利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

271 条记录 (耗时 0.013 秒)

    Laser photochemical synthesis of Si.sub.3 N.sub.4
    81.
    发明授权
    Laser photochemical synthesis of Si.sub.3 N.sub.4 失效
    激光光化学合成Si3N4

    公开(公告)号：US4270997A

    公开(公告)日：1981-06-02

    申请号：US137887

    申请日：1980-04-07

    申请人： James A. Merritt

    发明人： James A. Merritt

    IPC分类号： C01B21/068 ,  C03C25/22 ,  C03C25/42 ,  B01J19/12

    CPC分类号： C03C25/42 ,  C01B21/068 ,  C03C25/22

    摘要： Disclosed is a method to synthesize Si.sub.3 N.sub.4 from SiX.sub.4 +NX.s3, wherein X is selected from hydrogen and/or fluorine, by laser photochemical reaction (LPR) technique in a controlled atmosphere chamber wherein the reactant gases are maintained at pressures between about 10 and about 200 torr in a molar volume ratio of about 3 of the SiX.sub.4 to about 4 of the NX.sub.3. The LPR method produces the compound Si.sub.3 N.sub.4 at room temperature while employing a pulsed laser or a continuous wave laser.

    摘要翻译： 公开了一种通过激光光化学反应（LPR）技术在受控气氛室中从SiX4 + NX3合成Si 3 N 4的方法，其中X选自氢和/或氟，其中反应物气体保持在约10至约200 torr以摩尔体积比约为3的SiX4至约4的NX3。 LPR方法在室温下使用脉冲激光或连续波激光产生化合物Si 3 N 4。

    Procedures for coating substrates with silicon carbide
    84.
    发明授权
    Procedures for coating substrates with silicon carbide 失效
    用碳化硅涂覆基板的步骤

    公开(公告)号：US3850689A

    公开(公告)日：1974-11-26

    申请号：US2655670

    申请日：1970-04-08

    申请人： UNITED AIRCRAFT CORP

    发明人： BASCHE M ,  FANTI R

    IPC分类号： C03C25/42 ,  C23C16/32 ,  B32B15/02 ,  B44D1/42 ,  C03C25/02

    CPC分类号： C03C25/42 ,  C01P2004/10 ,  C23C16/325 ,  Y10T428/294

    摘要： Thin, adherent oxidation and corrosion resistant silicon carbide coatings are provided on filamentary base materials by continuously passing a hot surface of the filamentary material through a liquid organo silicon halide, wherein the temperature of the hot surface is high enough to cause the organo silicon halide immediately surrounding the hot surface to film boil, decompose, and deposit the silicon carbide coating. The filamentary base material has a melting point which exceeds the formation temperature of silicon carbide. The base material may be tungsten, tantalum, columbium, or alloys thereof. The base material may also be glass or alumina. When the base material is glass, the glass filaments may be coated directly after forming. All of the substrates may be preheated to the required temperature and the substrates which are electrically conductive may be heated by electrical resistance heating.

    摘要翻译： 通过将丝状材料的热表面连续通过液体有机硅卤化物，在丝状基材上提供薄的，粘附的氧化和耐腐蚀碳化硅涂层，其中热表面的温度足够高以立即引起有机硅卤化物 围绕热表面进行薄膜沸腾，分解和沉积碳化硅涂层。 丝状基材的熔点超过碳化硅的形成温度。 基材可以是钨，钽，铌或其合金。 基材也可以是玻璃或氧化铝。 当基材为玻璃时，可以在成型后直接涂布玻璃丝。 所有的基板可以被预热到所需的温度，并且可以通过电阻加热来加热导电的基板。