公开(公告)号：US06638392B2

公开(公告)日：2003-10-28

申请号：US09730739

申请日：2000-12-07

申请人： Naoko Yamamoto ,  Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Naoko Yamamoto ,  Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H100

CPC分类号： H01J37/32192 ,  H01J37/3244

摘要： A plasma process apparatus includes a dielectric plate to emit plasma inside a chamber, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.

摘要翻译： 等离子体处理装置包括在室内发射等离子体的电介质板和用于支撑电介质板的电介质板支撑构件。 在电介质板支撑构件上设置有用于向反应室内部供应反应气体的多个气体导入孔。 气体导入孔的出口在与基板8的表面相对的一侧开口，并布置在电介质板5外侧的周边区域。接地电位施加到室盖和电介质板支撑构件，偏压为 施加到基底。 因此，可以获得能够使用均匀等离子体均匀地处理大面积的基板的低成本等离子体处理装置。

公开(公告)号：US5714795A

公开(公告)日：1998-02-03

申请号：US554053

申请日：1995-11-06

申请人： Tadahiro Ohmi ,  Hiroshi Suzuki ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Hiroshi Suzuki ,  Masaki Hirayama

IPC分类号： H01L21/285 ,  G11C17/06 ,  H01L21/28 ,  H01L21/82 ,  H01L21/8246 ,  H01L23/525 ,  H01L27/112 ,  H01L29/00 ,  H01L23/48 ,  H01L29/04

CPC分类号： H01L23/5252 ,  H01L27/112 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A semiconductor storage device capable of high-speed writing and reading and having extremely high reliability. The semiconductor device includes a plurality of cells each having a semiconductor layer between a pair of conductors. At least one of the pair of conductors is made of a metal and the semiconductor layer is made of a-Si which forms a silicide region having a width of 150 nm or less by silicide reacting with the metal at a reaction speed of 10 m/sec or higher. Alternatively, at least one of the pair of conductors is made of a metal which silicide reacts with a-Si to form a silicide region having a conical structure with a diameter of 150 nm or less. Otherwise, at least one among the pair of conductors is formed of a metal which forms a silicide region of 150 nm or less by reacting with a-Si. The interface between the semiconductor layer and the conductors is not exposed to an external oxygen containing atmosphere during processing so that no oxygen containing compound exists at this interface.

摘要翻译： 一种能够进行高速写入和读取并具有极高可靠性的半导体存储装置。 半导体器件包括多个单元，每个单元在一对导体之间具有半导体层。 一对导体中的至少一个由金属制成，半导体层由a-Si制成，其通过硅化物与金属反应形成宽度为150nm以下的硅化物区域，反应速度为10m / 秒以上。 或者，一对导体中的至少一个由金属制成，硅化物与a-Si反应形成直径为150nm以下的锥形结构的硅化物区域。 否则，一对导体中的至少一个由与a-Si反应形成150nm以下的硅化物区域的金属形成。 半导体层与导体之间的界面在加工过程中不会暴露于外部含氧气氛，因此在该界面处不存在含氧化合物。

公开(公告)号：US09196460B2

公开(公告)日：2015-11-24

申请号：US12997211

申请日：2009-06-03

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H01J37/32

CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32449

摘要： A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container.

摘要翻译： 主气体通道和多个分支气体通道的气体导通率之间的比率增加。 等离子体处理装置是用于通过激励气体等离子体处理待处理物体的装置，并且包括处理容器; 用于供应所需气体的气体供应源; 分配从气体供给源供给的气体的主气体通路; 多个分支气体通道，连接到主气体通道的下游侧; 多个节流部，形成在所述多个分支气体通路上，以使所述分支气体通道变窄; 和每个分支气体通道中的一个，两个或更多个排气孔，用于将已经通过形成在多个分支气体通道上的多个节气门部分的气体排放到处理容器中。

公开(公告)号：US09095039B2

公开(公告)日：2015-07-28

申请号：US13809990

申请日：2011-07-14

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H01J7/46 ,  H05H1/46 ,  H01J37/32

CPC分类号： H05H1/46 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32532 ,  H01J37/32577

摘要： A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatus 10 includes a vacuum chamber 100 having therein a mounting table 115 configured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguide 225 through which a high frequency power for exciting plasma is supplied into the vacuum chamber 100; a waveguide path 205, connected to the first coaxial waveguide 225, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate.

