公开(公告)号：US5657189A

公开(公告)日：1997-08-12

申请号：US503609

申请日：1995-07-18

Applicant: Adarsh Sandhu

Inventor： Adarsh Sandhu

IPC: G01R33/07 ,  G01R33/06 ,  G11B5/37 ,  H01L21/338 ,  H01L29/06 ,  H01L29/778 ,  H01L29/812 ,  H01L43/06 ,  H01L43/14 ,  H01L29/82

CPC classification number: G11B5/376 ,  G01R33/06 ,  H01L43/065

Abstract: A thin film magnetic head includes a layered semiconductor body formed of a quantum well layer sandwiched by first and second barrier layers, wherein at least one of the first and second barrier layers includes therein a delta-doped layer that shields the quantum well layer from a surface depletion region extending from the surface of the barrier layer.

Abstract translation: 薄膜磁头包括由第一和第二阻挡层夹在中间的量子阱层形成的分层半导体本体，其中第一和第二阻挡层中的至少一个包括其中的量子阱层与 表面耗尽区从阻挡层的表面延伸。

公开(公告)号：US5614754A

公开(公告)日：1997-03-25

申请号：US508990

申请日：1995-07-28

Applicant: Kazuhiko Inoue

Inventor： Kazuhiko Inoue

IPC: G01R33/07 ,  H01L43/06 ,  H01L29/82

CPC classification number: H01L43/065

Abstract: A Hall device consists of a single-crystal semiconductor substrate of (110) orientation, an active region formed on the substrate, a pair of input current terminals for passing a predetermined current through the active region, and a pair of output voltage terminals for measuring a potential difference to be produced in a direction orthogonal to the predetermined current flowing between the input current terminals. The surface of the active region is in a (110) plane, to minimize a fluctuation in the offset output of the device due to internal stress and precisely measure a magnetic field. This device is resistive against heat caused by soldering when mounting the device on a system.

Abstract translation: 霍尔器件由（110）取向的单晶半导体衬底，形成在衬底上的有源区，用于使预定电流通过有源区的一对输入电流端和用于测量的一对输出电压端 在与输入电流端子之间流动的预定电流正交的方向上产生的电位差。 有源区域的表面在（110）平面中，以便由于内部应力而使装置的偏移输出的波动最小化并且精确地测量磁场。 当将设备安装在系统上时，该设备可抵抗由焊接引起的热量。

公开(公告)号：US5442221A

公开(公告)日：1995-08-15

申请号：US065003

申请日：1993-05-24

Applicant: Vincent Mosser ,  Jean-Louis Robert

Inventor： Vincent Mosser ,  Jean-Louis Robert

IPC: H01L43/06 ,  H01L27/22 ,  H01L43/00

CPC classification number: H01L43/065

Abstract: A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of thickness less than 250 .ANG. and having an density per unit area of donors integrated over the whole thickness of the carrier injection layer less than 5.times.10.sup.12 cm.sup.-2, an insulating burial layer deposited on the carrier injection layer, having a conduction band with an energy level greater than the Fermi energy of the sensor and a thickness greater than 200 .ANG.. Applicable to the field of electricity meters and current sensors.

Abstract translation: 一种二维电子气体型霍尔效应传感器，包括在绝缘衬底上的量子阱结构，与量子阱结构相邻的载流子注入层，厚度小于250，并且具有供体的单位面积密度 在载流子注入层的整个厚度小于5×10 12 cm -2的情况下，沉积在载流子注入层上的绝缘埋藏层具有能量水平大于传感器的费米能量的导带，并且厚度大于200A 。 适用于电表和电流传感器领域。

公开(公告)号：US5289410A

公开(公告)日：1994-02-22

申请号：US905666

申请日：1992-06-29

Applicant: Romney R. Katti ,  Henry L. Stadler ,  Jiin-Chuan Wu

Inventor： Romney R. Katti ,  Henry L. Stadler ,  Jiin-Chuan Wu

IPC: G11C11/14 ,  G11C11/18 ,  H01L43/06

CPC classification number: G11C11/14 ,  G11C11/18 ,  H01L43/065

Abstract: Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

Abstract translation: 在非易失性磁性随机存取存储器中进行了改进。 这种存储器包括单元阵列阵列，每个单元阵列具有霍尔效应传感器和由具有面内，单轴各向异性和面内双极残余磁化状态的材料制成的薄膜磁性元件。 通过使用GaAs / AlGaAs / InAlAs超晶格缓冲层，通过在硅衬底上使用1μm厚的分子束外延生长InAs层，使霍尔效应传感器变得更加敏感。 一个改进可以避免矩阵结构的当前分流问题。 另一个改进降低了微型磁铁所需的磁化电流。 另一个改进涉及使用GaAs技术，其中高电子迁移率GaAs MESFET提供更快的切换时间。 另一个改进涉及将本发明配置为三维随机存取存储器的方法。

