公开(公告)号：US06246069B1

公开(公告)日：2001-06-12

申请号：US09062735

申请日：1998-04-20

Applicant: David S. Hsu ,  Henry F. Gray

Inventor： David S. Hsu ,  Henry F. Gray

IPC: H01L2906

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Abstract translation: 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底，突起限定至少一个侧壁，侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上，发射极层选自半导体和导体，并且是包括延伸超出第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上，该对支撑层各自选自由半导体和导体组成的组，并且每个具有比发射极层更高的功函数。

公开(公告)号：US6114802A

公开(公告)日：2000-09-05

申请号：US808382

申请日：1997-02-28

Applicant: Craig Amrine ,  Kenneth Dean ,  Curtis D. Moyer

Inventor： Craig Amrine ,  Kenneth Dean ,  Curtis D. Moyer

IPC: H01J3/02 ,  H01J29/02 ,  H01J19/24 ,  H01J29/04

CPC classification number: H01J3/022 ,  H01J29/028 ,  H01J2201/30423 ,  H01J2329/8615

Abstract: A field emission device (400) includes a plastically-deformable, ceramic, stamped substrate (200) made from a plastically deformable ceramic, which in the preferred embodiment includes a calendered tape. The plastically-deformable, ceramic, stamped substrate (200) includes first and second opposed surfaces (202, 204) and defines apertures (206) in which are formed extraction electrodes (410). The field emission device (400) further includes an electron-emissive layer (418) being formed on the first opposed surface (202). Cathodes (420) are disposed on the electron-emissive layer (418) and cross the extraction electrodes (410) at an angle of 90.degree.. A method for fabricating said field emission device (400) includes stamping a layer (100) of the softened calendered tape with a die (300) to define the apertures (206) and grooves (208, 212, 214).

Abstract translation: 场致发射器件（400）包括由可塑性变形的陶瓷制成的可塑性变形的陶瓷冲压衬底（200），在优选实施例中，其包括压延带。 塑性可变形的陶瓷冲压衬底（200）包括第一和第二相对表面（202,204）并且限定孔（206），其中形成有引出电极（410）。 场发射器件（400）还包括形成在第一相对表面（202）上的电子发射层（418）。 阴极（420）设置在电子发射层（418）上，并以90°的角度与提取电极（410）交叉。 制造所述场发射装置（400）的方法包括用模具（300）冲压软化的压延带的层（100）以限定孔（206）和凹槽（208,212,214）。

公开(公告)号：US5811929A

公开(公告)日：1998-09-22

申请号：US458137

申请日：1995-06-02

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J3/02 ,  H01J1/62 ,  H01J1/02 ,  H01J1/16 ,  H01J63/04

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode structure (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having one or more control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode (140) is positioned in a plane above or below the emitter edge or tip (110) and automatically aligned to that edge. The simplified devices are specially adapted for use in arrays, including field emission display arrays.

Abstract translation: 场致发射器件（10）由基本上平行于衬底（20）的侧向发射器（100）和简化的阳极结构（70）制成。 横向发射极场致发射器件具有薄膜发射极阴极（100），其厚度不超过几百埃，并且具有小的曲率半径的发射叶片边缘或尖端（110）。 当施加适当的偏置电压时，阳极的顶表面与侧向发射器的平面精确地间隔开并且在侧向发射极的平面之下并且接收从侧向发射极阴极的叶片边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极（140）的二极管或三极管，四极管等，以便通过施加到控制电极的电信号来控制从发射极到阳极的电流。 在特别简单的实施例中，单个控制电极（140）被定位在发射器边缘或尖端（110）的上方或下方的平面中，并自动对准该边缘。 简化的器件特别适用于阵列，包括场发射显示阵列。

公开(公告)号：US5700176A

公开(公告)日：1997-12-23

申请号：US735042

申请日：1996-10-22

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce lateral-emitter field-emission devices and their arrays. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110). A fabrication process for forming an evacuated or gas-filled sealed chamber in a substrate is disclosed.

