公开(公告)号：US20080265376A1

公开(公告)日：2008-10-30

申请号：US11629861

申请日：2005-07-06

申请人： Takuya Tsurume ,  Koji Dairiki ,  Naoto Kusumoto

发明人： Takuya Tsurume ,  Koji Dairiki ,  Naoto Kusumoto

IPC分类号： H01L29/06 ,  H01L21/304

CPC分类号： H01L21/67132 ,  B32B37/226 ,  B32B38/0004 ,  B32B2305/342 ,  B32B2457/14 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/786 ,  H01L24/27 ,  H01L24/29 ,  H01L24/97 ,  H01L27/1203 ,  H01L27/1255 ,  H01L27/1266 ,  H01L2221/68313 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/83191 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/19043 ,  H01L2924/00

摘要： It is an object of the present invention to decrease a unit cost of an IC chip and to achieve the mass-production of IC chips. According to the present invention, a substrate having no limitation in size, such as a glass substrate, is used instead of a silicon substrate. This achieves the mass-production and the decrease of the unit cost of the IC chip. Further, a thin IC chip is provided by grinding and polishing the substrate such as the glass substrate.

摘要翻译： 本发明的目的是降低IC芯片的单位成本并实现IC芯片的批量生产。 根据本发明，使用诸如玻璃基板等尺寸没有限制的基板来代替硅基板。 这实现了IC芯片的批量生产和单位成本的降低。 此外，通过研磨和研磨诸如玻璃基板的基板来提供薄的IC芯片。

公开(公告)号：US20080036680A1

公开(公告)日：2008-02-14

申请号：US11665548

申请日：2005-10-18

申请人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

发明人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

IPC分类号： H01Q1/40 ,  H01Q17/00

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/1214 ,  H01L27/13 ,  H01L2224/95001 ,  H01Q1/2225 ,  H01Q7/00 ,  Y10T29/49018

摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

摘要翻译： 本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。 本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。 半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。 元件形成层和天线电连接。 天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。 作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

公开(公告)号：US20070173034A1

公开(公告)日：2007-07-26

申请号：US10591700

申请日：2005-03-15

申请人： Takuya Tsurume ,  Junya Maruyama ,  Yoshitaka Dozen

发明人： Takuya Tsurume ,  Junya Maruyama ,  Yoshitaka Dozen

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214 ,  H05K3/20

摘要： A method for separating an integrated circuit formed by a thin film having a novel structure or a method for transfer-ring the integrated circuit to another substrate, that is, so-called transposing method, has not been proposed. According to the present invention, in the case that an integrated circuit having a thin film having a novel structure formed over a substrate via a release layer is separated, the release layer is removed in the state that the thin film integrated circuit is fixated, the thin film integrated circuit is transposed to a supporting substrate having an adhesion surface, and the thin film integrated circuit is transposed to another substrate having an adhesion surface with higher strength of adhesion than that of the supporting substrate.

摘要翻译： 没有提出用于将由具有新颖结构的薄膜形成的集成电路或将集成电路转移到另一基板的方法分离的方法，即所谓的转置方法。 根据本发明，在通过剥离层在基板上形成具有新颖结构的薄膜的集成电路被分离的情况下，在薄膜集成电路固定的状态下去除剥离层， 薄膜集成电路被转置到具有粘合表面的支撑基板上，并且薄膜集成电路被转置到具有比支撑基板的粘合强度更高的粘附表面的另一基板。

公开(公告)号：US20070032042A1

公开(公告)日：2007-02-08

申请号：US11542216

申请日：2006-10-04

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Takuya Tsurume ,  Hideaki Kuwabara

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/76251 ,  H01L27/1214

摘要： A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more. As a result, complete peeling can be attained in the oxide layer or at an interface thereof by using physical means.

摘要翻译： 提供一种不会对被剥离层造成损害的剥离方法，并且该方法不仅能够剥离具有小面积的被剥离层，而且还可以剥离具有大面积的待剥离的整个层 高产。 此外，提供了一种半导体器件及其制造方法，该半导体器件通过将待剥离的层的粘合而减小重量。 特别地，提供了一种通过将各种元件（通常为TFT）粘附到柔性膜而减小重量的半导体器件及其制造方法。 金属层或氮化物层设置在基板上; 提供与金属层或氮化物层接触的氧化物层; 然后，形成基底绝缘膜和含有氢的被剥离层。 在410℃以上进行用于扩散氢的热处理。 结果，可以通过使用物理手段在氧化物层或其界面处获得完全的剥离。

公开(公告)号：US20070004178A1

公开(公告)日：2007-01-04

申请号：US11454851

申请日：2006-06-19

申请人： Takuya Tsurume ,  Naoto Kusumoto

发明人： Takuya Tsurume ,  Naoto Kusumoto

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/78

摘要： To provide a semiconductor device including a thinned substrate with high yield. After forming a protective layer in a predetermined portion (at least a portion covering a side surface of a substrate) of the substrate, grinding and polishing of the substrate are performed. In other words, an element layer including a plurality of integrated circuits is formed over one surface of the substrate, the protective layer is formed in contact with at least the side surface of the substrate, and the substrate is thinned (for example, the other surface of the substrate is ground and polished), the protective layer is removed, and the polished substrate and the element layer is divided so as to form stack bodies including a layer provided with at least one of the plurality of integrated circuits.

