Solid state imaging device
    81.
    发明授权
    Solid state imaging device 失效
    固态成像装置

    公开(公告)号:US4618874A

    公开(公告)日:1986-10-21

    申请号:US647899

    申请日:1984-09-06

    申请人: Tetsuo Yamada

    发明人: Tetsuo Yamada

    摘要: There is disclosed a solid state imaging device comprising P.sup.+ regions formed in photo-electro converting element regions and the separating region defined therebetween, respectively, the P.sup.+ regions being continuous to each other and defining no step portion therebetween. There is also disclosed a method of manufacturing the imaging device, the method comprising a step of forming P.sup.+ regions in photo-electro converting element regions and the separating region defined therebetween, respectively.

    摘要翻译: 公开了一种固态成像装置,包括在光电转换元件区域中形成的P +区域和分别定义在其间的分离区域,P +区域彼此连续并且不在其间限定台阶部分。 还公开了一种制造该成像装置的方法,所述方法包括分别在光电转换元件区域中形成P +区域和在其间限定的分离区域的步骤。

    Solid state imaging apparatus and driving method of the solid state imaging apparatus using four pixel addition
    83.
    发明授权
    Solid state imaging apparatus and driving method of the solid state imaging apparatus using four pixel addition 失效
    固态成像装置和使用四像素加法的固态成像装置的驱动方法

    公开(公告)号:US07697048B2

    公开(公告)日:2010-04-13

    申请号:US11394108

    申请日:2006-03-31

    申请人: Tetsuo Yamada

    发明人: Tetsuo Yamada

    IPC分类号: H04N5/335

    CPC分类号: H04N5/335 H04N5/347 H04N5/372

    摘要: A solid state imaging apparatus of which spatial phases of pixels forming a first matrix of adjoining rows and adjoining columns are relatively different from each other is characterized by that an intersection of a line between two pixels to be added in a row direction and a line between two pixels to be added in a column direction approximately agreed with a center of four pixels to be added when the four pixels adjoining in the row and column directions are added, and phases of said centers of four pixels adjoining in the row direction or column direction are relatively different from each other in a second matrix consisted of a plurality of said centers of four pixels.

    摘要翻译: 形成邻接行和邻接列的第一矩阵的像素的空间相位彼此相对不同的固态成像装置的特征在于,要在行方向上被添加的两个像素之间的直线和 当在行和列方向相邻的四个像素相加时,要添加的两个像素将被添加到与四个像素的中心大致一致的列方向上,并且在行方向或列方向上毗邻的四个像素的中心的相位 在由多个所述四个像素的中心组成的第二矩阵中彼此相对不同。

    Method of manufacturing piezoelectric thin film device and piezoelectric thin film device
    85.
    发明申请
    Method of manufacturing piezoelectric thin film device and piezoelectric thin film device 有权
    制造压电薄膜器件和压电薄膜器件的方法

    公开(公告)号:US20060033595A1

    公开(公告)日:2006-02-16

    申请号:US10538137

    申请日:2004-12-17

    IPC分类号: H03H9/54

    摘要: Method of producing a piezoelectric thin film device comprises a step of forming an insulating layer (12) capable of being etched by a specific chemical substance on the upper surface of a substrate (11); a step of forming a sacrificial layer (13) made of a substance having a higher etching rate by the specific chemical substance than the insulating layer on a partial region of the insulating layer; a step of forming a lower electrode (15) on a region including the sacrificial layer; a step of forming the piezoelectric thin film (16) on a region including a part of the lower electrode; a step of forming an upper electrode (17) on a region including a part of the piezoelectric thin film; a step of forming via hole (18), which penetrates the piezoelectric thin film and lower electrode, so as to expose a part of the sacrificial layer; and a step of forming a space (20) for oscillation by etching both the sacrificial layer and the insulating layer with the same specific chemical substance by introducing the specific chemical substance through the via hole.

    摘要翻译: 制造压电薄膜器件的方法包括在衬底(11)的上表面上形成能够被特定化学物质蚀刻的绝缘层(12)的步骤; 在所述绝缘层的部分区域上形成由具有比所述绝缘层更高的蚀刻速率的物质制成的牺牲层(13)的步骤; 在包括所述牺牲层的区域上形成下电极(15)的步骤; 在包括下电极的一部分的区域上形成压电薄膜(16)的步骤; 在包括压电薄膜的一部分的区域上形成上电极(17)的步骤; 形成穿过压电薄膜和下电极的通孔(18)的步骤,以暴露牺牲层的一部分; 以及通过使特定的化学物质通过通孔,通过用相同的特定化学物质蚀刻牺牲层和绝缘层来形成用于振荡的空间(20)的步骤。