公开(公告)号：US4987467A

公开(公告)日：1991-01-22

申请号：US252781

申请日：1988-09-30

Applicant: Radivoje Popovic

Inventor： Radivoje Popovic

IPC: G01R15/20 ,  G01R21/08 ,  H01L29/82 ,  H01L43/06

CPC classification number: H01L43/065 ,  G01R15/202 ,  G01R21/08 ,  H01L2924/0002

Abstract: In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement consists in the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.

公开(公告)号：US4912451A

公开(公告)日：1990-03-27

申请号：US291649

申请日：1988-12-29

Applicant: Yoshinobu Sugiyama ,  Munecazu Tacano ,  Hajime Soga

Inventor： Yoshinobu Sugiyama ,  Munecazu Tacano ,  Hajime Soga

IPC: H01L43/06

CPC classification number: H01L43/065

Abstract: The heterojunction magnetic field sensor is basically a heterojunction structure forming a two-dimensional electron gas layer having a high carrier mobility at the junction portion of at least two different kinds of semiconductor layers having a different band gap, respectively, and further, at least one semiconductor layer having a quantum well structure is provided adjacent to and in contact with the two dimensional electron gas layer, the energy level of the ground state subband thereof being higher than that of the two-dimensional electron gas layer. This heterojunction magnetic field sensor has a high sensitivity which is not saturated even under a high electric field and provides an enhanced output even under the high electric field.

Abstract translation: 异质结磁场传感器基本上是异相结构，其分别在具有不同带隙的至少两种不同种类的半导体层的接合部分分别形成具有高载流子迁移率的二维电子气体层，此外，至少一个 提供与二维电子气层相邻并与之接触的具有量子阱结构的半导体层，其基态子带的能级高于二维电子气层的能级。 该异质结磁场传感器具有高灵敏度，即使在高电场下也不饱和，甚至在高电场下也能提供增强的输出。

公开(公告)号：US4875011A

公开(公告)日：1989-10-17

申请号：US21671

申请日：1987-03-04

Applicant: Masayuki Namiki ,  Masanori Gouda ,  Masaaki Kamiya

Inventor： Masayuki Namiki ,  Masanori Gouda ,  Masaaki Kamiya

IPC: H01L43/06

CPC classification number: H01L43/065

Abstract: Two Hall effect devices are formed on a major surface of a silicon single crystal substrate lying in parallel to the (100) crystalline plane and series-connected to form a magnetic sensor. Each of the Hall effect devices has a pair of drive electrodes spaced apart from each other in a direction substantially parallel to the or crystalline axis and held at different potentials for flowing therebetween a drive current in said direction to drive the Hall effect device and a pair of Hall terminals for developing a Hall voltage when exposed to an external magnetic field. A comparator compares the potentials of two selected Hall terminals of the different Hall devices with each other to produce a compared signal. A switching element is connected to one of the Hall devices to control the potential of the Hall terminals to equalize the potentials of the two selected Hall terminals in response to the compared signal. Two non-selected Hall terminals develop positive and negative Hall voltages, respectively, relative to the selected Hall terminals so that the magnetic sensor produces a totalized Hall voltage of the two Hall effect devices.

Abstract translation: 两个霍尔效应器件形成在平行于（100）晶体平面并且串联连接的硅单晶衬底的主表面上以形成磁传感器。 每个霍尔效应装置具有一对驱动电极，该驱动电极在基本上平行于<100>或<010>晶轴的方向上彼此间隔开并且保持在不同的电位以在其间流动在所述方向上的驱动电流以驱动 霍尔效应器件和一对霍尔端子，用于在暴露于外部磁场时产生霍尔电压。 比较器将不同霍尔器件的两个选定的霍尔端子的电位彼此进行比较，以产生比较的信号。 开关元件连接到霍尔器件中的一个，以响应于所比较的信号来控制霍尔端子的电位来均衡两个所选霍尔端子的电位。 两个未选择的霍尔端子相对于所选择的霍尔端子分别产生正和负霍尔电压，使得磁传感器产生两个霍尔效应器件的累加霍尔电压。

