公开(公告)号：US20120292671A1

公开(公告)日：2012-11-22

申请号：US13108363

申请日：2011-05-16

申请人： Peter Baars ,  Sven Beyer ,  Jan Hoentschel ,  Thilo Scheiper

发明人： Peter Baars ,  Sven Beyer ,  Jan Hoentschel ,  Thilo Scheiper

IPC分类号： H01L21/3213 ,  H01L29/78

CPC分类号： H01L29/66772 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/78618 ,  H01L29/78687

摘要： Disclosed herein is a method of forming a semiconductor device. In one example, the method comprises forming a gate electrode structure above a semiconducting substrate and forming a plurality of spacers proximate the gate electrode structures, wherein the plurality of spacers comprises a first silicon nitride spacer positioned adjacent a sidewall of the gate electrode structure, a generally L-shaped silicon nitride spacer positioned adjacent the first silicon nitride spacer, and a silicon dioxide spacer positioned adjacent the generally L-shaped silicon nitride spacer.

摘要翻译： 本文公开了形成半导体器件的方法。 在一个示例中，该方法包括在半导体衬底之上形成栅电极结构并在栅电极结构附近形成多个间隔区，其中多个间隔物包括邻近栅电极结构的侧壁定位的第一氮化硅间隔区， 位于第一氮化硅间隔物附近的通常为L形的氮化硅间隔物，和位于大致L形的氮化硅间隔物附近的二氧化硅隔离物。

公开(公告)号：US08283232B2

公开(公告)日：2012-10-09

申请号：US12785849

申请日：2010-05-24

申请人： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

发明人： Sven Beyer ,  Berthold Reimer ,  Falk Graetsch

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/28079 ,  H01L29/513 ,  H01L29/66583 ,  H01L29/7833

摘要： A gate electrode structure may be formed on the basis of a silicon nitride cap material in combination with a very thin yet uniform silicon oxide based etch stop material, which may be formed on the basis of a chemically driven oxidation process. Due to the reduced thickness, a pronounced material erosion, for instance, during a wet chemical cleaning process after gate patterning, may be avoided, thereby not unduly affecting the further processing, for instance with respect to forming an embedded strain-inducing semiconductor alloy, while nevertheless providing the desired etch stop capabilities during removing the silicon nitride cap material.

摘要翻译： 栅极电极结构可以基于氮化硅帽材料与非常薄且均匀的基于氧化硅的蚀刻停止材料组合形成，其可以基于化学驱动的氧化工艺形成。 由于厚度减小，可以避免例如在门图案化之后的湿化学清洁过程期间显着的材料侵蚀，从而不会过度影响进一步的加工，例如关于形成嵌入式应变诱导半导体合金， 同时在去除氮化硅帽材料期间提供期望的蚀刻停止能力。

公开(公告)号：US20120156865A1

公开(公告)日：2012-06-21

申请号：US13189997

申请日：2011-07-25

申请人： Hans-Juergen Thees ,  Sven Beyer ,  Martin Mazur ,  Steffen Laufer

发明人： Hans-Juergen Thees ,  Sven Beyer ,  Martin Mazur ,  Steffen Laufer

IPC分类号： H01L21/28

CPC分类号： H01L21/28123 ,  H01L21/265 ,  H01L21/28035 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/4916

摘要： When forming sophisticated semiconductor-based gate electrode structures of transistors, the pre-doping of one type of gate electrode structure may be accomplished after the actual patterning of the electrode material by using an appropriate mask or fill material for covering the active regions and using a lithography mask. In this manner, a high degree of flexibility is provided with respect to selecting an appropriate patterning regime, while at the same time a uniform and superior cross-sectional shape for any type of gate electrode structure is obtained.