摘要翻译： 以高产率提供包括薄化基板的半导体器件。 在基板的规定部（覆盖基板的侧面的至少一部分）上形成保护层后，进行基板的研磨和研磨。 换句话说，在基板的一个表面上形成包括多个集成电路的元件层，保护层至少形成为与基板的侧表面接触，并且使基板变薄（例如，另一个 将衬底的表面研磨抛光），除去保护层，并且将抛光的衬底和元件层分开以形成包括设置有多个集成电路中的至少一个的层的堆叠体。

公开(公告)号：US20070004102A1

公开(公告)日：2007-01-04

申请号：US11448053

申请日：2006-06-07

申请人： Koji Dairiki ,  Naoto Kusumoto ,  Takuya Tsurume

发明人： Koji Dairiki ,  Naoto Kusumoto ,  Takuya Tsurume

IPC分类号： H01L21/84 ,  H01L21/31

CPC分类号： H01L27/1266 ,  H01L27/1285 ,  H01L27/1292

摘要： An object is to provide a method for manufacturing a semiconductor device which suppresses an influence on a semiconductor element due to entry of an impurity element, moisture, or the like from outside even in the case of thinning or removing a substrate after forming a semiconductor element over the substrate. A feature is to form an insulating film functioning as a protective film on at least one side of the substrate by performing surface treatment on the substrate, to form a semiconductor element such as a thin film transistor over the insulating film, and to thin the substrate. As the surface treatment, addition of an impurity element or plasma treatment is performed on the substrate. As a means for thinning the substrate, the substrate can be partially removed by performing grinding treatment, polishing treatment, or the like on the other side of the substrate.

摘要翻译： 本发明的目的是提供一种用于制造半导体器件的方法，其中，即使在形成半导体元件之后减薄或去除衬底的情况下，也可以抑制由于杂质元素，水分等的进入而对半导体元件的影响 在基板上。 特征在于，在基板的至少一面上形成作为保护膜的绝缘膜，在基板上进行表面处理，在绝缘膜上形成薄膜晶体管等半导体元件，并使基板 。 作为表面处理，在基板上进行杂质元素或等离子体处理的添加。 作为使基板变薄的方法，可以在基板的另一侧进行研磨处理，研磨处理等来部分除去基板。

公开(公告)号：US20070004082A1

公开(公告)日：2007-01-04

申请号：US11454878

申请日：2006-06-19

申请人： Takuya Tsurume ,  Naoto Kusumoto

发明人： Takuya Tsurume ,  Naoto Kusumoto

IPC分类号： H01L21/00

CPC分类号： G06K19/07749

摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, which is flexible and superiority in physical strength. As a method for manufacturing a semiconductor device, an element layer including a plurality of integrated circuits is formed over one surface of a substrate; a hole having curvature is formed in part of one surface side of the substrate; the substrate is thinned (for example, the other surface of the substrate is ground and polished); and the substrate is cut off so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed; whereby a laminated body including an integrated circuit is formed. Further, a thickness of the substrate, which is polished, is 2 μm or more and 50 μm or less.

摘要翻译： 本发明的一个目的是提供一种柔性和优异的物理强度的半导体器件的制造方法。 作为制造半导体器件的方法，在衬底的一个表面上形成包括多个集成电路的元件层; 在基板的一个表面侧的一部分上形成具有曲率的孔; 衬底变薄（例如，衬底的另一表面被研磨和抛光）; 并且基板被切断，使得基板的横截面具有与形成孔的部分相对应的曲率; 从而形成包括集成电路的层叠体。 此外，抛光的基板的厚度为2μm以上且50μm以下。

公开(公告)号：US20060011288A1

公开(公告)日：2006-01-19

申请号：US11168353

申请日：2005-06-29

申请人： Ryosuke Watanabe ,  Hidekazu Takahashi ,  Takuya Tsurume ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Miyuki Higuchi

发明人： Ryosuke Watanabe ,  Hidekazu Takahashi ,  Takuya Tsurume ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Miyuki Higuchi

IPC分类号： B32B37/00 ,  B29C65/00

CPC分类号： H01L21/56 ,  B32B37/153 ,  B32B37/226 ,  B32B2305/342 ,  B32B2519/02 ,  G06K19/07718 ,  G06K19/07749 ,  H01L21/67132 ,  H01L2924/0002 ,  Y10T29/41 ,  Y10T156/1095 ,  Y10T156/1734 ,  H01L2924/00

摘要： The invention provides a laminating system in which one of second and third substrates for sealing a thin film integrated circuit is supplied to a first substrate having the plurality of thin film integrated circuit while being extruded in a heated and melted state, and further rollers are used for supplying the other substrate, receiving IC chips, separating, and sealing. Processes of separating the thin film integrated circuits provided over the first substrate, sealing the separated thin film integrated circuits, and receiving the sealed thin film integrated circuits can be continuously carried out by rotating the rollers. Thus, the production efficiency can be extremely improved.

公开(公告)号：US20050287846A1

公开(公告)日：2005-12-29

申请号：US11151230

申请日：2005-06-14

申请人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

发明人： Yoshitaka Dozen ,  Tomoko Tamura ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/13 ,  H01L27/28 ,  H01L29/786 ,  H01R12/00

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/13 ,  H01L27/28 ,  H01L29/78603 ,  H01L2924/3511

摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.

摘要翻译： 预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。 本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。 本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。 金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。 因此，可以在短时间内更容易地制造IDF芯片。

公开(公告)号：US09559129B2

公开(公告)日：2017-01-31

申请号：US13468354

申请日：2012-05-10

申请人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

发明人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

IPC分类号： H01L27/13 ,  G06K19/077 ,  H01Q1/22 ,  H01Q7/00 ,  H01L27/12

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/1214 ,  H01L27/13 ,  H01L2224/95001 ,  H01Q1/2225 ,  H01Q7/00 ,  Y10T29/49018

摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

摘要翻译： 本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。 本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。 半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。 元件形成层和天线电连接。 天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。 作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。