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    Method for manufacturing a superconducting device having an extremely thin superconducting channel
    82.
    发明授权
    Method for manufacturing a superconducting device having an extremely thin superconducting channel 失效
    具有极薄超导通道的超导装置的制造方法

    公开(公告)号：US5510324A

    公开(公告)日：1996-04-23

    申请号：US353396

    申请日：1994-12-02

    申请人： Takao Nakamura ,  Michitomo Iiyama ,  Hiroshi Inada

    发明人： Takao Nakamura ,  Michitomo Iiyama ,  Hiroshi Inada

    IPC分类号： H01L39/14 ,  H01L39/24 ,  H01L39/22

    CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/702

    摘要： The invention relates to a method of manufacturing a superconducting device, which comprises the steps of forming on a principal surface of a substrate a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide superconductor thin film and a flat-top projection at its center portion, forming a c-axis oriented oxide superconductor thin film having an extremely thin thickness on the non-superconducting oxide layer so as to form a superconducting channel on the projecting portion of the non-superconducting oxide layer, forming an insulating layer on the c-axis oriented oxide superconductor thin film so as to form a gate insulating layer on the superconducting channel, and forming an a-axis oriented oxide superconductor thin film so as to form a superconducting source region and a superconducting drain region of which upper surfaces have the same level as that of the superconducting channel. The projecting portion of the non-superconducting oxide layer is preferably formed by a lift-off process using a lift-off layer formed of a CaO layer covered with a Zr layer which is removed by utilizing water and the following reaction:CaO+H.sub.2 O.fwdarw.Ca(OH).sub.2.

    摘要翻译： 本发明涉及一种制造超导器件的方法，其包括以下步骤：在基片的主表面上形成具有与c轴取向的氧化物超导体薄膜相似的晶体结构的非超导氧化物层，以及 在其中心部分形成平顶部突起，在非超导氧化物层上形成厚度非常薄的c轴取向氧化物超导体薄膜，以在非超导氧化物层的突出部分上形成超导通道， 在c轴取向氧化物超导体薄膜上形成绝缘层，以在超导通道上形成栅极绝缘层，并形成a轴取向的氧化物超导体薄膜，以形成超导源极区和超导漏极 其上表面具有与超导通道相同的水平面。 非超导氧化物层的突出部分优选通过使用由覆盖有Zr层的CaO层形成的剥离层的剥离工艺形成，该层由通过利用水除去的Zr层和以下反应：CaO + H 2 O- > Ca（OH）2。

    Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
    83.
    发明授权
    Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material 失效
    用于制造具有由氧化物超导体材料形成的极薄超导通道的超导装置的方法

    公开(公告)号：US5509183A

    公开(公告)日：1996-04-23

    申请号：US439784

    申请日：1995-05-12

    申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

    发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

    IPC分类号： H01L39/14 ,  H01B12/00

    CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/703 ,  Y10T29/41

    摘要： A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, an extremely thin superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor. The non-superconducting oxide layers contact with at least the superconducting source region and the superconducting drain region. In the superconducting device, the superconducting channel, the superconducting source region and the superconducting drain region are formed of one oxide superconductor thin film of which the center portion is c-axis oriented and the both ends are a-axis oriented.

    摘要翻译： 一种超导装置，包括具有主表面的衬底，超导源极区和由衬底的主表面上的氧化物超导体形成的超导漏极区，由超导体之间的氧化物超导体形成的极薄的超导通道 源极区和超导漏极区。 超导通道将超导源极区域电连接到超导漏极区域，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道。 超导装置包括通过超导通道上的栅极绝缘体的栅极电极，用于控制流过超导通道的超导电流，以及具有与氧化物超导体相似的晶体结构的非超导氧化物层。 非超导氧化物层与至少超导源极区域和超导漏极区域接触。 在超导装置中，超导通道，超导源极区域和超导漏极区域由一个氧化物超导体薄膜形成，其中心部分为c轴取向并且两端为a轴取向。

    Superconducting microwave parts having a package, two substrates, and line and grounding conductors
    85.
    发明授权
    Superconducting microwave parts having a package, two substrates, and line and grounding conductors 失效
    超导微波部件具有封装，两个基板以及线和接地导体

