公开(公告)号：US5559355A

公开(公告)日：1996-09-24

申请号：US492854

申请日：1995-06-20

申请人： Tomoyuki Yamazaki ,  Shigeyuki Obinata ,  Masahito Otsuki ,  Seiji Momota ,  Tatsuhiko Fujihira

发明人： Tomoyuki Yamazaki ,  Shigeyuki Obinata ,  Masahito Otsuki ,  Seiji Momota ,  Tatsuhiko Fujihira

IPC分类号： H01L27/02 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/76

CPC分类号： H01L27/0248 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7802

摘要： Mutual interference is reduced between a main cell portion and a sensing cell portion for detecting the current flowing through the main cell portion of a vertical MOS semiconductor device, and accuracy and reliability of overcurrent detection are improved. In the device, well regions of (p) type are formed between the main and sensing cell portions for capturing the minority carriers. Breakdown of the gate oxide film caused by an open emitter electrode of the sensing cell portion is prevented by forming the (p) type well regions with ring shapes, by spacing the (p) type well regions by 5 to 20 .mu.m, and by adjusting the isolation withstand voltage between the main and sensing cell portions below the withstand voltage of the gate oxide film. A voltage spike is minimized by narrowing the overlap of the detecting and gate electrodes for reduced capacitance between these electrodes.

摘要翻译： 在主单元部分和用于检测流过垂直MOS半导体器件的主单元部分的电流的感测单元部分之间相互干扰减小，并且提高了过电流检测的精度和可靠性。 在该器件中，（p）型的阱区形成在用于俘获少数载流子的主单元部分和感测单元部分之间。 通过将（p）型阱区间隔5〜20μm，通过形成具有环形的（p）型阱区来防止由感测单元部分的开放发射极引起的栅极氧化膜的击穿，并且通过 将主感测单元部分和感测单元部分之间的隔离耐压调节到栅极氧化膜的耐受电压以下。 通过缩小检测电极和栅电极的重叠以减小这些电极之间的电容，使电压尖峰最小化。

公开(公告)号：US5162966A

公开(公告)日：1992-11-10

申请号：US719933

申请日：1991-06-24

申请人： Tatsuhiko Fujihira

发明人： Tatsuhiko Fujihira

IPC分类号： H01L29/78 ,  H01L27/02 ,  H01L27/04

CPC分类号： H01L29/7808 ,  H01L27/0251 ,  H01L27/0255 ,  H03K17/0822 ,  H01L2924/0002 ,  H03K2217/0018

摘要： A MOSFET semiconductor device has a surge protecting element comprising a transistor element having a gate electrode, a source electrode, and a drain electrode. A Zener diode having a cathode electrode and an anode electrode is connected to the drain electrode of the transistor element. A lateral MOSFET element has a gate electrode and a drain electrode connected to the anode electrode of the Zener diode, a source electrode connected to the gate electrode of the transistor element, and a back gate electrode connected to the source electrode of the transistor element.

摘要翻译： MOSFET半导体器件具有浪涌保护元件，其包括具有栅电极，源电极和漏电极的晶体管元件。 具有阴极电极和阳极电极的齐纳二极管连接到晶体管元件的漏电极。 横向MOSFET元件具有连接到齐纳二极管的阳极的栅电极和漏电极，连接到晶体管元件的栅电极的源电极和连接到晶体管元件的源电极的背栅电极。

公开(公告)号：US5162883A

公开(公告)日：1992-11-10

申请号：US757676

申请日：1991-09-10

申请人： Tatsuhiko Fujihira

发明人： Tatsuhiko Fujihira

IPC分类号： H01L29/06 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/0619 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7835 ,  H01L29/0696

摘要： The present invention relates to an increased operating voltage MOS semiconductor device. The device has a channel forming area between a source and extended drain area, a gate insulating film over the channel forming area and the drain area with a thicker portion over the drain area, and a gate electrode over the gate insulating film, thereby preventing an excess field concentration from existing in the extended drain region. The field concentration may be further reduced by forming a relaxation area underneath the juncture between the thick and thin portions of the gate insulating film below the surface of the drain area.