Abstract translation: 使用与半导体集成电路制造类似的工艺步骤（S1-S18）来公开制造横向射极场致发射器件及其阵列的制造工艺。 在简化阳极器件的优选制造工艺中，执行以下步骤：沉积阳极膜（70）; 绝缘膜（90）沉积在阳极膜上; 在绝缘体上沉积超薄导电发射极膜（100）并图案化; 通过发射极和绝缘体蚀刻沟槽开口（160），停止在阳极膜处，从而形成并自动对准发射极的发射边缘; 并且提供用于将电偏压施加到发射极和阳极的装置，足以引起电子从发射极的发射边到阳极的场发射。 阳极膜可以包括用于特别适用于场致发射显示器的器件的荧光体（75）。 制造工艺还可以包括沉积额外的绝缘膜（130）并且沉积用于控制电极（140）的附加导电膜的步骤，所述导电膜自动地与发射器叶片边缘或尖端（110）对齐。 公开了一种用于在衬底中形成抽真空或充气密封腔的制造工艺。

公开(公告)号：US5629580A

公开(公告)日：1997-05-13

申请号：US331307

申请日：1994-10-28

Applicant: Jack A. Mandelman ,  Michael D. Potter

Inventor： Jack A. Mandelman ,  Michael D. Potter

IPC: H01J3/02 ,  H01J1/16

CPC classification number: H01J3/022 ,  H01J2201/30423

Abstract: Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.

Abstract translation: 阐述了用于显示元件和制造方法的侧面场致发射器件（“FED”）。 FED包括平行于并设置在基板上方的薄膜发射极。 FED还包括具有第一侧表面的柱状阳极。 磷光体层邻近第一侧面设置。 具体地，阳极被定向成使得侧表面和相邻磷光体层垂直于衬底。 发射器具有一个尖端，该尖端的距离小于空气中的电子与荧光体层的平均自由距离。 在工作上，当在所述阳极和所述发射极之间施加电压电位时，电子从发射极的尖端发射到荧光体层中，从而使荧光层发射电磁能。 阐述了场致发射装置，制造方法，操作方法和相关显示器的进一步具体细节。

公开(公告)号：US5587628A

公开(公告)日：1996-12-24

申请号：US426357

申请日：1995-04-21

Applicant: Huei-Pei Kuo

Inventor： Huei-Pei Kuo

IPC: H01J31/12 ,  H01J3/02 ,  H01J29/04 ,  G09G3/00

CPC classification number: H01J3/022 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A field emission device including a substrate, an emitter layer, a spacer layer and a gate layer. In one preferred embodiment, the emitter layer is made of a resistive material, and has a side end that has an edge. The spacer layer is on and over only a portion of the emitter layer to expose the edge. The gate layer, on the spacer layer, also has a side end that is tapered to form a wedge with an edge. In one application, the device is used in a flat panel display, with a screen. The screen is at a selected positive voltage and is positioned above the gate layer. When a selected potential difference is applied between the emitter layer and the gate layer, an electron-extraction field is established between the edge of the gate layer and the edge of the emitter layer to extract electrons from the edge of the emitter layer. Then, the electrons are attracted to the screen. The wedge reduces the amount of electrons collected at the gate and increases the efficiency of the device. The resistive nature of the emitter layer enhances the uniformity of the electrons emitted along the edge of the emitter layer.

Abstract translation: 一种场发射器件，包括衬底，发射极层，间隔层和栅极层。 在一个优选实施例中，发射极层由电阻材料制成，并具有具有边缘的侧端。 间隔层仅在发射极层的一部分上并暴露出边缘。 间隔层上的栅极层也具有锥形的侧端，以形成具有边缘的楔形物。 在一个应用中，该设备用于具有屏幕的平板显示器中。 屏幕处于选定的正电压并且位于栅极层上方。 当在发射极层和栅极层之间施加选择的电位差时，在栅极层的边缘和发射极层的边缘之间建立电子提取场，以从发射极层的边缘提取电子。 然后，电子被吸引到屏幕上。 楔形物减少了在栅极处收集的电子的量，并提高了器件的效率。 发射极层的电阻性质增强沿发射极层边缘发射的电子的均匀性。

公开(公告)号：US5584740A

公开(公告)日：1996-12-17

申请号：US321642

申请日：1994-10-11

Applicant: David S. Y. Hsu ,  Henry F. Gray

Inventor： David S. Y. Hsu ,  Henry F. Gray

IPC: H01J1/304 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30423 ,  H01J2201/319

Abstract: A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

Abstract translation: 薄膜边缘场发射器装置包括具有第一部分并且具有从第一部分延伸的突起的基底，突起限定至少一个侧壁，侧壁构成第二部分。 发射极层设置在包括第二部分的衬底上，发射极层选自半导体和导体，并且是包括延伸超过第二部分并限定暴露的发射极边缘的部分的薄膜。 一对支撑层设置在发射极层的相对侧上，该对支撑层各自选自由半导体和导体组成的组，并且每个具有比发射极层更高的功函数。