公开(公告)号：US4829352A

公开(公告)日：1989-05-09

申请号：US40854

申请日：1987-04-21

Applicant: Radivoje Popovic ,  Axel Krause

Inventor： Radivoje Popovic ,  Axel Krause

IPC: H01L27/22 ,  H01L43/06

CPC classification number: H01L27/22 ,  G01R33/066 ,  H01L43/065

Abstract: An inventive Hall element formed from semiconductor material is disclosed. The inventive Hall element comprises a plurality of interconnected portions formed in a common semiconductor layer. Depending on how the portions are interconnected, the Hall element may detect the sum or difference of magnetic field values. The invention enables the realization of very large Hall elements which can be used in electrical meters to measure a magnetic field produced by an electric current.

Abstract translation: 公开了一种由半导体材料形成的本发明的霍尔元件。 本发明的霍尔元件包括形成在公共半导体层中的多个互连部分。 根据这些部分如何互连，霍尔元件可以检测磁场值的和或差。 本发明能够实现可用于电表中的非常大的霍尔元件，以测量由电流产生的磁场。

公开(公告)号：US4700211A

公开(公告)日：1987-10-13

申请号：US514881

申请日：1983-07-18

Applicant: Radivoje Popovic ,  Heinrich P. Baltes

Inventor： Radivoje Popovic ,  Heinrich P. Baltes

IPC: G01R33/06 ,  H01L43/06 ,  H01L27/22 ,  G01R33/02 ,  H01L29/72 ,  H01L43/00

CPC classification number: H01L43/065 ,  G01R33/06 ,  G01R33/066

Abstract: A magnetic field sensor having a lateral bipolar magnetotransistor incorporating only a single emitter region and whose base region is incorporated as a well in the surface of a silicon substrate of the reverse material conduction type. The P/N junction of the base region with the silicon substrate is reverse biased by means of at least one secondary collector contact. The emitter region must be kept as shallow than 0.5 .mu.m or be so lowly doped with impurity atoms that its resistivity is greater than 100 ohms per square or both. The sensitivity of the magnetic field sensor is approximately 100%/Tesla.

Abstract translation: 磁场传感器具有仅具有单个发射极区域并且其基极区域以良好的方式结合在反向材料传导型硅衬底的表面中的横向双极型磁电晶体管。 基底区域与硅衬底的P / N结通过至少一个次级集电极触点反向偏置。 发射极区域必须保持在0.5μm以下，或者掺入杂质原子，使其电阻率大于100欧姆/平方或两者。 磁场传感器的灵敏度约为100％/特斯拉。

公开(公告)号：US4488164A

公开(公告)日：1984-12-11

申请号：US387227

申请日：1982-06-10

Applicant: Rudolf F. Kazarinov ,  Sergey Luryi

Inventor： Rudolf F. Kazarinov ,  Sergey Luryi

IPC: H01L29/82 ,  H01L39/06 ,  H01L43/06 ,  H01L27/22 ,  H01L25/04 ,  H01L45/00

CPC classification number: H01L39/18 ,  H01L29/82 ,  H01L43/065 ,  Y10S505/86

Abstract: A switching element (e.g., 30) is furnished by an inversion layer (e.g., 55) in a zero resistance state under the influence of a quantizing magnetic field, the inversion layer having a ring geometry. Voltage (e.g., V.sub.o) applied across a pair of localized spaced apart terminals (e.g., 37, 38)--one on a portion of the inner edge of the ring, the other on the outer edge--produces a percolating current in the inversion layer, that is, a current circulating around the ring in a zero resistance state. This percolating current suddenly vanishes when a control voltage is applied to an auxiliary (gate) electrode (e.g., 51), whereby an output voltage (e.g., V.sub.out) previously developed across another pair of localized spaced apart terminals (e.g., 47, 48) on either edge of the ring suddenly also vanishes.

Abstract translation: 在量化磁场的影响下，通过反电阻（例如55）在零电阻状态下提供开关元件（例如30），该反转层具有环形几何形状。 施加在一对局部间隔开的端子（例如，37,38）上的电压（例如，Vo） - 在环的内边缘的一部分上，另一个在外边缘上，在反转层中产生渗透电流 即在零电阻状态下在环周围循环的电流。 当控制电压施加到辅助（栅极）电极（例如51）时，渗透电流突然消失，由此先前在另一对局部间隔开的端子（例如，47,48）上形成的输出电压（例如，Vout） 在环的任一边突然也消失。