摘要翻译： 本发明涉及增加的工作电压MOS半导体器件。 该器件在源极和延伸漏极区域之间具有沟道形成区域，在沟道形成区域上方的栅极绝缘膜和在漏极区域上具有较厚部分的漏极区域以及栅极绝缘膜上方的栅电极，从而防止 存在于延伸漏极区域的过量场浓度。 通过在漏极区域的表面下方的栅极绝缘膜的厚部和薄部之间的接合部之间形成松弛区域，可以进一步减小场浓度。

公开(公告)号：US5097302A

公开(公告)日：1992-03-17

申请号：US672381

申请日：1991-03-20

申请人： Tatsuhiko Fujihira ,  Takeyoshi Nishimura

发明人： Tatsuhiko Fujihira ,  Takeyoshi Nishimura

IPC分类号： H01L27/02 ,  H01L27/04 ,  H01L29/78

CPC分类号： H01L29/7815 ,  H01L27/0248 ,  H01L2924/0002

摘要： In a power MOS-type semiconductor device with a current detection terminal, a first number of main MOSFET elements are connected to one another in parallel, and a second number of detection MOSFET elements are similarly connected to one another. First and second terminals of the main and detection MOSFET elements are commonly connected. A third terminal of one of the detection MOSFET element is used as the current detection terminal. The current or voltage measured at this detection terminal is substantially proportional to the ratio of the first number to the second number. To this end, the parasitic resistance in the device is increased so as to inhibit a leak current from flowing therethrough. Moreover, the ON resistance of each of the detection MOSFET elements is designed to be lower than that of a main MOSFET element by an amount which is a function of the first number and the detection resistance connected to the current detection terminal.

摘要翻译： 在具有电流检测端子的功率MOS型半导体器件中，第一数量的主MOSFET元件彼此并联连接，并且第二数量的检测MOSFET元件彼此类似地连接。 主要和检测MOSFET元件的第一和第二端子通常连接。 检测MOSFET元件之一的第三端用作电流检测端子。 在该检测端子处测量的电流或电压基本上与第一数量与第二数量的比率成比例。 为此，器件中的寄生电阻增加，以防止漏电流流过。 此外，每个检测MOSFET元件的导通电阻被设计为低于主MOSFET元件的导通电阻，其量是连接到电流检测端子的第一数量和检测电阻的函数。

公开(公告)号：US5077590A

公开(公告)日：1991-12-31

申请号：US551399

申请日：1990-07-12

申请人： Tatsuhiko Fujihira

发明人： Tatsuhiko Fujihira

IPC分类号： H01L29/866

CPC分类号： H01L29/866

摘要： The present invention relates to high voltage semiconductor devices with an integrated Zener diode used as a protective element against overvoltage. The Zener breakdown voltage can be increased while providing high operating voltage to the whole semiconductor device, by forming a region of lower impurity concentration around the cathode of the Zener diode. This lowers the current amplification factor of a parasitic transistor, enabling an increase in the Zener breakdown voltage without decreasing the withstand voltage of the whole semiconductor device.

摘要翻译： 本发明涉及具有集成齐纳二极管作为防过电压保护元件的高压半导体器件。 通过在齐纳二极管的阴极周围形成杂质浓度较低的区域，可以提高齐纳击穿电压，同时为整个半导体器件提供高工作电压。 这降低了寄生晶体管的电流放大系数，从而能够提高齐纳击穿电压，而不降低整个半导体器件的耐受电压。

公开(公告)号：US07253476B2

公开(公告)日：2007-08-07

申请号：US11035819

申请日：2005-01-14

申请人： Tatsuhiko Fujihira

发明人： Tatsuhiko Fujihira

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on resistance while maintaining a high breakdown voltage. The semiconductor device includes a semiconductive substrate region, through which a current flows in the ON-state of the device and that is depleted in the OFF-state. The semiconductive substrate region includes a plurality of vertical alignments of n-type buried regions 32 and a plurality of vertical alignments of p-type buried regions. The vertically aligned n-type buried regions and the vertically aligned p-type buried regions are alternately arranged horizontally. The n-type buried regions and p-type buried regions are formed by diffusing respective impurities into highly resistive n-type layers 32a laminated one by one epitaxially.

