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    Method of making field emitters using porous silicon
    82.
    发明申请
    Method of making field emitters using porous silicon 失效
    使用多孔硅制造场致发射体的方法

    公开(公告)号：US20020137242A1

    公开(公告)日：2002-09-26

    申请号：US10156284

    申请日：2002-05-28

    Inventor： Terry L. Gilton

    IPC: H01L021/00

    CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2209/0226

    Abstract: A process is provided for forming sharp asperities useful as field emitters. The process comprises patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy and the resulting oxide is removed.

    Abstract translation: 提供了用于形成用作场致发射体的尖锐凹凸的工艺。 该工艺包括图案化和掺杂硅衬底。 掺杂硅衬底被阳极氧化。 然后将阳极氧化区域用于场发射尖端。 本发明的方法也可用于通过其它方法制造的尖端的低温磨削。 尖端被阳极氧化，然后暴露于辐射能，并且所得到的氧化物被去除。

    Electron emitters and method for forming them
    83.
    发明申请
    Electron emitters and method for forming them 失效
    电子发射体及其形成方法

    公开(公告)号：US20020093281A1

    公开(公告)日：2002-07-18

    申请号：US09759746

    申请日：2001-01-12

    Inventor： David A. Cathey

    IPC: H01J001/16 ,  H01J019/10

    CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

    Abstract: Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

    Abstract translation: 电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点，朝向发射体的基底减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

    Method of forming wire line
    86.
    发明授权
    Method of forming wire line 有权
    形成布线的方法

    公开(公告)号：US06194308B1

    公开(公告)日：2001-02-27

    申请号：US09421165

    申请日：1999-10-19

    Applicant: Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

    Inventor： Everett A. McTeer ,  Russell C. Zahorik ,  Scott G. Meikle

    IPC: H01L310232

    CPC classification number: H01L21/76849 ,  H01J1/52 ,  H01J29/896 ,  H01J31/127 ,  H01J2201/30403 ,  H01J2201/319 ,  H01L21/0276 ,  H01L21/32139 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76885 ,  H01L23/53223 ,  H01L31/02161 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Titanium aluminum nitrogen (“Ti—Al—N”) is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti—Al—N layer serves as a cap layer which prevents unwanted reflection of photolithography light (i.e., photons) during fabrication. For field emission display devices (FEDs), the Ti—Al—N layer prevents light originating at the display screen anode from penetrating transistor junctions that would hinder device operation. For the wiring line embodiment, an aluminum conductive layer and a titanium-aluminum underlayer are formed beneath the antireflective cap layer. The Ti—Al underlayer reduces the shrinkage which occurs in the aluminum conductive layer during heat treatment.

    Abstract translation: 将钛铝氮（“Ti-Al-N”）沉积到半导体衬底区域上以用作抗反射涂层。 对于布线生产工艺，Ti-Al-N层用作遮盖层，防止在制造过程中光刻光（即光子）的不期望的反射。 对于场致发射显示装置（FED），Ti-Al-N层防止在显示屏阳极处产生的光穿透将阻碍器件工作的晶体管结。 对于布线实施例，在抗反射盖层下方形成铝导电层和钛 - 铝底层。 Ti-Al底层减少了在热处理期间在铝导电层中发生的收缩。

    Method of making field emitters using porous silicon
    87.
    发明授权
    Method of making field emitters using porous silicon 失效
    使用多孔硅制造场致发射体的方法

    公开(公告)号：US06187604B1

    公开(公告)日：2001-02-13

    申请号：US08864496

    申请日：1997-05-28

    Applicant: Terry L. Gilton

    Inventor： Terry L. Gilton

    IPC: H01L200

    CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2209/0226

    Abstract: A process is provided for forming sharp asperities, useful as field emitters. The process comprises: patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy, and the resulting oxide is removed.

    Abstract translation: 提供了用于形成尖锐凹凸的工艺，可用作场致发射体。 该方法包括：图案化和掺杂硅衬底。 掺杂硅衬底被阳极氧化。 然后将阳极氧化区域用于场发射尖端。 本发明的方法也可用于通过其它方法制造的尖端的低温磨削。 将尖端进行阳极氧化，然后暴露于辐射能，并将所得氧化物除去。

    Method of forming an array of emmitter tips
    88.
    发明授权
    Method of forming an array of emmitter tips 失效
    形成发射器尖端阵列的方法

    公开(公告)号：US6126845A

    公开(公告)日：2000-10-03

    申请号：US354923

    申请日：1999-07-15

    Applicant: David A. Cathey ,  Kevin Tjaden

    Inventor： David A. Cathey ,  Kevin Tjaden

    IPC: H01J9/02 ,  B44C1/22 ,  H01J9/00

    CPC classification number: H01J9/025 ,  H01J2201/30403

    Abstract: A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.

    Abstract translation: 一种制造尖锐凹凸的方法。 提供了具有设置在其上的掩模层的基板，并且在该掩模层的上方布置一层微球。 微球用于图案化掩模层。 选择性地去除掩模层的一部分，从而形成圆形掩模。 基板被各向同性地蚀刻，从而产生尖锐的凹凸。

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