摘要翻译： 当形成晶体管的复杂的基于半导体的栅极电极结构时，一种类型的栅极电极结构的预掺杂可以在通过使用适当的掩模或填充材料覆盖活性区域并使用 光刻面具 以这种方式，在选择适当的图案化状态方面提供了高度的柔性，同时获得了任何类型的栅电极结构的均匀和优异的横截面形状。

公开(公告)号：US08198192B2

公开(公告)日：2012-06-12

申请号：US12775555

申请日：2010-05-07

申请人： Richard Carter ,  Martin Trentzsch ,  Sven Beyer ,  Rohit Pal

发明人： Richard Carter ,  Martin Trentzsch ,  Sven Beyer ,  Rohit Pal

IPC分类号： H01L21/4763

CPC分类号： H01L21/823462 ,  H01L21/28176 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

摘要： Sophisticated gate electrode structures may be formed by providing a cap layer including a desired species that may diffuse into the gate dielectric material prior to performing a treatment for stabilizing the sensitive gate dielectric material. In this manner, complex high-k metal gate electrode structures may be formed on the basis of reduced temperatures and doses for a threshold adjusting species compared to conventional strategies. Moreover, a single metal-containing electrode material may be deposited for both types of transistors.

摘要翻译： 复杂的栅极电极结构可以通过在进行用于稳定敏感栅极介电材料的处理之前提供包括可能扩散到栅极电介质材料中的所需物质的覆盖层来形成。 以这种方式，与常规策略相比，可以基于用于阈值调节物质的降低的温度和剂量来形成复杂的高k金属栅电极结构。 此外，可以为两种类型的晶体管沉积单个含金属的电极材料。

公开(公告)号：US20110210398A1

公开(公告)日：2011-09-01

申请号：US12917700

申请日：2010-11-02

申请人： Sven Beyer ,  Jan Hoentschel ,  Thilo Scheiper ,  Uwe Griebenow

发明人： Sven Beyer ,  Jan Hoentschel ,  Thilo Scheiper ,  Uwe Griebenow

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/28123 ,  H01L21/823828 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/7833

摘要： In sophisticated semiconductor devices, a replacement gate approach may be applied, in which a channel semiconductor material may be provided through the gate opening prior to forming the gate dielectric material and the electrode metal. In this manner, specific channel materials may be provided in a late manufacturing stage for different transistor types, thereby providing superior transistor performance and superior flexibility in adjusting the electronic characteristics of the transistors.

摘要翻译： 在复杂的半导体器件中，可以应用替代栅极方法，其中可以在形成栅极电介质材料和电极金属之前通过栅极开口提供沟道半导体材料。 以这种方式，可以在后期制造阶段为不同的晶体管类型提供特定的沟道材料，从而在调整晶体管的电子特性方面提供优异的晶体管性能和优异的灵活性。

公开(公告)号：US20110210389A1

公开(公告)日：2011-09-01

申请号：US13006048

申请日：2011-01-13

申请人： Uwe Griebenow ,  Jan Hoentschel ,  Thilo Scheiper ,  Sven Beyer

发明人： Uwe Griebenow ,  Jan Hoentschel ,  Thilo Scheiper ,  Sven Beyer

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66545 ,  H01L29/1037 ,  H01L29/1045 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66621 ,  H01L29/7834 ,  H01L29/7845

摘要： A buried gate electrode structures may be formed in the active regions of sophisticated transistors by providing a recess in the active region and incorporating appropriate gate materials, such as a high-k dielectric material and a metal-containing electrode material. Due to the recessed configuration, the channel length and thus the channel controllability may be increased, without increasing the overall lateral dimensions of the transistor structure.

摘要翻译： 可以通过在有源区中提供凹槽并且合并适当的栅极材料，例如高k电介质材料和含金属的电极材料，在复杂晶体管的有源区中形成掩埋栅极电极结构。 由于凹陷结构，可以增加沟道长度，从而增加沟道可控性，而不增加晶体管结构的整体横向尺寸。

公开(公告)号：US20110210380A1

公开(公告)日：2011-09-01

申请号：US12917763

申请日：2010-11-02

申请人： Thilo Scheiper ,  Sven Beyer ,  Uwe Griebenow ,  Jan Hoentschel ,  Andy Wei

发明人： Thilo Scheiper ,  Sven Beyer ,  Uwe Griebenow ,  Jan Hoentschel ,  Andy Wei

IPC分类号： H01L29/772 ,  H01L21/60

CPC分类号： H01L21/823425 ,  H01L21/76897 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823475 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In sophisticated semiconductor devices, the contact structure may be formed on the basis of contact bars formed in a lower portion of an interlayer dielectric material, which may then be contacted by contact elements having reduced lateral dimensions so as to preserve a desired low overall fringing capacitance. The concept of contact bars of reduced height level may be efficiently combined with sophisticated replacement gate approaches.

