此平行并彼此分开堆叠的多个第一磁性层，以及用于连接多个第一磁性层的多个第二磁性层。 信息存储装置可以包括具有多个磁畴的磁道，连接到磁道的电流施加装置，以及在磁道的中间部分的读/写装置。

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