摘要翻译： 具有交变导电型层的半导体器件改善了导通电阻和击穿电压之间的折衷，并且通过在保持高击穿电压的同时降低导通电阻来增加电流容量。 半导体器件包括半导体衬底区域，电流在器件的导通状态中流过该半导体衬底区域，并且在OFF状态下耗尽。 半导体衬底区域包括n型埋入区32的多个垂直对准和p型埋入区的多个垂直对准。 垂直取向的n型掩埋区域和垂直排列的p型掩埋区域水平地交替排列。 通过将各种杂质扩散到外延层叠的高电阻性n型层32a中，形成n型掩埋区域和p型掩埋区域。

公开(公告)号：US20060244006A1

公开(公告)日：2006-11-02

申请号：US11473886

申请日：2006-06-23

申请人： Tatsuhiko Fujihira ,  Yasushi Miyasaka

发明人： Tatsuhiko Fujihira ,  Yasushi Miyasaka

IPC分类号： H01L29/74

CPC分类号： H01L29/66136 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  Y10S257/928

摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

公开(公告)号：US06977425B2

公开(公告)日：2005-12-20

申请号：US10442648

申请日：2003-05-21

申请人： Kazuhiko Yoshida ,  Takeshi Ichimura ,  Tatsuhiko Fujihira ,  Naoki Kumagai

发明人： Kazuhiko Yoshida ,  Takeshi Ichimura ,  Tatsuhiko Fujihira ,  Naoki Kumagai

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8234 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/02 ,  H01L27/06 ,  H01L29/78 ,  H01L29/00

CPC分类号： H01L29/7816 ,  H01L27/0251 ,  H01L29/7817 ,  H01L29/7821 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.

摘要翻译： 半导体器件在集成智能开关器件，双积分型信号输入和转换IC以及组合电源IC中使用的横向MOSFET的窄芯片区域内实现了高静电放电耐受能力和高耐冲击能力。 半导体器件包括其中基极电连接到发射极和集电极的垂直双极晶体管，以及包括连接到表面电极的漏电极的横向MOSFET。 当施加高静电放电电压或高浪涌电压时，垂直双极晶体管吸收静电放电或浪涌能量，并将静电放电电压或浪涌电压限制为低于横向MOSFET的击穿电压。

公开(公告)号：US06975013B2

公开(公告)日：2005-12-13

申请号：US10262699

申请日：2002-10-02

申请人： Tatsuhiko Fujihira ,  Yasushi Miyasaka

发明人： Tatsuhiko Fujihira ,  Yasushi Miyasaka

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/47 ,  H01L29/861 ,  H01L27/095 ,  H01L29/812 ,  H01L31/07

CPC分类号： H01L29/66136 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  Y10S257/928

摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least 1/100 of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为漂移层电阻率的1/100，阳极区域的厚度小于环形区域的扩散深度。

公开(公告)号：US20050151219A1

公开(公告)日：2005-07-14

申请号：US11072868

申请日：2005-03-04

申请人： Tatsuhiko Fujihira ,  Yasushi Miyasaka

发明人： Tatsuhiko Fujihira ,  Yasushi Miyasaka

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/47 ,  H01L29/861 ,  H01L27/095 ,  H01L21/00

CPC分类号： H01L29/66136 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/8611 ,  H01L29/872 ,  Y10S257/928

摘要： A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer, second-conductivity-type anode region formed in the drift layer located inside the ring region, a cathode electrode formed in contact with the cathode layer, and an anode electrode formed in contact with the anode region, wherein the lowest resistivity of the second-conductivity-type anode region is at least {fraction (1/100)} of the resistivity of the drift layer, and the thickness of the anode region is smaller than the diffusion depth of the ring region.

摘要翻译： 提供一种二极管，其包括第一导电型阴极层，放置在阴极区上并具有比阴极层低的浓度的第一导电型漂移层，大致呈环状的第二导电型环状区域 形成在漂移层中的第二导电型阳极区域，形成在位于环形区域内部的漂移层中的第二导电型阳极区域，与阴极层接触形成的阴极电极以及与该阳极区域接触形成的阳极电极，其中最低 第二导电型阳极区域的电阻率至少为{分数（漂移层的电阻率的1/100，阳极区域的厚度小于环形区域的扩散深度）。