摘要翻译： 在复杂的半导体器件中，接触结构可以基于形成在层间电介质材料的下部中的接触棒形成，然后可以将具有减小的横向尺寸的接触元件接触，以便保持期望的低总体边缘电容 。 降低高度水平的接触杆的概念可以与复杂的替代门方法有效结合。

公开(公告)号：US20110127618A1

公开(公告)日：2011-06-02

申请号：US12905383

申请日：2010-10-15

申请人： Thilo Scheiper ,  Sven Beyer ,  Andy Wei ,  Jan Hoentschel

发明人： Thilo Scheiper ,  Sven Beyer ,  Andy Wei ,  Jan Hoentschel

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66651

摘要： In a P-channel transistor comprising a high-k metal gate electrode structure, a superior dopant profile may be obtained, at least in the threshold adjusting semiconductor material, such as a silicon/germanium material, by incorporating a diffusion blocking species, such as fluorine, prior to forming the threshold adjusting semiconductor material. Consequently, the drain and source extension regions may be provided with a high dopant concentration as required for obtaining the target Miller capacitance without inducing undue dopant diffusion below the threshold adjusting semiconductor material, which may otherwise result in increased leakage currents and increased risk of punch through events.

摘要翻译： 在包含高k金属栅电极结构的P沟道晶体管中，至少在阈值调节半导体材料（例如硅/锗材料）中可以通过掺入扩散阻挡物质获得优异的掺杂剂分布，例如 在形成阈值调节半导体材料之前。 因此，漏极和源极延伸区域可以被提供有高的掺杂剂浓度，以获得目标米勒电容，而不会导致低于阈值调节半导体材料的不适当的掺杂剂扩散，否则可能导致增加的漏电流和增加的穿孔风险 事件

公开(公告)号：US20110127617A1

公开(公告)日：2011-06-02

申请号：US12899676

申请日：2010-10-07

申请人： Thilo Scheiper ,  Sven Beyer ,  Jan Hoentschel ,  Uwe Griebenow

发明人： Thilo Scheiper ,  Sven Beyer ,  Jan Hoentschel ,  Uwe Griebenow

IPC分类号： H01L29/772 ,  H01L21/336 ,  H01L21/8238

CPC分类号： H01L21/823864 ,  H01L21/26586 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/7848

摘要： In sophisticated transistor elements, integrity of sensitive gate materials may be enhanced while, at the same time, the lateral offset of extension regions may be reduced. To this end, at least a portion of the extension regions may be implanted at an early manufacturing stage, i.e., in the presence of a protective liner material, which may, after forming the extension regions, be patterned into a protective spacer structure used for preserving integrity of the sensitive gate electrode structure.

摘要翻译： 在复杂的晶体管元件中，可以增强敏感栅极材料的完整性，同时可以减小延伸区域的横向偏移。 为此，至少一部分延伸区域可以在早期制造阶段，即在存在保护性衬垫材料的情况下被植入，其可以在形成延伸区域之后被图案化成用于 保护敏感栅电极结构的完整性。

公开(公告)号：US20110104863A1

公开(公告)日：2011-05-05

申请号：US12894579

申请日：2010-09-30

申请人： Sven Beyer ,  Thilo Scheiper ,  Jan Hoentschel ,  Markus Lenski

发明人： Sven Beyer ,  Thilo Scheiper ,  Jan Hoentschel ,  Markus Lenski

IPC分类号： H01L21/336

CPC分类号： H01L21/28238 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/51 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

摘要： When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

摘要翻译： 当在早期制造阶段形成复杂的高k金属栅电极结构时，可以基于碳间隔元件有效地去除栅电极结构的电介质盖层，这可以保持氮化硅间隔结构的完整性 。 此后，可以基本上除去牺牲碳隔离物而不影响其它器件区域，例如隔离结构，有源区等，这可能有助于在半导体器件的进一步处理期间优良的工艺条件。