    公开(公告)号：US5496797A

    公开(公告)日：1996-03-05

    申请号：US353344

    申请日：1994-12-05

    申请人： Kenjiro Higaki ,  Hideo Itozaki

    发明人： Kenjiro Higaki ,  Hideo Itozaki

    IPC分类号： H01L39/22 ,  H01L39/14 ,  H01P3/08 ,  H01P7/08 ,  H01P11/00 ,  H01B12/06

    CPC分类号： H01P7/082 ,  H01L39/143 ,  H01P7/084 ,  Y10S505/70 ,  Y10S505/701 ,  Y10S505/866

    摘要： There is disclosed a superconducting microwave component including a first substrate having a conductor line formed of an oxide superconductor on the surface thereof, a second substrate having a grounding conductor formed of an oxide superconductor on the surface thereof, and a package of a conducting material housing the first and the second substrates so that they are substantially parallel with each other. At least one portion of the grounding conductor is in contact with the inside of the package, through surface contact.

    摘要翻译： 公开了一种超导微波部件，其包括：第一基板，具有在其表面上由氧化物超导体形成的导体线;第二基板，具有由其表面上的氧化物超导体形成的接地导体;以及封装导电材料壳体 第一和第二基板，使得它们基本上彼此平行。 接地导体的至少一部分通过表面接触与封装的内部接触。

    Superconducting field effect device with vertical channel formed of oxide superconductor material
    87.
    发明授权
    Superconducting field effect device with vertical channel formed of oxide superconductor material 失效
    超导场效应器件，由氧化物超导体材料形成

    公开(公告)号：US5462918A

    公开(公告)日：1995-10-31

    申请号：US249478

    申请日：1994-05-26

    申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

    发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

    IPC分类号： H01L39/14 ,  H01B12/00 ,  B05D5/12 ,  H01L39/22

    CPC分类号： H01L39/146

    摘要： A superconducting device has a stacked structure including a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in this given order. The stacked structure has an end surface portion extending from the first insulating layer to the second insulating layer. A fourth superconducting layer is formed to cover the end surface of the stacked structure. A third insulating layer separates the stacked structure end surface and the fourth superconducting layer. The fourth superconducting layer is electrically connected to the first and third superconducting layers but is isolated from the second superconducting layer by the third insulating layer. The first through fourth superconducting layers are formed of an oxide superconductor thin film. A silicon containing layer is formed adjacent to at least one of the first, third and fourth superconducting layers, but is not in direct contact with the other superconducting layers.

    摘要翻译： 超导装置具有堆叠结构，该层叠结构包括以给定顺序堆叠在基板上的第一超导层，第一绝缘层，第二超导层，第二绝缘层和第三超导层。 堆叠结构具有从第一绝缘层延伸到第二绝缘层的端面部分。 形成第四超导层以覆盖堆叠结构的端面。 第三绝缘层分离堆叠的结构端面和第四超导层。 第四超导层电连接到第一和第三超导层，但是通过第三绝缘层与第二超导层隔离。 第一至第四超导层由氧化物超导体薄膜形成。 形成与第一，第三和第四超导层中的至少一个相邻的含硅层，但不与其它超导层直接接触。

    Superconducting device having a reduced thickness of oxide superconducting layer
    88.
    发明授权
    Superconducting device having a reduced thickness of oxide superconducting layer 失效
    具有减小厚度的氧化物超导层的超导装置

    公开(公告)号：US5446015A

    公开(公告)日：1995-08-29

    申请号：US194631

    申请日：1994-02-10

    申请人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

    发明人： Takao Nakamura ,  Hiroshi Inada ,  Michitomo Iiyama

    IPC分类号： H01L39/14 ,  H01L39/00

    CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/728

    摘要： For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode are formed on the first and second oxide superconducting regions. The superconducting device thus formed can function as a super-FET.

