利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

115 条记录 (耗时 0.021 秒)

    Non-volatile semiconductor memory device
    81.
    发明授权
    Non-volatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US06586805B2

    公开(公告)日：2003-07-01

    申请号：US10138849

    申请日：2002-05-03

    申请人： Toshitake Yaegashi ,  Kazuhiro Shimizu ,  Seiichi Aritome

    发明人： Toshitake Yaegashi ,  Kazuhiro Shimizu ,  Seiichi Aritome

    IPC分类号： H01L29792

    CPC分类号： H01L29/788 ,  G11C16/0416 ,  G11C16/0433 ,  G11C16/0483 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11546 ,  Y10S257/908

    摘要： In a non-volatile semiconductor memory device and a method for manufacturing the device, each memory cell and its select Tr have the same gate insulating film as a Vcc Tr. Further, the gate electrodes of a Vpp Tr and Vcc Tr are realized by the use of a first polysilicon layer. A material such as salicide or a metal, which differs from second polysilicon (which forms a control gate layer), may be provided on the first polysilicon layer. With the above features, a non-volatile semiconductor memory device can be manufactured by reduced steps and be operated at high speed in a reliable manner.

    摘要翻译： 在非易失性半导体存储器件及其制造方法中，每个存储单元及其选择Tr具有与Vcc Tr相同的栅极绝缘膜。 此外，Vpp Tr和Vcc Tr的栅极通过使用第一多晶硅层来实现。 可以在第一多晶硅层上提供与第二多晶硅（形成控制栅极层）不同的诸如硅化物或金属的材料。 利用上述特征，可以通过减小的步骤制造非易失性半导体存储器件并以可靠的方式高速运行。

    Nonvolatile semiconductor memory device and manufacturing method thereof
    84.
    发明授权
    Nonvolatile semiconductor memory device and manufacturing method thereof 有权
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08735966B2

    公开(公告)日：2014-05-27

    申请号：US13275014

    申请日：2011-10-17

    申请人： Toshitake Yaegashi

    发明人： Toshitake Yaegashi

    IPC分类号： H01L29/792

    CPC分类号： H01L27/1157 ,  H01L27/11565 ,  H01L27/11568 ,  H01L29/1041 ,  H01L29/105 ,  H01L29/513 ,  H01L29/78

    摘要： First and second memory cells have first and second channels, first and second tunnel insulating films, first and second charge storage layers formed of an insulating film, first and second block insulating films, and first and second gate electrodes. A first select transistor has a third channel, a first gate insulating film, and a first gate electrode. The first channel includes a first-conductivity-type region and a second-conductivity-type region which is formed on at least a part of the first-conductivity-type region and whose conductivity type is opposite to the first conductivity type. The third channel includes the first-conductivity-type region and the second-conductivity-type region formed on the first-conductivity-type region. The number of data stored in the first memory cell is smaller than that of data stored in the second memory cell.

    摘要翻译： 第一和第二存储单元具有第一和第二通道，第一和第二隧道绝缘膜，由绝缘膜，第一和第二块绝缘膜以及第一和第二栅电极形成的第一和第二电荷存储层。 第一选择晶体管具有第三沟道，第一栅极绝缘膜和第一栅极电极。 第一通道包括形成在第一导电型区域的至少一部分上并且其导电类型与第一导电类型相反的第一导电型区域和第二导电型区域。 第三通道包括形成在第一导电型区域上的第一导电型区域和第二导电型区域。 存储在第一存储器单元中的数据的数量小于存储在第二存储器单元中的数据的数量。

    Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodes
    85.
    发明授权
    Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodes 有权
    包括形成为具有双层栅电极的存储单元的非易失性半导体存储器件

    公开(公告)号：US08648405B2

    公开(公告)日：2014-02-11

    申请号：US13644641

    申请日：2012-10-04

    申请人： Toshitake Yaegashi

    发明人： Toshitake Yaegashi

    IPC分类号： H01L27/00

    CPC分类号： H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42336

    摘要： A nonvolatile semiconductor memory device includes a plurality of floating gate electrodes respectively formed above a semiconductor substrate with first insulating films disposed therebetween, and a control gate electrode formed above the plurality of floating gate electrodes with a second insulating film disposed therebetween. In each of the plurality of floating gate electrodes is formed to have a width of an upper portion thereof in a channel width direction which is smaller than a width of a lower portion thereof in the channel width direction and one of contact surfaces thereof on at least opposed sides which contact the second insulating film is formed to have one surface, and the second insulating film has a maximum film thickness in a vertical direction, the maximum film thickness being set smaller than a distance from a lowest surface to a highest surface of the second insulating film in the vertical direction.

    摘要翻译： 非易失性半导体存储器件包括分别形成在其上设置有第一绝缘膜的半导体衬底之上的多个浮栅，以及形成在多个浮置栅电极之上的控制栅电极，其间设置有第二绝缘膜。 在多个浮栅电极中的每一个形成为具有在沟道宽度方向上的其上部的宽度，该沟道宽度方向上的沟道宽度方向上的宽度小于沟道宽度方向的下部的宽度，并且其至少一个接触表面 与第二绝缘膜接触的相对侧形成为具有一个表面，并且第二绝缘膜在垂直方向上具有最大膜厚度，最大膜厚被设定为小于从最低表面到最高表面的距离 第二绝缘膜在垂直方向上。

    Nonvolatile semiconductor memory and manufacturing method thereof
    89.
    发明授权
    Nonvolatile semiconductor memory and manufacturing method thereof 有权
    非易失性半导体存储器及其制造方法

    公开(公告)号：US08211767B2

    公开(公告)日：2012-07-03

    申请号：US13047015

    申请日：2011-03-14

    申请人： Toshitake Yaegashi

    发明人： Toshitake Yaegashi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/513 ,  G11C16/0466 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11543

    摘要： A nonvolatile semiconductor memory according to examples of the present invention comprises a memory cell and a peripheral transistor. The memory cell has a first intergate insulating film having a multilayer structure and provided on a floating gate electrode and an isolation insulating layer. The peripheral transistor has a second intergate insulating film having a multilayer structure and provided on a first gate electrode and a second isolation insulating layer. The first and second intergate insulating films have the same structure, and a lowermost insulating layer of the first intergate insulating film on the first isolation insulating layer is thinner than a lowermost insulating layer of the second intergate insulating film on the second isolation insulating layer.

    摘要翻译： 根据本发明实施例的非易失性半导体存储器包括存储单元和外围晶体管。 存储单元具有具有多层结构并设置在浮栅电极和隔离绝缘层上的第一隔间绝缘膜。 外围晶体管具有第二栅极间绝缘膜，具有多层结构并且设置在第一栅电极和第二隔离绝缘层上。 第一和第二隔间绝缘膜具有相同的结构，并且第一隔离绝缘层上的第一隔间绝缘膜的最下层绝缘层比第二隔离绝缘层上的第二隔间绝缘膜的最下层绝缘层薄。