    Image forming method
    86.
    发明申请
    Image forming method 有权
    图像形成方法

    公开(公告)号:US20050142478A1

    公开(公告)日:2005-06-30

    申请号:US10940926

    申请日:2004-09-15

    IPC分类号: G03G9/08 G03G15/20

    CPC分类号: G03G15/2064 G03G2215/208

    摘要: A method for forming an image contains steps of: transferring a toner having a volume average particle diameter of 5 μm or less to a recording medium as a toner image having a monochromatic maximum toner mass per area of 0.35 mg/cm2 or less; and fixing the toner image at a surface temperature of a fixing roll which is 130° C. or less. The toner preferably has 0.02 log(Pa)/° C. or less of a gradient of a storage, elasticity per temperature in a temperature range of from Tm+20° C. to Tm+50° C. Here, Tm represents a melting temperature of a crystalline resin contained in the crystalline toner.

    摘要翻译: 形成图像的方法包括以下步骤:将具有5μm或更小的体积平均粒径的调色剂转印到记录介质上,作为每单位面积的单色最大调色剂质量为0.35mg / cm 2的调色剂图像, / SUP>以下; 并将调色剂图像定影在130℃或更低的定影辊的表面温度。 调色剂优选在Tm + 20℃至Tm + 50℃的温度范围内具有0.02log(℃)/℃或更低的存储梯度,每温度的弹性。这里,Tm表示熔融 包含在结晶调色剂中的结晶树脂的温度。

    Humidity sensor
    88.
    发明授权
    Humidity sensor 失效
    湿度传感器

    公开(公告)号:US06883371B2

    公开(公告)日:2005-04-26

    申请号:US09971711

    申请日:2001-10-09

    IPC分类号: G01N27/04 G01N27/12 G01N7/00

    CPC分类号: G01N27/121

    摘要: A humidity sensor including an insulating substrate, and a lower electrode formed from a noble metal, a moisture sensitive layer formed of a porous body predominantly containing alumina and containing predetermined amounts of TiO2 and SnO2 and an upper electrode formed of a noble metal porous body successively formed on the insulating substrate. The upper electrode is connected to the moisture sensitive layer and a portion of the insulating substrate. Preferably, the lower electrode is formed of a porous body. More preferably, the lower and upper electrodes are formed from Pt. Furthermore, preferably, a heater and a temperature measurement resistor are provided in the insulating substrate and are located directly below the moisture sensitive layer.

    摘要翻译: 一种湿度传感器,包括绝缘基板和由贵金属形成的下电极,由主要含有氧化铝并含有预定量的TiO 2和SnO 2的多孔体形成的湿度敏感层 和由绝缘基板上依次形成的贵金属多孔体形成的上电极。 上电极连接到湿敏层和绝缘基板的一部分。 优选地,下电极由多孔体形成。 更优选地,下电极和上电极由Pt形成。 此外,优选地,在绝缘基板中设置加热器和温度测量电阻器,并且位于湿敏层的正下方。

    Structure of solid state image pickup device
    89.
    发明授权
    Structure of solid state image pickup device 失效
    固态摄像装置的结构

    公开(公告)号:US06690421B1

    公开(公告)日:2004-02-10

    申请号:US08960058

    申请日:1997-10-29

    IPC分类号: H04N314

    摘要: A solid state image pickup device in which a plurality of photoelectric conversion element pairs are disposed in a row direction and a column direction, each pair constituting one unit including two adjacent photoelectric conversion elements disposed in the column direction, wherein a pitch of pairs in the row direction is generally equal to a pitch of pairs in the column direction.

    摘要翻译: 一种固体摄像装置,其中多个光电转换元件对在行方向和列方向上配置,每对构成包括在列方向上设置的两个相邻的光电转换元件的一个单元,其中, 行方向通常等于列方向上的对间距。

    Solid state image pickup device
    90.
    发明授权
    Solid state image pickup device 失效
    固态图像拾取装置

    公开(公告)号:US06236434B1

    公开(公告)日:2001-05-22

    申请号:US08960056

    申请日:1997-10-29

    申请人: Tetsuo Yamada

    发明人: Tetsuo Yamada

    IPC分类号: H04N5335

    摘要: Photosensor rows are disposed in such a manner that one photosensor row is shifted by a half of a layout pitch of photosensors, relative to another adjacent photosensor row. Column direction charge transfer devices are disposed in such a manner that two column direction charge transfer devices are disposed between adjacent two photosensors in the row direction and one column direction charge transfer device is disposed between obliquely adjacent two photosensors.

    摘要翻译: 光电传感器行被布置成使得一个光电传感器行相对于另一个相邻的光电传感器行偏移了光电传感器的布局间距的一半。 列方向电荷转移装置以两行列方向电荷转移装置布置在行方向上相邻的两个光电传感器之间并且一个列方向电荷转移装置设置在倾斜相邻的两个光电传感器之间的方式。