    摘要翻译： 为了制造超导装置，在衬底的主表面上形成具有非常薄的厚度的第一氧化物超导体薄膜，并且在第一氧化物超导薄层的一部分上形成栅极绝缘体和栅电极的叠层结构 电影。 使用栅电极作为掩模，在第一氧化物超导体薄膜的暴露表面上生长第二氧化物超导体薄膜，使得在栅电极的相对侧形成具有较厚厚度的第一和第二超导区域， 与栅电极电隔离。 源电极和漏极形成在第一和第二氧化物超导区上。 如此形成的超导器件可以用作超级FET。

    Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
    89.
    发明授权
    Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material 失效
    具有由氧化物超导体材料形成的极薄超导通道的超导装置

    公开(公告)号：US5408108A

    公开(公告)日：1995-04-18

    申请号：US990841

    申请日：1992-12-14

    申请人： Takao Nakamura ,  Michitomo Iiyama ,  Hiroshi Inada

    发明人： Takao Nakamura ,  Michitomo Iiyama ,  Hiroshi Inada

    IPC分类号： H01L39/14 ,  H01B12/00 ,  B05D5/12 ,  H01L39/22

    CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/702

    摘要： A superconducting device comprises a substrate having a principal surface and a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, which has a projection at its center portion. A superconducting source region and a superconducting drain region formed of an .alpha.-axis oriented oxide superconductor thin film are positioned at the both sides of the projection of the non-superconducting oxide layer separated from each other and an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film is positioned on the projection of the non-superconducting oxide layer. The superconducting channel electrically connects the superconducting source region to the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. This superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel. In the superconducting device the upper surfaces of the superconducting source region and the superconducting drain region have the same level as that of the superconducting channel.

    摘要翻译： 超导装置包括具有主表面的基板和具有与氧化物超导体相似的晶体结构的非超导氧化物层，其在其中心部分具有突起。 由α轴取向的氧化物超导体薄膜形成的超导源极区域和超导漏极区域位于彼此分离的非超导氧化物层的突起的两侧以及由c形成的极薄的超导通道 轴向氧化物超导体薄膜位于非超导氧化物层的投影上。 超导通道将超导源极区域电连接到超导漏极区域，使得超导电流可以流过超导源极区域和超导漏极区域之间的超导通道。 该超导装置还包括通过超导通道上的栅极绝缘体的栅电极，用于控制流过超导通道的超导电流。 在超导装置中，超导源极区域和超导漏极区域的上表面具有与超导通道相同的电平。

    Field-effect device with a superconducting channel
    90.
    发明授权
    Field-effect device with a superconducting channel 失效
    具超导通道的场效应装置

    公开(公告)号：US5401714A

    公开(公告)日：1995-03-28

    申请号：US238184

    申请日：1994-05-04

    申请人： Preveen Chaudhari ,  Carl A. Mueller ,  Hans P. Wolf

    发明人： Preveen Chaudhari ,  Carl A. Mueller ,  Hans P. Wolf

    IPC分类号： H01L39/22 ,  H01L39/14 ,  H01L39/00

    CPC分类号： H01L39/146 ,  Y10S505/701 ,  Y10S505/78 ,  Y10S505/873

    摘要： A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.sup.21 /cm.sup.3 and a correlation length of about 0.2 nm. The channel thickness is preferrable in the order of 1 nm. The superconductor is preferably a single crystalline and oriented such that the superconducting behavior is strongest in the plane parallel to the substrate. With a signal of a few volts applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between a "zero resistance" (undepleted, superconducting) state and "very high resistance" (depleted state).

    摘要翻译： 场效应结构形成在衬底上并且包括具有源极和漏极的沟道以及通过绝缘层与沟道分离的栅极。 通道由高Tc金属氧化物超导体（例如YBaCuO）制成，其载流子密度约为1021 / cm3，相关长度约为0.2nm。 通道厚度优选为1nm左右。 超导体优选为单晶并且取向为使得在平行于衬底的平面中超导行为最强。 利用施加到栅极的几伏的信号，整个沟道横截面耗尽电荷载流子，从而可以在“零电阻”（未剥离，超导）状态和“非常高电阻”（耗尽）之间切换沟道电阻 州）。