摘要翻译： 等离子体处理装置可以在大的衬底上激发均匀的等离子体。 等离子体处理装置10包括真空室100，其中具有构造成安装基板G的安装台115和形成在其上产生等离子体的安装台上方的等离子体空间; 第一同轴波导225，其中用于激发等离子体的高频功率被供应到真空室100中; 连接到第一同轴波导225的波导路径205具有朝向等离子体空间的狭缝形开口; 以及调整单元，被配置为调节在所述狭缝状开口的长度方向上在所述波导路径中传播的高频功率的波长。 通过调整在波导路径中传播的高频功率的波长被充分延长，可以在大的衬底上激发均匀的等离子体。

公开(公告)号：US08327796B2

公开(公告)日：2012-12-11

申请号：US12997180

申请日：2009-06-03

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23C16/00

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H01J37/32229

摘要： Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.

摘要翻译： 提供一种具有同轴波导结构的等离子体处理装置，其中输入侧的特性阻抗和输出侧的特性阻抗不同。 微波等离子体处理装置，其通过使用微波对气体进行等离子体处理，包括：处理容器; 输出微波的微波源，从微波源传输微波输出的第一同轴波导; 以及电介质板，其与第一同轴波导相邻，同时面向处理容器的内侧，并且将从第一同轴波导传输的微波发射到处理容器中。 第一同轴波导管的内导体和外导体之间的厚度比在纵向方向上不均匀。

公开(公告)号：US07819082B2

公开(公告)日：2010-10-26

申请号：US12402172

申请日：2009-03-11

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/511 ,  C23C16/50 ,  C23C16/517 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

摘要翻译： 在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。 高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。 优化了微波引入部分的电介质材料分离壁102和电介质材料中的每一个的厚度，以使等离子体激发效率最大化，并且同时，缝隙天线110与电介质材料分离之间的距离 电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

公开(公告)号：US07718484B2

公开(公告)日：2010-05-18

申请号：US11979269

申请日：2007-10-31

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama ,  Yasuyuki Shirai

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama ,  Yasuyuki Shirai

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/2822 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

摘要翻译： 在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于 第一惰性气体等离子体。 此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有 构成气体分子的元素在硅气体的表面上。

公开(公告)号：US20100001744A1

公开(公告)日：2010-01-07

申请号：US12375225

申请日：2007-07-18

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： G01R27/32

CPC分类号： C23C16/511 ,  C23C16/345 ,  C23C16/52 ,  G01R1/24 ,  H01J37/32211 ,  H05H1/46

摘要： [Problem] To precisely measure a standing wave to be an indication for comprehending a guide wavelength λg or the like in a waveguide.[Means for Solving] A distribution of temperatures is detected in a conductive member forming at least a part of pipe walls of a waveguide with respect to a longitudinal direction of a waveguide which propagates an electromagnetic wave, and a standing wave generated in the waveguide is measured based on the temperature distribution. The temperature distribution in the conductive member with respect to the longitudinal direction of the waveguide can be measured precisely with a plurality of temperature sensors disposed along the longitudinal direction of the waveguide, a temperature sensor which moves along the longitudinal direction of the waveguide, or an infrared camera.

摘要翻译： [问题]精确地测量驻波作为在波导管中理解引导波长兰博丹等的指示。 [解决方案]在形成波导管壁的至少一部分的导电构件中，相对于传播电磁波的波导的纵向方向检测温度分布，并且在波导中产生的驻波为 基于温度分布测量。 导电部件相对于波导的长度方向的温度分布可以通过沿着波导的长度方向配置的多个温度传感器，沿着波导的长度方向移动的温度传感器，或 红外摄像机

公开(公告)号：US20090205782A1

公开(公告)日：2009-08-20

申请号：US12402172

申请日：2009-03-11

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： H01L21/3065

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

摘要翻译： 在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。 高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。 优化了微波引入部分的电介质材料分离壁102和电介质材料中的每一个的厚度，以使等离子体激发效率最大化，并且同时，缝隙天线110与电介质材料分离之间的距离 电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

公开(公告)号：US20080277715A1

公开(公告)日：2008-11-13

申请号：US11979269

申请日：2007-10-31

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama ,  Yasuyuki Shirai

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama ,  Yasuyuki Shirai

IPC分类号： H01L29/788 ,  H01L23/58 ,  H01L21/469 ,  H01L21/3205

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/2822 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

摘要翻译： 在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于 第一惰性气体等离子体。 此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成至少含有 构成气体分子的元素在硅气体的表面上。